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1. 发明授权

US09290841B2 Organoruthenium compound for chemical vapor deposition raw material and production method for the organoruthenium compound 有权
标题翻译：用于化学气相沉积原料的有机钌化合物和有机钌化合物的制备方法
公开(公告)号：US09290841B2
公开(公告)日：2016-03-22
申请号：US14007763
申请日：2012-07-24
申请人： Masayuki Saito , Junichi Taniuchi , Hirofumi Nakagawa
发明人： Masayuki Saito , Junichi Taniuchi , Hirofumi Nakagawa
IPC分类号： C07F15/00 , C23C16/00 , C23C16/16 , C23C16/30 , H01L21/285
CPC分类号： C23C16/16 , C07F15/0046 , C23C16/30 , H01L21/28556
摘要： The present invention is an organoruthenium compound for a chemical vapor deposition raw material, including dodecacarbonyl triruthenium represented by the following chemical formula, wherein the iron (Fe) concentration is 1 ppm or less. The DCR in the present invention can be produced by obtaining crude DCR by directly carbonylating ruthenium through allowing a ruthenium salt and carbon monoxide to react with each other and by purifying the crude DCR by a sublimation method. In the synthesis step, the concentration of Fe in the obtained crude DCR is preferably set at 10 ppm or less.
摘要翻译：本发明是用于化学气相沉积原料的有机钌化合物，其包括由以下化学式表示的十二羰基三钌，其中铁（Fe）浓度为1ppm以下。本发明中的DCR可以通过使钌盐和一氧化碳相互反应并通过升华法纯化粗制DCR，通过直接羰基化钌来获得粗制DCR来制备。在合成步骤中，所得到的粗制DCR中的Fe浓度优选为10ppm以下。

2. 发明申请

US20140057050A1 ORGANIC RUTHENIUM COMPOUND FOR CHEMICAL VAPOR DEPOSITION RAW MATERIAL AND PRODUCTION METHOD FOR SAID ORGANIC RUTHENIUM COMPOUND 有权
标题翻译：用于化学蒸气沉积的有机钌化合物原材料和有机有机化合物的生产方法
公开(公告)号：US20140057050A1
公开(公告)日：2014-02-27
申请号：US14007763
申请日：2012-07-24
申请人： Masayuki Saito , Junichi Taniuchi , Hirofumi Nakagawa
发明人： Masayuki Saito , Junichi Taniuchi , Hirofumi Nakagawa
IPC分类号： C23C16/16
CPC分类号： C23C16/16 , C07F15/0046 , C23C16/30 , H01L21/28556
摘要： The present invention is an organoruthenium compound for a chemical vapor deposition raw material, including dodecacarbonyl triruthenium represented by the following chemical formula, wherein the iron (Fe) concentration is 1 ppm or less. The DCR in the present invention can be produced by obtaining crude DCR by directly carbonylating ruthenium through allowing a ruthenium salt and carbon monoxide to react with each other and by purifying the crude DCR by a sublimation method. In the synthesis step, the concentration of Fe in the obtained crude DCR is preferably set at 10 ppm or less.
摘要翻译：本发明是用于化学气相沉积原料的有机钌化合物，其包括由以下化学式表示的十二羰基三钌，其中铁（Fe）浓度为1ppm以下。本发明中的DCR可以通过使钌盐和一氧化碳相互反应并通过升华法纯化粗制DCR，通过直接羰基化钌来获得粗制DCR来制备。在合成步骤中，所得到的粗制DCR中的Fe浓度优选为10ppm以下。

3. 发明授权

US08048193B2 Method for producing gold colloid and gold colloid 有权
标题翻译：金胶体和金胶体的生产方法
公开(公告)号：US08048193B2
公开(公告)日：2011-11-01
申请号：US12298313
申请日：2007-05-29
申请人： Junichi Taniuchi , Hirofumi Nakagawa , Koji Okamoto
发明人： Junichi Taniuchi , Hirofumi Nakagawa , Koji Okamoto
IPC分类号： B22F9/24
CPC分类号： B01J13/0043 , B22F1/0022 , B22F9/24 , B82Y30/00 , Y10S977/896
摘要： It is an object of the present invention to provide a method for producing gold colloid having a targeted particle size, a sharp particle size distribution and a uniform and perfect spherical shape. The present invention relates to a method for producing gold colloid including a nucleation step of forming nuclear colloidal particles by adding a first reducing agent to a first gold salt solution; and a growth step of growing nuclear colloid by adding a second gold salt and a second reducing agent to the solution of the nuclear colloidal particles, characterized in that the growth step is performed at least once; a citrate is used as the first reducing agent and an ascorbate is used as the second reducing agent; and the addition of the ascorbate in the growth step is performed simultaneously with addition of the second gold salt. According to the method for producing gold colloid of the present invention, gold colloid having a sharp particle size distribution and a uniform and perfect spherical shape can be obtained.
摘要翻译：本发明的目的是提供一种具有目标粒度，尖锐的粒度分布和均匀且完美的球形形状的金胶体的制造方法。本发明涉及一种生产金胶体的方法，包括通过向第一金盐溶液中加入第一还原剂形成核胶体颗粒的成核步骤; 以及通过向核胶体粒子的溶液中添加第二金盐和第二还原剂来生长核胶体的生长步骤，其特征在于，所述生长步骤至少进行一次; 使用柠檬酸盐作为第一还原剂，使用抗坏血酸作为第二还原剂; 并且在添加第二金盐的同时进行生长步骤中的抗坏血酸盐的添加。根据本发明的金胶体的制造方法，可以获得具有尖锐的粒度分布和均匀且完美的球形的金胶体。

4. 发明申请

US20100159471A1 PROCESS FOR PRODUCTION OF COLLOIDAL GOLD AND COLLOIDAL GOLD 有权
标题翻译：生产胶体金和胶体金的方法
公开(公告)号：US20100159471A1
公开(公告)日：2010-06-24
申请号：US12298313
申请日：2007-05-29
申请人： Junichi Taniuchi , Hirofumi Nakagawa , Koji Okamoto
发明人： Junichi Taniuchi , Hirofumi Nakagawa , Koji Okamoto
IPC分类号： G01N33/553
CPC分类号： B01J13/0043 , B22F1/0022 , B22F9/24 , B82Y30/00 , Y10S977/896
摘要： It is an object of the present invention to provide a method for producing gold colloid having a targeted particle size, a sharp particle size distribution and a uniform and perfect spherical shape. The present invention relates to a method for producing gold colloid including a nucleation step of forming nuclear colloidal particles by adding a first reducing agent to a first gold salt solution; and a growth step of growing nuclear colloid by adding a second gold salt and a second reducing agent to the solution of the nuclear colloidal particles, characterized in that the growth step is performed at least once; a citrate is used as the first reducing agent and an ascorbate is used as the second reducing agent; and the addition of the ascorbate in the growth step is performed simultaneously with addition of the second gold salt. According to the method for producing gold colloid of the present invention, gold colloid having a sharp particle size distribution and a uniform and perfect spherical shape can be obtained.
摘要翻译：本发明的目的是提供一种具有目标粒度，尖锐的粒度分布和均匀且完美的球形形状的金胶体的制造方法。本发明涉及一种生产金胶体的方法，包括通过向第一金盐溶液中加入第一还原剂形成核胶体颗粒的成核步骤; 以及通过向核胶体粒子的溶液中添加第二金盐和第二还原剂来生长核胶体的生长步骤，其特征在于，所述生长步骤至少进行一次; 使用柠檬酸盐作为第一还原剂，使用抗坏血酸作为第二还原剂; 并且在添加第二金盐的同时进行生长步骤中的抗坏血酸盐的添加。根据本发明的金胶体的制造方法，可以获得具有尖锐的粒度分布和均匀且完美的球形的金胶体。

5. 发明申请

US20110268878A1 ORGANORUTHENIUM COMPOUND FOR USE IN CHEMICAL VAPOR DEPOSITION AND CHEMICAL VAPOR DEPOSITION USING THE SAME 有权
标题翻译：化学气相沉积中使用的有机金属化合物和使用该化合物的化学气相沉积
公开(公告)号：US20110268878A1
公开(公告)日：2011-11-03
申请号：US13182720
申请日：2011-07-14
申请人： Junichi Taniuchi , Masayuki Saito , Minoru Ishida
发明人： Junichi Taniuchi , Masayuki Saito , Minoru Ishida
IPC分类号： C23C16/18
CPC分类号： C07F15/0046 , C07F17/02 , C23C16/18 , H01L21/28556
摘要： The present invention is an organoruthenium compound for use in production of a ruthenium or ruthenium compound thin film by chemical vapor deposition, including ruthenium and an arene group and norbornadiene both coordinated to the ruthenium and represented by the following formula. The present invention is an organoruthenium compound for use in chemical vapor deposition which does not require the coexistence of oxygen during the thin film formation, and moreover, is liquid at ordinary temperature, thereby having good handleability and recyclability. wherein the substituents, R1 to R6, of the arene group are each hydrogen or an alkyl group, and the total number of carbons of R1 to R6 (R1+R2+R3+R4+R5+R6) is 6 or less.
摘要翻译：本发明是用于通过化学气相沉积制造钌或钌化合物薄膜的有机钌化合物，包括钌和芳族基团和降冰片二烯，二者均与钌配位并由下式表示。本发明是用于化学气相沉积的有机钌化合物，其在薄膜形成期间不需要氧的共存，而且在常温下为液体，因此具有良好的可操作性和可回收性。其中芳基的取代基R 1〜R 6各自为氢或烷基，R 1〜R 6（R 1 + R 2 + R 3 + R 4 + R 5 + R 6）的碳原子数为6以下。

6. 发明授权

US08097299B2 Organic ruthenium compound for chemical vapor deposition, and chemical vapor deposition method using the organic ruthenium compound 有权
标题翻译：用于化学气相沉积的有机钌化合物和使用有机钌化合物的化学气相沉积方法
公开(公告)号：US08097299B2
公开(公告)日：2012-01-17
申请号：US12091782
申请日：2007-09-27
申请人： Junichi Taniuchi , Masayuki Saito , Minoru Ishida
发明人： Junichi Taniuchi , Masayuki Saito , Minoru Ishida
IPC分类号： C23C16/06 , C23C16/18
CPC分类号： C07F15/0046 , C07F17/02 , C23C16/18 , H01L21/28556
摘要： The present invention is an organoruthenium compound for use in production of a ruthenium or ruthenium compound thin film by chemical vapor deposition, including ruthenium and an arene group and norbornadiene both coordinated to the ruthenium and represented by the following formula. The present invention is an organoruthenium compound for use in chemical vapor deposition which does not require the coexistence of oxygen during the thin film formation, and moreover, is liquid at ordinary temperature, thereby having good handleability and recyclability. wherein the substituents, R1 to R6, of the arene group are each hydrogen or an alkyl group, and the total number of carbons of R1 to R6 (R1+R2+R3+R4+R5+R6) is 6 or less.
摘要翻译：本发明是用于通过化学气相沉积制造钌或钌化合物薄膜的有机钌化合物，包括钌和芳族基团和降冰片二烯，二者均与钌配位并由下式表示。本发明是用于化学气相沉积的有机钌化合物，其在薄膜形成期间不需要氧的共存，而且在常温下为液体，因此具有良好的可操作性和可回收性。其中芳基的取代基R 1〜R 6各自为氢或烷基，R 1〜R 6（R 1 + R 2 + R 3 + R 4 + R 5 + R 6）的碳原子数为6以下。

7. 发明授权

US08252377B2 Organoruthenium compound for use in chemical vapor deposition and chemical vapor deposition using the same 有权
标题翻译：用于化学气相沉积和使用其的化学气相沉积的有机钌化合物
公开(公告)号：US08252377B2
公开(公告)日：2012-08-28
申请号：US13182720
申请日：2011-07-14
申请人： Junichi Taniuchi , Masayuki Saito , Minoru Ishida
发明人： Junichi Taniuchi , Masayuki Saito , Minoru Ishida
IPC分类号： C23C16/18
CPC分类号： C07F15/0046 , C07F17/02 , C23C16/18 , H01L21/28556
摘要： The present invention is an organoruthenium compound for use in production of a ruthenium or ruthenium compound thin film by chemical vapor deposition, including ruthenium and an arene group and norbornadiene both coordinated to the ruthenium and represented by the following formula. The present invention is an organoruthenium compound for use in chemical vapor deposition which does not require the coexistence of oxygen during the thin film formation, and moreover, is liquid at ordinary temperature, thereby having good handleability and recyclability. wherein the substituents, R1 to R6, of the arene group are each hydrogen or an alkyl group, and the total number of carbons of R1 to R6 (R1+R2+R3+R4+R5+R6) is 6 or less.
摘要翻译：本发明是用于通过化学气相沉积制造钌或钌化合物薄膜的有机钌化合物，包括钌和芳族基团和降冰片二烯，二者均与钌配位并由下式表示。本发明是用于化学气相沉积的有机钌化合物，其在薄膜形成期间不需要氧的共存，而且在常温下为液体，因此具有良好的可操作性和可回收性。其中芳基的取代基R 1〜R 6各自为氢或烷基，R 1〜R 6（R 1 + R 2 + R 3 + R 4 + R 5 + R 6）的碳原子数为6以下。

8. 发明申请

US20090238970A1 ORGANIC RUTHENIUM COMPOUND FOR CHEMICAL VAPOR DEPOSITION, AND CHEMICAL VAPOR DEPOSITION METHOD USING THE ORGANIC RUTHENIUM COMPOUND 有权
标题翻译：用于化学蒸气沉积的有机元素化合物和使用有机金属化合物的化学气相沉积方法
公开(公告)号：US20090238970A1
公开(公告)日：2009-09-24
申请号：US12091782
申请日：2007-09-27
申请人： Junichi Taniuchi , Masayuki Saito , Minoru Ishida
发明人： Junichi Taniuchi , Masayuki Saito , Minoru Ishida
IPC分类号： C23C16/06 , C07F17/02 , C23C16/18
CPC分类号： C07F15/0046 , C07F17/02 , C23C16/18 , H01L21/28556
摘要： The present invention is an organoruthenium compound for use in production of a ruthenium or ruthenium compound thin film by chemical vapor deposition, including ruthenium and an arene group and norbornadiene both coordinated to the ruthenium and represented by the following formula. The present invention is an organoruthenium compound for use in chemical vapor deposition which does not require the coexistence of oxygen during the thin film formation, and moreover, is liquid at ordinary temperature, thereby having good handleability and recyclability. wherein the substituents, R1 to R6, of the arene group are each hydrogen or an alkyl group, and the total number of carbons of R1 to R6 (R1+R2+R3+R4+R5+R6) is 6 or less.
摘要翻译：本发明是用于通过化学气相沉积制造钌或钌化合物薄膜的有机钌化合物，包括钌和芳族基团和降冰片二烯，二者均与钌配位并由下式表示。本发明是用于化学气相沉积的有机钌化合物，其在薄膜形成期间不需要氧的共存，而且在常温下为液体，因此具有良好的可操作性和可回收性。其中芳基的取代基R 1〜R 6各自为氢或烷基，R 1〜R 6（R 1 + R 2 + R 3 + R 4 + R 5 + R 6）的碳原子数为6以下。

9. 发明授权

US06555701B2 CVD material compound and method for manufacturing the same and CVD method of ruthenium or ruthenium compound thin film 失效
标题翻译： CVD材料化合物及其制造方法以及钌或钌化合物薄膜的CVD法
公开(公告)号：US06555701B2
公开(公告)日：2003-04-29
申请号：US10175873
申请日：2002-06-21
申请人： Masayuki Saito , Junichi Taniuchi , Koji Okamoto , Hiroaki Suzuki
发明人： Masayuki Saito , Junichi Taniuchi , Koji Okamoto , Hiroaki Suzuki
IPC分类号： C07F1500
CPC分类号： C07C49/92 , C23C16/18 , H01L28/65
摘要： The present invention provides a CVD material compound based on an organic ruthenium compound, the organic ruthenium compound consisting of one of cis and trans isomers of tris (2,4-octa-dionato) ruthenium (III). The organic ruthenium compound which consists of cis or trans isomer can be isolated by the steps of preparing tris (2,4-octa-dionato) ruthenium (III) in any method, making the tris (2,4-octa-dionato) ruthenium (III) adsorbed on an adsorbent including alumina, bringing the adsorbent into contact with a first solvent to elute the trans isomer and then bringing the adsorbent into contact with a second solvent having a polarity higher than that of the first solvent to elute the cis isomer.
摘要翻译：本发明提供一种基于有机钌化合物的CVD材料化合物，由三（2,4-octa-dionato）钌（III）的顺式和反式异构体之一组成的有机钌化合物。由顺式或反式异构体组成的有机钌化合物可以通过以任何方法制备三（2,4-辛二醛）钌（III）的步骤来分离，制备三（2,4-辛二醛）钌（III）吸附在包含氧化铝的吸附剂上，使吸附剂与第一溶剂接触以洗脱反式异构体，然后使吸附剂与极性高于第一溶剂的第二溶剂接触以洗脱顺式异构体。

10. 发明授权

US08889582B2 Hydrogen combustion catalyst and method for producing thereof, and method for combusting hydrogen 有权
标题翻译：氢燃烧催化剂及其制造方法，氢燃烧方法
公开(公告)号：US08889582B2
公开(公告)日：2014-11-18
申请号：US13518976
申请日：2011-01-07
申请人： Hirosi Noguchi , Junichi Taniuchi , Hitoshi Kubo , Yasunori Iwai , Katsumi Sato
发明人： Hirosi Noguchi , Junichi Taniuchi , Hitoshi Kubo , Yasunori Iwai , Katsumi Sato
IPC分类号： B01J23/42 , B01J21/08 , B01J37/02 , B01J33/00 , C01B5/00 , B01J31/02 , G21B1/11
CPC分类号： G21B1/115 , B01J21/08 , B01J23/42 , B01J31/0274 , B01J33/00 , B01J37/0203 , B01J37/0207 , B01J37/0209 , C01B5/00 , Y02E60/324
摘要： The present invention is a hydrogen combustion catalyst including a catalyst metal supported on a carrier composed of an inorganic oxide, wherein a functional group having at the end thereof at least an alkyl group having three or less carbon atoms is bonded by substitution to each of a certain fraction or the whole of the hydroxyl groups on the surface of the carrier. The functional group bonded to each of a certain fraction or the whole of the hydroxyl groups on the surface of the carrier is preferably an organic silane. The hydrogen combustion catalyst according to the present invention is capable of maintaining the activity thereof even when a hydrogen-containing gas, a treatment object, contains a water content equal to or less than the saturated water vapor content and the reaction temperature is set at or around room temperature, namely, at 0 to 40° C.
摘要翻译：本发明是一种氢燃烧催化剂，其包含负载在由无机氧化物构成的载体上的催化剂金属，其中末端至少具有3个以下碳原子的烷基的官能团通过取代键接至载体表面上的某些部分或全部羟基。与载体表面上的某一部分或全部羟基键合的官能团优选为有机硅烷。本发明的氢燃烧催化剂即使在含氢气体，处理对象物含有等于或小于饱和水蒸汽含量的水含量并且反应温度设定在或等于或等于或等于在室温附近，即在0至40℃

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