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1. 发明申请

US20070120982A1 Imaging Device 有权
标题翻译：成像设备
公开(公告)号：US20070120982A1
公开(公告)日：2007-05-31
申请号：US11553577
申请日：2006-10-27
申请人： Masaya OITA , Hiromichi Tanaka , Masafumi Kimata
发明人： Masaya OITA , Hiromichi Tanaka , Masafumi Kimata
IPC分类号： H04N5/225 , H04N9/04
CPC分类号： H04N5/2357 , H04N5/23245 , H04N5/235 , H04N5/3456 , H04N5/3559 , H04N5/37457
摘要： In an imaging device having an all-pixel read mode for reading signals from all pixels and a pixel downsampling read mode for reading signals by appropriately discarding pixels, adjacent ones of pixels use a floating diffusion capacitance, an amplifying transistor, a reset switch and a selection switch in common. In the pixel downsampling read mode, not only a primary capacitance but also a photodiode in each pixel to be discarded are used as capacitances for storing signal charges transferred from transfer switches. This makes it possible to lower the gate voltage of the amplifying transistor as compared with the case of using only the primary capacitance as a capacitance for storing signal charges transferred from a transfer switch to reduce the sensitivity of the pixels, thereby reducing the occurrence of flicker.
摘要翻译：在具有用于从所有像素读取信号的全像素读取模式和用于通过适当地丢弃像素来读取信号的像素下采样读取模式的成像装置中，相邻的像素使用浮动扩散电容，放大晶体管，复位开关和选择开关共同。在像素下采样读取模式中，不仅要将要丢弃的每个像素中的一次电容，而且还将光电二极管用作用于存储从转换开关传送的信号电荷的电容。与仅使用一次电容作为用于存储从转换开关传送的信号电荷的电容的情况相比，可以降低放大晶体管的栅极电压，以降低像素的灵敏度，从而减少闪烁的发生。

2. 发明授权

US07639298B2 Imaging device 有权
标题翻译：成像设备
公开(公告)号：US07639298B2
公开(公告)日：2009-12-29
申请号：US11637666
申请日：2006-12-13
申请人： Masaya Oita , Hiromichi Tanaka , Masafumi Kimata , Sumio Terakawa
发明人： Masaya Oita , Hiromichi Tanaka , Masafumi Kimata , Sumio Terakawa
IPC分类号： H04N5/335
CPC分类号： H04N5/335 , H04N5/235 , H04N5/2357 , H04N5/3745 , H04N5/37457
摘要： Adjacent pixels in a pixel circuit of an imaging device use a primary capacitance, an amplifying transistor, a reset switch and a selection switch in common. Each pixel has a photodiode and a transfer switch having first and second gates provided on the photodiode side and the primary capacitance side, respectively. In a pixel downsampling read mode, the first and second gate voltages of each pixel to be discarded are brought to high level, and thereafter the first and second gate voltages of each pixel to be read are brought to high level, to transfer charge generated in the photodiode of the pixel to be read to the primary capacitance and the photodiode in each pixel to be discarded. This enables reduction of the potential of the primary capacitance, and hence reduction of the pixel sensitivity than using only the primary capacitance to store charge transferred from the transfer switch.
摘要翻译：成像装置的像素电路中的相邻像素共同使用一次电容，放大晶体管，复位开关和选择开关。每个像素具有光电二极管和转移开关，分别具有设置在光电二极管侧和初级电容侧的第一和第二栅极。在像素下采样读取模式中，要丢弃的每个像素的第一和第二栅极电压被提高到高电平，然后将要读取的每个像素的第一和第二栅极电压变为高电平，要读取的像素的光电二极管和要丢弃的每个像素中的光电二极管。这使得能够降低主电容的电位，并因此降低像素灵敏度，而不仅仅是使用一次电容来存储从转换开关传送的电荷。

3. 发明授权

US07595830B2 Imaging device with normal and reduced sensitivity readout 有权
标题翻译：成像装置具有正常和降低的灵敏度读数
公开(公告)号：US07595830B2
公开(公告)日：2009-09-29
申请号：US11553577
申请日：2006-10-27
申请人： Masaya Oita , Hiromichi Tanaka , Masafumi Kimata
发明人： Masaya Oita , Hiromichi Tanaka , Masafumi Kimata
IPC分类号： H04N5/217 , H04N5/21 , H04N5/225
CPC分类号： H04N5/2357 , H04N5/23245 , H04N5/235 , H04N5/3456 , H04N5/3559 , H04N5/37457
摘要： In an imaging device having an all-pixel read mode for reading signals from all pixels and a pixel downsampling read mode for reading signals by appropriately discarding pixels, adjacent ones of pixels use a floating diffusion capacitance, an amplifying transistor, a reset switch and a selection switch in common. In the pixel downsampling read mode, not only a primary capacitance but also a photodiode in each pixel to be discarded are used as capacitances for storing signal charges transferred from transfer switches. This makes it possible to lower the gate voltage of the amplifying transistor as compared with the case of using only the primary capacitance as a capacitance for storing signal charges transferred from a transfer switch to reduce the sensitivity of the pixels, thereby reducing the occurrence of flicker.
摘要翻译：在具有用于从所有像素读取信号的全像素读取模式和用于通过适当地丢弃像素来读取信号的像素下采样读取模式的成像装置中，相邻的像素使用浮动扩散电容，放大晶体管，复位开关和选择开关共同。在像素下采样读取模式中，不仅要将要丢弃的每个像素中的一次电容，而且还将光电二极管用作用于存储从转换开关传送的信号电荷的电容。与仅使用一次电容作为用于存储从转换开关传送的信号电荷的电容的情况相比，可以降低放大晶体管的栅极电压，以降低像素的灵敏度，从而减少闪烁的发生。

4. 发明申请

US20070131993A1 Imaging device 有权
标题翻译：成像设备
公开(公告)号：US20070131993A1
公开(公告)日：2007-06-14
申请号：US11637666
申请日：2006-12-13
申请人： Masaya Oita , Hiromichi Tanaka , Masafumi Kimata , Sumio Terakawa
发明人： Masaya Oita , Hiromichi Tanaka , Masafumi Kimata , Sumio Terakawa
IPC分类号： H01L31/113
CPC分类号： H04N5/335 , H04N5/235 , H04N5/2357 , H04N5/3745 , H04N5/37457
摘要： Adjacent pixels in a pixel circuit of an imaging device use a primary capacitance, an amplifying transistor, a reset switch and a selection switch in common. Each pixel has a photodiode and a transfer switch having first and second gates provided on the photodiode side and the primary capacitance side, respectively. In a pixel downsampling read mode, the first and second gate voltages of each pixel to be discarded are brought to high level, and thereafter the first and second gate voltages of each pixel to be read are brought to high level, to transfer charge generated in the photodiode of the pixel to be read to the primary capacitance and the photodiode in each pixel to be discarded. This enables reduction of the potential of the primary capacitance, and hence reduction of the pixel sensitivity than using only the primary capacitance to store charge transferred from the transfer switch.
摘要翻译：成像装置的像素电路中的相邻像素共同使用一次电容，放大晶体管，复位开关和选择开关。每个像素具有光电二极管和转移开关，分别具有设置在光电二极管侧和初级电容侧的第一和第二栅极。在像素下采样读取模式中，要丢弃的每个像素的第一和第二栅极电压被提高到高电平，然后将要读取的每个像素的第一和第二栅极电压变为高电平，要读取的像素的光电二极管和要丢弃的每个像素中的光电二极管。这使得能够降低主电容的电位，并因此降低像素灵敏度，而不仅仅是使用一次电容来存储从转换开关传送的电荷。

5. 发明授权

US08284299B2 Solid state imaging device for correcting level variations in output signals 有权
标题翻译：用于校正输出信号电平变化的固态成像装置
公开(公告)号：US08284299B2
公开(公告)日：2012-10-09
申请号：US11473138
申请日：2006-06-23
申请人： Hiromichi Tanaka , Hideto Yoshimura , Sumio Terakawa , Masafumi Kimata
发明人： Hiromichi Tanaka , Hideto Yoshimura , Sumio Terakawa , Masafumi Kimata
IPC分类号： H04N5/235
CPC分类号： H04N5/2353 , H04N5/2351
摘要： A solid state imaging device detects the period of energy variation of discharge type illumination, and sets a total exposure time to match the detected period. The total exposure time is divided into alternating valid and invalid exposure times by a division ratio to make the sum of the valid exposure times equal to an actual exposure time corresponding to an actual speed of an electronic shutter. Charges accumulated in a CMOS sensor during the valid exposure times are stored in a floating diffusion, whereas charges accumulated during the invalid exposure times are drained. At the end of the total exposure time, the charges stored during the valid exposure times are converted to an electrical signal which is output to a signal processing circuit. This device can correct variation of output signals which corresponds to the illumination energy variation when the shutter is operated for imaging under high luminance illumination.
摘要翻译：固态成像装置检测放电型照明的能量变化的周期，并设定与所检测的周期相匹配的总曝光时间。总曝光时间被划分为交替有效和无效的曝光时间，以使得有效曝光时间的总和等于对应于电子快门的实际速度的实际曝光时间。在有效曝光时间期间，CMOS传感器中累积的电荷被存储在浮动扩散中，而在无效曝光时间期间积累的电荷被排出。在总曝光时间结束时，在有效曝光时间期间存储的电荷被转换为输出到信号处理电路的电信号。当在高亮度照明下操作快门用于成像时，该装置可以校正对应于照明能量变化的输出信号的变化。

6. 发明申请

US20060290797A1 Solid state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US20060290797A1
公开(公告)日：2006-12-28
申请号：US11473138
申请日：2006-06-23
申请人： Hiromichi Tanaka , Hideto Yoshimura , Sumio Terakawa , Masafumi Kimata
发明人： Hiromichi Tanaka , Hideto Yoshimura , Sumio Terakawa , Masafumi Kimata
IPC分类号： H04N5/335
CPC分类号： H04N5/2353 , H04N5/2351
摘要： A solid state imaging device detects the period of energy variation of discharge type illumination, and sets a total exposure time to match the detected period. The total exposure time is divided into alternating valid and invalid exposure times by a division ratio to make the sum of the valid exposure times equal to an actual exposure time corresponding to an actual speed of an electronic shutter. Charges accumulated in a CMOS sensor during the valid exposure times are stored in a floating diffusion, whereas charges accumulated during the invalid exposure times are drained. At the end of the total exposure time, the charges stored during the valid exposure times are converted to an electrical signal which is output to a signal processing circuit. This device can correct variation of output signals which corresponds to the illumination energy variation when the shutter is operated for imaging under high luminance illumination.
摘要翻译：固态成像装置检测放电型照明的能量变化的周期，并设定与所检测的周期相匹配的总曝光时间。总曝光时间被划分为交替有效和无效的曝光时间，以使得有效曝光时间的总和等于对应于电子快门的实际速度的实际曝光时间。在有效曝光时间期间，CMOS传感器中累积的电荷被存储在浮动扩散中，而在无效曝光时间期间积累的电荷被排出。在总曝光时间结束时，在有效曝光时间期间存储的电荷被转换为输出到信号处理电路的电信号。当在高亮度照明下操作快门用于成像时，该装置可以校正对应于照明能量变化的输出信号的变化。

7. 发明授权

US07679159B2 Solid state imaging device and solid state imaging element 有权
标题翻译：固态成像装置和固态成像元件
公开(公告)号：US07679159B2
公开(公告)日：2010-03-16
申请号：US11444312
申请日：2006-06-01
申请人： Hiromichi Tanaka , Hideto Yoshimura , Sumio Terakawa , Masafumi Kimata
发明人： Hiromichi Tanaka , Hideto Yoshimura , Sumio Terakawa , Masafumi Kimata
IPC分类号： H01L31/00
CPC分类号： H01L27/14645
摘要： Each of three light receiving sections has a P-type well having a P+-type layer and an N-type layer formed therein. The P+-type layer is diffused from substrate surface to depth d1. A PN junction forming portion of the N-type layer is diffused from depth d1 to depth d2 which is greater than depth d1 so as to form, with the P-type well, a PN junction of a photodiode at depth d2. Depths d1 as well as depths d2 of the three light receiving sections are different from each other. The N-type layer has a charge output portion which is diffused from the PN junction to the substrate surface, and which is coupled by circuit coupling to a MOS transistor for reading out charge. This allows each light receiving section to have spectral characteristics, thereby providing a solid state imaging element and a solid state imaging device without using color filters.
摘要翻译：三个光接收部分中的每一个具有P型阱，其中形成有P +型层和N型层。 P +型层从衬底表面扩散到深度d1。 N型层的PN结形成部分从深度d1扩散到深度d2，深度d1大于深度d1，以便与P型阱形成深度为d2的光电二极管的PN结。三个光接收部的深度d1以及深度d2彼此不同。 N型层具有从PN结扩散到衬底表面的电荷输出部分，其通过电路耦合耦合到用于读出电荷的MOS晶体管。这允许每个光接收部分具有光谱特性，从而提供固态成像元件和固态成像器件而不使用滤色器。

8. 发明申请

US20060273361A1 Solid state imaging device and solid state imaging element 有权
标题翻译：固态成像装置和固态成像元件
公开(公告)号：US20060273361A1
公开(公告)日：2006-12-07
申请号：US11444312
申请日：2006-06-01
申请人： Hiromichi Tanaka , Hideto Yoshimura , Sumio Terakawa , Masafumi Kimata
发明人： Hiromichi Tanaka , Hideto Yoshimura , Sumio Terakawa , Masafumi Kimata
IPC分类号： H01L31/113
CPC分类号： H01L27/14645
摘要： Each of three light receiving sections has a P-type well having a P+-type layer and an N-type layer formed therein. The P+-type layer is diffused from substrate surface to depth d1. A PN junction forming portion of the N-type layer is diffused from depth d1 to depth d2 which is greater than depth d1 so as to form, with the P-type well, a PN junction of a photodiode at depth d2. Depths d1 as well as depths d2 of the three light receiving sections are different from each other. The N-type layer has a charge output portion which is diffused from the PN junction to the substrate surface, and which is coupled by circuit coupling to a MOS transistor for reading out charge. This allows each light receiving section to have spectral characteristics, thereby providing a solid state imaging element and a solid state imaging device without using color filters.
摘要翻译：三个光接收部分中的每一个都具有P型阱，其具有P + +型层和形成在其中的N型层。 P + H +型层从衬底表面扩散到深度d 1.N型层的PN结形成部分从深度d 1扩散到深度d 2，深度d 2大于深度d 以便与P型阱形成深度为d 2的光电二极管的PN结。三个光接收部分的深度d 1以及深度d 2彼此不同。 N型层具有从PN结扩散到衬底表面的电荷输出部分，其通过电路耦合耦合到用于读出电荷的MOS晶体管。这允许每个光接收部分具有光谱特性，从而提供固态成像元件和固态成像器件而不使用滤色器。

9. 发明申请

US20090041358A1 Information storage apparatus and travel environment information recognition apparatus 审中-公开
标题翻译：信息存储装置和旅行环境信息识别装置
公开(公告)号：US20090041358A1
公开(公告)日：2009-02-12
申请号：US12221931
申请日：2008-08-07
申请人： Hiromichi Tanaka , Minoru Okada
发明人： Hiromichi Tanaka , Minoru Okada
IPC分类号： G06K9/46
CPC分类号： G01C21/32
摘要： An information storage apparatus recognizes a traffic sign on a road expressed by a road surface image, and stores recognized traffic sign in association with its position information in a hard disk drive. By recognizing and storing information on the traffic sign in combination with the position information for the sake of traffic safety, information coverage in terms of traffic safety is updated to the most up-to-date condition for roads in the entire country.
摘要翻译：信息存储装置识别由路面图像表示的道路上的交通标志，并且将识别的交通标志与其位置信息相关联地存储在硬盘驱动器中。为了交通安全，结合位置信息识别和存储交通信号信息，将交通安全方面的信息覆盖更新为全国道路的最新状态。

10. 发明授权

US07304104B2 Cement admixture, cement composition and method for laying work the same, and method for producing cement hardened product 失效
标题翻译：水泥外加剂，水泥组合物和铺设工序的方法以及生产水泥硬化产品的方法
公开(公告)号：US07304104B2
公开(公告)日：2007-12-04
申请号：US10791729
申请日：2004-03-04
申请人： Akihiko Yamashita , Hiromichi Tanaka , Toru Uno , Yoshiyuki Onda , Tsuyoshi Hirata
发明人： Akihiko Yamashita , Hiromichi Tanaka , Toru Uno , Yoshiyuki Onda , Tsuyoshi Hirata
IPC分类号： C04B24/26 , C08K5/06
CPC分类号： C08F290/142 , C04B28/02 , C04B40/0039 , C04B2103/32 , C08F283/06 , C08F283/065 , C08F290/14 , C08L71/02 , Y10T24/1303 , Y10T24/3493 , Y10T24/3495 , C04B24/06 , C04B24/22 , C04B24/267 , C04B24/32 , C04B24/38 , C04B2103/12 , C08F222/06 , C08L2666/04
摘要： The cement admixture of the present invention can provide viscosity decreasing ability as well as a high dispersing ability and slump loss preventing ability even in a high water reducing ratio range. The above-mentioned cement admixture comprises three components of a copolymer (A) containing a constituent unit (I) derived from the unsaturated (poly)alkylene glycol ether monomer (a) and a constituent unit (II) derived from a maleic acid monomer (b), a specific unsaturated (poly)alkylene glycol ether monomer (a) and a non-polymerizable (poly)alkylene glycol (B) having no alkenyl group.
摘要翻译：本发明的水泥混合物即使在高的减水率范围内也能够提供粘度降低能力以及高的分散能力和坍落度损失防止能力。上述水泥混合物包含含有源自不饱和（聚）亚烷基二醇醚单体（a）的构成单元（I）和源自马来酸单体的构成单元（II）的共聚物（A）的三种组分 b），不饱和（聚）亚烷基二醇醚单体（a）和不具有烯基的不可聚合（聚）亚烷基二醇（B）。

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