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1. 发明申请

US20110041337A1 METHOD OF MANUFACTURING LIQUID DISCHARGE HEAD SUBSTRATE AND METHOD OF PROCESSING THE SUBSTRATE 有权
标题翻译：制造液体放电头基板的方法及其处理方法
公开(公告)号：US20110041337A1
公开(公告)日：2011-02-24
申请号：US12990093
申请日：2009-06-17
申请人： Masataka Kato , Keisuke Kishimoto
发明人： Masataka Kato , Keisuke Kishimoto
IPC分类号： B23P17/04
CPC分类号： B41J2/1603 , B23K26/0661 , B23K26/146 , B23K26/384 , B23K26/389 , B41J2/1628 , B41J2/1629 , B41J2/1634 , B41J2/1639 , Y10T29/49401
摘要： A method of processing a liquid discharge head substrate includes the step of providing the substrate, and the step of providing a recessed portion at a back surface of the substrate by discharging liquid in a linear form to the back surface of the substrate, and by processing the back surface of the substrate with laser light that has passed along the liquid and in the liquid.
摘要翻译：处理液体排出头基板的方法包括提供基板的步骤，以及通过将线性形式的液体排出到基板的背面而在基板的背面设置凹部的步骤，以及通过加工具有沿着液体和液体通过的激光的衬底的背面。

2. 发明授权

US08549750B2 Method of manufacturing liquid discharge head substrate and method of processing the substrate 有权
标题翻译：液体排出头基板的制造方法及其处理方法
公开(公告)号：US08549750B2
公开(公告)日：2013-10-08
申请号：US12990093
申请日：2009-06-17
申请人： Masataka Kato , Keisuke Kishimoto
发明人： Masataka Kato , Keisuke Kishimoto
IPC分类号： B21D53/76 , B23P17/00 , B41J2/15 , B41J2/145
CPC分类号： B41J2/1603 , B23K26/0661 , B23K26/146 , B23K26/384 , B23K26/389 , B41J2/1628 , B41J2/1629 , B41J2/1634 , B41J2/1639 , Y10T29/49401
摘要： A method of processing a liquid discharge head substrate includes the step of providing a recessed portion in the back surface of the substrate by discharging a manufacturing liquid in a linear trajectory to the back surface of the substrate and by irradiating the back surface of the substrate with laser light that passes along and in the manufacturing liquid.
摘要翻译：处理液体排出头基板的方法包括以下步骤：通过将线性轨迹中的制造液体排出到基板的背面，并且通过用基板的背面照射基板的背面来在基板的背面设置凹部在制造液中通过的激光。

3. 发明申请

US20130027489A1 PRINTING APPARATUS 审中-公开
标题翻译：打印设备
公开(公告)号：US20130027489A1
公开(公告)日：2013-01-31
申请号：US13558995
申请日：2012-07-26
申请人： Kazuo Suzuki , Masaya Uetsuki , Toshimitsu Danzuka , Masataka Kato , Tsuyoshi Ibe , Asako Tomida , Hiroaki Komatsu
发明人： Kazuo Suzuki , Masaya Uetsuki , Toshimitsu Danzuka , Masataka Kato , Tsuyoshi Ibe , Asako Tomida , Hiroaki Komatsu
IPC分类号： B41J2/01
CPC分类号： B41J11/002
摘要： A printing apparatus includes a printing unit configured to apply ink to a recording medium while reciprocating a print head with respect to the recording medium and a drying unit configured to apply energy for accelerating dryness to the recording medium to which the ink is applied by the print head. The drying unit applies a larger energy at edges of a range within which the printing unit moves on the recording medium than at a middle of the range.
摘要翻译：打印装置包括打印单元，该打印单元被配置为在打印头相对于记录介质往复运动的同时向记录介质施加墨水;以及干燥单元，其构造成将能够加速干燥的能量施加到由印刷物施加墨水的记录介质头。干燥单元在记录介质上移动的范围的边缘处比在该范围的中间处施加更大的能量。

4. 发明授权

US07692234B2 Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device 有权
标题翻译：非易失性半导体存储器及其制造方法，以及半导体器件及其制造方法
公开(公告)号：US07692234B2
公开(公告)日：2010-04-06
申请号：US11862928
申请日：2007-09-27
申请人： Tetsuo Adachi , Masataka Kato , Toshiaki Nishimoto , Nozomu Matsuzaki , Takashi Kobayashi , Yoshimi Sudou , Toshiyuki Mine
发明人： Tetsuo Adachi , Masataka Kato , Toshiaki Nishimoto , Nozomu Matsuzaki , Takashi Kobayashi , Yoshimi Sudou , Toshiyuki Mine
IPC分类号： H01L29/788
CPC分类号： H01L21/28273 , G11C11/5628 , G11C16/0466 , G11C16/10 , G11C16/3454 , H01L21/28061 , H01L27/105 , H01L27/115 , H01L27/11519 , H01L27/11526 , H01L27/11529 , H01L27/11536 , H01L27/11546 , H01L29/6659 , H01L29/66825 , H01L29/7833
摘要： A semiconductor device, which ensures device reliability especially in fine regions and enables great capacitance and high-speed operations, has memory cells including, in a first region of a main surface of a semiconductor substrate, a gate insulating film, a floating gate electrode, an interlayer insulating film, a control gate electrode, and source and drain regions of the second conduction type arranged in a matrix, with a shallow isolation structure for isolating the memory cells. When using a shallow structure buried with an insulating film for element isolation, the isolation withstand voltage in fine regions can be prevented from lowering and the variation in threshold level of selective transistors can be reduced. When the memory cells in a memory mat are divided by means of selective transistors, the disturb resistance of the memory cells can be improved.
摘要翻译：一种半导体器件，其特别是确保器件的可靠性，特别是在微细的区域中并且能够实现大的电容和高速操作，具有在半导体衬底的主表面的第一区域中包括栅绝缘膜，浮栅电极，层间绝缘膜，控制栅极电极以及以矩阵形式布置的第二导电类型的源极和漏极区域，具有用于隔离存储单元的浅隔离结构。当使用用绝缘膜掩埋的浅结构用于元件隔离时，可以防止微细区域中的隔离耐受电压降低，并且可以降低选择性晶体管的阈值电平的变化。当通过选择性晶体管分配存储器垫中的存储单元时，可以提高存储单元的干扰电阻。

5. 发明授权

US07637662B2 Rolling guide unit 有权
标题翻译：滚动导轨单元
公开(公告)号：US07637662B2
公开(公告)日：2009-12-29
申请号：US11192880
申请日：2005-07-29
申请人： Masataka Kato , Norimasa Agari
发明人： Masataka Kato , Norimasa Agari
IPC分类号： F16C29/06
CPC分类号： F16C29/0685 , F16C29/0609
摘要： A rolling guide unit as provided here is capable of raising the degree of flexibility in design and simplifying the control of lubricating oil and has a low sliding resistance to the rolling elements. The rolling guide unit is provided with a cylindrical member 2 through which a rail 1 passes for it to slide on, raceway paths a constituted of a combination of the cylindrical member 2 and the rail 1, circuit paths b formed in the cylindrical member 2 and each making interconnection between the two ends of each of the raceway paths a by way of direction-changing recesses 18, and a plurality of rolling elements 19 placed in the circuit paths b and the raceway paths a. The rolling elements 19 circulate in the circuit paths b and the raceway paths a in accordance with the relative movement between the rail 1 and the cylindrical member 2. The rolling guide unit is characterized by mounting holes 20 formed in the cylindrical member 2; oiled members 21 respectively installed in the mounting holes 20; and oil-supply members 23 each provided along the contact faces of the rolling elements 19 traveling through either the raceway path a or the circuit path 1. The oil-supply members 23 are in contact with the oiled members 21.
摘要翻译：这里提供的滚动导向单元能够提高设计的灵活性，简化润滑油的控制，并且对滚动元件具有低的滑动阻力。滚动导向单元设有圆柱形构件2，轨道1通过该圆筒构件2滑动，圆筒构件2和导轨1的组合构成的滚道路径a，形成在圆筒构件2中的电路路径b和每个通过方向改变凹部18在每个滚道路径a的两端之间进行互连，以及放置在电路路径b和滚道路径a中的多个滚动元件19。滚动元件19根据轨道1和圆柱形构件2之间的相对运动，在电路路径b和轨道a中循环。滚动导向单元的特征在于安装在圆柱形构件2中的孔20; 分别安装在安装孔20中的上油部件21; 以及供给构件23，其沿着滚动体19的滚道元件19的接触面设置，滚动体19通过滚道路径a或回路路径1。油供给构件23与油面构件21接触。

6. 发明授权

US07528036B2 Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device 有权
公开(公告)号：US07528036B2
公开(公告)日：2009-05-05
申请号：US11107826
申请日：2005-04-18
申请人： Tetsuo Adachi , Masataka Kato , Toshiaki Nishimoto , Nozomu Matsuzaki , Takashi Kobayashi , Yoshimi Sudou , Toshiyuki Mine
发明人： Tetsuo Adachi , Masataka Kato , Toshiaki Nishimoto , Nozomu Matsuzaki , Takashi Kobayashi , Yoshimi Sudou , Toshiyuki Mine
IPC分类号： H01L21/336
CPC分类号： H01L21/28273 , G11C11/5628 , G11C16/0466 , G11C16/10 , G11C16/3454 , H01L21/28061 , H01L27/105 , H01L27/115 , H01L27/11519 , H01L27/11526 , H01L27/11529 , H01L27/11536 , H01L27/11546 , H01L29/6659 , H01L29/66825 , H01L29/7833
摘要： A semiconductor device, which ensures device reliability especially in fine regions and enables great capacitance and high-speed operations, has memory cells including, in a first region of a main surface of a semiconductor substrate, a gate insulating film, a floating gate electrode, an interlayer insulating film, a control gate electrode, and source and drain regions of the second conduction type arranged in a matrix, with a shallow isolation structure for isolating the memory cells. When using a shallow structure buried with an insulating film for element isolation, the isolation withstand voltage in fine regions can be prevented from lowering and the variation in threshold level of selective transistors can be reduced. When the memory cells in a memory mat are divided by means of selective transistors, the disturb resistance of the memory cells can be improved.

7. 发明申请

US20080219082A1 NONVOLATILE SEMICONDUCTOR MEMORY 有权
标题翻译：非易失性半导体存储器
公开(公告)号：US20080219082A1
公开(公告)日：2008-09-11
申请号：US12046150
申请日：2008-03-11
申请人： Masataka Kato , Tetsuo Adachi , Toshihiro Tanaka , Toshio Sasaki , Hitoshi Kume , Katsutaka Kimura
发明人： Masataka Kato , Tetsuo Adachi , Toshihiro Tanaka , Toshio Sasaki , Hitoshi Kume , Katsutaka Kimura
IPC分类号： G11C8/06 , G11C8/10
CPC分类号： G11C16/0416 , G11C8/08 , G11C16/10 , G11C16/12 , G11C16/16 , G11C16/34 , G11C16/3418 , G11C16/3427 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L29/7883 , H01L29/7885
摘要： Disclosed is a nonvolatile memory system including at least one nonvolatile memory each having a plurality of nonvolatile memory cells and a buffer memory; and a control device coupled to the nonvolatile memory. The control device is enabled to receive external data and to apply the data to the nonvolatile memory, and the nonvolatile memory is enabled to operate a program operation including storing the received data to the buffer memory and storing the data held in the buffer memory to ones of nonvolatile memory cells. Moreover, the control device is enabled to receive external data while the nonvolatile memory is operating in the program operation. Also, the buffer memory is capable of receiving a unit of data, equal to the data length of data to be stored at one time of the program operation, the data length being more than 1 byte.
摘要翻译：公开了一种非易失性存储器系统，包括至少一个非易失性存储器，每个非易失性存储器具有多个非易失性存储单元和缓冲存储器; 以及耦合到所述非易失性存储器的控制装置。控制装置能够接收外部数据并将数据应用于非易失性存储器，并且使非易失性存储器能够操作程序操作，包括将接收到的数据存储到缓冲存储器并将保存在缓冲存储器中的数据存储到缓冲存储器中的非易失性存储单元。此外，控制装置能够在非易失性存储器在程序操作中操作时接收外部数据。此外，缓冲存储器能够接收与程序运行一次要存储的数据的数据长度相等的数据单位，数据长度大于1字节。

8. 发明授权

US07234873B2 Rolling-contact bearing containing solid lubricant therein 有权
标题翻译：含有固体润滑剂的滚动接触轴承
公开(公告)号：US07234873B2
公开(公告)日：2007-06-26
申请号：US10786287
申请日：2004-02-26
申请人： Masataka Kato , Toshiaki Nishimatsu
发明人： Masataka Kato , Toshiaki Nishimatsu
IPC分类号： F16C33/66 , F16C33/56
CPC分类号： F16C33/6677 , F16C13/006 , F16C19/44 , F16C33/56 , F16C33/565 , F16C33/6648 , F16C33/6696
摘要： A cage, rollers and solid lubricant are all formed integrally into a complete unitary molding with using difference in thermal expansion in a mold. Assembling the complete unitary molding into the race in the rolling-contact bearing is made easier. The complete unitary molding is made such that the rollers remain exposed partially at their rolling surfaces above the inside circular surface of the complete unitary molding while the solid lubricant on the outside circular surface of the complete unitary molding is squeezed out from between the rolling surfaces of the rollers and the inside circular surface of the outside mold upon molding operation, thereby getting the rolling surfaces of the rollers exposed partially. The mold is composed of an outside mold, an inside mold and an intermediate mold, which is made of a substance larger in thermal expansion than other substance for the outside and inside molds.
摘要翻译：使用模具中的热膨胀差异，笼子，滚子和固体润滑剂都整体形成为完整的单一模制件。将完整的整体成型装配到滚动接触轴承中的滚道更容易。完整的整体模制被制成使得辊在其整个模制件的内部圆形表面上方的滚动表面部分地暴露在整个模制件的外部圆形表面上的固体润滑剂从滚动表面的滚动表面之间被挤出辊和外模的内圆形表面，从而使辊的滚动表面部分暴露。该模具由外部模具，内部模具和中间模具组成，其由热膨胀的物质制成，而不是外部和内部模具中的其他物质。

9. 发明申请

US20060102967A1 Semiconductor integrated circuit 失效
公开(公告)号：US20060102967A1
公开(公告)日：2006-05-18
申请号：US11320850
申请日：2005-12-30
申请人： Yoshiaki Kamigaki , Shinichi Minami , Kozo Katayama , Masataka Kato
发明人： Yoshiaki Kamigaki , Shinichi Minami , Kozo Katayama , Masataka Kato
IPC分类号： H01L29/76
CPC分类号： G11C16/0475 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L29/42332 , H01L29/7887
摘要： A multi-storage nonvolatile memory of high density, high speed and high reliability has a memory transistor and switch transistors disposed on both the sides of the memory transistor. The memory transistor includes a gate insulating film having discrete traps and a memory gate electrode, whereas the switch transistors include switch gate electrodes. The gate insulating film has the discrete traps for storing information charge, can locally inject carriers, and one memory cell constitutes a multi-storage cell for storing at least information of 2 bits. The switch transistors having the switch gate electrodes realize source side injection. The memory transistor is fommed together with the switch transistors in self-aligned diffusion. The memory gate electrode of the memory transistor is connected to a word line so as to perform word-line erase.

10. 发明申请

US20050252319A1 Dust proof sliding device 有权
标题翻译：防尘滑动装置
公开(公告)号：US20050252319A1
公开(公告)日：2005-11-17
申请号：US11085081
申请日：2005-03-22
申请人： Masataka Kato
发明人： Masataka Kato
IPC分类号： F16H7/02 , F16C29/08 , F16H7/08 , F16H25/20 , F16H25/24
CPC分类号： F16C29/08 , Y10T74/18576 , Y10T74/18712 , Y10T74/1872
摘要： A sliding device is extensively acceptable for a variety of machines, made reduced in the overall length, thereby compact in construction. The sliding device, since having a drive train enclosure made airtight, is acceptable for the operation in the clean environment. The sliding device is comprised of an elongated sliding unit enclosure of airtight construction, a sliding table and a driving motor that is coupled to the drive train enclosure in parallel with the sliding unit enclosure. The drive train enclosure receives therein a drive train to carry power from the driving motor to the sliding table. The drive train enclosure is mounted with the driving motor with keeping airtightness.
摘要翻译：滑动装置对于各种机器是广泛可接受的，减小了总长度，从而在结构上紧凑。滑动装置由于具有气密的传动系，因此在干净的环境中操作是可以接受的。滑动装置由气密结构的细长滑动单元壳体，滑动台和驱动马达组成，驱动马达与滑动单元外壳平行地联接到传动系外壳。传动系统箱内容纳传动系，以将驱动电机的动力传递到滑台。传动系外壳与驱动电机一起安装，保持气密性。

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