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    • 5. 发明申请
    • ELECTROPHOTOGRAPHIC IMAGE RECEIVING SHEET AND IMAGE FORMING METHOD USING THE SAME
    • 电子摄影图像接收片和使用该图像的图像形成方法
    • US20100129747A1
    • 2010-05-27
    • US12594872
    • 2008-04-08
    • Ashita MuraiShinji FujimotoYasutomo GotoYoshio Tani
    • Ashita MuraiShinji FujimotoYasutomo GotoYoshio Tani
    • G03G13/20G03G7/00
    • G03G7/0046Y10T428/31786
    • The present invention provides an electrophotographic image receiving sheet including a support, and at least two toner image receiving layers formed over at least one surface of the support, wherein a mixture mass ratio M of a crystalline polymer and an amorphous polymer in each of the toner image receiving layers is defined as [A/(A+B)], where A represents a mass of the crystalline polymer (g), and B represents a mass of the amorphous polymer (g), and a mixture mass ratio M1 of the outermost toner image receiving layer which is located farthest from the support, and a mixture mass ratio M2 of the highest inner toner image receiving layer, which has the highest mixture mass ratio among the inner toner image receiving layers located under the outermost toner image receiving layer, satisfy the relation: M1
    • 本发明提供了一种电子照相图像接收片,其包括支撑体和至少两个形成在支撑体的至少一个表面上的调色剂图像接收层,其中每个调色剂中的结晶聚合物和无定形聚合物的混合质量比M 图像接收层被定义为[A /(A + B)],其中A表示结晶聚合物(g)的质量,B表示无定形聚合物的质量(g),并且 位于离支撑体最远的最外面的调色剂图像接收层和最高内部调色剂图像接收层的混合质量比M2在位于最外侧调色剂图像接收层之下的内部调色剂图像接收层之间具有最高的混合质量比 满足关系:M1
    • 10. 发明申请
    • Manufacture of semiconductor device with good contact holes
    • 制造具有良好接触孔的半导体器件
    • US20060211238A1
    • 2006-09-21
    • US11373999
    • 2006-03-14
    • Shinji Fujimoto
    • Shinji Fujimoto
    • H01L21/4763H01L21/302H01L21/461
    • H01L21/76802H01L21/31116H01L21/76834
    • A wiring layer having an antireflection film of TiN or the like is formed on an insulating film covering a principal surface of a semiconductor substrate, and thereafter an interlayer insulating film including first to third insulating films is formed covering the wiring layer. The first and third insulating films are silicon oxide films formed by PE CVD or the like, and the second insulating film is a coated insulating film of inorganic or organic SOG. A contact hole is formed through the interlayer insulating film in a region corresponding to a partial surface area of the wiring layer, by dry etching using a resist layer as a mask. The coated insulating film, which is likely to be subjected to side etching, is etched under a highly depositive condition not containing N2, and thereafter the lower insulating film is etched under a lowly depositive condition containing N2.
    • 在覆盖半导体衬底的主表面的绝缘膜上形成具有TiN等的抗反射膜的布线层,然后形成覆盖该布线层的包含第一至第三绝缘膜的层间绝缘膜。 第一和第三绝缘膜是通过PE CVD等形成的氧化硅膜,第二绝缘膜是无机或有机SOG的涂覆绝缘膜。 通过使用抗蚀剂层作为掩模的干蚀刻,通过层间绝缘膜在与布线层的部分表面区域对应的区域中形成接触孔。 可能进行侧面蚀刻的被覆绝缘膜在不含N 2 N的高度沉积条件下进行蚀刻,然后在低沉积条件下对含有N < SUB> 2