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    • 3. 发明申请
    • Low Wetting Hysteresis Polysiloxane-Based Material and Method for Depositing Same
    • 低润湿滞后聚硅氧烷基材料及其沉积方法
    • US20090081384A1
    • 2009-03-26
    • US11922421
    • 2006-06-27
    • Marc PlissonnierMathias BorellaFrederic GaillardPascal Faucherand
    • Marc PlissonnierMathias BorellaFrederic GaillardPascal Faucherand
    • B05D5/00C08G77/04
    • B05D1/62B05D5/08C09D4/00C08G77/04
    • A polysiloxane-based material presents a predetermined structure or conformation such that the polysiloxane-based material comprises a ratio between a number of linear —Si—O— bonds and a number of cyclic —Si—O— bonds less than or equal to 0.4, and preferably less than or equal to 0.3. Such a polysiloxane-based material enables a wetting hysteresis less than 10°, and preferably less than 5° to be obtained. Such a low wetting hysteresis material can be achieved by chemical vapor deposition enhanced by a plasma wherein a precursor is injected. The precursor is selected from the group consisting of cyclic organosiloxanes such as octamethylcyclotetrasiloxane and derivatives thereof and cyclic organosilazanes such as octamethylcyclosilazane and derivatives thereof. A ratio between a power density dissipated in the plasma and a precursor flow rate injected in the plasma is less than or equal to 100 W.cm−2/mol.min−1.
    • 基于聚硅氧烷的材料具有预定的结构或构象,使得基于聚硅氧烷的材料包含多个直链-Si-O-键与小于或等于0.4的环状-Si-O-键的数量之间的比例, 优选小于或等于0.3。 这种基于聚硅氧烷的材料能够获得小于10°,优选小于5°的润湿滞后。 这种低润湿滞后材料可以通过其中注入前体的等离子体增强的化学气相沉积来实现。 前体选自环状有机硅氧烷如八甲基环四硅氧烷及其衍生物,环状有机硅氮烷如八甲基环四硅烷及其衍生物。 在等离子体中耗散的功率密度与在等离子体中注入的前体流速之间的比率小于或等于100W·cm-2 / mol·min -1。
    • 5. 发明申请
    • Method for producing a nanostructure based on interconnected nanowires, nanostructure and use as thermoelectric converter
    • 基于互连的纳米线,纳米结构和用作热电转换器的纳米结构的制造方法
    • US20080142066A1
    • 2008-06-19
    • US11826293
    • 2007-07-13
    • Marc PlissonnierFrederic GaillardRaphael SalotJean-Antoine Gruss
    • Marc PlissonnierFrederic GaillardRaphael SalotJean-Antoine Gruss
    • H01L21/44H01L35/00
    • H01L35/34H01L35/32Y10S977/89Y10T428/2971
    • Method for producing a nanostructure based on interconnected nanowires, nanostructure and use as thermoelectric converter The nanostructure comprises two arrays of nanowires made from respectively n-doped and p-doped semi-conducting material. The nanowires of the first array, for example of n type, are formed for example by VLS growth. A droplet of electrically conducting material that acted as catalyst during the growth step remains on the tip of each nanowire of the first array at the end of growth. A nanowire of the second array is then formed around each nanowire of the first array by covering a layer of electrically insulating material formed around each nanowire of the first array, and the associated droplet, with a layer of p-type semi-conducting material. A droplet thus automatically connects a nanowire of the first array with a single coaxial nanowire of the second array. This type of nanostructure can be used in particular to form a thermoelectric converter.
    • 用于制备基于互连纳米线,纳米结构并用作热电转换器的纳米结构的方法纳米结构包括由分别掺杂n型掺杂和p掺杂半导体材料制成的两个纳米线阵列。 第一阵列的纳米线,例如n型,例如通过VLS生长形成。 在生长步骤中用作催化剂的导电材料液滴在生长结束时保留在第一阵列的每个纳米线的尖端上。 然后通过用一层p型半导体材料覆盖形成在第一阵列的每个纳米线周围的电绝缘材料层和相关联的液滴,形成在第一阵列的每个纳米线周围的第二阵列的纳米线。 因此,液滴自动地将第一阵列的纳米线与第二阵列的单个同轴纳米线连接。 这种类型的纳米结构可以特别用于形成热电转换器。
    • 6. 发明授权
    • Method for producing a nanostructure based on interconnected nanowires, nanostructure and use as thermoelectric converter
    • 基于互连的纳米线,纳米结构和用作热电转换器的纳米结构的制造方法
    • US07868243B2
    • 2011-01-11
    • US11826293
    • 2007-07-13
    • Marc PlissonnierFrederic GaillardRaphael SalotJean-Antoine Gruss
    • Marc PlissonnierFrederic GaillardRaphael SalotJean-Antoine Gruss
    • H01L35/00H01L21/44
    • H01L35/34H01L35/32Y10S977/89Y10T428/2971
    • Method for producing a nanostructure based on interconnected nanowires, nanostructure and use as thermoelectric converter The nanostructure comprises two arrays of nanowires made from respectively n-doped and p-doped semi-conducting material. The nanowires of the first array, for example of n type, are formed for example by VLS growth. A droplet of electrically conducting material that acted as catalyst during the growth step remains on the tip of each nanowire of the first array at the end of growth. A nanowire of the second array is then formed around each nanowire of the first array by covering a layer of electrically insulating material formed around each nanowire of the first array, and the associated droplet, with a layer of p-type semi-conducting material. A droplet thus automatically connects a nanowire of the first array with a single coaxial nanowire of the second array. This type of nanostructure can be used in particular to form a thermoelectric converter.
    • 用于制备基于互连纳米线,纳米结构并用作热电转换器的纳米结构的方法纳米结构包括由分别掺杂n型掺杂和p掺杂半导体材料制成的两个纳米线阵列。 第一阵列的纳米线,例如n型,例如通过VLS生长形成。 在生长步骤中用作催化剂的导电材料液滴在生长结束时保留在第一阵列的每个纳米线的尖端上。 然后通过用一层p型半导体材料覆盖形成在第一阵列的每个纳米线周围的电绝缘材料层和相关联的液滴,形成在第一阵列的每个纳米线周围的第二阵列的纳米线。 因此,液滴自动地将第一阵列的纳米线与第二阵列的单个同轴纳米线连接。 这种类型的纳米结构可以特别用于形成热电转换器。