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1. 发明申请

US20080079664A1 Plasma Display Device 失效
标题翻译：等离子显示装置
公开(公告)号：US20080079664A1
公开(公告)日：2008-04-03
申请号：US11632717
申请日：2005-07-05
申请人： Satoshi Ikeda , Yoshinori Yamada , Katsumi Adachi , Mikihiko Nishitani , Masashi Goto
发明人： Satoshi Ikeda , Yoshinori Yamada , Katsumi Adachi , Mikihiko Nishitani , Masashi Goto
IPC分类号： G09G3/28
CPC分类号： G09G3/288 , G09G3/294 , G09G2330/028 , G09G2360/16
摘要： In a plasma display device, a lighting rate is calculated from a video signal input in a plasma display device, and an output current of DC-DC converter (140), which is the same as a discharge current in a sustain period corresponding to the lighting rate, is synchronized with a generation timing of discharge current. With such a configuration, even if discharge current in the sustain period of each subfield is rapidly changed, a sustain pulse voltage can be kept constant.
摘要翻译：在等离子体显示装置中，从等离子体显示装置中输入的视频信号和与对应于等离子体显示装置的维持期间的放电电流相同的DC-DC转换器（140）的输出电流来计算点亮率照明率与放电电流的产生定时同步。通过这样的结构，即使各子场的维持期间的放电电流迅速变化，维持脉冲电压也能保持恒定。

2. 发明申请

US20070052348A1 Plasma display panel 审中-公开
标题翻译：等离子显示面板
公开(公告)号：US20070052348A1
公开(公告)日：2007-03-08
申请号：US10576671
申请日：2004-10-28
申请人： Masashi Goto , Mikihiko Nishitani , Katsumi Adachi , Yoshinori Yamada , Satoshi Ikeda
发明人： Masashi Goto , Mikihiko Nishitani , Katsumi Adachi , Yoshinori Yamada , Satoshi Ikeda
IPC分类号： H01J1/62
CPC分类号： H01J11/24 , H01J11/12 , H01J2211/245
摘要： The present invention is a plasma display panel in which a plurality of pairs of display electrodes extending in a row direction are disposed on a surface of a first substrate and a plurality of discharge cells are formed along each pair of display electrodes, wherein, at least within each discharge cell, each display electrode of the pair of display electrodes comprises a bus line and a band-shaped electrode member that is electrically connected to the bus line, the band-shaped electrode member extending in the row direction and being disposed at least mainly on a same side of the bus line as a gap between the pair of display electrodes, and each band-shaped electrode member has at least one cut-out formed from a gap-side edge towards the bus line, each cut-out having a length that is shorter than a distance between the gap-side edge and the bus line. When the plasma display panel is driven, peaks in electric field intensity are respectively formed in the discharge cell in regions of the electrode member on both sides of the cut-outs. Here, The display electrodes can be constructed from bus lines and transparent electrodes both extending in the row direction, and the band-shaped electrode member can be a transparent electrode.
摘要翻译：本发明是一种等离子体显示面板，其中沿着行方向延伸的多对显示电极设置在第一基板的表面上，并且沿着每对显示电极形成多个放电单元，其中至少在每个放电单元内，一对显示电极的每个显示电极包括母线和与母线电连接的带状电极构件，带状电极构件沿行方向延伸并且至少设置主要在总线的同一侧作为一对显示电极之间的间隙，并且每个带状电极构件具有从间隙侧边缘朝向总线形成的至少一个切口，每个切口具有长度短于间隙侧边缘和总线之间的距离。当驱动等离子体显示面板时，在切口两侧的电极构件的区域中，在放电单元中分别形成有电场强度的峰值。这里，显示电极可以由沿行方向延伸的总线线路和透明电极构成，带状电极部件也可以是透明电极。

3. 发明授权

US07710356B2 Plasma display device 失效
标题翻译：等离子显示装置
公开(公告)号：US07710356B2
公开(公告)日：2010-05-04
申请号：US11632717
申请日：2005-07-05
申请人： Satoshi Ikeda , Yoshinori Yamada , Katsumi Adachi , Mikihiko Nishitani , Masashi Goto
发明人： Satoshi Ikeda , Yoshinori Yamada , Katsumi Adachi , Mikihiko Nishitani , Masashi Goto
IPC分类号： G09G3/28
CPC分类号： G09G3/288 , G09G3/294 , G09G2330/028 , G09G2360/16
摘要： A lighting rate is calculated from a video signal input in a plasma display device, and an output current of DC-DC converter, which is the same as a discharge current in a sustain period corresponding to the lighting rate, is synchronized with a generation timing of discharge current. With such a configuration, even if discharge current in the sustain period of each subfield is rapidly changed, a sustain pulse voltage can be kept constant.
摘要翻译：从等离子体显示装置中输入的视频信号计算照明率，与发光时间对应的维持期间的放电电流相同的DC-DC转换器的输出电流与发生定时同步的放电电流。通过这样的结构，即使各子场的维持期间的放电电流迅速变化，维持脉冲电压也能保持恒定。

4. 发明申请

US20070029908A1 Plasma display panel 审中-公开
标题翻译：等离子显示面板
公开(公告)号：US20070029908A1
公开(公告)日：2007-02-08
申请号：US10576213
申请日：2004-10-28
申请人： Masashi Goto , Mikihiko Nishitani , Katsumi Adachi , Yoshinori Yamada , Satoshi Ikeda
发明人： Masashi Goto , Mikihiko Nishitani , Katsumi Adachi , Yoshinori Yamada , Satoshi Ikeda
IPC分类号： H01J21/10
CPC分类号： H01J11/24 , H01J11/12 , H01J2211/245
摘要： A plasma display panel in which a plurality of pairs of display electrodes extending in a row direction are aligned on a surface of a first substrate, a plurality of address electrodes extending in a column direction are disposed in a stripe pattern on a surface of a second substrate, the first and second substrates are disposed opposite each other so that the pairs of display electrodes and the address electrodes cross over sandwiching discharge space therebetween, and a discharge cell is formed corresponding to each crossover portion. The pairs of display electrodes are composed of a metallic material, each display electrode of each pair of display electrodes includes a base part extending in the row direction and a plurality of opposing parts extending from the base part into a discharge interval between the each pair of display electrodes. In each discharge cell, at least two discharge starting gaps are formed, each discharge starting gap existing between opposing parts that respectively belong each of the pair display electrodes and being at least partially over the address electrode. Discharge space exists between the each discharge starting gap and the address electrode, and peaks in electric field intensity are formed at each of the opposing parts.
摘要翻译：一种等离子体显示面板，其中沿行方向延伸的多对显示电极在第一基板的表面上排列，沿列方向延伸的多个寻址电极以条纹图案设置在第二基板的表面上基板，第一基板和第二基板彼此相对布置，使得成对的显示电极和寻址电极在其间夹着放电空间交叉，并且对应于每个交叉部分形成放电单元。这些显示电极对由金属材料构成，每对显示电极的每个显示电极包括沿行方向延伸的基部和从基部延伸到每对显示电极之间的放电间隔的多个相对部分显示电极。在每个放电单元中，形成至少两个放电起始间隙，每个放电起始间隙存在于分别对应于每对显示电极并且至少部分地位于寻址电极之间的相对部分之间。在每个放电起始间隙和寻址电极之间存在放电空间，并且在每个相对部分处形成电场强度的峰值。

5. 发明授权

US06806498B2 Semiconductor thin film, method and apparatus for producing the same, and semiconductor device and method of producing the same 失效
标题翻译：半导体薄膜，其制造方法和装置以及半导体装置及其制造方法
公开(公告)号：US06806498B2
公开(公告)日：2004-10-19
申请号：US10218310
申请日：2002-08-15
申请人： Yoshinao Taketomi , Keizaburo Kuramasu , Masumi Izuchi , Hiroshi Satani , Hiroshi Tsutsu , Hikaru Nishitani , Mikihiko Nishitani , Masashi Goto , Yoshiko Mino
发明人： Yoshinao Taketomi , Keizaburo Kuramasu , Masumi Izuchi , Hiroshi Satani , Hiroshi Tsutsu , Hikaru Nishitani , Mikihiko Nishitani , Masashi Goto , Yoshiko Mino
IPC分类号： H01L31036
CPC分类号： H01L21/02532 , H01L21/02609 , H01L21/02683 , H01L21/02686 , H01L21/02689 , H01L21/02691 , H01L21/2026 , H01L21/316 , H01L29/66757 , H01L29/78675 , H01L29/78696
摘要： In a polycrystalline silicon thin film transistor, a semiconductor device having a high field effect mobility is achieved by increasing a grain size of a silicon thin film. First, an insulation layer having a two-layer structure is formed on a transparent insulated substrate 201. In the insulation layer, a lower insulation layer 202, which is in contact with the transparent insulating substrate 201, is made to have a higher thermal conductivity than an upper insulation layer 203. Thereafter, the upper insulation layer 203is patterned so that a plurality of stripes are formed thereon. Subsequently, an amorphous silicon thin film 204 is formed on the patterned insulation layer, and the insulation layer is irradiated with a laser light scanning in a direction parallel to the stripe pattern on the upper insulation layer 203. Thus, the amorphous silicon thin film 203 is formed into a polycrystalline silicon thin film 210.
摘要翻译：在多晶硅薄膜晶体管中，通过增加硅薄膜的晶粒尺寸来实现具有高场效应迁移率的半导体器件。首先，在透明绝缘基板201上形成具有双层结构的绝缘层。在绝缘层中，与透明绝缘基板201接触的下绝缘层202被制成具有较高的热导率之后，上绝缘层203被图案化，从而在其上形成多个条纹。随后，在图案化绝缘层上形成非晶硅薄膜204，并且在上绝缘层203上沿与平行于条纹图案的方向扫描的激光照射绝缘层。因此，非晶硅薄膜203 形成多晶硅薄膜210。

6. 发明授权

US06528397B1 Semiconductor thin film, method of producing the same, apparatus for producing the same, semiconductor device and method of producing the same 失效
标题翻译：半导体薄膜，其制造方法，其制造方法，半导体装置及其制造方法
公开(公告)号：US06528397B1
公开(公告)日：2003-03-04
申请号：US09581768
申请日：2000-06-16
申请人： Yoshinao Taketomi , Keizaburo Kuramasu , Masumi Izuchi , Hiroshi Satani , Hiroshi Tsutsu , Hikaru Nishitani , Mikihiko Nishitani , Masashi Goto , Yoshiko MIno
发明人： Yoshinao Taketomi , Keizaburo Kuramasu , Masumi Izuchi , Hiroshi Satani , Hiroshi Tsutsu , Hikaru Nishitani , Mikihiko Nishitani , Masashi Goto , Yoshiko MIno
IPC分类号： H01L2136
CPC分类号： H01L21/02532 , H01L21/02609 , H01L21/02683 , H01L21/02686 , H01L21/02689 , H01L21/02691 , H01L21/2026 , H01L21/316 , H01L29/66757 , H01L29/78675 , H01L29/78696
摘要： In a polycrystalline silicon thin film transistor, a semiconductor device having a high field effect mobility is achieved by increasing a grain size of a silicon thin film. First, an insulation layer having a two-layer structure is formed on a transparent insulated substrate 201. In the insulation layer, a lower insulation layer 202, which is in contact with the transparent insulating substrate 201, is made to have a higher thermal conductivity than an upper insulation layer 203. Thereafter, the upper insulation layer 203 is patterned so that a plurality of stripes are formed thereon. Subsequently, an amorphous silicon thin film 204 is formed on the patterned insulation layer, and the insulation layer is irradiated with a laser light scanning in a direction parallel to the stripe pattern on the upper insulation layer 203. Thus, the amorphous silicon thin film 203 is formed into a polycrystalline silicon thin film 210.
摘要翻译：在多晶硅薄膜晶体管中，通过增加硅薄膜的晶粒尺寸来实现具有高场效应迁移率的半导体器件。首先，在透明绝缘基板201上形成具有双层结构的绝缘层。在绝缘层中，与透明绝缘基板201接触的下绝缘层202被制成具有较高的热导率之后，上绝缘层203被图案化，从而在其上形成多个条纹。随后，在图案化绝缘层上形成非晶硅薄膜204，并且在上绝缘层203上沿与平行于条纹图案的方向扫描的激光照射绝缘层。因此，非晶硅薄膜203 形成多晶硅薄膜210。

7. 发明授权

US06846728B2 Semiconductor thin film, semiconductor device employing the same, methods for manufacturing the same and device for manufacturing a semiconductor thin film 失效
标题翻译：半导体薄膜，采用该半导体薄膜的半导体器件，其制造方法以及半导体薄膜的制造装置
公开(公告)号：US06846728B2
公开(公告)日：2005-01-25
申请号：US10379539
申请日：2003-03-06
申请人： Masashi Goto , Mikihiko Nishitani , Masaharu Terauchi
发明人： Masashi Goto , Mikihiko Nishitani , Masaharu Terauchi
IPC分类号： G02F1/136 , C23C16/509 , C23C16/511 , G02F1/1368 , H01L21/20 , H01L21/205 , H01L21/336 , H01L29/786 , H01L31/04 , H01L21/36
CPC分类号： H01L29/66765 , H01L21/02491 , H01L21/02532 , H01L21/0262 , H01L21/02672 , H01L29/78678 , Y02E10/545 , Y02E10/546
摘要： By applying ion or optical energy or catalytic effects at the time of depositing a crystalline silicon thin film, improvements in crystallinity of the crystalline silicon thin film in proximities of an interface of a substrate or smoothing of its surface may be achieved. With this arrangement, it is possible to achieve improvements in crystallinity of the crystalline silicon film that is formed in a low temperature condition through CVD method and to prevent concaves and convexes from being formed on its surface or to prevent oxidation of grain fields, and it is accordingly possible to provide a thin film transistor, a semiconductor device such as a solar cell and methods for manufacturing these that exhibit superior characteristics and reliability.
摘要翻译：通过在沉积晶体硅薄膜时施加离子或光能或催化作用，可以实现晶体硅薄膜在基底界面附近或其表面平滑度附近的结晶度的改善。通过这种布置，可以通过CVD法在低温条件下形成的结晶硅膜的结晶度得到改善，并且防止在其表面上形成凹凸或防止晶粒的氧化，并且因此可以提供薄膜晶体管，诸如太阳能电池的半导体器件及其制造方法，其具有优异的特性和可靠性。

8. 发明授权

US06913986B2 Method and apparatus for fabricating a thin film and thin film transistor and method of fabricating same 有权
标题翻译：用于制造薄膜和薄膜晶体管的方法和装置及其制造方法
公开(公告)号：US06913986B2
公开(公告)日：2005-07-05
申请号：US10240570
申请日：2001-04-04
申请人： Mikihiko Nishitani , Masashi Goto
发明人： Mikihiko Nishitani , Masashi Goto
IPC分类号： G02F1/1368 , H01L21/20 , H01L21/205 , H01L21/00
CPC分类号： H01L21/02422 , G02F1/1368 , H01L21/02532 , H01L21/0262
摘要： A method of fabricating a thin film includes: forming, on a substrate, a thin film with film properties varying from region to region on the substrate, by selectively heating the substrate; and patterning the thin film in a predetermined pattern by etching the thin film to selectively remove only a portion of the thin film with specified film properties. The method reduces the fabrication process temperature and the number of fabrication steps, while inhibiting degradation in device performance.
摘要翻译：一种制造薄膜的方法包括：通过选择性地加热所述衬底，在衬底上形成膜性质在衬底上的区域之间变化的薄膜; 并通过蚀刻薄膜以预定图案形成薄膜，以选择性地仅去除具有特定膜特性的薄膜的一部分。该方法降低了制造工艺温度和制造步骤的数量，同时抑制了器件性能的降低。

9. 发明授权

US06548380B1 Semiconductor thin film, semiconductor device employing the same, methods for manufacturing the same and device for manufacturing a semiconductor thin film 有权
标题翻译：半导体薄膜，采用该半导体薄膜的半导体器件，其制造方法以及半导体薄膜的制造装置
公开(公告)号：US06548380B1
公开(公告)日：2003-04-15
申请号：US09658667
申请日：2000-09-08
申请人： Masashi Goto , Mikihiko Nishitani , Masaharu Terauchi
发明人： Masashi Goto , Mikihiko Nishitani , Masaharu Terauchi
IPC分类号： H01L2120
CPC分类号： H01L29/66765 , H01L21/02491 , H01L21/02532 , H01L21/0262 , H01L21/02672 , H01L29/78678 , Y02E10/545 , Y02E10/546
摘要： By applying ion or optical energy or catalytic effects at the time of depositing a crystalline silicon thin film, improvements in crystallinity of the crystalline silicon thin film in proximities of an interface of a substrate or smoothing of its surface may be achieved. With this arrangement, it is possible to achieve improvements in crystallinity of the crystalline silicon film that is formed in a low temperature condition through CVD method and to prevent concaves and convexes from being formed on its surface or to prevent oxidation of grain fields, and it is accordingly possible to provide a thin film transistor, a semiconductor device such as a solar cell and methods for manufacturing these that exhibit superior characteristics and reliability.
摘要翻译：通过在沉积晶体硅薄膜时施加离子或光能或催化作用，可以实现晶体硅薄膜在基底界面附近或其表面平滑度附近的结晶度的改善。通过这种布置，可以通过CVD法在低温条件下形成的结晶硅膜的结晶度得到改善，并且防止在其表面上形成凹凸或防止晶粒的氧化，并且因此可以提供薄膜晶体管，诸如太阳能电池的半导体器件及其制造方法，其具有优异的特性和可靠性。

10. 发明授权

US08018154B2 Plasma display panel and its manufacturing method 失效
标题翻译：等离子显示面板及其制造方法
公开(公告)号：US08018154B2
公开(公告)日：2011-09-13
申请号：US12297200
申请日：2007-04-27
申请人： Yusuke Fukui , Takuji Tsujita , Jun Hashimoto , Hikaru Nishitani , Masaharu Terauchi , Mikihiko Nishitani
发明人： Yusuke Fukui , Takuji Tsujita , Jun Hashimoto , Hikaru Nishitani , Masaharu Terauchi , Mikihiko Nishitani
IPC分类号： H01J17/49
CPC分类号： H01J11/40 , H01J9/02 , H01J11/12 , H01J11/38
摘要： A PDP can be driven at low voltage while having a charge retention property in a protection layer, and has favorable image display properties. Additionally, the PDP prevents the occurrence of discharge delay and realizes high-quality image display by performing favorable high-speed driving in a high definition PDP. To achieve this, a surface layer (8) is formed to a film thickness of 1 μm in an oxygen atmosphere having an oxygen partial pressure of 0.025 Pa or more, the surface layer (8) is provided on a face of a dielectric layer (7) on a discharge space side. Furthermore, MgO particles (16) are dispersed on a surface of the surface layer (8). The surface layer (8) has the effects of protecting the dielectric layer (7) from ion bombardment during discharge, reducing the firing voltage, and preventing excessive electron loss. Also, the MgO particles (16) have a high initial electron emission property.
摘要翻译： PDP可以在低电压下驱动，同时在保护层中具有电荷保持性，并且具有良好的图像显示性能。此外，PDP通过在高清晰度PDP中执行有利的高速驱动来防止放电延迟的发生并实现高质量的图像显示。为了实现这一点，在氧分压为0.025Pa以上的氧气氛中，表面层（8）形成为1μm的膜厚，表面层（8）设置在电介质层的表面（ 7）放电空间侧。此外，MgO颗粒（16）分散在表面层（8）的表面上。表面层（8）具有在放电期间保护电介质层（7）免受离子轰击的作用，降低了点火电压，并防止了电子损失过量。此外，MgO粒子（16）具有高的初始电子发射特性。

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