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    • 1. 发明申请
    • Method for Production of Optically Active 3-Amino-Nitrogenated Compound
    • 光学活性3-氨基氮化合物的制备方法
    • US20090326246A1
    • 2009-12-31
    • US12375141
    • 2007-07-23
    • Masatoshi OhnukiMasashi IzumidaAkira NishiyamaShingo Matsumoto
    • Masatoshi OhnukiMasashi IzumidaAkira NishiyamaShingo Matsumoto
    • C07D207/04
    • C07D207/14C07D207/10C07D207/12C07D207/27
    • Aiming at production of an optically active 3-amino nitrogen-containing compound which is useful as an intermediate in synthesis of medicines and pesticides, in particular, an optically active 1-protected-3-aminopyrrolidine derivative, from an inexpensive and readily available raw material by a process which is efficient and can be practiced industrially, an optically active 3-amino nitrogen-containing compound is produced by performing a reaction of an optically active 3-substituted nitrogen-containing compound with ammonia, methylamine, ethylamine or dimethylamine in the presence of water. In addition, a 1-protected-3-aminopyrrolidine derivative is produced by performing a reaction of an optically active 1-protected-3-(sulfonyloxy)pyrrolidine derivative with ammonia, methylamine, ethylamine, or dimethylamine in the presence of methanol, ethanol, n-propanol, or isopropanol under a pressure of less than 30 barr.
    • 本发明涉及一种光学活性3-氨基含氮化合物的制备,其可用作药物和农药合成中的中间体,特别是光学活性的1-保护的3-氨基吡咯烷衍生物,由廉价且容易获得的原料 通过工业上有效且可以在工业上实践的方法,通过在存在下进行光学活性的3-取代的含氮化合物与氨,甲胺,乙胺或二甲胺的反应来制备光学活性的3-氨基含氮化合物 的水。 此外,通过在甲醇,乙醇,甲醇,乙醇等的存在下进行光学活性的1-保护的3-(磺酰氧基)吡咯烷衍生物与氨,甲胺,乙胺或二甲胺的反应来制备1-保护的3-氨基吡咯烷衍生物, 正丙醇或异丙醇,压力小于30巴。
    • 2. 发明授权
    • Process for producing optically active 3-amino nitrogen-containing compounds
    • 光学活性3-氨基含氮化合物的制备方法
    • US08030501B2
    • 2011-10-04
    • US12375141
    • 2007-07-23
    • Masatoshi OhnukiMasashi IzumidaAkira NishiyamaShingo Matsumoto
    • Masatoshi OhnukiMasashi IzumidaAkira NishiyamaShingo Matsumoto
    • C07D295/00
    • C07D207/14C07D207/10C07D207/12C07D207/27
    • Aiming at production of an optically active 3-amino nitrogen-containing compound which is useful as an intermediate in synthesis of medicines and pesticides, in particular, an optically active 1-protected-3-aminopyrrolidine derivative, from an inexpensive and readily available raw material by a process which is efficient and can be practiced industrially, an optically active 3-amino nitrogen-containing compound is produced by performing a reaction of an optically active 3-substituted nitrogen-containing compound with ammonia, methylamine, ethylamine or dimethylamine in the presence of water. In addition, a 1-protected-3-aminopyrrolidine derivative is produced by performing a reaction of an optically active 1-protected-3-(sulfonyloxy)pyrrolidine derivative with ammonia, methylamine, ethylamine, or dimethylamine in the presence of methanol, ethanol, n-propanol, or isopropanol under a pressure of less than 30 barr.
    • 本发明涉及一种光学活性3-氨基含氮化合物的制备,其可用作药物和农药合成中的中间体,特别是光学活性的1-保护的3-氨基吡咯烷衍生物,由廉价且容易获得的原料 通过工业上有效且可以在工业上实践的方法,通过在存在下进行光学活性的3-取代的含氮化合物与氨,甲胺,乙胺或二甲胺的反应来制备光学活性的3-氨基含氮化合物 的水。 此外,通过在甲醇,乙醇,甲醇,乙醇等的存在下进行光学活性的1-保护的3-(磺酰氧基)吡咯烷衍生物与氨,甲胺,乙胺或二甲胺的反应来制备1-保护的3-氨基吡咯烷衍生物, 正丙醇或异丙醇,压力小于30巴。
    • 3. 发明申请
    • METHOD FOR PRODUCING OPTICALLY ACTIVE 2-ARYLPIPERAZINE DERIVATIVE
    • 用于生产光学活性2-亚氨基吡啶衍生物的方法
    • US20100087643A1
    • 2010-04-08
    • US12449460
    • 2008-02-05
    • Masatoshi OhnukiAkira NishiyamaMasaru Mitsuda
    • Masatoshi OhnukiAkira NishiyamaMasaru Mitsuda
    • C07D241/04
    • C07B53/00C07D241/04
    • The objective of the present invention is to produce an optically active 2-arylpiperazine derivative useful as a synthetic intermediate for pharmaceutical products and agricultural chemicals from inexpensive and readily available starting material by an industrially practicable method. The objective can be accomplished by treating an optically active substituted aminodiol derivative produced from an optically active styrene oxide derivative with a sulfonating agent in the presence of a base, and then reacting an amine compound to obtain the 2-arylpiperazine derivative. Especially, an optically active 1-unsubstituted-2-arylpiperazine derivative can be produced by treating an optically active 1-allyl-2-arylpiperazine derivative with water in the presence of a transition metal catalyst for deallylation.
    • 本发明的目的是通过工业上可行的方法从便宜且容易获得的原料制备用作药物产品和农药的合成中间体的光学活性2-芳基哌嗪衍生物。 该目的可以通过在碱的存在下用磺化剂处理由光学活性苯乙烯氧化物衍生物产生的光学活性取代的氨基二醇衍生物,然后使胺化合物反应得到2-芳基哌嗪衍生物来实现。 特别地,光学活性的1-未取代-2-芳基哌嗪衍生物可以通过在过渡金属催化剂的存在下用水处理光学活性的1-烯丙基-2-芳基哌嗪衍生物来进行脱气。
    • 4. 发明授权
    • Method for producing optically active 2-arylpiperazine derivative
    • 光学活性2-芳基哌嗪衍生物的制备方法
    • US08273883B2
    • 2012-09-25
    • US12449460
    • 2008-02-05
    • Masatoshi OhnukiAkira NishiyamaMasaru Mitsuda
    • Masatoshi OhnukiAkira NishiyamaMasaru Mitsuda
    • C07D241/04C07D295/00
    • C07B53/00C07D241/04
    • The objective of the present invention is to produce an optically active 2-arylpiperazine derivative useful as a synthetic intermediate for pharmaceutical products and agricultural chemicals from inexpensive and readily available starting material by an industrially practicable method. The objective can be accomplished by treating an optically active substituted aminodiol derivative produced from an optically active styrene oxide derivative with a sulfonating agent in the presence of a base, and then reacting an amine compound to obtain the 2-arylpiperazine derivative. Especially, an optically active 1-unsubstituted-2-arylpiperazine derivative can be produced by treating an optically active 1-allyl-2-arylpiperazine derivative with water in the presence of a transition metal catalyst for deallylation.
    • 本发明的目的是通过工业上可行的方法从便宜且容易获得的原料制备用作药物产品和农药的合成中间体的光学活性2-芳基哌嗪衍生物。 该目的可以通过在碱的存在下用磺化剂处理由光学活性苯乙烯氧化物衍生物产生的光学活性取代的氨基二醇衍生物,然后使胺化合物反应得到2-芳基哌嗪衍生物来实现。 特别地,光学活性的1-未取代-2-芳基哌嗪衍生物可以通过在过渡金属催化剂的存在下用水处理光学活性的1-烯丙基-2-芳基哌嗪衍生物来进行脱气。
    • 8. 发明申请
    • NONVOLATILE SEMICONDUCTOR MEMORY APPARATUS
    • 非易失性半导体存储器件
    • US20100052035A1
    • 2010-03-04
    • US12403493
    • 2009-03-13
    • Masahiro KOIKEYuichiro MitaniTatsuo ShimizuNaoki YasudaYasushi NakasakiAkira Nishiyama
    • Masahiro KOIKEYuichiro MitaniTatsuo ShimizuNaoki YasudaYasushi NakasakiAkira Nishiyama
    • H01L29/788H01L29/792
    • H01L29/7881H01L21/28273H01L21/28282H01L27/11521H01L29/513
    • A nonvolatile semiconductor memory apparatus includes: a source and drain regions formed at a distance from each other in a semiconductor layer; a first insulating film formed on the semiconductor layer located between the source region and the drain region, the first insulating film including a first insulating layer and a second insulating layer formed on the first insulating layer and having a higher dielectric constant than the first insulating layer, the second insulating layer having a first site performing hole trapping and releasing, the first site being formed by adding an element different from a base material to the second insulating film, the first site being located at a lower level than a Fermi level of a material forming the semiconductor layer; a charge storage film formed on the first insulating film; a second insulating film formed on the charge storage film; and a control gate electrode formed on the second insulating film.
    • 一种非易失性半导体存储器件,包括:在半导体层中形成为彼此间隔一定距离的源区和漏区; 形成在位于源极区域和漏极区域之间的半导体层上的第一绝缘膜,所述第一绝缘膜包括形成在所述第一绝缘层上并具有比所述第一绝缘层高的介电常数的第一绝缘层和第二绝缘层 所述第二绝缘层具有进行孔捕获和释放的第一部位,所述第一部位通过将不同于基材的元素添加到所述第二绝缘膜而形成,所述第一部位位于比所述第二绝缘膜的费米能级更低的水平 形成半导体层的材料; 形成在所述第一绝缘膜上的电荷存储膜; 形成在电荷存储膜上的第二绝缘膜; 以及形成在所述第二绝缘膜上的控制栅电极。
    • 9. 发明授权
    • Cooling apparatus and projection type display device
    • 冷却装置和投影式显示装置
    • US07606640B2
    • 2009-10-20
    • US11290937
    • 2005-11-30
    • Koji HiraiYoshitake KondoAkira Nishiyama
    • Koji HiraiYoshitake KondoAkira Nishiyama
    • G06F19/00
    • G03B21/16
    • A cooling apparatus able to rotate cooling fans with required lowest limit speeds, and able to suppress power consumption and generated noise includes a cooling unit for cooling an object to be cooled by a cooling amount in accordance with a level of a supplied drive signal; a temperature detector for detecting the temperature of the object; a drive circuit for amplifying the drive signal and supplying an output signal to the cooling unit; a memory for storing correction data for correcting circuit error in the drive circuit; and a control unit for generating the drive signal based on the detected temperature of the object, correcting error in the output signal of the drive circuit based on the correction data stored in the memory, and outputting the generated drive signal to the drive circuit. The cooling apparatus may be used in a projection type display device.
    • 能够以所需的最低限制速度旋转冷却风扇并且能够抑制功率消耗和产生的噪声的冷却装置包括:冷却单元,用于根据提供的驱动信号的电平冷却要冷却的物体的冷却量; 温度检测器,用于检测物体的温度; 驱动电路,用于放大驱动信号并向冷却单元提供输出信号; 用于存储用于校正驱动电路中的电路错误的校正数据的存储器; 以及控制单元,用于根据检测到的物体的温度产生驱动信号,根据存储在存储器中的校正数据校正驱动电路的输出信号中的误差,并将所生成的驱动信号输出到驱动电路。 冷却装置可以用在投影型显示装置中。
    • 10. 发明授权
    • Semiconductor device
    • 半导体器件
    • US07576397B2
    • 2009-08-18
    • US11841757
    • 2007-08-20
    • Reika IchiharaYoshinori TsuchiyaMasato KoyamaAkira Nishiyama
    • Reika IchiharaYoshinori TsuchiyaMasato KoyamaAkira Nishiyama
    • H01L27/092
    • H01L21/823857H01L21/823462
    • A semiconductor device includes a semiconductor substrate, an nMISFET formed on the substrate, the nMISFET including a first dielectric formed on the substrate and a first metal gate electrode formed on the first dielectric and formed of one metal element selected from Ti, Zr, Hf, Ta, Sc, Y, a lanthanoide and actinide series and of one selected from boride, silicide and germanide compounds of the one metal element, and a pMISFET formed on the substrate, the pMISFET including a second dielectric formed on the substrate and a second metal gate electrode formed on the second dielectric and made of the same material as that of the first metal gate electrode, at least a portion of the second dielectric facing the second metal gate electrode being made of an insulating material different from that of at least a portion of the first dielectric facing the first metal gate electrode.
    • 半导体器件包括半导体衬底,形成在衬底上的nMISFET,nMISFET包括形成在衬底上的第一电介质和形成在第一电介质上的第一金属栅极,并由选自Ti,Zr,Hf, Ta,Sc,Y,镧系元素和锕系和选自所述一种金属元素的硼化物,硅化物和锗化合物的一种,以及形成在所述衬底上的pMISFET,所述pMISFET包括形成在所述衬底上的第二电介质和第二金属 栅电极形成在第二电介质上并由与第一金属栅电极相同的材料制成,第二电介质面向第二金属栅电极的至少一部分由绝缘材料制成,绝缘材料与至少一部分 的第一电介质面向第一金属栅电极。