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    • 5. 发明申请
    • ZOOM LENS SYSTEM
    • 变焦镜头系统
    • US20120212834A1
    • 2012-08-23
    • US13399656
    • 2012-02-17
    • Masashi Yoshida
    • Masashi Yoshida
    • G02B15/14
    • G02B15/173G02B15/14
    • A zoom lens system has a combined focal length fw at the wide angle end and includes, in order from an object side, a first lens group with positive refractive power and combined focal length f1; a second lens group with negative refractive power; a third lens group with positive refractive power; a fourth lens group with positive refractive power; and a fifth lens group with positive refractive power and including, in order from the object side, a negative biconcave lens with focal length f51 and a positive biconvex lens with focal length f52, the negative biconcave lens and the positive biconvex lens disposed with an air space shorter than a center thickness of the negative biconcave lens in between and both surfaces of the positive biconvex lens being aspherical. The system satisfies the following conditions: 13.5
    • 变焦透镜系统在广角端具有组合焦距fw,从物体侧依次包括具有正折光力的第一透镜组和组合焦距f1; 具有负屈光力的第二透镜组; 具有正屈光力的第三透镜组; 具有正屈光力的第四透镜组; 以及具有正屈光力的第五透镜组,并且从物体侧依次包括具有焦距f51的负双凸透镜和焦距为f52的正双凸透镜,负双凸透镜和正双凸透镜配置有空气 空心短于正双凸透镜之间的负双凸透镜的中心厚度,其正面为非球面。 该系统满足以下条件:13.5
    • 7. 发明申请
    • Method of etching the back side of a wafer
    • 刻蚀晶片背面的方法
    • US20100323524A1
    • 2010-12-23
    • US12801594
    • 2010-06-16
    • Masashi Yoshida
    • Masashi Yoshida
    • H01L21/3065
    • B81C1/00801B81C2201/0132B81C2201/053
    • To etch the back side of a wafer, the front side of the wafer is first coated with a positive photoresist to form a protective film. The surface of the protective film is hardened by heating, or by heating and ultraviolet curing. The wafer is then placed in a plasma etching apparatus with the hardened surface of the protective film in contact with an electrode of the etching apparatus, and the back side of the wafer is patterned by plasma etching. When the etching is completed, the front side of the wafer is separated from the electrode and the wafer is removed from the plasma etching apparatus. The hardened positive photoresist prevents the wafer from sticking to the electrode.
    • 为了蚀刻晶片的背面,首先用正性光致抗蚀剂涂覆晶片的正面以形成保护膜。 保护膜的表面通过加热或加热和紫外线固化而硬化。 然后将晶片放置在等离子体蚀刻装置中,其中保护膜的硬化表面与蚀刻装置的电极接触,并且通过等离子体蚀刻对晶片的背面进行图案化。 当蚀刻完成时,晶片的前侧与电极分离,晶片从等离子体蚀刻装置中除去。 硬化的正性光致抗蚀剂防止晶片粘到电极上。
    • 9. 发明授权
    • Semiconductor device fabrication method
    • 半导体器件制造方法
    • US07687296B2
    • 2010-03-30
    • US11513130
    • 2006-08-31
    • Masashi Yoshida
    • Masashi Yoshida
    • H01L21/00
    • G03F7/168
    • Circuit elements, such as aluminum interconnects, and a protective film for protecting these circuit elements are formed on a surface of a semiconductor substrate. Resist is formed covering the protective film. The semiconductor substrate on which the resist covering the protective film is formed is dipped into pure water so as to allow the water to filter into a gap between the resist and semiconductor substrate. Then the semiconductor substrate having the resist thereon is dried in high temperature air, and the resist is adhered to the semiconductor substrate by a sticking function due to the surface tension generated when the water is decreasing. The semiconductor substrate to which the resist is adhered is cleaned by a hydrogen fluoride aqueous solution.
    • 诸如铝互连的电路元件和用于保护这些电路元件的保护膜形成在半导体衬底的表面上。 形成覆盖保护膜的抗蚀剂。 将形成有保护膜的抗蚀剂的半导体基板浸入纯水中,以使水过滤到抗蚀剂和半导体衬底之间的间隙。 然后将其上具有抗蚀剂的半导体衬底在高温空气中干燥,并且由于当水下降时产生的表面张力,抗蚀剂通过粘附功能粘附到半导体衬底。 用氟化氢水溶液清洗附着有抗蚀剂的半导体衬底。