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1. 发明授权

US5602415A Light receiving device with isolation regions 失效
标题翻译：具有隔离区域的光接收装置
公开(公告)号：US5602415A
公开(公告)日：1997-02-11
申请号：US458772
申请日：1995-06-02
申请人： Masaru Kubo , Naoki Fukunaga , Motohiko Yamamoto
发明人： Masaru Kubo , Naoki Fukunaga , Motohiko Yamamoto
IPC分类号： H01L27/14 , H01L27/144 , H01L31/10 , H01L31/00
CPC分类号： H01L27/1443
摘要： A light receiving device including a semiconductor substrate of a first conductivity type; a first semiconductor layer of a second conductivity type which is formed on the semiconductor substrate of the first conductivity type; and a semiconductor layer of the first conductivity type which elongates from a surface of the first semiconductor substrate of the second conductivity type to reach a surface of the semiconductor substrate of the first conductivity type, the semiconductor layer splitting the first semiconductor layer of the second conductivity type into a plurality of semiconductor regions of the second conductivity type. The portion of the semiconductor layer of the first conductivity type which overlaps with the semiconductor substrate of the first conductivity type is formed as a semiconductor region of the first conductivity type and has a high-impurity density. The semiconductor regions of the second conductivity type, and semiconductor substrate of the first conductivity type below such regions form a plurality of light detecting photodiode portions for detecting signal light. The device further includes a second semiconductor layer of the second conductivity type being buried in a part of the semiconductor substrate of the first conductivity type which constitutes each of the light detecting photodiode portions.
摘要翻译：一种光接收装置，包括第一导电类型的半导体衬底; 形成在第一导电类型的半导体衬底上的第二导电类型的第一半导体层; 以及第一导电类型的半导体层，其从第二导电类型的第一半导体衬底的表面延伸到达第一导电类型的半导体衬底的表面，半导体层将第二半导体层的第二导电率形成第二导电类型的多个半导体区域。与第一导电类型的半导体衬底重叠的第一导电类型的半导体层的部分形成为第一导电类型的半导体区域并且具有高杂质密度。第二导电类型的半导体区域和在这种区域之下的第一导电类型的半导体衬底形成用于检测信号光的多个光检测光电二极管部分。该器件还包括第二导电类型的第二半导体层，其被埋在构成每个光检测光电二极管部分的第一导电类型的半导体衬底的一部分中。

2. 发明授权

US6127715A Photodetector element containing circuit element and manufacturing method thereof 失效
标题翻译：含有检测元件的电路元件及其制造方法
公开(公告)号：US6127715A
公开(公告)日：2000-10-03
申请号：US685676
申请日：1996-07-24
申请人： Motohiko Yamamoto , Masaru Kubo
发明人： Motohiko Yamamoto , Masaru Kubo
IPC分类号： H01L27/146 , H01L27/14 , H01L27/15 , H01L31/0216 , H01L31/04 , H01L31/10 , H01L31/103 , H01L31/173 , H01L31/18 , H01S5/00 , H01L31/00 , H01L31/12
CPC分类号： H01L31/103 , H01L31/02165 , H01L31/173 , H01L31/18
摘要： Si.sub.3 N.sub.4 having high humidity resistance is used as a surface protecting insulating film covering a metal layer. At a bonding pad portion where metal layer is directly exposed, coverage is provided by anti-corrosion metal portion consisting of a titanium-tungsten alloy layer and gold layers. At a signal processing circuit portion, light intercepting structure and interconnection are provided similarly by titanium-tungsten alloy layer and gold layer. Thus humidity resistance of a photodetector element containing a circuit element is improved, and the gold layer allows direct die-bonding of a laser chip or the like. Further, since light intercepting structure and interconnection can be provided at the signal processing circuit portion simultaneously with the formation of gold layer for the bonding pad portion, the number of manufacturing steps can be reduced.
摘要翻译：使用具有高耐湿性的Si 3 N 4作为覆盖金属层的表面保护绝缘膜。在金属层直接暴露的接合焊盘部分，由钛 - 钨合金层和金层组成的防腐金属部分提供覆盖。在信号处理电路部分，类似地由钛 - 钨合金层和金层提供遮光结构和互连。因此，包含电路元件的光电检测元件的耐湿性得到改善，金层允许激光芯片等的直接芯片接合。此外，由于可以在形成用于接合焊盘部分的金层的同时在信号处理电路部分提供遮光结构和互连，因此可以减少制造步骤的数量。

3. 发明授权

US5466962A Light-receiving semiconductor device with plural buried layers 失效
标题翻译：具有多个埋层的光接收半导体器件
公开(公告)号：US5466962A
公开(公告)日：1995-11-14
申请号：US227878
申请日：1994-04-15
申请人： Motohiko Yamamoto , Masaru Kubo
发明人： Motohiko Yamamoto , Masaru Kubo
IPC分类号： H01L21/761 , C04B20/10 , H01L27/144 , H01L31/0216 , H01L31/04 , H01L31/10 , H01L27/14 , H01L31/00
CPC分类号： H01L27/1443 , C04B20/1077 , H01L31/02161
摘要： A light-receiving semiconductor device with improved light sensitivity. On a semiconductor substrate of a first conductivity type is formed a plurality of buried layers of a second conductivity type divided by a narrow dividing region. A surface semiconductor layer of the first conductivity type covers the buried layers and the substrate. A connecting semiconductor region of the second conductivity type extends from each of the plurality of the buried layers to the surface of the surface semiconductor layer. An anti-light-reflecting film formed on the surface of the surface semiconductor layer covers a region above the dividing region as well as above the plurality of buried layers. Each of the plurality of buried layers forms a light responsive element with the substrate.
摘要翻译：具有改善的光敏度的光接收半导体器件。在第一导电类型的半导体衬底上形成有被窄分割区划分的多个第二导电类型的掩埋层。第一导电类型的表面半导体层覆盖掩埋层和衬底。第二导电类型的连接半导体区域从多个掩埋层中的每一个延伸到表面半导体层的表面。形成在表面半导体层的表面上的防反射膜覆盖分割区域上方的区域以及多个掩埋层的上方。多个掩埋层中的每一个与基板形成光响应元件。

4. 发明授权

US6078707A Waveguide-photodetector, method for producing the same, waveguide usable in the waveguide-photodetector, and method for producing the same 失效
标题翻译：波导光检测器，其制造方法，可用于波导 - 光电探测器的波导管及其制造方法
公开(公告)号：US6078707A
公开(公告)日：2000-06-20
申请号：US717355
申请日：1996-09-20
申请人： Hiroyuki Yamamoto , Yoshio Yoshida , Motohiko Yamamoto , Yukio Kurata
发明人： Hiroyuki Yamamoto , Yoshio Yoshida , Motohiko Yamamoto , Yukio Kurata
IPC分类号： G02B6/12 , G02B6/122 , G02B6/42 , H01L31/0232
CPC分类号： G02B6/1228 , G02B6/12004 , G02B6/42 , H01L31/0232 , G02B2006/12195
摘要： A waveguide-photodetector includes a semiconductor substrate; a waveguide section, provided on the semiconductor substrate, for propagating light; an opto-electric converting section, provided in the semiconductor substrate, for converting the light into an electric signal; and an insulative layer provided between the semiconductor substrate and the waveguide section. The waveguide section includes at least an introducing part for introducing the light to the waveguide section, a coupling part for coupling the light introduced to the waveguide section to the opto-electric converting section, and a propagating part for propagating the light from the introducing part to the coupling part. The insulative layer includes a first region for defining a position and a shape of an impurity diffused region of the opto-electric converting section, a second region which encloses the first region and is thicker than the first region, and a step portion between the first region and the second region. The introducing part, the propagating part and the coupling part of the waveguide section are located on the first region.
摘要翻译：波导 - 光电检测器包括半导体衬底; 设置在半导体基板上的用于传播光的波导部分; 设置在半导体衬底中的用于将光转换成电信号的光电转换部; 以及设置在半导体衬底和波导部分之间的绝缘层。波导部分至少包括用于将光引入到波导部分的引导部分，用于将引入波导部分的光耦合到光电转换部分的耦合部分和用于传播来自导入部分的光的传播部分到耦合部分。绝缘层包括用于限定光电转换部分的杂质扩散区域的位置和形状的第一区域，包围第一区域并且比第一区域厚的第二区域，以及第一区域区域和第二区域。引导部分，波导部分的传播部分和耦合部分位于第一区域上。

5. 发明授权

US07304542B2 Photo-receiving amplifier element, optical pickup unit, and optical disk device 失效
标题翻译：光接收放大器元件，光学拾取单元和光盘装置
公开(公告)号：US07304542B2
公开(公告)日：2007-12-04
申请号：US11180710
申请日：2005-07-14
申请人： Motohiko Yamamoto , Takanori Okuda
发明人： Motohiko Yamamoto , Takanori Okuda
IPC分类号： H03F3/08
CPC分类号： H03F3/087 , H01L31/101
摘要： A feedback resistor of a feedback circuit included in a photo-receiving amplifier element is formed on an island region in which an electric potential is in a floating state. The island region is electrically isolated from an island region on which an element other than the feedback resistor is formed. This enables the response speed of the photo-receiving amplifier element to be increased without changing the process of the circuit or varying a resistance value of the feedback resistor in a first-stage amplifier unit.
摘要翻译：包括在光接收放大器元件中的反馈电路的反馈电阻器形成在电位处于浮置状态的岛区上。岛区域与形成有反馈电阻器以外的元件的岛区电隔离。这使得能够在不改变电路的处理或改变第一级放大器单元中的反馈电阻器的电阻值的情况下增加光接收放大器元件的响应速度。

6. 发明申请

US20060011815A1 Photo-receiving amplifier element, optical pickup unit, and optical disk device 失效
标题翻译：光接收放大器元件，光学拾取单元和光盘装置
公开(公告)号：US20060011815A1
公开(公告)日：2006-01-19
申请号：US11180710
申请日：2005-07-14
申请人： Motohiko Yamamoto , Takanori Okuda
发明人： Motohiko Yamamoto , Takanori Okuda
IPC分类号： H03F3/08
CPC分类号： H03F3/087 , H01L31/101
摘要： A feedback resistor of a feedback circuit included in a photo-receiving amplifier element is formed on an island region in which an electric potential is in a floating state. The island region is electrically isolated from an island region on which an element other than the feedback resistor is formed. This enables the response speed of the photo-receiving amplifier element to be increased without changing the process of the circuit or varying a resistance value of the feedback resistor in a first-stage amplifier unit.
摘要翻译：包括在光接收放大器元件中的反馈电路的反馈电阻器形成在电位处于浮置状态的岛区上。岛区域与形成有反馈电阻器以外的元件的岛区电隔离。这使得能够在不改变电路的处理或改变第一级放大器单元中的反馈电阻器的电阻值的情况下增加光接收放大器元件的响应速度。

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