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1. 发明授权

US08491987B2 Selectively coated self-aligned mask 有权
标题翻译：选择性涂层自对准面膜
公开(公告)号：US08491987B2
公开(公告)日：2013-07-23
申请号：US12164647
申请日：2008-06-30
申请人： Matthew E Colburn , Stephen M Gates , Jeffrey C Hedrick , Elbert Huang , Satyanarayana V Nitta , Sampath Purushothaman , Muthumanickam Sankarapandian
发明人： Matthew E Colburn , Stephen M Gates , Jeffrey C Hedrick , Elbert Huang , Satyanarayana V Nitta , Sampath Purushothaman , Muthumanickam Sankarapandian
IPC分类号： H01L23/58 , C08L53/00
CPC分类号： H05K3/0079 , H01L21/0331 , H01L21/76849 , H05K3/282 , H05K2203/1173 , Y10T428/24802
摘要： A method for forming a self aligned pattern on an existing pattern on a substrate comprising applying a coating of a solution containing a masking material in a carrier, the masking material having an affinity for portions of the existing pattern; and allowing at least a portion of the masking material to preferentially assemble to the portions of the existing pattern. The pattern may be comprised of a first set of regions of the substrate having a first atomic composition and a second set of regions of the substrate having a second atomic composition different from the first composition. The first set of regions may include one or more metal elements and the second set of regions may include a dielectric. The first and second regions may be treated to have different surface properties. Structures made in accordance with the method. Compositions useful for practicing the method.
摘要翻译：一种用于在衬底上的现有图案上形成自对准图案的方法，包括在载体中涂覆含有掩蔽材料的溶液的涂层，所述掩模材料对现有图案的部分具有亲和力; 并且允许掩模材料的至少一部分优先组装到现有图案的部分。该图案可以由具有第一原子组成的衬底的第一组区域和第二组衬底的区域组成，其具有不同于第一组成的第二原子组成。第一组区域可以包括一个或多个金属元件，并且第二组区域可以包括电介质。可以将第一和第二区域处理成具有不同的表面性质。按照该方法制造的结构。用于练习该方法的组合物。

2. 发明授权

US07948051B2 Nonlithographic method to produce self-aligned mask, articles produced by same and compositions for same 有权
标题翻译：用于制备自对准掩模的非光刻方法，由相同制备的制品和用于其的组合物
公开(公告)号：US07948051B2
公开(公告)日：2011-05-24
申请号：US12164599
申请日：2008-06-30
申请人： Matthew E Colburn , Stephen M Gates , Jeffrey C Hedrick , Elbert Huang , Satyanarayana V Nitta , Sampath Purushothaman , Muthumanickam Sankarapandian
发明人： Matthew E Colburn , Stephen M Gates , Jeffrey C Hedrick , Elbert Huang , Satyanarayana V Nitta , Sampath Purushothaman , Muthumanickam Sankarapandian
IPC分类号： H01L21/70
CPC分类号： H05K3/0079 , H01L21/0331 , H01L21/76849 , H05K3/282 , H05K2203/1173 , Y10T428/24802
摘要： A method for forming a self aligned pattern on an existing pattern on a substrate comprising applying a coating of a solution containing a masking material in a carrier, the masking material having an affinity for portions of the existing pattern; and allowing at least a portion of the masking material to preferentially assemble to the portions of the existing pattern. The pattern may be comprised of a first set of regions of the substrate having a first atomic composition and a second set of regions of the substrate having a second atomic composition different from the first composition. The first set of regions may include one or more metal elements and the second set of regions may include a dielectric. The first and second regions may be treated to have different surface properties. Structures made in accordance with the method. Compositions useful for practicing the method.
摘要翻译：一种用于在衬底上的现有图案上形成自对准图案的方法，包括在载体中涂覆含有掩蔽材料的溶液的涂层，所述掩模材料对现有图案的部分具有亲和力; 并且允许掩模材料的至少一部分优先组装到现有图案的部分。该图案可以由具有第一原子组成的衬底的第一组区域和第二组衬底的区域组成，其具有不同于第一组成的第二原子组成。第一组区域可以包括一个或多个金属元件，并且第二组区域可以包括电介质。可以将第一和第二区域处理成具有不同的表面性质。按照该方法制造的结构。用于练习该方法的组合物。

3. 发明授权

US06641899B1 Nonlithographic method to produce masks by selective reaction, articles produced, and composition for same 有权
公开(公告)号：US06641899B1
公开(公告)日：2003-11-04
申请号：US10287935
申请日：2002-11-05
申请人： Matthew E Colburn , Stephen M Gates , Jeffrey C Hedrick , Elbert Huang , Satyanarayana V Nitta , Sampath Purushothaman , Muthumanickam Sankarapandian
发明人： Matthew E Colburn , Stephen M Gates , Jeffrey C Hedrick , Elbert Huang , Satyanarayana V Nitta , Sampath Purushothaman , Muthumanickam Sankarapandian
IPC分类号： B32B300
CPC分类号： H01L21/76849 , B82Y30/00 , G03F7/165 , H01L21/0331 , H01L21/31058 , H05K3/0079 , Y10T428/24802 , Y10T428/24917 , Y10T428/24926
摘要： A method for forming a self aligned pattern on an existing pattern on a substrate comprising applying a coating of the masking material to the substrate; and allowing at least a portion of the masking material to preferentially attach to portions of the existing pattern. The pattern is comprised of a first set of regions of the substrate having a first atomic composition and a second set of regions of the substrate having a second atomic composition different from the first composition. The first set of regions may include one or more metal elements and the second set of regions may include a dielectric. The masking material may comprise a polymer containing a reactive grafting site that selectively binds to the portions of the pattern. The masking material may include a polymer that binds to the portions of the pattern to provide a layer of functional groups suitable for polymerization initiation, a reactive molecule having functional groups suitable for polymerization propagation, or a reactive molecule, wherein reaction of the reactive molecule with the portion of the pattern generates a layer having reactive groups, which participate in step growth polymerization. Structures in accordance with the method. Compositions for practicing the method.

4. 发明授权

US07485341B2 Nonlithographic method to produce masks by selective reaction, articles produced, and composition for same 失效
标题翻译：通过选择性反应制备掩模的非光刻方法，制备的制品和用于其的组合物
公开(公告)号：US07485341B2
公开(公告)日：2009-02-03
申请号：US10421306
申请日：2003-04-23
申请人： Matthew E Colburn , Stephen M Gates , Jeffrey C Hedrick , Elbert Huang , Satyanarayana V Nitta , Sampath Purushothaman , Muthumanickam Sankarapandian
发明人： Matthew E Colburn , Stephen M Gates , Jeffrey C Hedrick , Elbert Huang , Satyanarayana V Nitta , Sampath Purushothaman , Muthumanickam Sankarapandian
IPC分类号： B05D1/32
CPC分类号： H01L21/76849 , B82Y30/00 , G03F7/165 , H01L21/0331 , H01L21/31058 , H05K3/0079 , Y10T428/24802 , Y10T428/24917 , Y10T428/24926
摘要： A method for forming a self aligned pattern on an existing pattern on a substrate comprising applying a coating of the masking material to the substrate; and allowing at least a portion of the masking material to preferentially attach to portions of the existing pattern. The pattern is comprised of a first set of regions of the substrate having a first atomic composition and a second set of regions of the substrate having a second atomic composition different from the first composition. The first set of regions may include one or more metal elements and the second set of regions may include a dielectric. The masking material may comprise a polymer containing a reactive grafting site that selectively binds to the portions of the pattern. The masking material may include a polymer that binds to the portions of the pattern to provide a layer of functional groups suitable for polymerization initiation, a reactive molecule having functional groups suitable for polymerization propagation, or a reactive molecule, wherein reaction of the reactive molecule with the portion of the pattern generates a layer having reactive groups, which participate in step growth polymerization. Structures in accordance with the method. Compositions for practicing the method.
摘要翻译：一种用于在衬底上的现有图案上形成自对准图案的方法，包括将掩模材料的涂层施加到衬底上; 并且允许掩模材料的至少一部分优先地附着到现有图案的部分上。该图案由具有第一原子组成的基底的第一组区域和具有不同于第一组成的第二原子组成的基底的第二组区域组成。第一组区域可以包括一个或多个金属元件，并且第二组区域可以包括电介质。掩模材料可以包含含有选择性结合图案部分的反应性接枝位点的聚合物。掩蔽材料可以包括聚合物，其结合图案的部分以提供适于聚合起始的官能团层，具有适用于聚合扩展的官能团的反应性分子或反应性分子，其中反应性分子与图案的部分产生具有反应性基团的层，其参与步骤生长聚合。结构按照方法。组合练习方法。

5. 发明授权

US06911400B2 Nonlithographic method to produce self-aligned mask, articles produced by same and compositions for same 失效
公开(公告)号：US06911400B2
公开(公告)日：2005-06-28
申请号：US10287905
申请日：2002-11-05
申请人： Matthew E Colburn , Stephen M Gates , Jeffrey C Hedrick , Elbert Huang , Satyanarayana V Nitta , Sampath Purushothaman , Muthumanickam Sankarapandian
发明人： Matthew E Colburn , Stephen M Gates , Jeffrey C Hedrick , Elbert Huang , Satyanarayana V Nitta , Sampath Purushothaman , Muthumanickam Sankarapandian
IPC分类号： H01L21/027 , B32B3/00 , G03F7/00 , G03F7/16 , G03F7/26 , H01L21/31 , H01L21/3105 , H01L21/469
CPC分类号： H05K3/0079 , H01L21/0331 , H01L21/76849 , H05K3/282 , H05K2203/1173 , Y10T428/24802
摘要： A method for forming a self aligned pattern on an existing pattern on a substrate comprising applying a coating of a solution containing a masking material in a carrier, the masking material having an affinity for portions of the existing pattern; and allowing at least a portion of the masking material to preferentially assemble to the portions of the existing pattern. The pattern may be comprised of a first set of regions of the substrate having a first atomic composition and a second set of regions of the substrate having a second atomic composition different from the first composition. The first set of regions may include one or more metal elements and the second set of regions may include a dielectric. The first and second regions may be treated to have different surface properties. Structures made in accordance with the method. Compositions useful for practicing the method.

6. 发明授权

US07030495B2 Method for fabricating a self-aligned nanocolumnar airbridge and structure produced thereby 有权
公开(公告)号：US07030495B2
公开(公告)日：2006-04-18
申请号：US10804553
申请日：2004-03-19
申请人： Matthew E Colburn , Satyanarayana V Nitta , Sampath Purushothaman
发明人： Matthew E Colburn , Satyanarayana V Nitta , Sampath Purushothaman
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/7682 , H01L23/5222 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A method for fabricating a low k, ultra-low k, and extreme-low k multilayer interconnect structure on a substrate in which the interconnect line features are separated laterally by a dielectric with vertically oriented nano-scale voids formed by perforating it using sub-optical lithography patterning and etching techniques and closing off the tops of the perforations by a dielectric deposition step. The lines are supported either by solid or patterned dielectric features underneath. The method avoids the issues associated with the formation of air gaps after the fabrication of conductor patterns and those associated with the integration of conventional low k, ultra-low k and extreme low k dielectrics which have porosity present before the formation of the interconnect patterns.

7. 发明授权

US07517637B2 Method of producing self-aligned mask in conjunction with blocking mask, articles produced by same and composition for same 失效
标题翻译：生产自对准面罩的方法与阻隔面罩相同，制成的物品及其成分相同
公开(公告)号：US07517637B2
公开(公告)日：2009-04-14
申请号：US10804552
申请日：2004-03-19
申请人： Matthew E Colburn , Satyanarayana V Nitta , Sampath Purushothaman
发明人： Matthew E Colburn , Satyanarayana V Nitta , Sampath Purushothaman
IPC分类号： G03F7/00
CPC分类号： G03F7/2022
摘要： A method of forming a self aligned pattern on an existing pattern on a substrate including applying a coating of a solution containing a masking material in a carrier, the masking material being either photo or thermally sensitive; performing a blanket exposure of the substrate; and allowing at least a portion of the masking material to preferentially develop in a fashion that replicates the existing pattern of the substrate. The existing pattern includes a first set of regions of the substrate having a first reflectivity and a second set of regions of the substrate having a second reflectivity different from the first composition. The first set of regions can include one or more metal elements and the second set of regions can include one or more dielectrics. Structures made in accordance with the method. A low resolution mask is used to block out regions over the substrate. Additionally, the resist can be applied over another masking layer that contains a separate pattern.
摘要翻译：一种在衬底上的现有图案上形成自对准图案的方法，包括在载体中涂覆含有掩模材料的溶液的涂层，所述掩模材料为光敏或热敏感的; 进行基板的覆盖曝光; 并且允许至少一部分掩模材料以复制衬底的现有图案的方式优先显影。现有图案包括具有第一反射率的衬底的第一组区域和具有不同于第一组成的第二反射率的衬底的第二组区域。第一组区域可以包括一个或多个金属元素，第二组区域可以包括一个或多个电介质。按照该方法制造的结构。低分辨率掩模用于阻挡衬底上的区域。另外，抗蚀剂可以施加在包含单独图案的另一掩蔽层上。

8. 发明授权

US07037744B2 Method for fabricating a self-aligned nanocolumnar airbridge and structure produced thereby 失效
标题翻译：制造自对准纳米柱状空中桥梁的方法及由此制造的结构
公开(公告)号：US07037744B2
公开(公告)日：2006-05-02
申请号：US11150059
申请日：2005-06-10
申请人： Matthew E Colburn , Satyanarayana V Nitta , Sampath Purushothaman
发明人： Matthew E Colburn , Satyanarayana V Nitta , Sampath Purushothaman
IPC分类号： H01L21/00
CPC分类号： H01L21/7682 , H01L23/5222 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A method for fabricating a low k, ultra-low k, and extreme-low k multilayer interconnect structure on a substrate in which the interconnect line features are separated laterally by a dielectric with vertically oriented nano-scale voids formed by perforating it using sub-optical lithography patterning and etching techniques and closing off the tops of the perforations by a dielectric deposition step. The lines are supported either by solid or patterned dielectric features underneath. The method avoids the issues associated with the formation of air gaps after the fabrication of conductor patterns and those associated with the integration of conventional low k, ultra-low k and extreme low k dielectrics which have porosity present before the formation of the interconnect patterns.
摘要翻译：一种用于在衬底上制造低k，超低k和极低k多层互连结构的方法，其中互连线特征由具有垂直取向的纳米级空隙的电介质侧向分开，光刻图案和蚀刻技术，并通过介电沉积步骤封闭穿孔的顶部。线路由固体或图案化的电介质特征支撑。该方法避免了在形成导体图案之后与形成气隙相关的问题，以及与形成互连图案之前具有孔隙率的常规低k，超低k和极低k电介质的集成相关联的问题。

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