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    • 2. 发明授权
    • Electronic element including ferroelectric substance film and method of manufacturing the same
    • 电子元件包括铁电体膜及其制造方法
    • US07427515B2
    • 2008-09-23
    • US11093202
    • 2005-03-30
    • Masao KondoKazuaki Kurihara
    • Masao KondoKazuaki Kurihara
    • H01L29/72
    • G02F1/0553H01L21/28291H01L29/516H01L29/78391
    • A laminated film structure, method of manufacturing, and a preferable electronic element using the structure. The effective polarization into the electric field can be realized in the direction of crystal axis by enhancing the crystal property and alignment property of the ferroelectric substance film formed through epitaxial growth with reference to the plane alignment of semiconductor substrate. After the yttrium stabilized zirconium film and a film of the rock salt structure are sequentially formed with epitaxial growth on a semiconductor substrate, the ferroelectric substance film of simple Perovskite structure is also formed with epitaxial growth. The ferroelectric substance film can improve the crystal property and alignment property thereof by rotating the plane for 45 degrees within the plane for the crystal axis of the yttrium stabilized zirconium.
    • 叠层膜结构,制造方法以及使用该结构的优选的电子元件。 参照半导体衬底的平面取向,通过增强通过外延生长形成的铁电体物质膜的晶体特性和取向性能,可以在晶轴的方向上实现电场的有效极化。 在半导体衬底上依次形成钇稳定的锆膜和岩盐结构的薄膜外延生长后,外延生长也形成简单的钙钛矿结构的铁电物质膜。 铁素体膜可以通过在钇稳定化锆的晶轴的平面内旋转45度的平面来提高其结晶性和取向性。
    • 7. 发明授权
    • Electronic element including ferroelectric substance film and method of manufacturing the same
    • 电子元件包括铁电体膜及其制造方法
    • US07858959B2
    • 2010-12-28
    • US12149962
    • 2008-05-12
    • Masao KondoKazuaki Kurihara
    • Masao KondoKazuaki Kurihara
    • H01L29/72
    • G02F1/0553H01L21/28291H01L29/516H01L29/78391
    • A laminated film structure, method of manufacturing, and a preferable electronic element using the structure. The effective polarization into the electric field can be realized in the direction of crystal axis by enhancing the crystal property and alignment property of the ferroelectric substance film formed through epitaxial growth with reference to the plane alignment of semiconductor substrate. After the yttrium stabilized zirconium film and a film of the rock salt structure are sequentially formed with epitaxial growth on a semiconductor substrate, the ferroelectric substance film of simple Perovskite structure is also formed with epitaxial growth. The ferroelectric substance film can improve the crystal property and alignment property thereof by rotating the plane for 45 degrees within the plane for the crystal axis of the yttrium stabilized zirconium.
    • 叠层膜结构,制造方法以及使用该结构的优选的电子元件。 参照半导体衬底的平面取向,通过增强通过外延生长形成的铁电体物质膜的晶体特性和取向性能,可以在晶轴的方向上实现电场的有效极化。 在半导体衬底上依次形成钇稳定的锆膜和岩盐结构的薄膜外延生长后,外延生长也形成简单的钙钛矿结构的铁电物质膜。 铁素体膜可以通过在钇稳定化锆的晶轴的平面内旋转45度的平面来提高其结晶性和取向性。