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    • 2. 发明授权
    • Surface-emission type semiconductor laser
    • 表面发射型半导体激光器
    • US07974328B2
    • 2011-07-05
    • US12531326
    • 2008-03-14
    • Naofumi SuzukiMasayoshi TsujiTakayoshi AnanKenichiro YashikiHiroshi HatakeyamaKimiyoshi FukatsuTakeshi Akagawa
    • Naofumi SuzukiMasayoshi TsujiTakayoshi AnanKenichiro YashikiHiroshi HatakeyamaKimiyoshi FukatsuTakeshi Akagawa
    • H01S5/00
    • H01S5/06226H01S5/1039H01S5/18308H01S5/18369H01S5/227H01S5/3095
    • The present invention provides a surface-emission type semiconductor laser wherein an effective length of a cavity is reduced, thereby enabling to realize a higher-speed direct modulation. In the surface-emission type semiconductor laser according to the present invention, when supposing the optical path length (L) of a resonator part relative to a lasing wavelength λ0 to be given as 0.9×λ0≦L≦1.1×λ0, and denoting the refractive indexes of a high refractive index layer and a low refractive index layer of a dielectric DBR by nH1 and nL1; the average refractive index within an optical path length λ0/4 in the semiconductor in contact with the dielectric DBR by nS1; and the refractive indexes of the high refractive index layer and the low refractive index layer of a semiconductor DBR by nH2 and nL2, respective materials to be used are selected so as to satisfy the following conditions (1) and (2): nH1>f(nS1)nL12+g(nS1)nL1+h(nS1),  (1) where f(nS1)=0.0266 nS12−0.2407 nS1+0.6347; g(nS1)=−0.0508 nS12+0.4335 nS1−0.0085; and h(nS1)=0.0382 nS12−0.3194 nS1+0.7398, and nH2−nL2>0.4.  (2)
    • 本发明提供了一种表面发射型半导体激光器,其中空腔的有效长度减小,从而能够实现更高速度的直接调制。 在根据本发明的表面发射型半导体激光器中,当假设谐振器部分相对于激光波长λ0的光程长度(L)为0.9×λ0≦̸ L≦̸ 1.1×λ0时,表示 通过nH1和nL1的介电DBR的高折射率层和低折射率层的折射率; 通过nS1与电介质DBR接触的半导体中光路长度λ0/ 4内的平均折射率; 并且通过nH2和nL2对半导体DBR的高折射率层和低折射率层的折射率进行选择,以满足以下条件(1)和(2):nH1> f (nS1)nL12 + g(nS1)nL1 + h(nS1),(1)其中f(nS1)= 0.0266 nS12-0.2407 nS1 + 0.6347; g(nS1)= - 0.0508 nS12 + 0.4335 nS1-0.0085; h(nS1)= 0.0382 nS12-0.3194 nS1 + 0.7398,nH2-nL2> 0.4。 (2)
    • 3. 发明申请
    • SURFACE-EMISSION TYPE SEMICONDUCTOR LASER
    • 表面发射型半导体激光器
    • US20100034233A1
    • 2010-02-11
    • US12531326
    • 2008-03-14
    • Naofumi SuzukiMasayoshi TsujiTakayoshi AnanKenichiro YashikiHiroshi HatakeyamaKimiyoshi FukatsuTakeshi Akagawa
    • Naofumi SuzukiMasayoshi TsujiTakayoshi AnanKenichiro YashikiHiroshi HatakeyamaKimiyoshi FukatsuTakeshi Akagawa
    • H01S5/00
    • H01S5/06226H01S5/1039H01S5/18308H01S5/18369H01S5/227H01S5/3095
    • The present invention provides a surface-emission type semiconductor laser wherein an effective length of a cavity is reduced, thereby enabling to realize a higher-speed direct modulation. In the surface-emission type semiconductor laser according to the present invention, when supposing the optical path length (L) of a resonator part relative to a lasing wavelength λ0 to be given as 0.9×λ0≦L≦1.1×λ0, and denoting the refractive indexes of a high refractive index layer and a low refractive index layer of a dielectric DBR by nH1 and nL1; the average refractive index within an optical path length λ0/4 in the semiconductor in contact with the dielectric DBR by nS1; and the refractive indexes of the high refractive index layer and the low refractive index layer of a semiconductor DBR by nH2 and nL2, respective materials to be used are selected so as to satisfy the following conditions (1) and (2): nH1>f(nS1)nL12+g(nS1)nL1+h(nS1),  (1) where f(nS1)=0.0266 nS12−0.2407 nS1+0.6347; g(nS1)=−0.0508 nS12+0.4335 nS1−0.0085; and h(nS1)=0.0382 nS12−0.3194 nS1+0.7398, and nH2−nL2>0.4.  (2)
    • 本发明提供了一种表面发射型半导体激光器,其中空腔的有效长度减小,从而能够实现更高速度的直接调制。 在根据本发明的表面发射型半导体激光器中,当假设谐振器部分相对于激发波长λ0的光程长度(L)被给定为0.9×λλ<= L <= 1.1×λ10,并且表示 通过nH1和nL1的介电DBR的高折射率层和低折射率层的折射率; 通过nS1与电介质DBR接触的半导体中的光程长度λ0/ 4内的平均折射率; 并且通过nH2和nL2对半导体DBR的高折射率层和低折射率层的折射率进行选择,以满足以下条件(1)和(2):nH1> f (nS1)nL12 + g(nS1)nL1 + h(nS1),(1)其中f(nS1)= 0.0266 nS12-0.2407 nS1 + 0.6347; g(nS1)= - 0.0508 nS12 + 0.4335 nS1-0.0085; h(nS1)= 0.0382 nS12-0.3194 nS1 + 0.7398,nH2-nL2> 0.4。 (2)