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1. 发明申请

US20080240190A1 METHOD OF MANUFACTURING SEMICONDUCTOR LASER, SEMICONDUCTOR LASER, OPTICAL PICKUP, OPTICAL DISK DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND METHOD OF GROWING NITRIDE TYPE GROUP III-V COMPOUND SEMICONDUCTOR LAYER 有权
标题翻译：半导体激光器的制造方法，半导体激光器，光学拾取器，光学盘装置，制造半导体器件的方法，半导体器件以及生长氮化物III-V族化合物半导体层的方法
公开(公告)号：US20080240190A1
公开(公告)日：2008-10-02
申请号：US12038329
申请日：2008-02-27
申请人： Masaru Kuramoto , Eiji Nakayama , Yoshitsugu Ooizumi
发明人： Masaru Kuramoto , Eiji Nakayama , Yoshitsugu Ooizumi
IPC分类号： H01S5/22 , H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , G11B7/125 , H01S5/106 , H01S5/1064 , H01S5/164 , H01S5/2077 , H01S5/2272
摘要： A method of manufacturing a semiconductor laser having an end face window structure, by growing over a substrate a nitride type Group III-V compound semiconductor layer including an active layer including a nitride type Group III-V compound semiconductor containing at least In and Ga, the method includes the steps of: forming a mask including an insulating film over the substrate, at least in the vicinity of the position of forming the end face window structure; and growing the nitride type Group III-V compound semiconductor layer including the active layer over a part, not covered with the mask, of the substrate.
摘要翻译：一种制造具有端面窗结构的半导体激光器的方法，通过在衬底上生长包括含有至少包含In和Ga的氮化物型III-V族化合物半导体的有源层的氮化物型III-V族化合物半导体层，该方法包括以下步骤：至少在形成端面窗结构的位置附近，在衬底上形成包括绝缘膜的掩模; 以及在衬底的一部分未被掩模覆盖的部分上生长包括有源层的氮化物型III-V族化合物半导体层。

2. 发明授权

US08822975B2 Method of manufacturing semiconductor laser, semiconductor laser, optical pickup, optical disk device, method of manufacturing semiconductor device, semiconductor device, and method of growing nitride type Group III-V compound semiconductor layer 有权
标题翻译：制造半导体激光器，半导体激光器，光学拾取器，光盘装置，制造半导体器件的方法，半导体器件以及生长氮化物类型III-V族化合物半导体层的方法
公开(公告)号：US08822975B2
公开(公告)日：2014-09-02
申请号：US13451880
申请日：2012-04-20
申请人： Masaru Kuramoto , Eiji Nakayama , Yoshitsugu Ohizumi
发明人： Masaru Kuramoto , Eiji Nakayama , Yoshitsugu Ohizumi
IPC分类号： H01L29/06
CPC分类号： H01S5/34333 , B82Y20/00 , G11B7/125 , H01S5/106 , H01S5/1064 , H01S5/164 , H01S5/2077 , H01S5/2272
摘要： A method of manufacturing a semiconductor laser having an end face window structure, by growing over a substrate a nitride type Group III-V compound semiconductor layer including an active layer including a nitride type Group III-V compound semiconductor containing at least In and Ga, the method includes the steps of: forming a mask including an insulating film over the substrate, at least in the vicinity of the position of forming the end face window structure; and growing the nitride type Group III-V compound semiconductor layer including the active layer over a part, not covered with the mask, of the substrate.
摘要翻译：一种制造具有端面窗结构的半导体激光器的方法，通过在衬底上生长包括含有至少包含In和Ga的氮化物型III-V族化合物半导体的有源层的氮化物型III-V族化合物半导体层，该方法包括以下步骤：至少在形成端面窗结构的位置附近，在衬底上形成包括绝缘膜的掩模; 以及在衬底的一部分未被掩模覆盖的部分上生长包括有源层的氮化物型III-V族化合物半导体层。

3. 发明授权

US08530255B2 Method of manufacturing semiconductor laser, semiconductor laser, optical pickup, optical disk device, method of manufacturing semiconductor device, semiconductor device, and method of growing nitride type group III-V compound semiconductor layer 有权
标题翻译：制造半导体激光器的方法，半导体激光器，光学拾取器，光盘装置，制造半导体器件的方法，半导体器件以及生长氮化物型III-V族化合物半导体层的方法
公开(公告)号：US08530255B2
公开(公告)日：2013-09-10
申请号：US12180915
申请日：2008-07-28
申请人： Masaru Kuramoto , Eiji Nakayama , Yoshitsugu Ohizumi , Tsuyoshi Fujimoto
发明人： Masaru Kuramoto , Eiji Nakayama , Yoshitsugu Ohizumi , Tsuyoshi Fujimoto
IPC分类号： H01L21/00
CPC分类号： H01S5/164 , B82Y20/00 , H01S5/0425 , H01S5/106 , H01S5/1064 , H01S5/2077 , H01S5/22 , H01S5/2214 , H01S5/2272 , H01S5/34333
摘要： A method of manufacturing a semiconductor laser having an end face window structure, by growing over a substrate a nitride type Group III-V compound semiconductor layer including an active layer including a nitride type Group III-V compound semiconductor containing at least In and Ga. The method includes the steps of forming a mask including an insulating film over the substrate, at least in the vicinity of the position of forming the end face window structure; and growing the nitride type Group III-V compound semiconductor layer including the active layer over a part, not covered with the mask, of the substrate.
摘要翻译：一种制造具有端面窗结构的半导体激光器的方法，通过在衬底上生长包括至少包含In和Ga的包含氮化物III-V族化合物半导体的有源层的氮化物型III-V族化合物半导体层。该方法包括以下步骤：至少在形成端面窗结构的位置附近形成包括绝缘膜在内的掩模; 以及在衬底的一部分未被掩模覆盖的部分上生长包括有源层的氮化物型III-V族化合物半导体层。

4. 发明申请

US20120207185A1 METHOD OF MANUFACTURING SEMICONDUCTOR LASER, SEMICONDUCTOR LASER, OPTICAL PICKUP, OPTICAL DISK DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND METHOD OF GROWING NITRIDE TYPE GROUP III-V COMPOUND SEMICONDUCTOR LAYER 有权
标题翻译：半导体激光器的制造方法，半导体激光器，光学拾取器，光学盘装置，制造半导体器件的方法，半导体器件以及生长氮化物III-V族化合物半导体层的方法
公开(公告)号：US20120207185A1
公开(公告)日：2012-08-16
申请号：US13451880
申请日：2012-04-20
申请人： Masaru Kuramoto , Eiji Nakayama , Yoshitsugu Ohizumi
发明人： Masaru Kuramoto , Eiji Nakayama , Yoshitsugu Ohizumi
IPC分类号： H01S5/32
CPC分类号： H01S5/34333 , B82Y20/00 , G11B7/125 , H01S5/106 , H01S5/1064 , H01S5/164 , H01S5/2077 , H01S5/2272
摘要： A method of manufacturing a semiconductor laser having an end face window structure, by growing over a substrate a nitride type Group III-V compound semiconductor layer including an active layer including a nitride type Group III-V compound semiconductor containing at least In and Ga, the method includes the steps of: forming a mask including an insulating film over the substrate, at least in the vicinity of the position of forming the end face window structure; and growing the nitride type Group III-V compound semiconductor layer including the active layer over a part, not covered with the mask, of the substrate.
摘要翻译：一种制造具有端面窗结构的半导体激光器的方法，通过在衬底上生长包括含有至少包含In和Ga的氮化物型III-V族化合物半导体的有源层的氮化物型III-V族化合物半导体层，该方法包括以下步骤：至少在形成端面窗结构的位置附近，在衬底上形成包括绝缘膜的掩模; 以及在衬底的一部分未被掩模覆盖的部分上生长包括有源层的氮化物型III-V族化合物半导体层。

5. 发明申请

US20100151611A1 Method for manufacturing semiconductor laser 有权
标题翻译：制造半导体激光器的方法
公开(公告)号：US20100151611A1
公开(公告)日：2010-06-17
申请号：US12591286
申请日：2009-11-16
申请人： Tsuyoshi Fujimoto , Nozomi Ohashi , Masaru Kuramoto , Eiji Nakayama
发明人： Tsuyoshi Fujimoto , Nozomi Ohashi , Masaru Kuramoto , Eiji Nakayama
IPC分类号： H01L21/28
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/22
摘要： A method for manufacturing a semiconductor laser includes the steps of forming a mask layer having a stripe-shaped mask portion corresponding to a ridge stripe to be formed on a nitride-based group III-V compound semiconductor layer, etching the nitride-based group III-V compound semiconductor layer to a predetermined depth using the mask layer to form the ridge stripe, forming a resist to cover the mask layer and the nitride-based group III-V compound semiconductor layer, etching-back the resist until the stripe-shaped mask portion of the mask layer is exposed, removing the exposed mask portion of the mask layer by etching to expose the upper surface of the ridge stripe, forming a metal film on the resist and the exposed ridge stripe to form an electrode on the ridge stripe, removing the resist together with the metal film formed thereon, and removing the mask layer by etching.
摘要翻译：一种制造半导体激光器的方法包括以下步骤：形成具有对应于氮化物基III-V族化合物半导体层上形成的脊条的条形掩模部分的掩模层，蚀刻氮化物基III族 -V化合物半导体层到预定深度，使用掩模层形成脊条，形成抗蚀剂以覆盖掩模层和基于氮化物的III-V族化合物半导体层，将抗蚀剂刻蚀至条状掩模层的掩模部分被暴露，通过蚀刻去除掩模层的暴露的掩模部分以暴露脊条的上表面，在抗蚀剂和暴露的脊条上形成金属膜，以在脊条上形成电极与形成在其上的金属膜一起除去抗蚀剂，并通过蚀刻去除掩模层。

6. 发明申请

US20100080107A1 METHOD FOR PRODUCING SEMICONDUCTOR LASER, SEMICONDUCTOR LASER, OPTICAL PICKUP, AND OPTICAL DISK DRIVE 有权
标题翻译：生产半导体激光，半导体激光，光学拾取和光盘驱动的方法
公开(公告)号：US20100080107A1
公开(公告)日：2010-04-01
申请号：US12568855
申请日：2009-09-29
申请人： Rintaro Koda , Masaru Kuramoto , Eiji Nakayama , Tsuyoshi Fujimoto
发明人： Rintaro Koda , Masaru Kuramoto , Eiji Nakayama , Tsuyoshi Fujimoto
IPC分类号： G11B7/00 , H01L33/00 , H01S5/16 , H01S5/028
CPC分类号： H01S5/16 , B82Y20/00 , H01S5/168 , H01S5/2275 , H01S5/2277 , H01S5/34333
摘要： A method for producing a semiconductor laser having an edge window structure includes the steps of forming masks of insulating films on a nitride-based III-V compound semiconductor substrate including first regions and second regions periodically arranged in parallel therebetween; and growing a nitride-based III-V compound semiconductor layer in a region not covered by the masks. The first region between each two adjacent second regions has two or more positions, symmetrical with respect to a center line thereof, where laser stripes are to be formed. The masks are formed on one or both sides of each of the positions where the laser stripes are to be formed at least near a position where edge window structures are to be formed such that the masks are symmetrical with respect to the center line. The nitride-based III-V compound semiconductor layer includes an active layer containing at least indium and gallium.
摘要翻译：一种具有边缘窗结构的半导体激光器的制造方法，其特征在于，在氮化物系III-V族化合物半导体基板上形成绝缘膜的掩模的工序，所述掩模包括第一区域和第二区域，以及在未被掩模覆盖的区域中生长氮化物III-V族化合物半导体层。每个两个相邻的第二区域之间的第一区域具有相对于其中心线对称的两个或更多个位置，其中将形成激光条纹。掩模形成在每个位置的一个或两侧上，其中激光条形成至少靠近要形成边缘窗口结构的位置，使得掩模相对于中心线对称。基于氮化物的III-V族化合物半导体层包括至少含有铟和镓的活性层。

7. 发明申请

US20090034567A1 METHOD OF MANUFACTURING SEMICONDUCTOR LASER, SEMICONDUCTOR LASER, OPTICAL PICKUP, OPTICAL DISK DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND METHOD OF GROWING NITRIDE TYPE GROUP III-V COMPOUND SEMICONDUCTOR LAYER 有权
标题翻译：半导体激光器的制造方法，半导体激光器，光学拾取器，光学盘装置，制造半导体器件的方法，半导体器件以及生长氮化物III-V族化合物半导体层的方法
公开(公告)号：US20090034567A1
公开(公告)日：2009-02-05
申请号：US12180915
申请日：2008-07-28
申请人： Masaru Kuramoto , Eiji Nakayama , Yoshitsugu Ohizumi , Tsuyoshi Fujimoto
发明人： Masaru Kuramoto , Eiji Nakayama , Yoshitsugu Ohizumi , Tsuyoshi Fujimoto
IPC分类号： H01S5/30 , H01L33/00 , H01L21/20 , H01L29/20
CPC分类号： H01S5/164 , B82Y20/00 , H01S5/0425 , H01S5/106 , H01S5/1064 , H01S5/2077 , H01S5/22 , H01S5/2214 , H01S5/2272 , H01S5/34333
摘要： A method of manufacturing a semiconductor laser having an end face window structure, by growing over a substrate a nitride type Group III-V compound semiconductor layer including an active layer including a nitride type Group III-V compound semiconductor containing at least In and Ga. The method includes the steps of forming a mask including an insulating film over the substrate, at least in the vicinity of the position of forming the end face window structure; and growing the nitride type Group III-V compound semiconductor layer including the active layer over a part, not covered with the mask, of the substrate.
摘要翻译：一种制造具有端面窗结构的半导体激光器的方法，通过在衬底上生长包括至少包含In和Ga的包含氮化物III-V族化合物半导体的有源层的氮化物型III-V族化合物半导体层。该方法包括以下步骤：至少在形成端面窗结构的位置附近形成包括绝缘膜在内的掩模; 以及在衬底的一部分未被掩模覆盖的部分上生长包括有源层的氮化物型III-V族化合物半导体层。

8. 发明授权

US08896002B2 Method for producing semiconductor laser, semiconductor laser, optical pickup, and optical disk drive 有权
标题翻译：半导体激光器，半导体激光器，光学拾取器和光盘驱动器的制造方法
公开(公告)号：US08896002B2
公开(公告)日：2014-11-25
申请号：US12568855
申请日：2009-09-29
申请人： Rintaro Koda , Masaru Kuramoto , Eiji Nakayama , Tsuyoshi Fujimoto
发明人： Rintaro Koda , Masaru Kuramoto , Eiji Nakayama , Tsuyoshi Fujimoto
IPC分类号： H01L33/00 , B82Y20/00 , H01S5/323 , H01S5/227 , H01S5/16 , H01S5/343
CPC分类号： H01S5/16 , B82Y20/00 , H01S5/168 , H01S5/2275 , H01S5/2277 , H01S5/34333
摘要： A method for producing a semiconductor laser having an edge window structure includes the steps of forming masks of insulating films on a nitride-based III-V compound semiconductor substrate including first regions and second regions periodically arranged in parallel therebetween; and growing a nitride-based III-V compound semiconductor layer in a region not covered by the masks. The first region between each two adjacent second regions has two or more positions, symmetrical with respect to a center line thereof, where laser stripes are to be formed. The masks are formed on one or both sides of each of the positions where the laser stripes are to be formed at least near a position where edge window structures are to be formed such that the masks are symmetrical with respect to the center line. The nitride-based III-V compound semiconductor layer includes an active layer containing at least indium and gallium.
摘要翻译：一种具有边缘窗结构的半导体激光器的制造方法，其特征在于，在氮化物系III-V族化合物半导体基板上形成绝缘膜的掩模的工序，所述掩模包括第一区域和第二区域，以及在未被掩模覆盖的区域中生长氮化物III-V族化合物半导体层。每个两个相邻的第二区域之间的第一区域具有相对于其中心线对称的两个或更多个位置，其中将形成激光条纹。掩模形成在每个位置的一个或两侧上，其中激光条形成至少靠近要形成边缘窗口结构的位置，使得掩模相对于中心线对称。基于氮化物的III-V族化合物半导体层包括至少含有铟和镓的活性层。

9. 发明授权

US08202750B2 Method of manufacturing semiconductor device, semiconductor laser, optical pickup, and optical disk device with nitride type group III-V compound semiconductor layer 有权
标题翻译：具有氮化物型III-V族化合物半导体层的半导体器件，半导体激光器，光学拾取器和光盘器件的制造方法
公开(公告)号：US08202750B2
公开(公告)日：2012-06-19
申请号：US12038329
申请日：2008-02-27
申请人： Masaru Kuramoto , Eiji Nakayama , Yoshitsugu Ohizumi
发明人： Masaru Kuramoto , Eiji Nakayama , Yoshitsugu Ohizumi
IPC分类号： H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , G11B7/125 , H01S5/106 , H01S5/1064 , H01S5/164 , H01S5/2077 , H01S5/2272
摘要： A method of manufacturing a semiconductor laser having an end face window structure, by growing over a substrate a nitride type Group III-V compound semiconductor layer including an active layer including a nitride type Group III-V compound semiconductor containing at least In and Ga, the method includes the steps of: forming a mask including an insulating film over the substrate, at least in the vicinity of the position of forming the end face window structure; and growing the nitride type Group III-V compound semiconductor layer including the active layer over a part, not covered with the mask, of the substrate.
摘要翻译：一种制造具有端面窗结构的半导体激光器的方法，通过在衬底上生长包括含有至少包含In和Ga的氮化物型III-V族化合物半导体的有源层的氮化物型III-V族化合物半导体层，该方法包括以下步骤：至少在形成端面窗结构的位置附近，在衬底上形成包括绝缘膜的掩模; 以及在衬底的一部分未被掩模覆盖的部分上生长包括有源层的氮化物型III-V族化合物半导体层。

10. 发明授权

US07943407B2 Method for manufacturing semiconductor laser 有权
标题翻译：制造半导体激光器的方法
公开(公告)号：US07943407B2
公开(公告)日：2011-05-17
申请号：US12591286
申请日：2009-11-16
申请人： Tsuyoshi Fujimoto , Nozomi Ohashi , Masaru Kuramoto , Eiji Nakayama
发明人： Tsuyoshi Fujimoto , Nozomi Ohashi , Masaru Kuramoto , Eiji Nakayama
IPC分类号： H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/22
摘要： A method for manufacturing a semiconductor laser includes the steps of forming a mask layer having a stripe-shaped mask portion corresponding to a ridge stripe to be formed on a nitride-based group III-V compound semiconductor layer, etching the nitride-based group III-V compound semiconductor layer to a predetermined depth using the mask layer to form the ridge stripe, forming a resist to cover the mask layer and the nitride-based group III-V compound semiconductor layer, etching-back the resist until the stripe-shaped mask portion of the mask layer is exposed, removing the exposed mask portion of the mask layer by etching to expose the upper surface of the ridge stripe, forming a metal film on the resist and the exposed ridge stripe to form an electrode on the ridge stripe, removing the resist together with the metal film formed thereon, and removing the mask layer by etching.
摘要翻译：一种制造半导体激光器的方法包括以下步骤：形成具有对应于氮化物基III-V族化合物半导体层上形成的脊条的条形掩模部分的掩模层，蚀刻氮化物基III族 -V化合物半导体层到预定深度，使用掩模层形成脊条，形成抗蚀剂以覆盖掩模层和基于氮化物的III-V族化合物半导体层，将抗蚀剂刻蚀至条状掩模层的掩模部分被暴露，通过蚀刻去除掩模层的暴露的掩模部分以暴露脊条的上表面，在抗蚀剂和暴露的脊条上形成金属膜，以在脊条上形成电极与形成在其上的金属膜一起除去抗蚀剂，并通过蚀刻去除掩模层。

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