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1. 发明授权

US08153534B2 Direct oxidation method for semiconductor process 有权
标题翻译：半导体工艺的直接氧化法
公开(公告)号：US08153534B2
公开(公告)日：2012-04-10
申请号：US13025738
申请日：2011-02-11
申请人： Hisashi Inoue , Masataka Toiya , Yoshikatsu Mizuno
发明人： Hisashi Inoue , Masataka Toiya , Yoshikatsu Mizuno
IPC分类号： H01L21/31
CPC分类号： C23C8/10 , H01L21/02238 , H01L21/02255 , H01L21/31662 , H01L21/67109
摘要： An oxidation method for performing direct oxidation includes respectively supplying an oxidizing gas and a deoxidizing gas to the process field, and directly oxidizing a surface target substrates by use of oxygen radicals and hydroxyl group radicals generated by a reaction between the oxidizing gas and the deoxidizing gas. The oxidizing gas is supplied through an oxidizing gas nozzle extending over a vertical length corresponding to the process field and is spouted from a plurality of gas spouting holes formed on the oxidizing gas nozzle and arrayed over the vertical length corresponding to the process field. The deoxidizing gas is supplied through a plurality of deoxidizing gas nozzles having different heights respectively corresponding to a plurality of zones of the process field arrayed vertically and is spouted from gas spouting holes respectively formed on the deoxidizing gas nozzles each at height of a corresponding zone.
摘要翻译：用于进行直接氧化的氧化方法包括分别向工艺场提供氧化气体和脱氧气体，并且通过氧化气体和脱氧气体之间的反应产生的氧自由基和羟基自由基来直接氧化表面目标衬底。氧化气体通过在对应于处理场的垂直长度上延伸的氧化气体喷嘴供给，并且从形成在氧化气体喷嘴上的多个气体喷出孔喷出并排列在对应于过程场的垂直长度上。脱氧气体通过分别对应于垂直排列的处理场的多个区域的不同高度的多个脱氧气体喷嘴供给，并且从分别形成在对应区域的高度的脱氧气体喷嘴上的气体喷出孔喷出。

2. 发明申请

US20110129604A1 DIRECT OXIDATION METHOD FOR SEMICONDUCTOR PROCESS 有权
标题翻译：用于半导体工艺的直接氧化方法
公开(公告)号：US20110129604A1
公开(公告)日：2011-06-02
申请号：US13025738
申请日：2011-02-11
申请人： Hisashi Inoue , Masataka Toiya , Yoshikatsu Mizuno
发明人： Hisashi Inoue , Masataka Toiya , Yoshikatsu Mizuno
IPC分类号： C23C16/448 , C23C16/00 , C23C16/22
CPC分类号： C23C8/10 , H01L21/02238 , H01L21/02255 , H01L21/31662 , H01L21/67109
摘要： An oxidation method for performing direct oxidation includes respectively supplying an oxidizing gas and a deoxidizing gas to the process field, and directly oxidizing a surface target substrates by use of oxygen radicals and hydroxyl group radicals generated by a reaction between the oxidizing gas and the deoxidizing gas. The oxidizing gas is supplied through an oxidizing gas nozzle extending over a vertical length corresponding to the process field and is spouted from a plurality of gas spouting holes formed on the oxidizing gas nozzle and arrayed over the vertical length corresponding to the process field. The deoxidizing gas is supplied through a plurality of deoxidizing gas nozzles having different heights respectively corresponding to a plurality of zones of the process field arrayed vertically and is spouted from gas spouting holes respectively formed on the deoxidizing gas nozzles each at height of a corresponding zone.
摘要翻译：用于进行直接氧化的氧化方法包括分别向工艺场提供氧化气体和脱氧气体，并且通过氧化气体和脱氧气体之间的反应产生的氧自由基和羟基自由基来直接氧化表面目标衬底。氧化气体通过在对应于处理场的垂直长度上延伸的氧化气体喷嘴供给，并且从形成在氧化气体喷嘴上的多个气体喷出孔喷出并排列在对应于过程场的垂直长度上。脱氧气体通过分别对应于垂直排列的处理场的多个区域的不同高度的多个脱氧气体喷嘴供给，并且从分别形成在对应区域的高度的脱氧气体喷嘴上的气体喷出孔喷出。

3. 外观设计

USD594488S1 Process tube for manufacturing semiconductor wafers 有权
公开(公告)号：USD594488S1
公开(公告)日：2009-06-16
申请号：US29290024
申请日：2007-10-12
申请人： Masataka Toiya , Yoshikatsu Mizuno , Hisashi Inoue
设计人： Masataka Toiya , Yoshikatsu Mizuno , Hisashi Inoue

4. 发明申请

US20080075838A1 Oxidation apparatus and method for semiconductor process 审中-公开
标题翻译：半导体工艺的氧化装置及方法
公开(公告)号：US20080075838A1
公开(公告)日：2008-03-27
申请号：US11902180
申请日：2007-09-19
申请人： Hisashi Inoue , Masataka Toiya , Yoshikatsu Mizuno
发明人： Hisashi Inoue , Masataka Toiya , Yoshikatsu Mizuno
IPC分类号： C23C8/10
CPC分类号： C23C8/10 , H01L21/02238 , H01L21/02255 , H01L21/31662 , H01L21/67109
摘要： An oxidation apparatus for a semiconductor process includes a process container having a process field configured to accommodate target substrates at intervals vertically, a heater configured to heat the process field; an exhaust system configured to exhaust gas from inside the process field; an oxidizing gas supply circuit configured to supply an oxidizing gas to the process field; and a deoxidizing gas supply circuit configured to supply a deoxidizing gas to the process field. The oxidizing gas supply circuit includes an oxidizing gas nozzle extending over a vertical length corresponding to the process field, and having gas spouting holes arrayed over the vertical length corresponding to the process field. The deoxidizing gas supply circuit includes deoxidizing gas nozzles having different heights respectively corresponding to zones of the process field arrayed vertically, and each having a gas spouting hole formed at height of a corresponding zone.
摘要翻译：一种用于半导体工艺的氧化设备包括一个处理容器，该过程容器具有被配置为在垂直方向上间隔地容纳目标衬底的过程区域，被配置为加热过程场的加热器; 排气系统，其构造成从所述过程区域内部排出废气; 氧化气体供给回路，其构成为向所述处理场供给氧化气体; 以及脱气气体供给回路，被配置为向所述处理区域供给脱氧气体。氧化气体供给回路包括在对应于过程场的垂直长度上延伸的氧化气体喷嘴，并且具有排列在对应于过程场的垂直长度上的气体喷射孔。脱氧气体供给回路包括对应于垂直排列的处理场的区域分别具有不同高度的脱氧气体喷嘴，并且各自具有形成在相应区域的高度处的气体喷射孔。

5. 发明授权

US4750247A Apparatus for manufacturing a fiber reinforcement body 失效
标题翻译：纤维增强体的制造装置
公开(公告)号：US4750247A
公开(公告)日：1988-06-14
申请号：US018621
申请日：1987-02-25
申请人： Meiji Anahara , Yoshikatsu Mizuno , Mitsutoshi Hirano , Fukuo Gomi
发明人： Meiji Anahara , Yoshikatsu Mizuno , Mitsutoshi Hirano , Fukuo Gomi
IPC分类号： B22D18/02 , B22D19/14 , B65H81/00 , C22C47/08 , F16C7/00 , B23P21/00 , B21F3/00
CPC分类号： F16C7/026 , B22D19/14 , Y10T29/5186 , Y10T29/5187 , Y10T74/2142 , Y10T74/2162
摘要： An apparatus for manufacturing a fiber reinforcement body which is to be incorporated into a metal matrix in a fabrication technique based on a molten metal infiltration process for producing a metal matrix composite material are disclosed herein. The apparatus of the invention comprises means for supporting the chill members in longitudinally spaced relation to each other, means for forming uniformly distributed windings of the yarn on each of the chills, and means for forming similar windings of the yarn around, and extending between the chills in a way so as to connect them together.
摘要翻译：本文公开了一种用于制造在基于用于制造金属基质复合材料的熔融金属渗透方法的制造技术中并入金属基质中的纤维增强体的装置。本发明的装置包括用于将冷却构件彼此纵向间隔开地支撑的装置，用于在每个寒冷部分上形成均匀分布的纱线绕组的装置，以及用于在纱线周围形成相似绕组的装置，寒冷的方式，以便将它们连接在一起。

6. 发明授权

US4671336A Method for manufacturing a fiber reinforcement body for a metal matrix composite 失效
标题翻译：金属基复合材料纤维增强体的制造方法
公开(公告)号：US4671336A
公开(公告)日：1987-06-09
申请号：US729297
申请日：1985-05-01
申请人： Meiji Anahara , Yoshikatsu Mizuno , Mitsutoshi Hirano , Fukuo Gomi
发明人： Meiji Anahara , Yoshikatsu Mizuno , Mitsutoshi Hirano , Fukuo Gomi
IPC分类号： B22D18/02 , B22D19/14 , B65H81/00 , C22C47/08 , F16C7/00
CPC分类号： F16C7/026 , B22D19/14 , Y10T29/5186 , Y10T29/5187 , Y10T74/2142 , Y10T74/2162
摘要： A method and an apparatus for manufacturing a fiber reinforcement body which is to be incorporated into a metal matrix in a fabrication technique based on a molten metal infiltration process for producing a metal matrix composite material are disclosed herein. The method according to the invention comprises preparing at least two metal insert chills each having the shape of a spool or reel, forming windings of a yarn of reinforcing fibers on each of the two chills, and forming windings of the yarn around, and extending between the two chill members so as to connect them together. The apparatus of the invention comprises means for supporting the chill members in longitudinally spaced relation to each other, means for forming uniformly distributed windings of the yarn on each of the chills, and means for forming similar windings of the yarn around, and extending between the chills in a way so as to connect them together.
摘要翻译：本文公开了一种用于制造在基于用于制备金属基质复合材料的熔融金属渗透方法的制造技术中并入金属基体中的纤维增强体的制造方法和装置。根据本发明的方法包括制备每个具有卷轴或卷轴形状的至少两个金属插入物冷冻，在两个寒冷中的每一个上形成增强纤维纱线的绕组，并且形成纱线的绕组，并在两个寒冷的成员，以连接在一起。本发明的装置包括用于将冷却构件彼此纵向间隔开地支撑的装置，用于在每个寒冷部分上形成均匀分布的纱线绕组的装置，以及用于在纱线周围形成相似绕组的装置，寒冷的方式，以便将它们连接在一起。

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