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    • 7. 发明授权
    • Monitoring circuit, method for outputting monitor signal, and optical receiver
    • 监控电路,监控信号输出方法,光接收机
    • US08476894B2
    • 2013-07-02
    • US12801051
    • 2010-05-19
    • Hiroshi Okada
    • Hiroshi Okada
    • G01R31/00
    • G01R19/0092
    • A monitoring circuit of the present invention provides a monitor signal with which a magnitude of a current flowing across a photodetector, such as a photodiode, can be calculated accurately over a wide temperature range on the basis of a value of the monitor signal. The monitoring circuit of the present invention includes: a current mirror circuit for outputting a monitor current proportional to an input current, the current mirror circuit having an input point for receiving the input current, the input point being connected to a photodetector and a load resistor, which are connected thereto in parallel; and an output circuit for outputting a monitor signal indicating a difference between a monitor electric potential proportional to the monitor current, and an offset electric potential proportional to an offset current which flows across the load resistor concurrently with the monitor current.
    • 本发明的监视电路提供一种监视信号,通过该监视信号,可以根据监视信号的值,在宽的温度范围内精确地计算流过光电探测器(例如光电二极管)的电流大小。 本发明的监视电路包括:电流镜电路,用于输出与输入电流成比例的监视电流,电流镜电路具有用于接收输入电流的输入点,输入点连接到光电检测器和负载电阻器 ,其并联连接; 以及输出电路,用于输出指示与监视电流成比例的监视电位之间的差异的监视信号和与监视电流同时流过负载电阻的偏移电流成比例的偏移电位。
    • 9. 发明授权
    • Light-receiving device
    • 光接收装置
    • US08058642B2
    • 2011-11-15
    • US12443575
    • 2008-07-18
    • Yasuhiro IguchiHiroshi OkadaYuichi Kawamura
    • Yasuhiro IguchiHiroshi OkadaYuichi Kawamura
    • H01L31/0352
    • H01L31/035236B82Y20/00H01L27/14649H01L31/03046Y02E10/544
    • A light-receiving element device capable of receiving near infrared to mid-infrared light of 1.7 μm-3.5 μm is provided. A substrate is formed of InP, and a superlattice light-receiving layer is formed of a superlattice of a type 2 junction formed by alternately being stacked a falling layer of a Group III-V compound semiconductor including In, Ga, As, N and a rising layer of a Group III-V compound semiconductor including Ga, As, Sb. The film thickness of the falling layer and the rising layer is each 3 nm-10 nm. The entire thickness of the superlattice light-receiving layer is 2 μm-7 μm. The lattice mismatch of the constituent film of the superlattice light-receiving layer to InP is ±0.2% or less.
    • 提供能够接收1.7μm〜3.5μm的近红外到中红外光的受光元件装置。 基板由InP形成,超晶格光接收层由通过交替堆叠包括In,Ga,As,N的III-V族化合物半导体的下降层形成的2型结的超晶格形成,并且 包含Ga,As,Sb的III-V族化合物半导体的上升层。 下降层和上升层的膜厚分别为3nm〜10nm。 超晶格光接收层的整个厚度为2μm-7μm。 超晶格光接收层的构成膜与InP的晶格失配为±0.2%以下。