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1. 发明公开

EP1291954A2 RF device and communication apparatus using the same 有权
标题翻译：射频装置及使用该装置的通讯装置
公开(公告)号：EP1291954A2
公开(公告)日：2003-03-12
申请号：EP02019050.0
申请日：2002-08-27
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Yamakawa, Takehiko , Yamada, Toru , Ishizaki, Toshio
IPC分类号： H01P1/15 , H01P1/203 , H01P1/213
CPC分类号： H01P1/20345 , H01P1/15 , H01P1/213
摘要： An RF device, has a first substrate made of a material with a lower relative dielectric constant and having a high frequency circuit formed therein or on a surface thereof; and
a second substrate made of a material with a higher relative dielectric constant,
wherein at least a part of a filter is provided in, on a surface of or in the vicinity of the second substrate and connected to the high frequency circuit, and
the high frequency circuit is composed of an element other than the part of the filter.
摘要翻译：一种RF器件，具有第一基板和第二基板，所述第一基板由具有较低相对介电常数的材料制成并且具有在其中或在其表面上形成的高频电路; 以及由具有较高相对介电常数的材料制成的第二基板，其中滤波器的至少一部分设置在第二基板的表面上或其附近并连接到高频电路，并且高高频电路由滤波器部分以外的元件构成。

2. 发明授权

EP1291954B1 RF device and communication apparatus using the same 有权
标题翻译：射频设备和相关联的通信设备
公开(公告)号：EP1291954B1
公开(公告)日：2006-04-12
申请号：EP02019050.0
申请日：2002-08-27
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Yamakawa, Takehiko , Yamada, Toru , Ishizaki, Toshio
IPC分类号： H01P1/15 , H01P1/203 , H01P1/213
CPC分类号： H01P1/20345 , H01P1/15 , H01P1/213

3. 发明公开

EP1533897A2 Filter using piezoelectric resonator 审中-公开
标题翻译：过滤器mit piezoelektrischem谐振器
公开(公告)号：EP1533897A2
公开(公告)日：2005-05-25
申请号：EP04026155.4
申请日：2004-11-04
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Yamakawa, Takehiko , Yamaguchi, Hiroshi , Nakatsuka, Hiroshi , Nakamura, Hiroyuki , Onishi, Keiji , Ishizaki, Toshio
IPC分类号： H03H9/64 , H03H9/58
CPC分类号： H03H9/605 , H03H9/6433
摘要： A series piezoelectric resonator (11) is connected in series between an input terminal (15a) and an output terminal (15b). A first electrode of a first parallel piezoelectric resonator (12a) is connected to a connection point between the input terminal (15a) and the series piezoelectric resonator (11), and a second electrode of the first parallel piezoelectric resonator (12a) is connected to a first terminal of a first inductor (13a). A first electrode of a a second parallel piezoelectric resonator (12b) is connected to a connection point between the series piezoelectric resonator (11) and the output terminal (15b), and a second electrode of the second parallel piezoelectric resonator (12b) is connected to a first terminal of a second inductor (13b). Second terminals of the inductors (13a,13b) are grounded. An additional piezoelectric resonator (14) is connected between the second electrode of the first parallel piezoelectric resonator (12a) and the second electrode of the second parallel piezoelectric resonator (12b).
摘要翻译：串联压电谐振器（11）串联连接在输入端子（15a）和输出端子（15b）之间。第一并联压电谐振器（12a）的第一电极连接到输入端子（15a）和串联压电谐振器（11）之间的连接点，第一并联压电谐振器（12a）的第二电极连接到第一电感器（13a）的第一端子。第二并联压电谐振器（12b）的第一电极连接到串联压电谐振器（11）和输出端子（15b）之间的连接点，并且第二并联压电谐振器（12b）的第二电极连接到第二电感器（13b）的第一端子。电感器（13a，13b）的第二端接地。附加的压电谐振器（14）连接在第一并联压电谐振器（12a）的第二电极和第二并联压电谐振器（12b）的第二电极之间。

4. 发明公开

EP1071156A3 In-band-flat-group-delay type dielectric filter and linearized amplifier using the same 审中-公开
标题翻译： Dielektrisches过滤器mit acher acher acher it it it it it it it it it it it it it it it it it it
公开(公告)号：EP1071156A3
公开(公告)日：2003-01-29
申请号：EP00306195.9
申请日：2000-07-20
申请人： Matsushita Electric Industrial Co., Ltd.
发明人： Yamakawa, Takehiko , Yamada, Toru , Ishizaki, Toshio , Tachibana, Minoru , Nakamura, Toshiaki , Nakamatsu, Hiroyuki
IPC分类号： H01P1/205
CPC分类号： H01P1/2053
摘要： A small in-band-flat-group-delay type dielectric filter having low-loss characteristics with a small amplitude deviation and uniform-group-delay frequency characteristics is obtained, which enables broad-band characteristics to be obtained easily. The in-band-flat-group-delay type dielectric filter includes a plurality of dielectric coaxial resonators 14, 15, a coupling circuit comprising a combination of reactive elements, with which the dielectric coaxial resonators 14, 15 are coupled to one another, and input/output terminals 11 connected to ends of the coupling circuit. The dielectric coaxial resonators 14 coupled to the input/output terminals 11 are allowed to have a different characteristic impedance from that of the interstage dielectric coaxial resonators 15.
摘要翻译：获得具有小振幅偏差和均匀群延迟频率特性的低损耗特性的小带内平面延迟型介质滤波器，这使得能够容易地获得宽带特性。带内平坦组延迟型介质滤波器包括多个电介质同轴谐振器14,15，包括电抗元件的组合的耦合电路，电介质同轴谐振器14,15与其相互耦合，以及连接到耦合电路端部的输入/输出端子11。耦合到输入/输出端子11的电介质同轴谐振器14被允许具有与级间介质同轴谐振器15不同的特性阻抗。

5. 发明公开

EP1530292A2 Piezoelectric resonator, method of manufacturing piezoelectric resonator, and filter, duplexer, and communication device using piezolectric resonator 审中-公开
标题翻译：使用的压电谐振器是Herstellungsvefahren，以及滤波器，双工器和通信装置，所述压电谐振器
公开(公告)号：EP1530292A2
公开(公告)日：2005-05-11
申请号：EP04026163.8
申请日：2004-11-04
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Nakatsuka, Hiroshi , Onishi, Keiji , Nakamura, Hiroyuki , Yamakawa, Takehiko , Yamaguchi, Hiroshi
IPC分类号： H03H9/56
CPC分类号： H03H3/04 , H03H9/0211 , H03H9/173 , Y10T29/42
摘要： A piezoeletric resonator includes: a substrate (105); a lower electrode (103) formed on or above the substrate; a piezoeletric body (101) formed on or above the lower electrode; an upper electrode (102) formed on or above the piezoeletric body; and a cavity (104) under a vibrating portion formed by the lower electrode, the piezoeletric body, and the upper electrode. Where a resonant frequency of vibration with a thickness of the vibrating portion being a half of a wavelength is taken as fr, an average of ultrasonic velocity in a material forming the cavity is taken as Vc, and a value determined based on the resonant frequency fr and the average of ultrasonic velocity Vc is taken as λc (=Vc/fr), a depth of the cavity is set so as to be equal to or larger than n×λc/2-λc/8 and equal to or smaller than n×λc/2+λc/8.
摘要翻译：甲piezoeletric谐振器包括：基板（105）; 形成在所述基体上的下部电极（103）; 一个piezoeletric体（101）上形成的或在下部电极的上方; 到上或piezoeletric成形体上述上部电极（102）; 并且由下部电极，所述piezoeletric体，和上部电极而形成的振动部下方的空腔（104）。其中振动的厚度振动部是一个波长的一半的谐振频率被取为FR，平均声速在形成腔的材料设为Vc和确定性的值矿洞基于谐振频率fr 和超声波速度Vc的平均值作为拉姆达C（= VC / FR），空腔的深度被设定为比为nx拉姆达C / 2的λC / 8等于或大于和等于或小于比为nx拉姆达C / 2 +拉姆达C /第八

6. 发明公开

EP1530290A2 Piezoelectric device, antenna duplexer, and method of manufacturing piezolelectric resonators used therefor 审中-公开
标题翻译：压电谐振器的压电装置，天线双工器及其制造方法
公开(公告)号：EP1530290A2
公开(公告)日：2005-05-11
申请号：EP04026165.3
申请日：2004-11-04
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Nakamura, Hiroyuki , Onishi, Keiji , Nakatsuka, Hiroshi , Yamaguchi, Hiroshi , Yamakawa, Takehiko
IPC分类号： H03H3/02 , H03H9/58
CPC分类号： H03H9/605 , H03H3/02 , H03H9/02118 , H03H9/587
摘要： A piezoelectric device (100) includes first and second piezoeletric resonators (110, 120). The first piezoeletric resonator (110) has a structure in which a cavity (111), a lower electrode (112), apiezoeletric layer (113), and an upper electrode (114) are formed on a substrate (101). The second piezoeletric resonator (120) has a structure in which a cavity (121), a lower electrode (122), a piezoeletric layer (123), and an upper electrode (124) are formed on the substrate (101). A feature of the above-structure piezoelectric device (100) is that the piezoeletric layers (113, 123) have the same film thickness and the depth (t1) of the cavity (111) of the first piezoeletric resonator (110) is different from the depth (t2) of the cavity (121) of the second piezoeletric resonator (120).
摘要翻译：压电装置（100）包括第一和第二谐振器piezoeletric（110，120）。所述第一谐振器piezoeletric（110）具有在其中的腔体（111），在上电极（114）的下部电极（112）apiezoeletric层（113），和底物上的（101）形成的结构。所述第二谐振器piezoeletric（120）具有在其中的腔体（121），下部电极（122），一个piezoeletric层（123），并且在上部电极（124）在基板（101）形成的结构。上述结构的压电装置（100）的特征是DASS死piezoeletric层（113，123）具有相同的膜厚度和所述第一piezoeletric谐振器（110）的腔（111）的深度（T1）是从不同的所述第二谐振器piezoeletric（120）的腔（121）的深度（T2）。

7. 发明公开

EP1372211A3 Dielectric filter, communication apparatus, and method of controlling resonance frequency 审中-公开
标题翻译：的介质滤波器中，通信设备和方法，用于控制所述谐振频率
公开(公告)号：EP1372211A3
公开(公告)日：2004-01-07
申请号：EP03012831.8
申请日：2003-06-05
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Yamakawa, Takehiko , Ishizaki, Toshio , Tachibana, Minoru
IPC分类号： H01P1/208
CPC分类号： H01P1/2084
摘要： The invention provides a dielectric filter including a metal case having an opening in the upper part, a metal lid of closing the opening, a dielectric resonance element placed on the internal bottom face of the case through a support, a bolt made of dielectric material inserted in a position in the lid corresponding to the dielectric resonance element, and a metal plate placed at the end of the bolt substantially in parallel with the upper face of the dielectric resonance element, wherein the position of the bolt is adjusted to change the space between the dielectric resonance element and the plate, whereby the resonance frequency is controlled.

8. 发明公开

EP1291954A3 RF device and communication apparatus using the same 有权
标题翻译：射频设备和相关联的通信设备
公开(公告)号：EP1291954A3
公开(公告)日：2003-11-19
申请号：EP02019050.0
申请日：2002-08-27
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Yamakawa, Takehiko , Yamada, Toru , Ishizaki, Toshio
IPC分类号： H01P1/15 , H01P1/203 , H01P1/213
CPC分类号： H01P1/20345 , H01P1/15 , H01P1/213
摘要： An RF device, has a first substrate made of a material with a lower relative dielectric constant and having a high frequency circuit formed therein or on a surface thereof; and a second substrate made of a material with a higher relative dielectric constant, wherein at least a part of a filter is provided in, on a surface of or in the vicinity of the second substrate and connected to the high frequency circuit, and the high frequency circuit is composed of an element other than the part of the filter.

9. 发明公开

EP1223591A2 Multilayer electronic component and communication apparatus 审中-公开
标题翻译： Vielschichtelektronikbauteil undKommunikationsgerät
公开(公告)号：EP1223591A2
公开(公告)日：2002-07-17
申请号：EP02000463.6
申请日：2002-01-08
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Yamakawa, Takehiko , Ishizaki, Toshio , Yamada, Toru , Kitazawa, Shoichi , Iwasaki, Tomoyuki
IPC分类号： H01G4/30
CPC分类号： H03H7/175 , H01F17/0013 , H01F27/362 , H01F2017/0026 , H01G4/40 , H03H7/1758 , H03H7/1766 , H03H7/1791 , H03H7/463 , H03H2001/0085
摘要： A multilayer electronic component has a multilayered product laminating a plurality of dielectric sheets as one piece,
a plurality of grounded electrodes provided among the dielectric sheets being different inside the multilayered product, and
inductor electrodes provided on the dielectric sheet surfaces not having the plurality of grounded electrodes inside the multilayered product,
wherein all or part of the inductor electrodes are placed so as not to be sandwiched by the plurality of grounded electrodes.
摘要翻译：多层电子部件具有将多个电介质层叠成一体的多层产品，其中在多层产品内的电介质片之间设置的多个接地电极和电感器电极设置在不具有在多层产品内的多个接地电极的电介质片表面上，其中全部或部分电感器电极被放置成不被多个接地电极夹在中间。

10. 发明公开

EP1517444A3 Piezoelectric resonator, filter, and duplexer 有权
标题翻译：压电谐振器，滤波器和双工器
公开(公告)号：EP1517444A3
公开(公告)日：2005-08-31
申请号：EP04021697.0
申请日：2004-09-13
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Nakatsuka, Hiroshi , Onishi, Keiji , Nakamura, Hiroyuki , Yamakawa, Takehiko
IPC分类号： H03H9/17
CPC分类号： H03H9/588 , H03H9/02094 , H03H9/02102 , H03H9/0211 , H03H9/173 , H03H9/174 , H03H9/175 , H03H9/585 , H03H9/589
摘要： A piezoelectric resonator of the present invention is structured such that on a substrate (5) having a cavity (4) formed therein, a lower electrode (3), a piezoelectric body (1), a spurious component control layer (16) , and an upper electrode (2) are formed in this order frombottomup. The spurious component control layer (16) is a layer for controlling a spurious frequency, and composed of, for example, a metallic material, a dielectric material, or a piezoelectric material. By additionally providing the spurious component control layer (16), it is made possible to cause variation of the spurious frequency due to unwanted variation to become greater than variation in resonance frequency of the main resonance of the piezoelectric resonator. Thus, it is possible to realize a piezoelectric resonator having an admittance frequency response where no spurious component occurs between resonance frequency fr and antiresonance frequency fa.
摘要翻译：本发明的压电谐振器是这样构成的，即在其中形成有空腔（4）的衬底（5）上形成下电极（3），压电体（1），寄生成分控制层（16）和从下方起依次形成上部电极（2）。寄生成分控制层（16）是用于控制寄生频率的层，并且由例如金属材料，电介质材料或压电材料构成。通过附加地提供寄生成分控制层（16），可以使由不希望的变化引起的寄生频率的变化变得大于压电谐振器的主谐振的谐振频率的变化。因此，可以实现具有导纳频率响应的压电谐振器，其中谐振频率fr和反谐振频率fa之间不产生寄生分量。

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