会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 7. 发明授权
    • Semiconductor storage device having a capacitor electrode formed of at least a platinum-rhodium oxide
    • 具有由至少一种铂 - 氧化铑形成的电容器电极的半导体存储装置
    • US06180974B2
    • 2001-01-30
    • US08986333
    • 1997-12-05
    • Akira OkutohMasaya NagataShun MitaraiYasuyuki Itoh
    • Akira OkutohMasaya NagataShun MitaraiYasuyuki Itoh
    • H01L27108
    • H01L28/60H01L28/55
    • In a semiconductor storage device in a stack structure wherein a capacitor section having an upper electrode, a dielectric layer, and a lower electrode is connected with a transistor section by a plug, the lower electrode is formed in contact with the plug. The lower electrode is formed of at least an oxide of a platinum-rhodium alloy. In addition to the oxide of a platinum-rhodium alloy, platinum and/or a platinum-rhodium alloy can be used as materials for forming the lower electrode. The plug is formed of polysilicon or tungsten. When the plug is formed of polysilicon, the lower electrode is formed by sequentially laminating, for example, a film of the oxide of the platinum-rhodium alloy, a film of the platinum-rhodium alloy, and a film of the oxide of the platinum-rhodium alloy on the plug.
    • 在具有上电极,电介质层和下电极的电容器部分通过插头与晶体管部分连接的堆叠结构的半导体存储器件中,下电极形成为与插头接触。 下电极由至少一种铂 - 铑合金的氧化物形成。 除了铂 - 铑合金的氧化物之外,可以使用铂和/或铂 - 铑合金作为形成下电极的材料。 插头由多晶硅或钨制成。 当插塞由多晶硅形成时,下电极通过依次层压例如铂 - 铑合金的氧化物的膜,铂 - 铑合金的膜和铂的氧化物的膜 - 铑合金在插头上。
    • 9. 发明授权
    • Semiconductor device, fabrication process, and electronic device
    • 半导体器件,制造工艺和电子器件
    • US08736027B2
    • 2014-05-27
    • US13412256
    • 2012-03-05
    • Masaya Nagata
    • Masaya Nagata
    • H01L31/0232
    • H01L23/49827H01L21/76898H01L23/49866H01L27/14618H01L27/14683H01L2924/0002H01L2924/00
    • A semiconductor device includes: a semiconductor substrate that includes a semiconductor; an electrode layer formed on a first surface side inside the semiconductor substrate; a frame layer laminated on the first surface of the semiconductor substrate; a conductor layer formed in an aperture portion formed by processing the semiconductor substrate and the frame layer in such a manner as to expose the electrode layer on the first surface of the semiconductor substrate; a vertical hole formed through the semiconductor substrate from a second surface of the semiconductor substrate to the conductor layer; and a wiring layer that is electrically connected to the electrode layer via the conductor layer at an end portion of the vertical hole, and that extends to the second surface of the semiconductor substrate.
    • 半导体器件包括:半导体衬底,其包括半导体; 形成在半导体衬底内的第一表面侧的电极层; 层叠在所述半导体衬底的第一表面上的框架层; 形成在通过以半导体衬底的第一表面露出电极层的方式处理半导体衬底和框架层而形成的开口部中的导体层; 从半导体衬底的第二表面到导体层的半导体衬底形成的垂直孔; 以及布线层,其在垂直孔的端部经由导体层电连接到电极层,并且延伸到半导体衬底的第二表面。