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    • 2. 发明授权
    • Fuel injection control system for engine
    • 发动机燃油喷射控制系统
    • US6122589A
    • 2000-09-19
    • US289532
    • 1999-04-09
    • Masashi YamaguchiShigeki Hashimoto
    • Masashi YamaguchiShigeki Hashimoto
    • F02D41/04F02D41/14F02D41/24
    • F02D41/047F02D41/1404F02D41/1405F02D41/1458F02D41/2458F02D2041/1431F02D2041/1433F02D2200/0402F02D2200/0411
    • A fuel injection control system of an engine includes: (a) an intake air quantity estimation unit for estimating the quantity of intake air; (b) an intake fuel quantity estimation unit for estimating the quantity of intake fuel; (c) an estimated air-fuel ratio calculation unit for calculating an estimated air-fuel ratio; (d) a target air-fuel ratio setting unit for setting a target air-fuel ratio; (e) a feedback control unit for providing a fuel injection signal to the engine, which fuel injection signal is outputted also to the intake fuel quantity estimation unit as one of the predetermined signals; and (f) an actual air-fuel ratio deviation estimation unit for estimating a deviation of an actual air-fuel ratio or a factor correlated thereto from a predetermined level, which unit is programmed to output a deviation signal based on predetermined signals. In the above, at least one unit selected from the intake air quantity estimation unit, the intake fuel estimation unit, and the target air-fuel ratio setting unit is provided with a learning function which is programmed to modify output from the at least one unit based on the deviation signal used as teacher data to minimize the deviation. The system requires a reduced number of sensors.
    • 发动机的燃料喷射控制系统包括:(a)用于估计进气量的进气量估计单元; (b)进气量估计单元,用于估计进气量; (c)用于计算估计空燃比的估计空燃比计算单元; (d)用于设定目标空燃比的目标空燃比设定单元; (e)反馈控制单元,用于向发动机提供燃料喷射信号,该燃料喷射信号也作为预定信号之一输出到进气燃料量估计单元; 以及(f)实际空燃比偏差估计单元,用于从预定水平估计实际空燃比或其相关系数的偏差,该单元被编程为基于预定信号输出偏差信号。 在上述中,从进气量估计单元,进气燃料推定单元和目标空燃比设定单元中选择的至少一个单元具有学习功能,该学习功能被编程为修改来自至少一个单元的输出 基于用作教师数据的偏差信号来最小化偏差。 该系统需要减少数量的传感器。
    • 9. 发明申请
    • Photocatalyst water treating apparatus
    • 光催化剂水处理装置
    • US20070020158A1
    • 2007-01-25
    • US10558757
    • 2004-03-24
    • Hikaru KuramotoShigeki Hashimoto
    • Hikaru KuramotoShigeki Hashimoto
    • B01J19/12
    • C02F1/325C02F1/001C02F1/283C02F1/461C02F1/46109C02F1/4618C02F1/4674C02F1/725C02F2001/46142C02F2101/10C02F2101/30C02F2103/023C02F2103/42C02F2201/3227C02F2201/324C02F2201/4617C02F2305/10
    • An object is to dissolve and remove rust and scale deposits of inorganic compounds formed in a reservoir, in which to store water that requires processing, or in piping, or on a jacket of a UV-lamp without using any chemicals. A photocatalytic water-processing system utilizes a reservoir 11 in which organic and inorganic materials present in water 100 that requires processing the water are decomposed. The system comprises: a circulation path including: a main unit 2 arranged outside the reservoir 11; an inlet pipe 8 connecting to an inlet of the main unit 2; and an outlet pipe 9 connecting to an outlet of the main unit 2; a pump 4 for circulating the water; a filter 5 arranged within the main unit 2; photocatalytic processing means arranged downstream of the filter 5 and including a photocatalyst carrier 7 and a UV-lamp 6; and an electrode unit 3 arranged within the reservoir 11. The water 100 is electrolyzed as a current is applied to the electrode unit 3.
    • 本发明的目的是在不使用任何化学物质的情况下,溶解并去除形成在储存器中的无机化合物的沉积物,其中存储需要加工的水,或在管道中或在UV灯的护套上。 光催化水处理系统利用储存器11,其中存在于水100中需要处理水的有机和无机材料被分解。 该系统包括:循环路径,包括:布置在储存器11外部的主单元2; 连接到主单元2的入口的入口管8; 和连接到主单元2的出口的出口管9; 用于循环水的泵4; 布置在主单元2内的过滤器5; 布置在过滤器5的下游并包括光催化剂载体7和UV灯6的光催化处理装置; 以及布置在储存器11内的电极单元3。 当电流被施加到电极单元3时,水100被电解。
    • 10. 发明授权
    • Semiconductor light emitting device
    • 半导体发光器件
    • US06603147B1
    • 2003-08-05
    • US09587254
    • 2000-06-02
    • Shigeki HashimotoKatsunori YanashimaMasao IkedaHiroshi Nakajima
    • Shigeki HashimotoKatsunori YanashimaMasao IkedaHiroshi Nakajima
    • H01L29221
    • H01L33/32H01S5/20H01S5/2004H01S5/3211H01S5/32341
    • A semiconductor light emitting device using nitride III-V compound semiconductors is improved to reduce the threshold current density with almost no increase of the operation voltage. In a GaN semiconductor laser as one version thereof, the p-type cladding layer is made of two or more semiconductor layers different in band gap, and a part of the p-type cladding layer near one of its boundaries nearer to the active layer is made of a semiconductor layer having a large band gap than that of the remainder part. More specifically, in a AlGaN/GaN/GaInN SCH-structured GaN semiconductor laser, a p-type AlGaN cladding layer is made of a p-type Alx1Ga1−x1N layer in contact with a p-type GaN optical guide layer, and a p-type Alx2Ga1−x2N layer overlying the p-type Alx1Ga1−x1N layer (where 0≦x2
    • 改进了使用氮化物III-V化合物半导体的半导体发光器件,几乎不增加工作电压,从而降低阈值电流密度。 在作为其一个版本的GaN半导体激光器中,p型覆层由带隙不同的两个以上的半导体层构成,并且在靠近有源层的边界附近的p型覆层的一部分为 由具有比剩余部分大的带隙的半导体层制成。 更具体地,在AlGaN / GaN / GaInN SCH结构的GaN半导体激光器中,p型AlGaN包层由与p型GaN光导层接触的p型Al x Ga 1-x N层构成,p 型Alx2Ga1-x2N层,其中p型Alx1Ga1-x1N层(其中0 <= x2