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1. 发明申请

US20140038055A1 ELECTRODE BODY, METHOD FOR PRODUCING ELECTRODE BODY, AND BATTERY PROVIDED WITH ELECTRODE BODY 有权
标题翻译：电极体，电极体的制造方法以及电极体提供的电池
公开(公告)号：US20140038055A1
公开(公告)日：2014-02-06
申请号：US13956608
申请日：2013-08-01
申请人： Masato HOZUMI , Toshiya SAITO , Hideto YAMADA , Tohru SUZUKI , Tetsuo UCHIKOSHI , Yoshio SAKKA
发明人： Masato HOZUMI , Toshiya SAITO , Hideto YAMADA , Tohru SUZUKI , Tetsuo UCHIKOSHI , Yoshio SAKKA
IPC分类号： H01M4/04
CPC分类号： H01M4/0402 , H01M4/0485 , H01M4/131 , H01M4/1391 , H01M10/052 , Y02E60/122
摘要： In a (001) pole figure of the active material particles, where a plane parallel to the substrate is defined as the equatorial plane, a Lotgering factor fa(001) of an A plane and a Lotgering factor fh(001) of a B plane satisfy both Expressions (1) and (2) below, the A plane being an equatorial cross section perpendicular to a line that connects the center of the (001) pole figure and a first point of maximum XRD intensity of peaks attributed to (001) planes at the outer periphery of the equatorial plane, the B plane being an equatorial cross section perpendicular to a line that connects the center of the (001) pole figure and a second point of minimum XRD intensity of peaks attributed to the (001) planes at the outer periphery of the equatorial plane: fa(001)>0.3 Expression (1) fa(001)−fb(001)
摘要翻译：在活性物质粒子的（001）极图中，平行于基底的平面被定义为赤道平面，A平面的浮雕因子fa（001）和B平面的折差因子fh（001）满足下面的表达式（1）和（2），A平面是垂直于连接（001）极点的中心的线的赤道横截面和归因于（001）极点的峰的最大XRD强度的第一点，平面在赤道平面的外周，B平面是垂直于连接（001）极图的中心的线的赤道横截面和归因于（001）平面的峰的最小XRD强度的第二点在赤道平面的外周：fa（001）> 0.3表达式（1）fa（001）-fb（001）<1.0表达式（2）。

2. 发明申请

US20110195310A1 PRODUCTION METHOD FOR ELECTRODE FOR BATTERY, ELECTRODE PRODUCED BY PRODUCTION METHOD, AND BATTERY INCLUDING ELECTRODE 有权
标题翻译：用于电池电极的生产方法，通过生产方法生产的电极和包括电极的电池
公开(公告)号：US20110195310A1
公开(公告)日：2011-08-11
申请号：US13020257
申请日：2011-02-03
申请人： Koji KAWAMOTO , Masato HOZUMI , Yoshio SAKKA , Tetsuo UCHIKOSHI , Tohru SUZUKI , Hideto YAMADA
发明人： Koji KAWAMOTO , Masato HOZUMI , Yoshio SAKKA , Tetsuo UCHIKOSHI , Tohru SUZUKI , Hideto YAMADA
IPC分类号： H01M4/52 , H01M4/26
CPC分类号： H01M10/052 , H01M4/131 , H01M4/1391 , H01M4/525 , Y10T29/49115
摘要： A production method for an electrode for a battery includes preparing a conductive substrate, and electrode material particles having ion conduction anisotropy; and producing an electrode by attaching the electrode material particles onto the conductive substrate, and applying a magnetic field in a predetermined direction.
摘要翻译：电池用电极的制造方法包括：制备导电性基板和具有离子传导各向异性的电极材料粒子; 以及通过将电极材料颗粒附着在导电基板上并沿预定方向施加磁场来制造电极。

3. 发明申请

US20110058393A1 SWITCHING POWER SUPPLY DEVICE 审中-公开
标题翻译：切换电源设备
公开(公告)号：US20110058393A1
公开(公告)日：2011-03-10
申请号：US12870960
申请日：2010-08-30
申请人： Tohru SUZUKI
发明人： Tohru SUZUKI
IPC分类号： H02M3/335 , H03K17/687
CPC分类号： H02M1/34 , H02M3/335 , H02M2001/346 , H03K17/08142 , H03K2217/0072 , Y02B70/1433 , Y02B70/1491
摘要： A switching power supply device that uses a SJ-MISFIT reduces a surge in voltage caused by the oscillation of drain current.The switching power supply device of the present invention, which is switched by a switching element that is a MOSFET having a super junction structure, includes an oscillation reduction diode connected in anti-parallel to the switching element, wherein when a characteristic curve of output capacitance Coss of the switching element relative to a drain-to-source voltage VDS is approximated by a first line, second line and third line corresponding to lines A, B and C shown in FIG. 2, junction capacitance CD2 of the oscillation reduction diode at a point b where a characteristic curve of the junction capacitance CD2 of the oscillation reduction diode and the second line cross each other is 40% or more of the output capacitance Coss of the switching element at a point a where the first and second lines cross each other.
摘要翻译：使用SJ-MISFIT的开关电源装置减少由漏极电流的振荡引起的电压浪涌。由具有超结结构的MOSFET的开关元件切换的本发明的开关电源装置包括与开关元件反并联连接的振荡降低二极管，其中当输出电容的特性曲线开关元件相对于漏极 - 源极电压VDS的Coss由对应于图1所示的线A，B和C的第一线，第二线和第三线近似。如图2所示，振荡降低二极管的结电容CD2的特性曲线与第二线交叉的点b处的振荡降低二极管的结电容CD2为开关元件的输出电容Coss的40％以上第一和第二行交叉的点a。

4. 发明申请

US20120267748A1 SEMICONDUCTOR DEVICE INCLUDING SCHOTTKY BARRIER JUNCTION AND PN JUNCTION 审中-公开
标题翻译：半导体器件，其中包括肖特基阻挡结和PN结
公开(公告)号：US20120267748A1
公开(公告)日：2012-10-25
申请号：US13447389
申请日：2012-04-16
申请人： Tohru SUZUKI
发明人： Tohru SUZUKI
IPC分类号： H01L29/47
CPC分类号： H01L29/872 , H01L29/0619 , H01L29/0649 , H01L29/1608
摘要： A semiconductor device includes a first conductivity-type semiconductor stack including the recesses which extend from a first principal surface toward a second principal surface and have bottoms not reaching the second principal surface, the second conductivity-type anode regions which are embedded at a distance from one another in the first principal surface, each of which has a part of an outer edge region exposed to a side surface of the corresponding recess, an anode electrode which is provided on the first principal surface of the semiconductor stack to form a Schottky barrier junction with the semiconductor stack in a region where the plurality of anode regions are not formed and form ohmic junctions with the anode regions; and a cathode electrode provided on the second principal surface of the semiconductor stack.
摘要翻译：半导体器件包括：第一导电型半导体堆叠，其包括从第一主表面朝向第二主表面延伸的凹部，并且底部没有到达第二主表面，第二导电型阳极区域被嵌入距离第一主表面中的每一个具有暴露于相应凹部的侧表面的外边缘区域的一部分，阳极电极设置在半导体叠层的第一主表面上以形成肖特基势垒结其中所述半导体堆叠在所述多个阳极区域未形成的区域中，并与所述阳极区域形成欧姆结; 以及设置在半导体叠层的第二主表面上的阴极。

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