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1. 发明申请

US20120105488A1 IMAGE PROCESSING DEVICE, IMAGE PROCESSING SYSTEM, IMAGE PROCESSING METHOD AND PROGRAM 有权
标题翻译：图像处理设备，图像处理系统，图像处理方法和程序
公开(公告)号：US20120105488A1
公开(公告)日：2012-05-03
申请号：US13276891
申请日：2011-10-19
申请人： Masao KONDO , Kunihito Sawai , Yuichi Machida
发明人： Masao KONDO , Kunihito Sawai , Yuichi Machida
IPC分类号： G09G5/34
CPC分类号： G06F3/0488 , G06F3/0485 , G06T3/20
摘要： An image processing apparatus includes a position movement input unit configured to receive a position movement instruction from a user, a pointer movement unit configured to set a position of a pointer that moves in accordance with the instruction, and a screen movement unit configured to scroll a screen based on a relative position of the pointer with respect to a reference point of a predefined area around the pointer, the screen movement unit configured to move the predefined area to keep the pointer inside the predefined area when the pointer is at a border of the predefined area and moves towards an outside of the predefined area.
摘要翻译：图像处理装置包括：位置移动输入单元，被配置为从用户接收位置移动指令;指针移动单元，被配置为设置根据该指示移动的指针的位置;以及屏幕移动单元，基于所述指针相对于所述指示器周围的预定区域的参考点的相对位置的屏幕，所述屏幕移动单元被配置为当所述指针位于所述指针的边界处时移动所述预定区域以将所述指针保持在所述预定区域内预定区域并且朝向预定区域的外部移动。

2. 发明申请

US20110316062A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110316062A1
公开(公告)日：2011-12-29
申请号：US13151306
申请日：2011-06-02
申请人： Masao KONDO , Masatoshi MORIKAWA , Satoshi GOTO
发明人： Masao KONDO , Masatoshi MORIKAWA , Satoshi GOTO
IPC分类号： H01L29/94
CPC分类号： H01L29/93 , H04B1/48
摘要： In terms of achieving a reduction in the cost of an antenna switch, there is provided a technology capable of minimizing harmonic distortion generated in the antenna switch even when the antenna switch is particularly formed of field effect transistors formed over a silicon substrate. Between the source region and the drain region of each of a plurality of MISFETs coupled in series, a distortion compensating capacitance circuit is coupled which has a voltage dependency such that, in either of the cases where a positive voltage is applied to the drain region based on the potential of the source region and where a negative voltage is applied to the drain region based on the potential of the source region, the capacitance decreases to a value smaller than that in a state where the potential of the source region and the potential of the drain region are at the same level.
摘要翻译：在实现天线开关的成本降低方面，提供了一种能够最小化在天线开关中产生的谐波失真的技术，即使天线开关特别地由形成在硅衬底上的场效应晶体管形成。在串联耦合的多个MISFET的源极区域和漏极区域之间，耦合失真补偿电容电路，其具有电压依赖性，使得在基于漏极区域施加正电压的情况下，基于源极区域的电位，并且基于源极区域的电位将负电压施加到漏极区域，电容降低到比源极区域的电位和电位区域的电位小的值漏极区域处于相同的电平。

3. 发明申请

US20090284872A1 MAGNETIC HEAD SUPPORT AND MAGNETIC DISK DEVICE 审中-公开
标题翻译：磁头支持和磁性磁盘设备
公开(公告)号：US20090284872A1
公开(公告)日：2009-11-19
申请号：US12511401
申请日：2009-07-29
申请人： Masaharu HIDA , Shigeyoshi UMEMIYA , Masao KONDO
发明人： Masaharu HIDA , Shigeyoshi UMEMIYA , Masao KONDO
IPC分类号： G11B5/48 , G11B5/56
CPC分类号： G11B5/4826 , G11B5/5552
摘要： A magnetic head support includes a slider on which a magnetic head is mounted; a suspension that supports the slider; and a pair of piezoelectric actuators that are arranged on sides of the slider other than a side on which the magnetic head is mounted so as to be opposed to each other. The piezoelectric actuators are fixed to the suspension and the slider, and cause the slider to undergo a rotational displacement.
摘要翻译：磁头支撑件包括其上安装有磁头的滑块; 支撑滑块的悬架; 以及一对压电致动器，其布置在除了安装有磁头的一侧之外的滑块的侧面上以彼此相对。压电致动器固定到悬架和滑块上，并使滑块经受旋转位移。

4. 发明申请

US20090045470A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090045470A1
公开(公告)日：2009-02-19
申请号：US12251081
申请日：2008-10-14
申请人： Masao KONDO , Nobuyuki SUGII , Yoshinobu KIMURA
发明人： Masao KONDO , Nobuyuki SUGII , Yoshinobu KIMURA
IPC分类号： H01L29/78
CPC分类号： H01L29/7835 , H01L29/1054 , H01L29/165 , H01L29/6659 , H01L29/66659
摘要： Provided is a technology capable of suppressing a reduction in electron mobility in a channel region formed in a strained silicon layer. A p type strained silicon layer is formed over a p type silicon-germanium layer formed over a semiconductor substrate. The p type strained layer has a thickness adjusted to be thicker than the critical film thickness at which no misfit dislocation occurs. Accordingly, misfit dislocations occur in the vicinity of the interface between the p type strained silicon layer and p type silicon-germanium layer. At a position which is below the end of a gate electrode and at which misfit dislocations occur, the impurity concentration of the n type strained silicon layer and n type silicon-germanium layer is 1×1019 cm−3 or less.
摘要翻译：提供了能够抑制形成在应变硅层中的沟道区域中的电子迁移率降低的技术。在半导体衬底上形成的p型硅 - 锗层上形成p型应变硅层。 p型应变层的厚度被调整为比没有失配位错发生的临界膜厚度更厚。因此，在p型应变硅层和p型硅 - 锗层之间的界面附近出现失配位错。在低于栅电极的端部并且发生失配位错的位置处，n型应变硅层和n型硅 - 锗层的杂质浓度为1×1019 cm -3以下。

5. 发明申请

US20130002338A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 审中-公开
标题翻译：半导体集成电路设备
公开(公告)号：US20130002338A1
公开(公告)日：2013-01-03
申请号：US13606756
申请日：2012-09-07
申请人： Masao KONDO , Satoshi GOTO , Masatoshi MORIKAWA
发明人： Masao KONDO , Satoshi GOTO , Masatoshi MORIKAWA
IPC分类号： H03K17/56 , H01L29/92
CPC分类号： H01L27/0207 , H01L27/1203 , H01L28/86 , H01L29/94 , H04B1/48
摘要： SOI MOSFETs are used for the transistors for switching of an antenna switch and yet harmonic distortion is significantly reduced. Capacitance elements are respectively added to either the respective drains or gates of the transistors comprising the through MOSFET group of reception branch of the antenna switch. This makes the voltage amplitude between source and gate and that between drain and gate different from each other. As a result, the voltage dependence of source-drain parasitic capacitance becomes asymmetric with respect to the polarity of voltage. This asymmetry property produces signal distortion having similar asymmetry property. Therefore, the following can be implemented by setting it so that it has the same amplitude as that of second-harmonic waves arising from the voltage dependence of substrate capacitance and a phase opposite to that of the same: second-order harmonic distortion can be canceled out and thus second-order harmonic distortion can be reduced.
摘要翻译： SOI MOSFET用于切换天线开关的晶体管，但谐波失真明显减少。电容元件分别添加到包括天线开关的接收支路的通过MOSFET组的晶体管的相应的漏极或栅极。这使得源极和栅极之间的电压幅度以及漏极和栅极之间的电压幅度彼此不同。结果，源极 - 漏极寄生电容的电压相对于电压的极性变得不对称。该不对称性产生具有相似不对称性质的信号失真。因此，可以通过将其设置为与基板电容的电压依赖性相反的二次谐波的振幅和与其相反的相位的振幅相同的幅度来实现以下：可以取消二阶谐波失真从而可以减少二次谐波失真。

6. 发明申请

US20120133431A1 POWER AMPLIFICATION CIRCUIT HAVING TRANSFORMER 有权
标题翻译：具有变压器的功率放大电路
公开(公告)号：US20120133431A1
公开(公告)日：2012-05-31
申请号：US13367121
申请日：2012-02-06
申请人： Tsuyoshi KAWAKAMI , Akihiko FURUKAWA , Satoshi YAMAKAWA , Tetsuya IIDA , Masao KONDO , Yutaka HOSHINO
发明人： Tsuyoshi KAWAKAMI , Akihiko FURUKAWA , Satoshi YAMAKAWA , Tetsuya IIDA , Masao KONDO , Yutaka HOSHINO
IPC分类号： H03F3/45
CPC分类号： H03F3/211 , H03F1/56 , H03F3/26 , H03F2200/537 , H03F2203/21139
摘要： In order to realize a wider bandwidth of a frequency characteristic of a power amplification circuit, outputs of differential push-pull amplifiers which are matched at respectively different frequencies are combined together by secondary inductors, and the combined signal is outputted.
摘要翻译：为了实现功率放大电路的频率特性的更宽的带宽，通过二次电感器将分别以不同频率匹配的差分推挽放大器的输出组合在一起，并且输出组合信号。

7. 发明申请

US20130057343A1 HIGH-FREQUENCY POWER AMPLIFYING DEVICE 有权
标题翻译：高频功率放大器件
公开(公告)号：US20130057343A1
公开(公告)日：2013-03-07
申请号：US13557643
申请日：2012-07-25
申请人： Masao KONDO
发明人： Masao KONDO
IPC分类号： H03F3/45 , H03F3/68
CPC分类号： H03F1/0277 , H03F3/211 , H03F3/245 , H03F3/72 , H03F2200/537 , H03F2200/541
摘要： The present invention provides a high-frequency power amplifying device capable of transmitting output power at high efficiency. For example, a high-frequency power amplifying device has first and second differential amplifiers and a transformer for matching output impedances of the differential amplifiers. Between differential output nodes of the first differential amplifier, an inductor, a switch, and an inductor are coupled in series. When the second differential amplifier is in an operating state and the first differential amplifier is in a non-operating state, the switch is controlled to be on. In this case, due to “off capacitance” in transistors of a differential pair included in the first differential amplifier, impedance on the first differential amplifier side seen from both ends of primary coils becomes a high impedance state (parallel resonance state) and, equivalently, the primary coils do not exert influence on the operation of the second differential amplifier.
摘要翻译：本发明提供能够高效率地发送输出功率的高频功率放大装置。例如，高频功率放大装置具有第一和第二差分放大器和用于匹配差分放大器的输出阻抗的变压器。在第一差分放大器的差分输出节点之间，电感器，开关和电感器串联耦合。当第二差分放大器处于工作状态并且第一差分放大器处于非工作状态时，开关被控制为接通。在这种情况下，由于包含在第一差分放大器中的差动对的晶体管中的关断电容，从初级线圈的两端看到的第一差分放大器侧的阻抗成为高阻抗状态（并联谐振状态），相当于初级线圈不会对第二差分放大器的工作产生影响。

8. 发明申请

US20110018032A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110018032A1
公开(公告)日：2011-01-27
申请号：US12894609
申请日：2010-09-30
申请人： Masao KONDO , Nobuyuki Sugii , Yoshinobu Kimura
发明人： Masao KONDO , Nobuyuki Sugii , Yoshinobu Kimura
IPC分类号： H01L29/78
CPC分类号： H01L29/7835 , H01L29/1054 , H01L29/165 , H01L29/6659 , H01L29/66659
摘要： A semiconductor device is provided which is capable of suppressing a reduction in electron mobility in a channel region formed in a strained silicon layer. A strained silicon layer is formed over a p type silicon-germanium layer formed over a semiconductor substrate. The strained layer has a thickness adjusted to be thicker than the critical film thickness at which no misfit dislocation occurs. Accordingly, misfit dislocations occur in the vicinity of the interface between the strained silicon layer and silicon-germanium layer.
摘要翻译：提供一种半导体器件，其能够抑制在应变硅层中形成的沟道区域中的电子迁移率的降低。在半导体衬底上形成的p型硅 - 锗层上形成应变硅层。应变层的厚度被调整为比不发生失配位错的临界膜厚度更厚。因此，失配位错发生在应变硅层和硅 - 锗层之间的界面附近。

9. 发明申请

US20110001543A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 审中-公开
标题翻译：半导体集成电路设备
公开(公告)号：US20110001543A1
公开(公告)日：2011-01-06
申请号：US12813852
申请日：2010-06-11
申请人： Masao KONDO , Satoshi GOTO , Masatoshi MORIKAWA
发明人： Masao KONDO , Satoshi GOTO , Masatoshi MORIKAWA
IPC分类号： H03K17/56 , H01L27/12
CPC分类号： H01L27/0207 , H01L27/1203 , H01L28/86 , H01L29/94 , H04B1/48
摘要： SOI MOSFETs are used for the transistors for switching of an antenna switch and yet harmonic distortion is significantly reduced. Capacitance elements are respectively added to either the respective drains or gates of the transistors comprising the through MOSFET group of reception branch of the antenna switch. This makes the voltage amplitude between source and gate and that between drain and gate different from each other. As a result, the voltage dependence of source-drain parasitic capacitance becomes asymmetric with respect to the polarity of voltage. This asymmetry property produces signal distortion having similar asymmetry property. Therefore, the following can be implemented by setting it so that it has the same amplitude as that of second-harmonic waves arising from the voltage dependence of substrate capacitance and a phase opposite to that of the same: second-order harmonic distortion can be canceled out and thus second-order harmonic distortion can be reduced.
摘要翻译： SOI MOSFET用于切换天线开关的晶体管，但谐波失真明显减少。电容元件分别添加到包括天线开关的接收支路的通过MOSFET组的晶体管的相应的漏极或栅极。这使得源极和栅极之间以及漏极和栅极之间的电压幅度彼此不同。结果，源极 - 漏极寄生电容的电压相对于电压的极性变得不对称。该不对称性产生具有相似不对称性质的信号失真。因此，可以通过将其设置为与基板电容的电压依赖性相反的二次谐波的振幅和与其相反的相位的振幅相同的幅度来实现以下：可以取消二阶谐波失真从而可以减少二次谐波失真。

10. 发明申请

US20100117737A1 RF POWER AMPLIFIER 有权
标题翻译：射频功率放大器
公开(公告)号：US20100117737A1
公开(公告)日：2010-05-13
申请号：US12575494
申请日：2009-10-08
申请人： Masao KONDO , Yoshikuni MATSUNAGA , Kenta SEKI , Satoshi SAKURAI
发明人： Masao KONDO , Yoshikuni MATSUNAGA , Kenta SEKI , Satoshi SAKURAI
IPC分类号： H03F3/26
CPC分类号： H03F3/193 , H01L2224/0603 , H01L2224/48091 , H01L2224/48227 , H01L2224/49111 , H03F1/0272 , H03F1/565 , H03F3/195 , H03F3/21 , H03F3/245 , H03F3/26 , H03F3/265 , H03F3/45179 , H03F3/45475 , H03F3/68 , H03F2200/105 , H03F2200/222 , H03F2200/387 , H03F2200/411 , H03F2200/451 , H03F2200/465 , H03F2200/534 , H03F2200/541 , H03F2203/45481 , H03F2203/45544 , H03F2203/45621 , H03F2203/45631 , H03F2203/45731 , H01L2924/00014
摘要： A reduction is achieved in the primary-side input impedance of a transformer (voltage transformer) as an output matching circuit without involving a reduction in Q-factor. An RF power amplifier includes transistors, and a transformer as the output matching circuit. The transformer has a primary coil and a secondary coil which are magnetically coupled to each other. To the input terminals of the transistors, respective input signals are supplied. The primary coil is coupled to each of the output terminals of the transistors. From the secondary coil, an output signal is generated. The primary coil includes a first coil and a second coil which are coupled in parallel between the respective output terminals of the transistors, and each magnetically coupled to the secondary coil. By the parallel coupling of the first and second coils of the primary coil, the input impedance of the primary coil is reduced.
摘要翻译：在作为输出匹配电路的变压器（电压互感器）的初级侧输入阻抗中实现减小，而不涉及Q因子的降低。 RF功率放大器包括晶体管和变压器作为输出匹配电路。变压器具有彼此磁耦合的初级线圈和次级线圈。对于晶体管的输入端，提供相应的输入信号。初级线圈耦合到晶体管的每个输出端子。从次级线圈产生输出信号。初级线圈包括第一线圈和第二线圈，它们并联耦合在晶体管的相应输出端之间，并且每一个磁耦合到次级线圈。通过初级线圈的第一和第二线圈的并联耦合，初级线圈的输入阻抗减小。

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