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1. 发明授权

US07295412B2 Protection circuit for power management semiconductor devices and power converter having the protection circuit 有权
标题翻译：具有保护电路的电源管理半导体器件和电力转换器保护电路
公开(公告)号：US07295412B2
公开(公告)日：2007-11-13
申请号：US10773283
申请日：2004-02-09
申请人： Masataka Sasaki , Katsumi Ishikawa , Ryuichi Saito , Koichi Suda , Katsuaki Takahashi
发明人： Masataka Sasaki , Katsumi Ishikawa , Ryuichi Saito , Koichi Suda , Katsuaki Takahashi
IPC分类号： H02H3/20 , H02H3/08 , H02H9/02
CPC分类号： B60W20/00 , B60K6/485 , B60L3/003 , B60W10/08 , H02H7/20 , H02M1/32 , H03K17/0828 , H03K17/168 , Y02T10/6226
摘要： A collector voltage of a power management semiconductor device is detected by a first comparator, and when the detected collector voltage exceeds a first reference voltage, the first comparator outputs a first detection signal. Furthermore, a gate voltage of the power management semiconductor device is detected by a second comparator, and when the detected gate voltage exceeds a second reference voltage, the second comparator outputs a second detection signal. The second reference voltage is a minimum gate voltage for feeding a rated power to the power management semiconductor device or over, and less than a line power voltage of a drive circuit of the power management semiconductor device. When both the first detection signal and second detection signal are being outputted, the gate voltage is reduced by a gate voltage reduction means so as to protect the power management semiconductor device from overcurrent and overvoltage.
摘要翻译：功率管理半导体器件的集电极电压由第一比较器检测，并且当检测到的集电极电压超过第一参考电压时，第一比较器输出第一检测信号。此外，由第二比较器检测功率管理半导体器件的栅极电压，并且当检测到的栅极电压超过第二参考电压时，第二比较器输出第二检测信号。第二参考电压是用于向功率管理半导体器件提供额定功率或超过功率管理半导体器件的驱动电路的线电源电压的最小栅极电压。当输出第一检测信号和第二检测信号两者时，通过栅极电压降低装置降低栅极电压，以保护功率管理半导体器件免于过电流和过电压。

2. 发明授权

US07675727B2 Protection circuit for power management semiconductor devices and power converter having the protection circuit 有权
标题翻译：具有保护电路的电源管理半导体器件和电力转换器保护电路
公开(公告)号：US07675727B2
公开(公告)日：2010-03-09
申请号：US11979874
申请日：2007-11-09
申请人： Masataka Sasaki , Katsumi Ishikawa , Ryuichi Saito , Koichi Suda , Katsuaki Takahashi
发明人： Masataka Sasaki , Katsumi Ishikawa , Ryuichi Saito , Koichi Suda , Katsuaki Takahashi
IPC分类号： H02H3/08 , H02H9/02
CPC分类号： B60W20/00 , B60K6/485 , B60L3/003 , B60W10/08 , H02H7/20 , H02M1/32 , H03K17/0828 , H03K17/168 , Y02T10/6226
摘要： A collector voltage of a power management semiconductor device is detected by a first comparator, and when the detected collector voltage exceeds a first reference voltage, the first comparator outputs a first detection signal. Furthermore, a gate voltage of the power management semiconductor device is detected by a second comparator, and when the detected gate voltage exceeds a second reference voltage, the second comparator outputs a second detection signal. The second reference voltage is a minimum gate voltage for feeding a rated power to the power management semiconductor device or over, and less than a line power voltage of a drive circuit of the power management semiconductor device. When both the first detection signal and second detection signal are being outputted, the gate voltage is reduced by a gate voltage reduction means so as to protect the power management semiconductor device from overcurrent and overvoltage.
摘要翻译：功率管理半导体器件的集电极电压由第一比较器检测，并且当检测到的集电极电压超过第一参考电压时，第一比较器输出第一检测信号。此外，由第二比较器检测功率管理半导体器件的栅极电压，并且当检测到的栅极电压超过第二参考电压时，第二比较器输出第二检测信号。第二参考电压是用于向功率管理半导体器件提供额定功率或超过功率管理半导体器件的驱动电路的线电源电压的最小栅极电压。当输出第一检测信号和第二检测信号两者时，通过栅极电压降低装置降低栅极电压，以保护功率管理半导体器件免于过电流和过电压。

3. 发明申请

US20080074819A1 Protection circuit for power management semiconductor devices and power converter having the protection circuit 有权
标题翻译：具有保护电路的电源管理半导体器件和电力转换器保护电路
公开(公告)号：US20080074819A1
公开(公告)日：2008-03-27
申请号：US11979874
申请日：2007-11-09
申请人： Masataka Sasaki , Katsumi Ishikawa , Ryuichi Saito , Koichi Suda , Katsuaki Takahashi
发明人： Masataka Sasaki , Katsumi Ishikawa , Ryuichi Saito , Koichi Suda , Katsuaki Takahashi
IPC分类号： H02H3/20
CPC分类号： B60W20/00 , B60K6/485 , B60L3/003 , B60W10/08 , H02H7/20 , H02M1/32 , H03K17/0828 , H03K17/168 , Y02T10/6226
摘要： A collector voltage of a power management semiconductor device is detected by a first comparator, and when the detected collector voltage exceeds a first reference voltage, the first comparator outputs a first detection signal. Furthermore, a gate voltage of the power management semiconductor device is detected by a second comparator, and when the detected gate voltage exceeds a second reference voltage, the second comparator outputs a second detection signal. The second reference voltage is a minimum gate voltage for feeding a rated power to the power management semiconductor device or over, and less than a line power voltage of a drive circuit of the power management semiconductor device. When both the first detection signal and second detection signal are being outputted, the gate voltage is reduced by a gate voltage reduction means so as to protect the power management semiconductor device from overcurrent and overvoltage.
摘要翻译：功率管理半导体器件的集电极电压由第一比较器检测，并且当检测到的集电极电压超过第一参考电压时，第一比较器输出第一检测信号。此外，由第二比较器检测功率管理半导体器件的栅极电压，并且当检测到的栅极电压超过第二参考电压时，第二比较器输出第二检测信号。第二参考电压是用于向功率管理半导体器件提供额定功率或超过功率管理半导体器件的驱动电路的线电源电压的最小栅极电压。当输出第一检测信号和第二检测信号两者时，通过栅极电压降低装置降低栅极电压，以保护功率管理半导体器件免于过电流和过电压。

4. 发明授权

US07746614B2 Drive circuit for switching device 有权
标题翻译：开关装置的驱动电路
公开(公告)号：US07746614B2
公开(公告)日：2010-06-29
申请号：US12358306
申请日：2009-01-23
申请人： Katsumi Ishikawa , Masataka Sasaki , Koichi Suda
发明人： Katsumi Ishikawa , Masataka Sasaki , Koichi Suda
IPC分类号： H02H3/00 , H02H3/08 , H02H9/02
CPC分类号： H03K17/0828
摘要： A drive circuit that controls a switching device ON/OFF and a soft cutoff command circuit that gradually decreases the gate terminal voltage of the switching device when short circuit of the switching device is detected. Additionally, an ON-pulse retention command circuit retains the output of the drive circuit ON when the gate terminal voltage is judged to have exceeded a specified value by a gate voltage judgment comparator that detects the gate terminal voltage of the switching device.
摘要翻译：控制切换装置ON / OFF的驱动电路和软开关指令电路，当检测到开关装置的短路时，逐渐降低开关装置的栅极端子电压。此外，当通过检测开关装置的栅极端子电压的栅极电压判断比较器判断栅极端子电压已经超过规定值时，ON脉冲保持指令电路保持驱动电路的输出。

5. 发明申请

US20090128974A1 Drive Circuit for Switching Device 有权
标题翻译：开关装置驱动电路
公开(公告)号：US20090128974A1
公开(公告)日：2009-05-21
申请号：US12358306
申请日：2009-01-23
申请人： Katsumi Ishikawa , Masataka Sasaki , Koichi Suda
发明人： Katsumi Ishikawa , Masataka Sasaki , Koichi Suda
IPC分类号： H02H9/02
CPC分类号： H03K17/0828
摘要： A drive circuit that controls a switching device ON/OFF and a soft cutoff command circuit that gradually decreases the gate terminal voltage of the switching device when short circuit of the switching device is detected. Additionally, an ON-pulse retention command circuit retains the output of the drive circuit ON when the gate terminal voltage is judged to have exceeded a specified value by a gate voltage judgment comparator that detects the gate terminal voltage of the switching device.
摘要翻译：控制切换装置ON / OFF的驱动电路和软开关指令电路，当检测到开关装置的短路时，逐渐降低开关装置的栅极端子电压。此外，当通过检测开关装置的栅极端子电压的栅极电压判断比较器判断栅极端子电压已经超过规定值时，ON脉冲保持指令电路保持驱动电路的输出。

6. 发明授权

US07483250B2 Drive circuit for switching device 有权
标题翻译：开关装置的驱动电路
公开(公告)号：US07483250B2
公开(公告)日：2009-01-27
申请号：US11546360
申请日：2006-10-12
申请人： Katsumi Ishikawa , Masataka Sasaki , Koichi Suda
发明人： Katsumi Ishikawa , Masataka Sasaki , Koichi Suda
IPC分类号： H02H3/00 , H02H3/08 , H02H9/02
CPC分类号： H03K17/0828
摘要： A drive circuit that controls a switching device ON/OFF and a soft cutoff command circuit that gradually decreases the gate terminal voltage of the switching device when short circuit of the switching device is detected. Additionally, an ON-pulse retention command circuit retains the output of the drive circuit ON when the gate terminal voltage is judged to have exceeded a specified value by a gate voltage judgment comparator that detects the gate terminal voltage of the switching device.
摘要翻译：控制切换装置ON / OFF的驱动电路和软开关指令电路，当检测到开关装置的短路时，逐渐降低开关装置的栅极端子电压。此外，当通过检测开关装置的栅极端子电压的栅极电压判断比较器判断栅极端子电压已经超过规定值时，ON脉冲保持指令电路保持驱动电路的输出。

7. 发明申请

US20070030615A1 Drive circuit for switching device 有权
标题翻译：开关装置的驱动电路
公开(公告)号：US20070030615A1
公开(公告)日：2007-02-08
申请号：US11546360
申请日：2006-10-12
申请人： Katsumi Ishikawa , Masataka Sasaki , Koichi Suda
发明人： Katsumi Ishikawa , Masataka Sasaki , Koichi Suda
IPC分类号： H02H3/00
CPC分类号： H03K17/0828
摘要： A drive circuit that controls a switching device ON/OFF and a soft cutoff command circuit that gradually decreases the gate terminal voltage of the switching device when short circuit of the switching device is detected. Additionally, an ON-pulse retention command circuit retains the output of the drive circuit ON when the gate terminal voltage is judged to have exceeded a specified value by a gate voltage judgment comparator that detects the gate terminal voltage of the switching device.
摘要翻译：控制切换装置ON / OFF的驱动电路和软开关指令电路，当检测到开关装置的短路时，逐渐降低开关装置的栅极端子电压。此外，当通过检测开关装置的栅极端子电压的栅极电压判断比较器判断栅极端子电压已经超过规定值时，ON脉冲保持指令电路保持驱动电路的输出。

8. 发明授权

US07126802B2 Drive circuit for switching device 有权
标题翻译：开关装置的驱动电路
公开(公告)号：US07126802B2
公开(公告)日：2006-10-24
申请号：US10784161
申请日：2004-02-24
申请人： Katsumi Ishikawa , Masataka Sasaki , Koichi Suda
发明人： Katsumi Ishikawa , Masataka Sasaki , Koichi Suda
IPC分类号： H02H3/00
CPC分类号： H03K17/0828
摘要： A drive circuit 21 that controls a switching device 23 ON/OFF and a soft cutoff command circuit that gradually decreases the gate terminal voltage of the switching device 23 when short circuit of the switching device 23 is detected. Additionally, an ON-pulse retention command circuit 11 retains the output of the drive circuit 21 ON when the gate terminal voltage is judged to have exceeded a specified value by a gate voltage judgment comparator 16 that detects the gate terminal voltage of the switching device 23.
摘要翻译：控制切换装置23 ON / OFF的驱动电路21以及当检测到开关装置23的短路时逐渐降低开关装置23的栅极端子电压的软断开指令电路。此外，当通过检测开关装置23的栅极端子电压的栅极电压判断比较器16判定栅极端子电压已经超过规定值时，导通脉冲保持指令电路11保持驱动电路21的输出。。

9. 发明授权

US06960980B2 Power converter with shunt resistor 失效
标题翻译：带分流电阻的电源转换器
公开(公告)号：US06960980B2
公开(公告)日：2005-11-01
申请号：US10102558
申请日：2002-03-19
申请人： Kinya Nakatsu , Masataka Sasaki , Ryuichi Saito , Satoshi Ibori , Masato Takase
发明人： Kinya Nakatsu , Masataka Sasaki , Ryuichi Saito , Satoshi Ibori , Masato Takase
IPC分类号： H01C3/00 , H01C1/14 , H02M1/00 , H02M7/00 , H01C7/00
CPC分类号： H01C1/14 , H02M7/003
摘要： A power converter includes a shunt resistor constituted by a shunt resistance and a plurality of main electrodes made of a sheet-like resistive material. In the shunt resistor, plates lower in volume electric resistivity than the resistive material, higher in thermal conductivity than the resistive material and thicker in thickness than the resistive material are fixedly attached by solder, to the side surfaces of the main electrodes opposite to the side surfaces with which the main electrodes are fixedly attached to an insulating layer. At least one plate main electrode for electrically connecting with main circuit wiring is provided in each of the plates. At least one constricted portion is formed between each of the plate main electrodes and the shunt resistance. Plate detection electrodes for detecting a voltage between the opposite ends of the shunt resistance is provided on the plates near the shunt resistance portion.
摘要翻译：功率转换器包括由分流电阻构成的分流电阻和由片状电阻材料制成的多个主电极。在分流电阻器中，体积电阻率低于电阻材料的板材的导热系数比电阻材料高，电阻材料的厚度比电阻材料通过焊料固定在主电极的与侧面相反的侧面主电极固定在绝缘层上的表面。在每个板中设置有用于与主电路布线电连接的至少一个板主电极。在每个板主电极和分流电阻之间形成至少一个收缩部分。用于检测分流电阻的相对端之间的电压的板检测电极设置在分流电阻部分附近的板上。

10. 发明申请

US20050132726A1 Inverter system and vehicle 有权
标题翻译：逆变器系统和车辆
公开(公告)号：US20050132726A1
公开(公告)日：2005-06-23
申请号：US10920246
申请日：2004-08-18
申请人： Masataka Sasaki , Hideki Miyazaki , Katsumi Ishikawa , Keiji Maekawa
发明人： Masataka Sasaki , Hideki Miyazaki , Katsumi Ishikawa , Keiji Maekawa
IPC分类号： F25D17/00 , G01K13/00 , G05D23/00 , H02M7/48
CPC分类号： B60L3/00 , B60L2200/26 , B60L2210/20 , B60L2240/525 , H02M7/48 , Y02T10/725
摘要： The object of the invention is to provide an inverter system and vehicles using this inverter wherein accurate detection of the abnormal heat generation from the inverter is ensured, despite a large amount of noise signals, a substantial fluctuation in environmental temperature, or a change of cooling performances resulting from the environmental conditions. Based on the output value of an outside air temperature detecting means 150 and temperature calculation parameters inputted from outside the inverter system, the temperature calculation circuit 144B of an error detecting section 144 calculates the temperature Tcal where a temperature detecting means below semiconductor device 152 is installed. A calculation approximate line calculation circuit 144C works out the approximate curve of the difference between the theoretical temperature value and the real temperature value Treal detected by a temperature detecting means below semiconductor device 152, and captures the trend of the temperature difference, using a periodic sampling method, whereby a error determining circuit 144E determines an error, based on the difference from the initial trend obtained in advance or change of the trend.
摘要翻译：本发明的目的是提供一种使用该逆变器的逆变器系统和车辆，其中，即使存在大量的噪声信号，环境温度的显着变动或冷却变化，也能确保从逆变器的异常发热的准确检测由环境条件造成的表演。基于外部空气温度检测装置150的输出值和从逆变器系统外部输入的温度计算参数，误差检测部分144的温度计算电路144B计算温度T cal，其中a 安装半导体装置152下方的温度检测装置。计算近似线计算电路144C计算出由半导体器件152下方的温度检测装置检测的理论温度值和实际温度值实际值之间的差的近似曲线，并且捕获趋势的温度差，使用周期性采样方法，由此误差确定电路144E基于与预先获得的初始趋势的差异或趋势的变化来确定误差。

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