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1. 发明申请

US20050067934A1 Discharge apparatus, plasma processing method and solar cell 审中-公开
标题翻译：放电装置，等离子体处理方法和太阳能电池
公开(公告)号：US20050067934A1
公开(公告)日：2005-03-31
申请号：US10670476
申请日：2003-09-26
申请人： Masashi Ueda , Tomoko Takagi , Norikazu Ito , Yoshimi Watabe
发明人： Masashi Ueda , Tomoko Takagi , Norikazu Ito , Yoshimi Watabe
IPC分类号： H01J17/26 , H01J37/32 , H01J61/28 , H01L31/20 , H05H1/24
CPC分类号： H01L31/202 , H01J37/32091 , H01J2237/3132 , H01J2237/3137 , H01J2237/3142 , H05H1/46 , H05H2001/463 , Y02E10/50 , Y02P70/521
摘要： The object of this invention is to realize the new configuration of antenna and the electric power feeding method which substantially suppress the generation of standing wave and consequently to provide a discharge apparatus to generate plasma having an excellent uniformity, a plasma processing method for large-area substrate, and a solar cell manufactured with a high productivity. The present invention is composed of a plurality of U-shaped antenna elements having a power feeding end and a grounded end which are arranged to form an array antenna in such a way that the grounded end and the power feeding end are alternately placed in parallel at regular intervals on a plane, wherein the alternating current electric powers with the same excitation frequency are simultaneously fed to the power feeding ends with the phase shift of 180 degrees between adjacent power feeding ends, the excitation frequency of the alternating current power is 10 MHz-2 GHz, and the length of the conductor is set so that the measured ratio of reflected wave to incident wave is 0.1 or less at the power feeding end. It is also possible to determine the length La of straight conductor to hold the inequality: 0.5(1/α)
摘要翻译：本发明的目的是实现基本上抑制驻波产生的天线的新配置和馈电方法，从而提供具有均匀性优异的等离子体的放电装置，大面积等离子体处理方法基板和以高生产率制造的太阳能电池。本发明由具有供电端和接地端的多个U形天线元件组成，这些U形天线元件被布置成形成阵列天线，使得接地端和馈电端交替地平行放置在其中具有相同激励频率的交流电功率在相邻供电端之间以180度的相移同时馈送到馈电端，交流功率的激励频率为10MHz- 2GHz，并且设定导体的长度，使得测得的反射波与入射波的比例在馈电端为0.1或更小。也可以确定直线导体的长度La以保持不等式：0.5（1 /α）

2. 发明申请

US20060011231A1 Method for forming thin film and apparatus therefor 有权
标题翻译：薄膜形成方法及其设备
公开(公告)号：US20060011231A1
公开(公告)日：2006-01-19
申请号：US10529904
申请日：2003-10-03
申请人： Masashi Ueda , Tomoko Takagi , Norikazu Ito
发明人： Masashi Ueda , Tomoko Takagi , Norikazu Ito
IPC分类号： H01L31/00
CPC分类号： C23C16/509 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A plurality of antenna elements, each of which has first and second linear conductors whose first ends are electrically interconnected are formed. The antenna elements are arranged in plane in such a way that the first and second linear conductors are alternated and separated from one another at regular intervals, thereby forming one or more array antennas which are disposed in a chamber. The second ends of the first linear conductors are connected to a high-frequency power supply, and the second ends of the second linear conductors are connected to ground. A plurality of substrates are parallel placed on both sides of the array antennas at distances approximate to the distances between the linear conductors. A film is formed by introducing an ingredient gas into the chamber.
摘要翻译：形成有多个天线元件，每个天线元件具有第一和第二线性导体，其第一端电互连。天线元件布置在平面中，使得第一和第二线性导体以规则的间隔彼此交替和分离，从而形成设置在腔室中的一个或多个阵列天线。第一线性导体的第二端连接到高频电源，第二线性导体的第二端连接到地。多个基板平行地放置在阵列天线的两侧，距离线性导体之间的距离近似。通过将成分气体引入室中形成膜。

3. 发明申请

US20110297089A1 Method For Forming Thin Film And Apparatus Therefor 审中-公开
标题翻译：薄膜形成方法及其设备
公开(公告)号：US20110297089A1
公开(公告)日：2011-12-08
申请号：US13211901
申请日：2011-08-17
申请人： Masashi UEDA , Tomoko Takagi , Norikazu Ito
发明人： Masashi UEDA , Tomoko Takagi , Norikazu Ito
IPC分类号： H01L31/18 , C23C16/50 , C23C16/455 , C23C16/458 , B05C9/08 , B05C13/00
CPC分类号： C23C16/509 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A plurality of antenna elements, each of which has first and second linear conductors whose first ends are electrically interconnected are formed. The antenna elements are arranged in plane in such a way that the first and second linear conductors are alternated and separated from one another at regular intervals, thereby forming one or more array antennas which are disposed in a chamber. The second ends of the first linear conductors are connected to a high-frequency power supply, and the second ends of the second linear conductors are connected to ground. A plurality of substrates are parallel placed on both sides of the array antennas at distances approximate to the distances between the linear conductors. A film is formed by introducing an ingredient gas into the chamber.
摘要翻译：形成有多个天线元件，每个天线元件具有第一和第二线性导体，其第一端电互连。天线元件布置在平面中，使得第一和第二线性导体以规则的间隔彼此交替和分离，从而形成设置在腔室中的一个或多个阵列天线。第一线性导体的第二端连接到高频电源，第二线性导体的第二端连接到地。多个基板平行地放置在阵列天线的两侧，距离线性导体之间的距离近似。通过将成分气体引入室中形成膜。

4. 发明授权

US08034418B2 Method for forming thin film and apparatus therefor 有权
标题翻译：薄膜形成方法及其设备
公开(公告)号：US08034418B2
公开(公告)日：2011-10-11
申请号：US10529904
申请日：2003-10-03
申请人： Masashi Ueda , Tomoko Takagi , Norikazu Ito
发明人： Masashi Ueda , Tomoko Takagi , Norikazu Ito
IPC分类号： C23C16/00
CPC分类号： C23C16/509 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A plurality of antenna elements, each of which has first and second linear conductors whose first ends are electrically interconnected are formed. The antenna elements are arranged in plane in such a way that the first and second linear conductors are alternated and separated from one another at regular intervals, thereby forming one or more array antennas which are disposed in a chamber. The second ends of the first linear conductors are connected to a high-frequency power supply, and the second ends of the second linear conductors are connected to ground. A plurality of substrates are parallel placed on both sides of the array antennas at distances approximate to the distances between the linear conductors. A film is formed by introducing an ingredient gas into the chamber.
摘要翻译：形成有多个天线元件，每个天线元件具有第一和第二线性导体，其第一端电互连。天线元件布置在平面中，使得第一和第二线性导体以规则的间隔彼此交替和分离，从而形成设置在腔室中的一个或多个阵列天线。第一线性导体的第二端连接到高频电源，第二线性导体的第二端连接到地。多个基板平行地放置在阵列天线的两侧，距离线性导体之间的距离近似。通过将成分气体引入室中形成膜。

5. 发明申请

US20050115504A1 Method and apparatus for forming thin films, method for manufacturing solar cell, and solar cell 审中-公开
标题翻译：用于形成薄膜的方法和装置，太阳能电池的制造方法和太阳能电池
公开(公告)号：US20050115504A1
公开(公告)日：2005-06-02
申请号：US10725905
申请日：2003-12-01
申请人： Masashi Ueda , Tomoko Takagi , Norikazu Ito
发明人： Masashi Ueda , Tomoko Takagi , Norikazu Ito
IPC分类号： C23C16/44 , C23C16/00 , C23C16/24 , C23C16/505 , H01L21/205 , H01L31/04 , H05H1/24
CPC分类号： H01J37/32082 , C23C16/24 , C23C16/45523 , C23C16/505
摘要： An apparatus for forming thin films forms a plurality of thin films in a single chamber by sequential formation of at least a first and a second thin film on a substrate by an antenna type plasma CVD method. This apparatus is provided with a residual material removal apparatus, which removes from the chamber residual materials resulting from the step for forming the first film and which affect the properties of the second film. A method and an apparatus for forming films and a solar cell removes residual material (including material gas) resulting in the step for forming the first film which have an effect on the properties of the second film. Since a plurality of films are deposited inside a single chamber, it is unnecessary to provide a plurality of chambers, thus enabling the apparatus and solar cell to be more compact and of reduced cost.
摘要翻译：用于形成薄膜的装置通过天线型等离子体CVD方法在衬底上顺序地形成至少第一和第二薄膜而在单个室中形成多个薄膜。该装置设置有残留材料去除装置，其从室中除去由用于形成第一膜的步骤产生的并且影响第二膜的性质的剩余材料。用于形成薄膜和太阳能电池的方法和装置除去残留材料（包括材料气体），导致形成第一薄膜的步骤，这对第二薄膜的性能有影响。由于多个膜沉积在单个室内，所以不需要设置多个室，因此能够使装置和太阳能电池更加紧凑并降低成本。

6. 发明授权

US06933009B2 Thin-film deposition method 失效
标题翻译：薄膜沉积法
公开(公告)号：US06933009B2
公开(公告)日：2005-08-23
申请号：US10428849
申请日：2003-05-05
申请人： Masashi Ueda , Tomoko Takagi
发明人： Masashi Ueda , Tomoko Takagi
IPC分类号： H01L21/205 , B01J3/00 , B01J3/02 , B01J19/00 , C23C16/458 , C23C16/46 , C23C16/509 , C23C16/54 , H01L31/04 , C23C16/00
CPC分类号： C23C16/46 , C23C16/4587 , C23C16/509 , C23C16/54
摘要： In a thin-film deposition method, a substrate is placed in a heat chamber having a pressure equal to or higher than an atmospheric pressure, and the substrate is heated in the heat chamber by supplying gas having a temperature higher than a room temperature by forced convection. The heated substrate is transferred from the heat chamber into a deposition chamber which is a vacuum chamber connected to the heat chamber directly or indirectly with a valve interposed therebetween. Then, a thin-film deposition is carried out on the substrate in the deposition chamber at a deposition temperature higher than the room temperature.
摘要翻译：在薄膜沉积方法中，将基板放置在等于或大于大气压力的加热室中，并且通过强制地供给具有高于室温的气体在加热室中加热基板对流。加热的基板从加热室转移到沉积室，该沉积室是直接或间接地连接到加热室的真空室，其间插入阀。然后，在高于室温的沉积温度下，在沉积室中的基板上进行薄膜沉积。

7. 发明授权

US09165748B2 Plasma CVD method 有权
标题翻译：等离子体CVD法
公开(公告)号：US09165748B2
公开(公告)日：2015-10-20
申请号：US12855809
申请日：2010-08-13
申请人： Tomoko Takagi , Masashi Ueda
发明人： Tomoko Takagi , Masashi Ueda
IPC分类号： H01J37/32 , C23C16/509 , H01L21/306
CPC分类号： H01J37/321 , C23C16/509 , H01J37/3211 , H01J37/32119 , H01J37/32128 , H01J37/32137 , H01J37/32146 , H01J37/32155 , H01J37/32165 , H01J37/32174 , H01J37/32183 , H01J37/32541 , H01J37/32559
摘要： A plasma CVD method uses an electrode array in a reaction chamber, the electrode array including a plurality of inductively coupled electrodes, each electrode being folded back at the center so that each electrode is substantially U-shaped with two parallel straight portions, the electrodes are arranged such that all of the parallel straight portions are arranged parallel to each other in a common plane, each of the electrodes having at least a portion with a diameter of 10 mm or less, and a phase controlled power supply for feeding high frequency power to the feeding portions so as to establish a standing wave of a half wavelength or natural number multiple of a half wavelength between a feeding portion and a folded back portion and between a grounded portion and the folded back portion, and is controlled to have a phase difference between adjacent two feeding portions.
摘要翻译：等离子体CVD法在反应室中使用电极阵列，电极阵列包括多个电感耦合电极，每个电极在中心折回，使得每个电极基本上为U形，具有两个平行的直线部分，电极为被布置为使得所有平行的直线部分在公共平面中彼此平行地布置，每个电极具有至少一个直径为10mm或更小的部分，以及用于将高频功率馈送到馈送部分，以便在馈送部分和折回部分之间以及在接地部分和折回部分之间建立半波长或自然数倍的半波长的驻波，并且被控制为具有相位差在相邻的两个进给部分之间。

8. 发明申请

US20090314349A1 Microcrystalline Silicon Film Forming Method and Solar Cell 审中-公开
标题翻译：微晶硅薄膜成型方法和太阳能电池
公开(公告)号：US20090314349A1
公开(公告)日：2009-12-24
申请号：US12295250
申请日：2007-03-29
申请人： Masashi Ueda , Tomoko Takagi , Norikazu Itou
发明人： Masashi Ueda , Tomoko Takagi , Norikazu Itou
IPC分类号： H01L31/036 , H01L29/04
CPC分类号： C23C16/24 , C23C16/509 , H01L31/1804 , H01L31/1824 , Y02E10/545 , Y02E10/547 , Y02P70/521
摘要： Object of this invention is to provide a plasma CVD method capable of forming a microcrystalline silicon film at low hydrogen gas flow rate, thereby providing a low-cost microcrystalline silicon solar cell.In the plasma CVD method forming the microcrystalline silicon film, plural antennas are arranged to form an antenna array structure in a vacuum chamber. One end of each antenna is connected to a high frequency power source and anther end is grounded. Substrates are placed facing the antenna arrays, and the substrate temperature is kept between 150 and 250° C. Plasma is generated by introducing gas mixture of hydrogen and silane to the chamber, and by introducing high frequency power to the antennas. When hydrogen/silane gas flow ratio is controlled in the range from 1 to 10, microcrystalline silicon films are formed on the substrates with the ratio Ic/Ia between 2 and 6, whereas Ic and Ia are the Raman scattering intensity at around 520 cm−1 and at around 480 cm−1, related to crystalline silicon and amorphous silicon, respectively
摘要翻译：本发明的目的是提供能够以低氢气流速形成微晶硅膜的等离子体CVD方法，从而提供低成本的微晶硅太阳能电池。在形成微晶硅膜的等离子体CVD法中，布置多个天线以在真空室中形成天线阵列结构。每个天线的一端连接到高频电源，另一端接地。衬底被放置成面向天线阵列，并且衬底温度保持在150和250℃之间。通过将氢气和硅烷的气体混合物引入腔室并通过向天线引入高频功率来产生等离子体。当氢/硅烷气体流量比控制在1到10的范围内时，微晶硅膜以2/6的比例Ic / Ia形成在基片上，而Ic和Ia是在520cm -1处的拉曼散射强度， 1和约480cm -1，分别与晶体硅和非晶硅相关

9. 发明授权

US06719876B1 Internal electrode type plasma processing apparatus and plasma processing method 有权
标题翻译：内部电极型等离子体处理装置和等离子体处理方法
公开(公告)号：US06719876B1
公开(公告)日：2004-04-13
申请号：US09830879
申请日：2001-05-02
申请人： Masashi Ueda , Tomoko Takagi
发明人： Masashi Ueda , Tomoko Takagi
IPC分类号： H05H100
CPC分类号： H01J37/32082 , C23C16/509 , H01J37/32541
摘要： A plasma processing apparatus is of an internal electrode type, and an inductive coupling type electrode arranged facing a substrate has a shape formed by bending back a conductor at its central portion. A high frequency power is supplied to an end of the electrode so that a standing wave of half wavelength are produced at straight portions formed by bending back the electrode to make an antinode there and thus a plasma discharge is generated around the electrode. The controlled standing waves with its antinodes positively generated at the straight portions of the electrode are effectively used.
摘要翻译：等离子体处理装置是内部电极型，并且面向基板布置的电感耦合型电极具有通过在其中心部分弯曲导体而形成的形状。向电极的端部供给高频电力，使得通过使电极弯曲而形成的直线部分产生半波长的驻波，从而在那里形成波腹，从而在电极周围产生等离子体放电。有效地使用在电极的直线部分积极产生其波腹的受控驻波。

10. 发明申请

US20060206629A1 Peripheral, peripheral control method, peripheral control system, memory medium for storing peripheral control program, and peripheral control program product 失效
标题翻译：外围设备，外设控制方法，外设控制系统，存储外围设备控制程序的存储介质以及外围控制程序产品
公开(公告)号：US20060206629A1
公开(公告)日：2006-09-14
申请号：US11417161
申请日：2006-05-04
申请人： Yasuhiko Sasaki , Tomoaki Endoh , Mamoru Osada , Takayuki Matsuo , Takashi Inoue , Naoko Shimotai , Tomoko Takagi
发明人： Yasuhiko Sasaki , Tomoaki Endoh , Mamoru Osada , Takayuki Matsuo , Takashi Inoue , Naoko Shimotai , Tomoko Takagi
IPC分类号： G06F3/00
CPC分类号： H04N1/00204 , H04N1/00957 , H04N1/00973 , H04N1/32502 , H04N1/32512 , H04N2201/0039 , H04N2201/0094 , H04N2201/3212
摘要： An object of the present invention is to provide a multi-function peripheral which is easy for a user to operate. To achieve the object, according to the present invention, there is provided a peripheral connected to an information processing apparatus, which inputs and analyzes a job script constituted of packet data from the information processing apparatus, and subsequently generates an appropriate job file in accordance with the content of the job script.
摘要翻译：本发明的目的是提供一种用户操作容易的多功能外围设备。为了实现该目的，根据本发明，提供了一种连接到信息处理设备的外围设备，其输入和分析来自信息处理设备的由分组数据构成的作业脚本，并且随后根据作业脚本的内容。

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