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1. 发明授权

US09184559B2 Electron-beam-pumped light source 有权
标题翻译：电子束泵浦光源
公开(公告)号：US09184559B2
公开(公告)日：2015-11-10
申请号：US13884820
申请日：2011-10-11
申请人： Masanori Yamaguchi , Ken Kataoka , Tsuyoshi Maesoba , Hiroyuki Takada , Hiroshige Hata
发明人： Masanori Yamaguchi , Ken Kataoka , Tsuyoshi Maesoba , Hiroyuki Takada , Hiroshige Hata
IPC分类号： H01J1/62 , H01J63/04 , H01S5/04 , B82Y20/00 , H01J63/02 , H01J63/06 , H01S5/022 , H01S5/343
CPC分类号： H01S5/041 , B82Y20/00 , H01J63/02 , H01J63/06 , H01L2224/48091 , H01S5/02208 , H01S5/04 , H01S5/34333 , H01L2924/00014
摘要： The present invention is intended to provide an electron-beam-pumped light source capable of irradiating one surface of a semiconductor light-emitting device uniformly with an electron beam, and capable of obtaining a high light output without increasing an accelerating voltage of the electron beam and, in addition, capable of efficiently cooling the semiconductor light-emitting device. An electron-beam-pumped light source of the present invention includes: an electron beam source and a semiconductor light-emitting device excited by an electron beam emitted from the electron beam source, and characterized in that the electron beam source includes a planar electron beam emitting portion and arranged in the periphery of the semiconductor light-emitting device, and light exits from a surface through which the electron beam from the electron beam source of the semiconductor light-emitting device enters.
摘要翻译：本发明旨在提供能够以电子束均匀地照射半导体发光器件的一个表面的电子束泵浦光源，并且能够在不增加电子束的加速电压的情况下获得高的光输出并且还能够有效地冷却半导体发光器件。本发明的电子束泵浦光源包括：电子束源和由电子束源发射的电子束激发的半导体发光器件，其特征在于电子束源包括平面电子束并且配置在半导体发光元件的周围，光从半导体发光元件的电子束源的电子束入射的表面射出。

2. 发明申请

US20130322484A1 ELECTRON-BEAM-PUMPED LIGHT SOURCE 有权
标题翻译：电子束泵浦光源
公开(公告)号：US20130322484A1
公开(公告)日：2013-12-05
申请号：US13884820
申请日：2011-10-11
申请人： Masanori Yamaguchi , Ken Kataoka , Tsuyoshi Maesoba , Hiroyuki Takada , Hiroshige Hata
发明人： Masanori Yamaguchi , Ken Kataoka , Tsuyoshi Maesoba , Hiroyuki Takada , Hiroshige Hata
IPC分类号： H01S5/04
CPC分类号： H01S5/041 , B82Y20/00 , H01J63/02 , H01J63/06 , H01L2224/48091 , H01S5/02208 , H01S5/04 , H01S5/34333 , H01L2924/00014
摘要： The present invention is intended to provide an electron-beam-pumped light source capable of irradiating one surface of a semiconductor light-emitting device uniformly with an electron beam, and capable of obtaining a high light output without increasing an accelerating voltage of the electron beam and, in addition, capable of efficiently cooling the semiconductor light-emitting device. An electron-beam-pumped light source of the present invention includes: an electron beam source and a semiconductor light-emitting device excited by an electron beam emitted from the electron beam source, and characterized in that the electron beam source includes a planar electron beam emitting portion and arranged in the periphery of the semiconductor light-emitting device, and light exits from a surface through which the electron beam from the electron beam source of the semiconductor light-emitting device enters.
摘要翻译：本发明旨在提供能够以电子束均匀地照射半导体发光器件的一个表面的电子束泵浦光源，并且能够在不增加电子束的加速电压的情况下获得高的光输出并且还能够有效地冷却半导体发光器件。本发明的电子束泵浦光源包括：电子束源和由电子束源发射的电子束激发的半导体发光器件，其特征在于电子束源包括平面电子束并且配置在半导体发光元件的周围，光从半导体发光元件的电子束源的电子束入射的表面射出。

3. 发明申请

US20130075697A1 ULTRAVIOLET IRRADIATION APPARATUS 失效
标题翻译：超紫外线辐射装置
公开(公告)号：US20130075697A1
公开(公告)日：2013-03-28
申请号：US13701213
申请日：2011-05-30
申请人： Yoichi Kawakami , Mitsuru Funato , Takao Oto , Ryan Ganipan Banal , Masanori Yamaguchi , Ken Kataoka , Hiroshige Hata
发明人： Yoichi Kawakami , Mitsuru Funato , Takao Oto , Ryan Ganipan Banal , Masanori Yamaguchi , Ken Kataoka , Hiroshige Hata
IPC分类号： H01L33/04
CPC分类号： H01L33/04 , F21K9/69 , H01J61/305 , H01J63/04 , H01J63/06
摘要： Provided is a compact ultraviolet irradiation apparatus which is capable of emitting ultraviolet radiation with high efficiency.This ultraviolet irradiation apparatus includes, in a vessel, a semiconductor multi-layered. film element and an electron beam irradiation source for irradiating the semiconductor multi-layered film element with an electron beam, the vessel being hermetically sealed to have a negative internal pressure and having an ultraviolet transmitting window. Furthermore, the semiconductor multi-layered film element includes an active layer having a single quantum well structure or a multi quantum well structure of InxAlyGa1-x-yN (0≦x
摘要翻译：提供一种能够高效率地发射紫外线的小型紫外线照射装置。该紫外线照射装置在容器中包括多层的半导体。膜元件和用于用电子束照射半导体多层膜元件的电子束照射源，容器被密封以具有负的内部压力并具有紫外线透过窗口。此外，半导体多层膜元件包括具有单一量子阱结构或In x Al y Ga 1-x-y N（0＆nlE; x <1,0

4. 发明授权

US08686401B2 Ultraviolet irradiation apparatus 失效
标题翻译：紫外线照射装置
公开(公告)号：US08686401B2
公开(公告)日：2014-04-01
申请号：US13701213
申请日：2011-05-30
申请人： Yoichi Kawakami , Mitsuru Funato , Takao Oto , Ryan Ganipan Banal , Masanori Yamaguchi , Ken Kataoka , Hiroshige Hata
发明人： Yoichi Kawakami , Mitsuru Funato , Takao Oto , Ryan Ganipan Banal , Masanori Yamaguchi , Ken Kataoka , Hiroshige Hata
IPC分类号： H01L29/06
CPC分类号： H01L33/04 , F21K9/69 , H01J61/305 , H01J63/04 , H01J63/06
摘要： Provided is a compact ultraviolet irradiation apparatus which is capable of emitting ultraviolet radiation with high efficiency.This ultraviolet irradiation apparatus includes, in a vessel, a semiconductor multi-layered film element and an electron beam irradiation source for irradiating the semiconductor multi-layered film element with an electron beam, the vessel being hermetically sealed to have a negative internal pressure and having an ultraviolet transmitting window. Furthermore, the semiconductor multi-layered film element includes an active layer having a single quantum well structure or a multi quantum well structure of InxAlyGa1-x-yN (0≦x
摘要翻译：提供一种能够高效率地发射紫外线的小型紫外线照射装置。该紫外线照射装置在容器中包括用电子束照射半导体多层膜元件的半导体多层膜元件和电子束照射源，容器被气密地密封以具有负的内部压力并且具有紫外线传输窗。此外，半导体多层膜元件包括具有单一量子阱结构或In x Al y Ga 1-x-y N（0＆nlE; x <1,0

5. 发明申请

US20120161104A1 ULTRAVIOLET IRRADIATION DEVICE 审中-公开
标题翻译：超紫外线辐射装置
公开(公告)号：US20120161104A1
公开(公告)日：2012-06-28
申请号：US13392560
申请日：2010-08-03
申请人： Koichi Okamoto , Mitsuru Funato , Yoichi Kawakami , Ken Kataoka , Hiroshige Hata
发明人： Koichi Okamoto , Mitsuru Funato , Yoichi Kawakami , Ken Kataoka , Hiroshige Hata
IPC分类号： H01L33/06
CPC分类号： C09K11/64 , H01J1/63 , H01J63/04 , H01J63/06
摘要： An ultraviolet irradiation device having a simple structure without using a pn junction, which can efficiently utilize a surface plasmon polariton and can emit ultraviolet light of a specific wavelength at a high efficiency. The device has at least one semiconductor multilayer film element and an electron beam irradiation source which are provided in a container having an ultraviolet-ray transmitting window and is vacuum-sealed, wherein the film element has an active layer formed of InxAlyGa1-x-yN (wherein 0≦x≦1, 0≦y≦1, and x+y≦1) and having a single or multiple quantum well structure and a metal film formed on an upper surface of the active layer, composed of metal particles of aluminum or an aluminum alloy and having a nano-structure formed of the metal particles, wherein ultraviolet light is emitted to the outside through the transmitting window by irradiating the film element with electron beams from the irradiation source.
摘要翻译：一种紫外线照射装置，其具有简单的结构，不使用pn结，能够有效利用表面等离子体激元，能够高效地发射特定波长的紫外线。该装置具有至少一个半导体多层膜元件和电子束照射源，它们设置在具有紫外线透射窗口的容器中，并被真空密封，其中该膜元件具有由In x Al y Ga 1-x-y N （其中0＆nlE; x＆nlE; 1,0和nlE; y＆nlE; 1和x + y＆nlE; 1）并且具有单个或多个量子阱结构和形成在有源层的上表面上的金属膜，由金属的铝或铝合金，并且具有由金属颗粒形成的纳米结构，其中通过用来自照射源的电子束照射膜元件，紫外光通过透射窗口发射到外部。

6. 发明授权

US07362209B2 Zinc oxide resistor and its manufacturing method 失效
标题翻译：氧化锌电阻及其制造方法
公开(公告)号：US07362209B2
公开(公告)日：2008-04-22
申请号：US10537492
申请日：2003-12-02
申请人： Naoki Ohashi , Hajime Haneda , Isao Sakaguchi , Takeshi Ohgaki , Ken Kataoka
发明人： Naoki Ohashi , Hajime Haneda , Isao Sakaguchi , Takeshi Ohgaki , Ken Kataoka
IPC分类号： H01C7/10 , H01C7/13
CPC分类号： H01C7/112
摘要： Disclosed are a zinc oxide resistor structure, and methods of forming a glass layer and a resistor, which are required for producing the resistor structure. The zinc oxide resistor comprises zinc oxide grains and an oxide glass layer which contains bismuth and boron and intervenes between the zinc oxide grains. The oxide glass layer residing between the zinc oxide grains changes the electric properties between the grains to achieve a higher resistance and a non-ohmic characteristic of a voltage-dependent resistance value in the resistor. This non-ohmic characteristic can be applied, particularly, to a non-ohmic device to be compatible with a low-voltage operation. Differently from conventional resistors, the oxide glass layer intervening between the zinc oxide grains can achieve an enhanced mechanical strength of a junction in the device.
摘要翻译：公开了一种氧化锌电阻器结构，以及形成电阻器结构所需的玻璃层和电阻器的形成方法。氧化锌电阻器包括氧化锌晶粒和含有铋和硼并且介于氧化锌晶粒之间的氧化物玻璃层。位于氧化锌晶粒之间的氧化物玻璃层改变晶粒之间的电特性，以实现电阻器中较高的电阻和非电阻特性的电压依赖性电阻值。该非欧姆特性可以特别适用于与欧姆电阻器件兼容的低电压工作。与传统电阻器不同，介于氧化锌晶粒之间的氧化物玻璃层可以实现器件中结的机械强度的增强。

7. 发明申请

US20060164200A1 Zinc oxide resistor and its manufacturing method 失效
标题翻译：氧化锌电阻及其制造方法
公开(公告)号：US20060164200A1
公开(公告)日：2006-07-27
申请号：US10537492
申请日：2003-12-02
申请人： Naoki Ohashi , Hajime Haneda , Isao Sakaguchi , Takeshi Ohgaki , Ken Kataoka
发明人： Naoki Ohashi , Hajime Haneda , Isao Sakaguchi , Takeshi Ohgaki , Ken Kataoka
IPC分类号： H01C7/10
CPC分类号： H01C7/112
摘要： Disclosed are a zinc oxide resistor structure, and methods of forming a glass layer and a resistor, which are required for producing the resistor structure. The zinc oxide resistor comprises zinc oxide grains and an oxide glass layer which contains bismuth and boron and intervenes between the zinc oxide grains. The oxide glass layer residing between the zinc oxide grains changes the electric properties between the grains to achieve a higher resistance and a non-ohmic characteristic of a voltage-dependent resistance value in the resistor. This non-ohmic characteristic can be applied, particularly, to a non-ohmic device to be compatible with a low-voltage operation. Differently from conventional resistors, the oxide glass layer intervening between the zinc oxide grains can achieve an enhanced mechanical strength of a junction in the device.
摘要翻译：公开了一种氧化锌电阻器结构，以及形成电阻器结构所需的玻璃层和电阻器的形成方法。氧化锌电阻器包括氧化锌晶粒和含有铋和硼并且介于氧化锌晶粒之间的氧化物玻璃层。位于氧化锌晶粒之间的氧化物玻璃层改变晶粒之间的电特性，以实现电阻器中较高的电阻和非电阻特性的电压依赖性电阻值。该非欧姆特性可以特别适用于与欧姆电阻器件兼容的低电压工作。与传统电阻器不同，介于氧化锌晶粒之间的氧化物玻璃层可以实现器件中结的机械强度的增强。

8. 发明授权

US06553622B2 Connecting fastener 失效
标题翻译：连接紧固件
公开(公告)号：US06553622B2
公开(公告)日：2003-04-29
申请号：US09934889
申请日：2001-08-22
申请人： Toshio Maruyama , Ken Kataoka , Masasi Nanba , Ryukei Shimizu
发明人： Toshio Maruyama , Ken Kataoka , Masasi Nanba , Ryukei Shimizu
IPC分类号： E05F108
CPC分类号： E05D1/02 , E05F1/1269 , Y10T16/538 , Y10T16/5383
摘要： A connecting fastener 1 in which a first member 2 and a second member 3 are linked so that they can turn relative to one another is provided with (1) a first plate part 5 which is fixed to a fixed member 2; (2) a second plate part 6 which is fixed to a second member 3; and (3) a hinge 7 set in place between the first plate part and the second plate part and supporting both plate parts so that they can turn relative to one another; the first plate part, second plate part and hinge part forming an integral piece as they are made of a synthetic resin. Then, a spring 9 is set in place on the first plate part 5 and the second plate part 6, the spring 9 energizing so that both plate parts are in a non-turning state on either side of the hinge 7.
摘要翻译：其中第一构件2和第二构件3彼此相对地相互连接的连接紧固件1设置有：（1）固定到固定构件2的第一板部5; （2）固定到第二构件3的第二板部6; 和（3）设置在第一板部件和第二板部件之间的铰链7，并且支撑两个板部件使得它们能够相对于彼此转动; 第一板部分，第二板部分和铰链部分由合成树脂制成的整体件。然后，在第一板部5和第二板部6上设置有弹簧9，弹簧9通电，使得两个板部在铰链7的任一侧处于非转动状态。

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