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1. 发明申请

US20100027032A1 EDGE DETECTION METHOD 有权
标题翻译：边缘检测方法
公开(公告)号：US20100027032A1
公开(公告)日：2010-02-04
申请号：US12510591
申请日：2009-07-28
申请人： Masayuki Dohi , Itsuko Sakai , Takayuki Sakai , Shunji Kikuchi , Takuto Inoue , Akihiro Hori , Masayuki Narita
发明人： Masayuki Dohi , Itsuko Sakai , Takayuki Sakai , Shunji Kikuchi , Takuto Inoue , Akihiro Hori , Masayuki Narita
IPC分类号： G01B11/00
CPC分类号： G01B11/028 , H01L21/67259
摘要： An edge detection method includes preparing a transparent substrate which includes a first main face having a first main region and a first peripheral region and a second main face having a second main region and a second peripheral region, the first peripheral region having an inclination angle of θa1 and the second peripheral region having an inclination angle of θa2, causing measuring light to enter the first peripheral region from a direction perpendicular to the first main region, detecting a non-emitting region where the measuring light is not emitted from the second peripheral region, and detecting an edge of the transparent substrate on the basis of the non-emitting region, wherein if a refractive index of the transparent substrate is n, the inclination angles θa1 and θa2 satisfy the following expression: n×sin(θa1+θa2−arcsin(sin θa1/n))≧1
摘要翻译：边缘检测方法包括制备透明基板，其包括具有第一主区域和第一周边区域的第一主面和具有第二主区域和第二周边区域的第二主面，所述第一周边区域具有倾斜角 θa1和第二外围区域具有θa2的倾斜角度，使得测量光从垂直于第一主区域的方向进入第一周边区域，检测测量光不从第二周边区域发射的不发射区域，并且基于所述不发射区域检测所述透明基板的边缘，其中如果所述透明基板的折射率为n，则所述倾斜角度θa1和θa2满足以下表达式：nxsin（θa1+θa2-arcsin（ sinθa1/ n））> = 1

2. 发明授权

US08339615B2 Edge detection method for transparent substrate by detecting non-light-emitting region of transparent substrate 有权
标题翻译：透明基板的非发光区域的边缘检测方法
公开(公告)号：US08339615B2
公开(公告)日：2012-12-25
申请号：US12510591
申请日：2009-07-28
申请人： Masayuki Dohi , Itsuko Sakai , Takayuki Sakai , Shunji Kikuchi , Takuto Inoue , Akihiro Hori , Masayuki Narita
发明人： Masayuki Dohi , Itsuko Sakai , Takayuki Sakai , Shunji Kikuchi , Takuto Inoue , Akihiro Hori , Masayuki Narita
IPC分类号： G01B11/00 , G01N21/00
CPC分类号： G01B11/028 , H01L21/67259
摘要： An edge detection method includes preparing a transparent substrate which includes a first main face having a first main region and a first peripheral region and a second main face having a second main region and a second peripheral region, the first peripheral region having an inclination angle of θa1 and the second peripheral region having an inclination angle of θa2, causing measuring light to enter the first peripheral region from a direction perpendicular to the first main region, detecting a non-emitting region where the measuring light is not emitted from the second peripheral region, and detecting an edge of the transparent substrate on the basis of the non-emitting region, wherein if a refractive index of the transparent substrate is n, the inclination angles θa1 and θa2satisfy the following expression: n×sin(θa1+θa2−arcsin(sin θa1/n))≧1.
摘要翻译：边缘检测方法包括制备透明基板，其包括具有第一主区域和第一周边区域的第一主面和具有第二主区域和第二周边区域的第二主面，所述第一周边区域具有倾斜角 a1和第二周边区域具有倾斜角度; a2，使得测量光从垂直于第一主区域的方向进入第一周边区域，检测不发射测量光的不发射区域第二周边区域，并且基于非发光区域检测透明基板的边缘，其中如果透明基板的折射率为n，则倾斜角度＆a1; a1和＆het; a2不满足以下表达式：n ×sin（＆thetas; a1 +＆thetas; a2-arcsin（sin＆thetas; a1 / n））≥1。

3. 发明授权

US08580652B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08580652B2
公开(公告)日：2013-11-12
申请号：US12875628
申请日：2010-09-03
申请人： Atsuko Kawasaki , Kenichiro Hagiwara , Ikuko Inoue , Kazutaka Akiyama , Itsuko Sakai , Mie Matsuo , Masahiro Sekiguchi , Yoshiteru Koseki , Hiroki Neko , Koushi Tozuka , Kazuhiko Nakadate , Takuto Inoue
发明人： Atsuko Kawasaki , Kenichiro Hagiwara , Ikuko Inoue , Kazutaka Akiyama , Itsuko Sakai , Mie Matsuo , Masahiro Sekiguchi , Yoshiteru Koseki , Hiroki Neko , Koushi Tozuka , Kazuhiko Nakadate , Takuto Inoue
IPC分类号： H01L29/78
CPC分类号： H01L27/14683 , H01L21/76898 , H01L23/481 , H01L23/522 , H01L24/13 , H01L24/32 , H01L27/14618 , H01L2224/13111 , H01L2224/16 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/12043 , H01L2924/3025 , H01L2924/00
摘要： According to one embodiment, a manufacturing method of a semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate having first and second main surfaces, and a through hole passing through between the first and second main surfaces, a pad on the first main surface, a through electrode in the through hole, and a connection structure including a connection portion to directly connect the pad and the through electrode, and another connection portion to indirectly connect the pad and the through electrode. The method includes forming an isolation region in the first main surface, the isolation region being in a region where the through electrode is to be formed and being in a region other than the region where the through hole is to be formed, forming the pad, and forming the through hole by processing the substrate to expose a part of the pad.
摘要翻译：根据一个实施例，公开了一种半导体器件的制造方法。半导体器件包括具有第一和第二主表面的半导体衬底，以及穿过第一和第二主表面之间的通孔，第一主表面上的焊盘，通孔中的通孔，以及包括连接部分，以直接连接焊盘和通孔，以及另一个连接部分，以间接连接焊盘和通孔。该方法包括在第一主表面中形成隔离区，隔离区位于要形成通孔的区域中，并且位于除了形成通孔的区域之外的区域中，形成垫，以及通过处理所述衬底形成所述通孔以暴露所述衬垫的一部分。

4. 发明申请

US20110068476A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110068476A1
公开(公告)日：2011-03-24
申请号：US12875628
申请日：2010-09-03
申请人： Atsuko KAWASAKI , Kenichiro Hagiwara , Ikuko Inoue , Kazutaka Akiyama , Itsuko Sakai , Mie Matsuo , Masahiro Sekiguchi , Yoshiteru Koseki , Hiroki Neko , Koushi Tozuka , Kazuhiko Nakadate , Takuto Inoue
发明人： Atsuko KAWASAKI , Kenichiro Hagiwara , Ikuko Inoue , Kazutaka Akiyama , Itsuko Sakai , Mie Matsuo , Masahiro Sekiguchi , Yoshiteru Koseki , Hiroki Neko , Koushi Tozuka , Kazuhiko Nakadate , Takuto Inoue
IPC分类号： H01L23/48 , H01L21/762
CPC分类号： H01L27/14683 , H01L21/76898 , H01L23/481 , H01L23/522 , H01L24/13 , H01L24/32 , H01L27/14618 , H01L2224/13111 , H01L2224/16 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/12043 , H01L2924/3025 , H01L2924/00
摘要： According to one embodiment, a manufacturing method of a semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate having first and second main surfaces, and a through hole passing through between the first and second main surfaces, a pad on the first main surface, a through electrode in the through hole, and a connection structure including a connection portion to directly connect the pad and the through electrode, and another connection portion to indirectly connect the pad and the through electrode. The method includes forming an isolation region in the first main surface, the isolation region being in a region where the through electrode is to be formed and being in a region other than the region where the through hole is to be formed, forming the pad, and forming the through hole by processing the substrate to expose a part of the pad.
摘要翻译：根据一个实施例，公开了一种半导体器件的制造方法。半导体器件包括具有第一和第二主表面的半导体衬底，以及穿过第一和第二主表面之间的通孔，第一主表面上的焊盘，通孔中的通孔，以及包括连接部分，以直接连接焊盘和通孔，以及另一个连接部分，以间接连接焊盘和通孔。该方法包括在第一主表面中形成隔离区，隔离区位于要形成通孔的区域中，并且位于除了形成通孔的区域之外的区域中，形成垫，以及通过处理所述衬底形成所述通孔以暴露所述衬垫的一部分。

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