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1. 发明授权

US5413956A Method for producing a semiconductor laser device 失效
标题翻译：半导体激光装置的制造方法
公开(公告)号：US5413956A
公开(公告)日：1995-05-09
申请号：US995064
申请日：1992-12-22
申请人： Masanori Watanabe , Ken Ohbayashi , Kazuaki Sasaki , Osamu Yamamoto , Mitsuhiro Matsumoto
发明人： Masanori Watanabe , Ken Ohbayashi , Kazuaki Sasaki , Osamu Yamamoto , Mitsuhiro Matsumoto
IPC分类号： H01S5/02 , H01S5/028 , H01S5/042 , H01S5/16 , H01L21/20
CPC分类号： H01S5/0425 , H01S5/164 , H01S5/0201 , H01S5/0281 , Y10S148/026 , Y10S148/095 , Y10S148/104 , Y10S148/106 , Y10S148/143 , Y10S438/945
摘要： A method for producing a semiconductor laser device includes the steps of: forming window layers on either one of a top surface of an internal structure or a reverse surface of a substrate and on light-emitting end facets of the internal structure; forming a reflection film on the light-emitting end facets; removing the window layer formed on either one of the top surface or the reverse surface by using an etchant which hardly etches the reflection film; and forming electrodes on the surface from which the window layer is removed by etching and on the other surface. Another method for producing a semiconductor laser device includes the steps of: forming window layers on light-emitting end facets of the bars; inserting the bars into an apparatus having openings for forming electrodes and a supporting portion for preventing a positional shift between the bars and the openings, and forming the electrodes on the top surfaces and the reverse surfaces of the bars; and cutting the bars into the chips.
摘要翻译：一种制造半导体激光器件的方法包括以下步骤：在内部结构的顶表面或衬底的反面中的任一个上以及在内部结构的发光端面上形成窗口层; 在发光端面上形成反射膜; 通过使用几乎不蚀刻反射膜的蚀刻剂去除形成在顶表面或反面中的任一个上的窗口层; 以及在通过蚀刻除去窗口层的表面上和在另一个表面上形成电极。制造半导体激光器件的另一种方法包括以下步骤：在棒的发光端面形成窗口层; 将棒插入具有用于形成电极的开口的装置和用于防止棒和开口之间的位置偏移的支撑部分，以及在棒的顶表面和反面上形成电极; 并将条切成芯片。

2. 发明授权

US5571750A Method for producing a semiconductor laser device 失效
公开(公告)号：US5571750A
公开(公告)日：1996-11-05
申请号：US314585
申请日：1994-09-28
申请人： Masanori Watanabe , Ken Ohbayashi , Kazuaki Sasaki , Osumu Yamamoto , Mitsuhiro Matsumoto
发明人： Masanori Watanabe , Ken Ohbayashi , Kazuaki Sasaki , Osumu Yamamoto , Mitsuhiro Matsumoto
IPC分类号： H01S5/02 , H01S5/028 , H01S5/042 , H01S5/16 , H01L21/20
CPC分类号： H01S5/0425 , H01S5/164 , H01S5/0201 , H01S5/0281 , Y10S148/026 , Y10S148/095 , Y10S148/104 , Y10S148/106 , Y10S148/143 , Y10S438/945
摘要： A method for producing a semiconductor laser device includes the steps of: forming window layers on either one of a top surface of an internal structure or a reverse surface of a substrate and on light-emitting end facets of the internal structure; forming a reflection film on the light-emitting end facets; removing the window layer formed on either one of the top surface or the reverse surface by using an etchant which hardly etches the reflection film; and forming electrodes on the surface from which the window layer is removed by etching and on the other surface. Another method for producing a semiconductor laser device includes the steps of: forming window layers on light-emitting end facets of the bars; inserting the bars into an apparatus having openings for forming electrodes and a supporting portion for preventing a positional shift between the bars and the openings, and forming the electrodes on the top surfaces and the reverse surfaces of the bars; and cutting the bars into the chips.

3. 发明授权

US5592502A Semiconductor laser element and method for adjusting self-induced oscillation intensity of the same 失效
标题翻译：半导体激光元件及其调节自身振荡强度的方法
公开(公告)号：US5592502A
公开(公告)日：1997-01-07
申请号：US327452
申请日：1994-10-21
申请人： Mitsuhiro Matsumoto , Ken Ohbayashi
发明人： Mitsuhiro Matsumoto , Ken Ohbayashi
IPC分类号： H01S5/00 , H01S5/065 , H01S5/068 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/323 , H01S3/18
CPC分类号： H01S5/2231 , H01S5/0658 , H01S5/2004 , H01S5/221 , H01S5/2232 , H01S5/32316
摘要： A semiconductor laser element includes: a semiconductor laminated structure for emitting a laser light, including an active layer interposed between a first cladding layer of a first-conductivity type and a second cladding layer of a second-conductivity type, the first cladding layer and the semiconductor layer having lower refractive indices than that of the active layer; and a current light confining means including a stripe-shaped semiconductor layer of the second-conductivity type formed on a surface of the second cladding layer on a side opposite to the active layer, for confining a laser driving current and the laser light in a region of the active layer corresponding to the stripe-shaped semiconductor layer, wherein the refractive index of the first cladding layer is larger than that of the second cladding layer in the semiconductor laminated structure, and the semiconductor laminated structure includes at least one semiconductor layer of the first-conductivity type having a lower refractive index than that of the first cladding layer, disposed between the first cladding layer and the active layer.
摘要翻译：半导体激光元件包括：发射激光的半导体层叠结构，包括介于第一导电类型的第一包层和第二导电类型的第二包层之间的有源层，第一包层和半导体层的折射率低于有源层的折射率; 以及电流限制装置，包括在与有源层相反的一侧形成在第二包层的表面上的第二导电类型的条形半导体层，用于将激光驱动电流和激光限制在区域所述半导体层叠结构中的所述第一包覆层的折射率比所述第二包层的折射率大，所述半导体层叠结构具有至少一个所述半导体层叠结构的半导体层，第一导电型，其具有比第一包层更低的折射率，设置在第一包层和有源层之间。

4. 发明授权

US6055255A Semiconductor laser device and method for producing the same 失效
标题翻译：半导体激光装置及其制造方法
公开(公告)号：US6055255A
公开(公告)日：2000-04-25
申请号：US790815
申请日：1997-01-30
申请人： Takahiro Suyama , Ken Ohbayashi , Mitsuhiro Matsumoto
发明人： Takahiro Suyama , Ken Ohbayashi , Mitsuhiro Matsumoto
IPC分类号： H01S5/06 , H01S5/065 , H01S5/22 , H01S5/223 , H01S3/19
CPC分类号： H01S5/2231 , H01S5/0601 , H01S5/0658 , H01S5/2219
摘要： A semiconductor laser device includes: a semiconductor substrate of a first conductivity type; a layered structure including at least a first cladding layer of the first conductivity type, an active layer, and a second cladding layer of a second conductivity type. The layered structure is provided on the semiconductor substrate. The semiconductor laser device also includes: a current blocking structure, having a striped concave portion therein, formed on the layered structure; and a third cladding layer of the second conductivity type provided so as to cover the striped concave portion and the current blocking structure. The current blocking structure includes at least a saturable absorbing layer having a forbidden band width which is substantially equal to a forbidden band width of the active layer.
摘要翻译：半导体激光器件包括：第一导电类型的半导体衬底; 包括至少第一导电类型的第一包层，有源层和第二导电类型的第二包层的层状结构。层状结构设置在半导体基板上。半导体激光装置还包括：形成在层状结构上的具有条纹凹部的电流阻挡结构; 以及第二导电类型的第三包覆层，以覆盖条纹凹部和电流阻挡结构。电流阻挡结构至少包括具有禁带宽度的可饱和吸收层，其基本上等于有源层的禁带宽度。

5. 发明授权

US07801194B2 Semiconductor laser device and optical disk unit using the same 有权
标题翻译：半导体激光器件和使用其的光盘单元
公开(公告)号：US07801194B2
公开(公告)日：2010-09-21
申请号：US10608776
申请日：2003-06-30
申请人： Kei Yamamoto , Ken Ohbayashi
发明人： Kei Yamamoto , Ken Ohbayashi
IPC分类号： H01S5/00
CPC分类号： H01S5/32308 , B82Y20/00 , G11B7/127 , G11B11/10532 , H01S5/2004 , H01S5/2231 , H01S5/32333 , H01S5/3407 , H01S5/3434 , H01S5/34386 , H01S2302/00
摘要： In a semiconductor laser device having an oscillation wavelength larger than 760 nm and smaller than 800 nm, at least a lower clad layer, a lower guide layer, an active region, an upper guide layer and an upper clad layer are supported by a GaAs substrate, the active region having a quantum well structure in which one or more well layers and barrier layers are stacked. The one or more well layers and the barrier layers are formed of any one of InGaP, InGaAsP and GaAsP, and the upper and/or lower guide layer is formed of AlzGa1−zAs (0.20
摘要翻译：在振荡波长大于760nm且小于800nm的半导体激光器件中，至少下包层，下引导层，有源区，上引导层和上覆层由GaAs衬底有源区域具有其中堆叠一个或多个阱层和势垒层的量子阱结构。一个或多个阱层和势垒层由InGaP，InGaAsP和GaAsP中的任何一个形成，并且上和/或下引导层由Al z Ga 1-zAs（0.20

6. 发明申请

US20050041708A1 Semiconductor laser device and optical disc drive 有权
标题翻译：半导体激光器件和光盘驱动器
公开(公告)号：US20050041708A1
公开(公告)日：2005-02-24
申请号：US10494946
申请日：2002-11-13
申请人： Yoshie Fujishiro , Ken Ohbayashi , Kei Yamamoto
发明人： Yoshie Fujishiro , Ken Ohbayashi , Kei Yamamoto
IPC分类号： H01S5/223 , H01S5/343 , H01S5/00
CPC分类号： B82Y20/00 , H01S5/2231 , H01S5/3434 , H01S5/34373 , H01S2301/00 , H01S2302/00
摘要： A 780 nm band semiconductor laser device has an InGaAsP well layer, phosphorous composition of which is 0.51 smaller than 0.55 to prevent spinodal decomposition in growing InGaAsP. A compressive strain of 0.65% less than 1% and more than 0.25% is introduced into the well layer to reduce threshold current thereof. Thus, the 0.78-μm band semiconductor laser device having the InGaAsP well layer stably operates for a long time even in outputting a high optical power of 100 mW or more. A tensile strain of 1.2% is also introduced into barrier layers within the active region so as to compensate the stress due to the compressive strain of the well layer. As a result, the reliability of the semiconductor laser device is further increased during a high output operation.
摘要翻译： 780nm波段半导体激光器件具有InGaAsP阱层，其磷组合物为小于0.55的0.51以防止生长的InGaAsP中的亚稳态分解。向阱层中引入小于1％且大于0.25％的0.65％的压缩应变以降低其阈值电流。因此，即使在输出100mW以上的高光功率的情况下，具有InGaAsP阱层的0.78-微波带半导体激光器件也能够长时间稳定地工作。 1.2％的拉伸应变也被引入有源区域内的阻挡层，以补偿由于阱层的压缩应变引起的应力。结果，在高输出操作期间，半导体激光器件的可靠性进一步提高。

7. 发明授权

US07197056B2 Semiconductor laser device and optical disc drive 有权
标题翻译：半导体激光器件和光盘驱动器
公开(公告)号：US07197056B2
公开(公告)日：2007-03-27
申请号：US10494946
申请日：2002-11-13
申请人： Yoshie Fujishiro , Ken Ohbayashi , Kei Yamamoto
发明人： Yoshie Fujishiro , Ken Ohbayashi , Kei Yamamoto
IPC分类号： H01S5/34 , H01S5/00
CPC分类号： B82Y20/00 , H01S5/2231 , H01S5/3434 , H01S5/34373 , H01S2301/00 , H01S2302/00
摘要： A 780 nm band semiconductor laser device has an InGaAsP well layer, phosphorous composition of which is 0.51 smaller than 0.55 to prevent spinodal decomposition in growing InGaAsP. A compressive strain of 0.65% less than 1% and more than 0.25% is introduced into the well layer to reduce threshold current thereof. Thus, the 0.78-μm band semiconductor laser device having the InGaAsP well layer stably operates for a long time even in outputting a high optical power of 100 mW or more. A tensile strain of 1.2% is also introduced into barrier layers within the active region so as to compensate the stress due to the compressive strain of the well layer. As a result, the reliability of the semiconductor laser device is further increased during a high output operation.
摘要翻译： 780nm波段半导体激光器件具有InGaAsP阱层，其磷组合物为小于0.55的0.51以防止生长的InGaAsP中的亚稳态分解。向阱层中引入小于1％且大于0.25％的0.65％的压缩应变以降低其阈值电流。因此，即使在输出100mW以上的高光功率的情况下，具有InGaAsP阱层的0.78-微波带半导体激光器件也能够长时间稳定地工作。 1.2％的拉伸应变也被引入有源区域内的阻挡层，以补偿由于阱层的压缩应变引起的应力。结果，在高输出操作期间，半导体激光器件的可靠性进一步提高。

8. 发明授权

US6140142A Semiconductor laser and a method for producing the same 失效
标题翻译：半导体激光器及其制造方法
公开(公告)号：US6140142A
公开(公告)日：2000-10-31
申请号：US350795
申请日：1999-07-09
申请人： Hiroaki Ikeda , Ken Ohbayashi
发明人： Hiroaki Ikeda , Ken Ohbayashi
IPC分类号： H01S5/00 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/323 , H01L21/20
CPC分类号： H01S5/2231 , H01S5/204 , H01S5/209 , H01S5/222 , H01S5/2227 , H01S5/32316
摘要： A semiconductor laser device according to the present invention includes: a semiconductor substrate having a first conductivity type; and a semiconductor multilayer structure provided on the semiconductor substrate, the semiconductor multilayer structure including an active layer. The semiconductor multilayer structure includes: a lower cladding layer provided below the active layer, the lower cladding layer having the first conductivity type; an upper cladding structure provided above the active layer, the upper cladding structure having a second conductivity type; and a cap layer provided above the upper cladding structure. A ridge is formed in the upper cladding structure, and a width of a lower face of the cap layer is larger than a width of an upper face of the ridge.
摘要翻译：根据本发明的半导体激光器件包括：具有第一导电类型的半导体衬底; 以及设置在所述半导体衬底上的半导体多层结构，所述半导体多层结构包括有源层。半导体多层结构包括：设置在有源层下面的下包层，下包层具有第一导电类型; 设置在所述有源层上方的上包层结构，所述上包层结构具有第二导电类型; 以及设置在上包层结构上方的盖层。在上包层结构中形成脊，并且帽层的下表面的宽度大于脊的上表面的宽度。

9. 发明授权

US5956361A Semiconductor laser and a method for producing the same 失效
标题翻译：半导体激光器及其制造方法
公开(公告)号：US5956361A
公开(公告)日：1999-09-21
申请号：US785242
申请日：1997-01-17
申请人： Hiroaki Ikeda , Ken Ohbayashi
发明人： Hiroaki Ikeda , Ken Ohbayashi
IPC分类号： H01S5/00 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/323 , H01S3/19
CPC分类号： H01S5/2231 , H01S5/204 , H01S5/209 , H01S5/222 , H01S5/2227 , H01S5/32316
摘要： A semiconductor laser device according to the present invention includes: a semiconductor substrate having a first conductivity type; and a semiconductor multilayer structure provided on the semiconductor substrate, the semiconductor multilayer structure including an active layer. The semiconductor multilayer structure includes: a lower cladding layer provided below the active layer, the lower cladding layer having the first conductivity type, an upper cladding structure provided above the active layer, the upper cladding structure having a second conductivity type; and a cap layer provided above the upper cladding structure. A ridge is formed in the upper cladding structure, and a width of a lower face of the cap layer is larger than a width of an upper face of the ridge.
摘要翻译：根据本发明的半导体激光器件包括：具有第一导电类型的半导体衬底; 以及设置在所述半导体衬底上的半导体多层结构，所述半导体多层结构包括有源层。半导体多层结构包括：设置在有源层下面的下包层，具有第一导电类型的下包层，设置在有源层上的上包层结构，上包层结构具有第二导电类型; 以及设置在上包层结构上方的盖层。在上包层结构中形成脊，并且帽层的下表面的宽度大于脊的上表面的宽度。

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