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1. 发明申请

US20080239586A1 Current perpendicular to plane magneto-resistance effect element, magnetic head, and magnetic recording/reproducing device 失效
标题翻译：电流垂直于平面磁阻效应元件，磁头和磁记录/再现装置
公开(公告)号：US20080239586A1
公开(公告)日：2008-10-02
申请号：US12076438
申请日：2008-03-18
申请人： Masayuki Takagishi , Hitoshi Iwasaki , Masahiro Takashita , Michiko Hara , Dan Abels , Xin Li
发明人： Masayuki Takagishi , Hitoshi Iwasaki , Masahiro Takashita , Michiko Hara , Dan Abels , Xin Li
IPC分类号： H04B7/204
CPC分类号： G11B5/3983 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/398 , H01L43/08
摘要： A current perpendicular to plane magneto-resistance effect element includes: a magneto-resistance effect film comprised of a fixed magnetization layer, a free magnetization layer, and a complex spacer layer including an insulating layer and current paths formed through the insulating layer; a biasing mechanism for stabilizing the free magnetization layer; a shielding mechanism for ensuring a reproducing resolution of the magneto-resistance effect element; and a pair of electrodes for flowing a current perpendicular to a film surface of the magneto-resistance effect element; wherein a resistance area product (RA:Ω×μm2) is set to 0.00062×√{square root over ((GAP))}×TW+0.06 when a track width of the magneto-resistance effect element is defined as TW (nm) and a gap length of the magneto-resistance effect element is defined as GAP (nm).
摘要翻译：垂直于平面磁阻效应元件的电流包括：由固定磁化层，自由磁化层和包含绝缘层的复合间隔层和通过绝缘层形成的电流通路构成的磁阻效应膜; 用于稳定自由磁化层的偏置机构; 用于确保磁阻效应元件的再现分辨率的屏蔽机构; 以及一对电极，用于垂直于磁阻效应元件的膜表面流动电流; 其中当磁阻效应元件的磁道宽度被限定时，电阻面积乘积（RA：Omega xmum 2）被设定为0.00062×{（（GAP））}×TW + 0.06的平方根因为TW（nm）和磁阻效应元件的间隙长度被定义为GAP（nm）。

2. 发明授权

US08125744B2 Current perpendicular to plane magneto-resistance effect element, magnetic head, and magnetic recording/reproducing device 失效
标题翻译：电流垂直于平面磁阻效应元件，磁头和磁记录/再现装置
公开(公告)号：US08125744B2
公开(公告)日：2012-02-28
申请号：US12076438
申请日：2008-03-18
申请人： Masayuki Takagishi , Hitoshi Iwasaki , Masahiro Takashita , Michiko Hara , Dan Abels , Xin Li
发明人： Masayuki Takagishi , Hitoshi Iwasaki , Masahiro Takashita , Michiko Hara , Dan Abels , Xin Li
IPC分类号： G11B5/39
CPC分类号： G11B5/3983 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/398 , H01L43/08
摘要： A current perpendicular to plane magneto-resistance effect element includes: a magneto-resistance effect film comprised of a fixed magnetization layer, a free magnetization layer, and a complex spacer layer including an insulating layer and current paths formed through the insulating layer; a biasing mechanism for stabilizing the free magnetization layer; a shielding mechanism for ensuring a reproducing resolution of the magneto-resistance effect element; and a pair of electrodes for flowing a current perpendicular to a film surface of the magneto-resistance effect element; wherein a resistance area product (RA:Ω×μm2) is set to 0.00062×√{square root over ((GAP))}×TW+0.06 when a track width of the magneto-resistance effect element is defined as TW (nm) and a gap length of the magneto-resistance effect element is defined as GAP (nm).
摘要翻译：垂直于平面磁阻效应元件的电流包括：由固定磁化层，自由磁化层和包含绝缘层的复合间隔层和通过绝缘层形成的电流通路构成的磁阻效应膜; 用于稳定自由磁化层的偏置机构; 用于确保磁阻效应元件的再现分辨率的屏蔽机构; 以及一对电极，用于垂直于磁阻效应元件的膜表面流动电流; 其中，当磁阻效应元件的磁道宽度被定义为TW（nm）时，电阻面积乘积（RA:＆OHgr;×μm2）被设定为0.00062×√{（GAP））的平方根}×TW + 0.06 ），磁阻效应元件的间隙长度被定义为GAP（nm）。

3. 发明授权

US06757143B2 Magnetoresistive effect element, its manufacturing method, magnetic head, magnetic reproducing apparatus, and magnetic memory 有权
标题翻译：磁阻效应元件，其制造方法，磁头，磁再现装置和磁存储器
公开(公告)号：US06757143B2
公开(公告)日：2004-06-29
申请号：US10105342
申请日：2002-03-26
申请人： Tomomi Tunayama , Masayuki Takagishi , Kohichi Tateyama , Yuichi Ohsawa , Susumu Hashimoto , Michiko Hara , Akio Hori
发明人： Tomomi Tunayama , Masayuki Takagishi , Kohichi Tateyama , Yuichi Ohsawa , Susumu Hashimoto , Michiko Hara , Akio Hori
IPC分类号： G11B5127
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B2005/3996 , H01F10/3268 , H01L27/224 , H01L43/08 , Y10T29/49044
摘要： In a magnetoresistive effect element, at least one of electrodes for supplying a current perpendicularly to the film plane of a magnetoresistive effect film is narrower than the distance between bias-applying films. The sensitivity of the magnetoresistive effect film is lower in regions thereof near the bias-applying films due to an intensive bias magnetic field from the bias-applying films. However, the electrodes are disposed in an inner region having a high sensitivity avoiding those regions with a lower sensitivity to ensure a high sensitivity. The electrodes disposed on and under the magnetoresistive effect film are pillar-shaped to concentrate the sense current such that the sense current can be concentrically supplied exclusively to the region with the high sensitivity.
摘要翻译：在磁阻效应元件中，用于向垂直于磁阻效应膜的膜平面供给电流的电极中的至少一个比偏置施加膜之间的距离窄。由于来自偏置施加膜的强偏压磁场，磁阻效应膜的敏感性在偏置施加膜附近的区域中较低。然而，电极设置在具有高灵敏度的内部区域中，避免了具有较低灵敏度的那些区域，以确保高灵敏度。设置在磁阻效应膜上和下方的电极是柱状的，以集中感测电流，使得感测电流可以同心地提供给具有高灵敏度的区域。

4. 发明授权

US08379351B2 Magneto-resistance effect element, and method for manufacturing the same 有权
标题翻译：磁阻效应元件及其制造方法
公开(公告)号：US08379351B2
公开(公告)日：2013-02-19
申请号：US12073895
申请日：2008-03-11
申请人： Yoshihiko Fuji , Hideaki Fukuzawa , Hiromi Yuasa , Kunliang Zhang , Min Li , Michiko Hara , Yoshinari Kurosaki
发明人： Yoshihiko Fuji , Hideaki Fukuzawa , Hiromi Yuasa , Kunliang Zhang , Min Li , Michiko Hara , Yoshinari Kurosaki
IPC分类号： G11B5/39
CPC分类号： G11B5/3906 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/39 , G11B5/3909 , G11B2005/3996 , H01L43/08 , Y10S977/943
摘要： An example magneto-resistance effect element includes a fixed magnetization layer of which a magnetization is substantially fixed in one direction; a free magnetization layer of which a magnetization is rotated in accordance with an external magnetic field and which is formed opposite to the fixed magnetization layer; and a spacer layer including a current confining layer with an insulating layer and a conductor to pass a current through the insulating layer in a thickness direction thereof and which is located between the fixed magnetization layer and the free magnetization layer. A thin film layer is located on a side opposite to the spacer layer relative to the free magnetization layer and a functional layer containing at least one element selected from the group consisting of Si, Mg, B, Al is formed in or on at least one of the fixed magnetization layer, the free magnetization layer and the thin film layer.
摘要翻译：一个示例性磁阻效应元件包括一个固定的磁化层，其磁化强度基本上固定在一个方向上; 自由磁化层，其磁化根据外部磁场而旋转并与固定磁化层相对形成; 以及间隔层，其包括具有绝缘层的电流限制层和导体，以使电流在其厚度方向上穿过绝缘层，并且位于固定磁化层和自由磁化层之间。薄膜层相对于自由磁化层位于与间隔层相反的一侧，并且包含至少一种选自Si，Mg，B，Al的元素的功能层形成在至少一个的固定磁化层，自由磁化层和薄膜层。

5. 发明授权

US08213130B1 Magnetoresistive element, magnetic head assembly, magnetic recording/reproducing apparatus, memory cell array, and manufacturing method of magnetoresistive element 有权
标题翻译：磁阻元件，磁头组件，磁记录/再现装置，存储单元阵列和磁阻元件的制造方法
公开(公告)号：US08213130B1
公开(公告)日：2012-07-03
申请号：US13234356
申请日：2011-09-16
申请人： Yoshihiko Fuji , Michiko Hara , Hideaki Fukuzawa , Hiromi Yuasa , Shuichi Murakami
发明人： Yoshihiko Fuji , Michiko Hara , Hideaki Fukuzawa , Hiromi Yuasa , Shuichi Murakami
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3932 , G11B5/3983 , G11B2005/3996 , G11C11/161
摘要： A magnetoresistive element includes a first electrode, a second electrode, a first magnetic layer, a second magnetic layer, a spacer layer, an oxide layer, and a metal layer. The oxide layer is provided between the first electrode and the first magnetic layer, or within the first magnetic layer, or between the first magnetic layer and the spacer layer, or within the spacer layer, or between the spacer layer and the second magnetic layer, or within the second magnetic layer, or between the second magnetic layer and the second electrode. The oxide layer includes at least one element of Zn, In, Sn, and Cd, and at least one element of Fe, Co, and Ni. The metal layer includes at least one element of Zn, In, Sn, and Cd by not less than 5 at % and not more than 80 at %, and at least one element of Fe, Co, and Ni.
摘要翻译：磁阻元件包括第一电极，第二电极，第一磁性层，第二磁性层，间隔层，氧化物层和金属层。氧化物层设置在第一电极和第一磁性层之间，或在第一磁性层内，或第一磁性层与间隔层之间，或间隔层内，或间隔层与第二磁性层之间，或在第二磁性层内，或在第二磁性层和第二电极之间。氧化物层包括Zn，In，Sn和Cd中的至少一种元素，以及Fe，Co和Ni中的至少一种元素。金属层包括Zn，In，Sn和Cd中的至少一种元素，不小于5原子％且不大于80原子％，以及至少一种Fe，Co和Ni元素。

6. 发明申请

US20120050920A1 METHOD OF MANUFACTURING MAGNETORESISTIVE ELEMENT 失效
标题翻译：制造磁性元件的方法
公开(公告)号：US20120050920A1
公开(公告)日：2012-03-01
申请号：US13186389
申请日：2011-07-19
申请人： Akihiko Takeo , Yoshihiko Fuji , Hiromi Yuasa , Michiko Hara , Shuichi Murakami , Hideaki Fukuzawa
发明人： Akihiko Takeo , Yoshihiko Fuji , Hiromi Yuasa , Michiko Hara , Shuichi Murakami , Hideaki Fukuzawa
IPC分类号： H01F1/04 , G11B5/48
CPC分类号： G11B5/3903 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3163 , G11B5/3983 , H01F10/3259 , H01F10/3272 , H01F10/3295 , H01F41/303 , H01F41/325 , H01L43/12 , Y10T428/1129
摘要： According to one embodiment, a method of manufacturing a magnetoresistive element includes a layered structure and a pair of electrodes, the layered structure including a cap layer, a magnetization pinned layer, a magnetization free layer, a spacer layer and a functional layer provided in the magnetization pinned layer, between the magnetization pinned layer and the spacer layer, between the spacer layer and the magnetization free layer, in the magnetization free layer, or between the magnetization free layer and the cap layer and including an oxide, the method including forming a film including a base material of the functional layer, performing an oxidation treatment on the film using a gas containing oxygen in a form of at least one selected from the group consisting of molecule, ion, plasma and radical, and performing a reduction treatment using a reducing gas on the film after the oxidation treatment.
摘要翻译：根据一个实施例，制造磁阻元件的方法包括层状结构和一对电极，所述层叠结构包括盖层，磁化固定层，磁化自由层，间隔层和功能层在磁化被钉扎层和间隔层之间，在间隔层和磁化自由层之间，在磁化自由层中，或在磁化自由层和覆盖层之间并包括氧化物的磁化钉扎层，该方法包括形成膜，其包括功能层的基材，使用含有选自分子，离子，等离子体和自由基中的至少一种形式的含氧气体，对膜进行氧化处理，并使用在氧化处理后还原气膜。

7. 发明授权

US06850393B2 Magnetic head including a magneto resistive film connected to a yoke portion 有权
标题翻译：磁头包括连接到磁轭部分的磁阻膜
公开(公告)号：US06850393B2
公开(公告)日：2005-02-01
申请号：US09956127
申请日：2001-09-20
申请人： Michiko Hara , Tomomi Funayama , Masatoshi Yoshikawa , Kohichi Tateyama , Hiroaki Yoda
发明人： Michiko Hara , Tomomi Funayama , Masatoshi Yoshikawa , Kohichi Tateyama , Hiroaki Yoda
IPC分类号： G11B5/012 , G11B5/31 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/3116 , G11B5/3163 , G11B5/3916 , G11B2005/3996 , Y10T29/49043 , Y10T29/49046 , Y10T29/49128
摘要： In a yoke type reproducing magnetic head, a magnetoresistance effect film can be arranged in the vicinity of a medium facing surface, so that sensitivity is improved. The yoke type reproducing magnetic head comprises: a pair of magnetic yokes which face each other via a magnetic gap, at least one of the pair of magnetic yokes extending from a medium facing surface to a position retracted from the medium facing surface; a magnetoresistance effect film which has a curved portion protruding toward the medium facing surface in the magnetic gap and which is magnetically connected to the magnetic yokes; and an electrode which is electrically connected to the magnetoresistance effect film.
摘要翻译：在磁轭型重放磁头中，磁阻效应膜可以布置在面向介质的表面附近，从而提高灵敏度。磁轭式再现磁头包括：一对磁轭，其经由磁隙彼此相对，所述一对磁轭中的至少一个从介质相对表面延伸到从介质面向表面缩回的位置; 磁阻效应膜，其具有朝向磁隙中的与介质相对的表面突出并且与磁轭磁性连接的弯曲部分; 以及电连接到磁阻效应膜的电极。

8. 发明授权

US6108167A Magnetic head 有权
标题翻译：磁头
公开(公告)号：US6108167A
公开(公告)日：2000-08-22
申请号：US150926
申请日：1998-09-10
申请人： Kohichi Tateyama , Hiroaki Yoda , Tadahiko Kobayashi , Hiromi Sakata , Michiko Hara , Akio Hori , Takashi Koizumi , Tomohiko Nagata
发明人： Kohichi Tateyama , Hiroaki Yoda , Tadahiko Kobayashi , Hiromi Sakata , Michiko Hara , Akio Hori , Takashi Koizumi , Tomohiko Nagata
IPC分类号： G11B5/31 , G11B5/39 , G11B5/187
CPC分类号： G11B5/3109 , G11B5/3146 , G11B5/3153 , G11B5/3116 , G11B5/3163 , G11B5/3967
摘要： At least one magnetic pole out of a pair of magnetic poles is provided with a T-shaped magnetic pole having a magnetic pole chip at the position contacting with a magnetic gap and an auxiliary magnetic pole which is wider than thereof. The proximity of an air bearing surface of the T-shaped magnetic pole is composed of a laminated film containing a magnetic material layer with a high saturated magnetic flux density which composes the magnetic pole chip and a portion of the auxiliary magnetic pole and a magnetic material layer with a low saturated magnetic flux density which composes the remaining portion of the auxiliary magnetic pole. When the front portion of the magnetic pole with the track width of 1.8 .mu.m or less is composed of a laminated film containing a magnetic material layer having a high saturated magnetic flux density and a magnetic material layer having a low saturated magnetic flux density, the thickness of the magnetic material layer having the high saturated magnetic flux density is 0.5 .mu.m or more. According to the above described magnetic pole, the magnetic saturation near the tip portion of the magnetic pole is controlled, so that preferable magnetic field strength and magnetic field gradient can be attained when the track width is narrowed.
摘要翻译：在一对磁极中的至少一个磁极设置有在与磁隙接触的位置处具有磁极片的T形磁极和比其宽的辅助磁极。 T形磁极的空气轴承表面的接近度由包含构成磁极片和辅助磁极的一部分的磁性材料层和具有高饱和磁通密度的磁性材料层的叠层膜构成，具有构成辅助磁极的剩余部分的低饱和磁通密度的层。当轨道宽度为1.8μm或更小的磁极的前部由包含具有高饱和磁通密度的磁性材料层和具有低饱和磁通密度的磁性材料层的层叠膜构成时，具有高饱和磁通密度的磁性材料层的厚度为0.5μm以上。根据上述磁极，控制磁极尖端部附近的磁饱和，从而当磁道宽度变窄时可以获得优选的磁场强度和磁场梯度。

9. 发明授权

US5946167A Magnetoresistive sensor having lead and/or bias layer structure contributing to a narrow gap 失效
标题翻译：具有有助于窄间隙的引线和/或偏置层结构的磁阻传感器
公开(公告)号：US5946167A
公开(公告)日：1999-08-31
申请号：US816432
申请日：1997-03-14
申请人： Michiko Hara , Hiroaki Yoda , Yuichi Ohsawa
发明人： Michiko Hara , Hiroaki Yoda , Yuichi Ohsawa
IPC分类号： G11B5/31 , G11B5/39
CPC分类号： G11B5/3903 , G11B5/3967 , G11B5/3116 , G11B5/313
摘要： The present invention provides a magnetoresistive sensor comprising a magnetoresistive film (MR film) having a magnetic field response portion; a pair of leads on the MR film to supply sensing current to the MR film; and upper and lower (first and second) magnetic shield layers arranged so as to sandwich the MR film through a magnetic gap film, respectively. The pair of lead layers is deposited on the side of the magnetic field response portion, i.e., a portion of the MR film between the pair of the leads is the magnetic field response portion. The lead layer respectively provides multi-stage tapered portions, comprising a first tapered portion having a steep angle with respect to the MR film surface, and a second tapered portion having a shallow angle with respect to the MR film surface and provided continuously with the first tapered portion.
摘要翻译：本发明提供一种包括具有磁场响应部分的磁阻膜（MR膜）的磁阻传感器; 在MR膜上的一对引线，用于向MR膜提供感测电流; 以及分别通过磁隙膜夹住MR膜的上下（第一和第二）磁屏蔽层。一对引线层沉积在磁场响应部分的一侧，即一对引线之间的MR膜的一部分是磁场响应部分。引线层分别提供多级锥形部分，其包括相对于MR膜表面具有陡角的第一锥形部分和相对于MR膜表面具有浅角度的第二锥形部分，并连续地设置有第一锥形部分。

10. 发明授权

US08760154B2 Strain sensor element and blood pressure sensor 有权
标题翻译：应变传感器元件和血压传感器
公开(公告)号：US08760154B2
公开(公告)日：2014-06-24
申请号：US13110392
申请日：2011-05-18
申请人： Alexander Devin Giddings , Hideaki Fukuzawa , Yoshihiko Fuji , Hiromi Yuasa , Michiko Hara , Shuichi Murakami
发明人： Alexander Devin Giddings , Hideaki Fukuzawa , Yoshihiko Fuji , Hiromi Yuasa , Michiko Hara , Shuichi Murakami
IPC分类号： G01B7/24 , G01L1/00
CPC分类号： A61B5/021 , A61B5/02108 , G01B7/24 , G01L1/125
摘要： A strain sensor element comprises a laminated film which has a magnetic free layer, a spacer layer, and a magnetic reference layer. The free layer has a variable magnetization direction and a out-of-plane magnetization direction. The reference layer has a variable magnetization direction which is pinned more strongly than the magnetization of the free layer. The spacer layer provided between the free layer and the reference layer. A pair of electrodes is provided with a plane of the laminated film. A substrate is provided with either of the pair electrodes and can be strained. The rotation angle of the magnetization of the free layer is different from the rotation angle of the magnetization of the reference layer when the substrate is distorted. Electrical resistance is changed depending on the magnetization angle between the free layer and the reference layer, which allows the element to operate as a strain sensor.
摘要翻译：应变传感器元件包括具有无磁性层，间隔层和磁性参考层的层压膜。自由层具有可变的磁化方向和面外磁化方向。参考层具有可变的磁化方向，该自由层的磁化强度比自由层的磁化强。间隔层设置在自由层和参考层之间。一对电极设置有层叠膜的平面。基板设置有对电极中的任一个并且可以变形。当衬底失真时，自由层的磁化的旋转角度与参考层的磁化的旋转角度不同。电阻根据自由层和参考层之间的磁化角度而改变，这允许元件作为应变传感器工作。

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