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1. 发明授权

US4965650A Bipolar transistor and method of producing the same 失效
标题翻译：双极晶体管及其制造方法
公开(公告)号：US4965650A
公开(公告)日：1990-10-23
申请号：US420656
申请日：1989-10-11
申请人： Masanori Inada , Kazuo Eda , Yorito Ota , Atsushi Nakagawa , Manabu Yanagihara
发明人： Masanori Inada , Kazuo Eda , Yorito Ota , Atsushi Nakagawa , Manabu Yanagihara
IPC分类号： H01L21/331 , H01L29/08 , H01L29/417 , H01L29/737
CPC分类号： H01L29/66318 , H01L29/0804 , H01L29/41708 , H01L29/7371 , Y10S148/01 , Y10S148/072
摘要： A dummy emitter (a dummy collector, in an inverted type) is formed in the portion corresponding to an emitter (a collector, in the inverted type) region, on a multiplayer structural material including layers for forming emitter, base and collector, and using it as mask, an external base region is exposed by etching, and a projection of the emitter (the collector, in the inverted type) region is formed, while the dummy emitter (the dummy collector, in the inverted type) is inverted into an emitter (a collector, in the inverted type) electrode, thereby forming an emitter (a collector, in the inverted type) electrode metal layer covering the whole upper surface of the emitter (the collector, in the inverted type). Using the thus formed emitter (the collector, in the inverted type) electrode metal layer, a base electrode metal layer is formed, by self-alignment, adjacent to the emitter (the collector, in the inverted type). In another method, on a multilayer structural material, impurities are introduced outside the portion corresponding to the base region of a bipolar transistor in order to insulate, at least, a portion of the layer forming the base, and if necessary a portion of the layer forming the emitter and a portion of the layer forming the collector. Further, an extension layers and the layer forming the collector, and an extension type dummy emitter (a dummy collector, in the inverted type) is formed which extends from the emitter (the collector, in the inverted type) on the base portion to the insulating region formed by transforming from the semiconductor material forming the base, and using it as mask, the external base region is exposed to form an emitter-including layer and the dummy emitter (the dummy collector, in the inverted type) is replaced by an emitter (a collector, in the inverted type) electrode metal layer covering the whole upper surface of the emitter-including layer.

2. 发明授权

US5166081A Method of producing a bipolar transistor 失效
标题翻译：生产双极晶体管的方法
公开(公告)号：US5166081A
公开(公告)日：1992-11-24
申请号：US549589
申请日：1990-06-27
申请人： Masanori Inada , Kazuo Eda , Yorito Ota , Atsushi Nakagawa , Manabu Yanagihara
发明人： Masanori Inada , Kazuo Eda , Yorito Ota , Atsushi Nakagawa , Manabu Yanagihara
IPC分类号： H01L21/331 , H01L29/08 , H01L29/417 , H01L29/737
CPC分类号： H01L29/66318 , H01L29/0804 , H01L29/41708 , H01L29/7371 , Y10S148/01 , Y10S148/072
摘要： A dummy emitter is formed in the portion corresponding to an emitter region, on a multiplayer structural material comprising layers for forming emitter, base and collector, and using it as mask, an external base region is exposed by etching, and a projection of emitter region is formed, while the dummy emitter is inverted into an emitter electrode, thereby forming an emitter electrode metal layer to cover the whole upper surface of the emitter. Using thus formed emitter electrode metal layer, a base electrode metal layer is formed, by self-alignment, adjacently to the emitter. In other method, on a multilayer structural material, impurities are introduced outside the portion corresponding to the base region of a bipolar transistor in order to insulate, at least, the layer to form the emitter, the layer to form the base, or at most, these layers and the layer to form the collector, and an extension type dummy emitter extending from the emitter portion to the insulating region formed by transforming from the semiconductor material to form the emitter and using it as mask, the external base region is exposed to form a projection coupling the emitter region and insulating region, and the dummy emitter is inverted to transform into an emitter electrode metal layer to cover the whole upper surface of the projection.

3. 发明授权

US5037769A Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5037769A
公开(公告)日：1991-08-06
申请号：US330956
申请日：1989-03-28
申请人： Masanori Inada , Kazuo Eda , Yorito Ota
发明人： Masanori Inada , Kazuo Eda , Yorito Ota
IPC分类号： H01L29/36 , H01L29/737
CPC分类号： H01L29/36 , H01L29/7371 , Y10S148/01 , Y10S148/072
摘要： A semiconductor device of a multilayer structure comprising semiconductor materials of different properties manufactured by using at least a step of epitaxially forming a semiconductor material layer on a substrate and a passivation film layer thereover, a step of introducing impurities into specific portions of the epitaxially formed semiconductor material layer and a step of removing the passivation film layer formed directly above the epitaxially formed semiconductor material layer within an epitaxial device and then applying epitaxial growing. Impurities introduced additionally to specific portions of the layer inside are substantially eliminated at the boundary adjacent the layer above the region introduced with impurities and the properties of the thus-produced semiconductors vary abruptly at the boundary between the layer in which the impurities are introduced and the layer thereabove. The material used for the passivation film layer comprises one that can be epitaxially formed and easily removed at a temperature and in a atmosphere under which the epitaxially formed layer below the passivation film are not decomposed or evaporized.
摘要翻译：一种多层结构的半导体器件，包括通过至少在衬底上外延形成半导体材料层的步骤和其上的钝化膜层而制造的具有不同性质的半导体材料，将杂质引入外延形成的半导体的特定部分材料层和去除在外延装置内的外延形成的半导体材料层正上方形成的钝化膜层，然后施加外延生长的步骤。在与内部区域相邻的边界处附近引入的层的特定部分的杂质基本上消除，并且由此产生的半导体的性质在其中引入杂质的层与其之间的边界处突然变化层以上。用于钝化膜层的材料包括可以在外部形成的并且在钝化膜下面的外延形成层不分解或蒸发的温度和气氛中容易除去的材料。

4. 发明授权

US4746626A Method of manufacturing heterojunction bipolar transistors 失效
标题翻译：异质结双极晶体管的制造方法
公开(公告)号：US4746626A
公开(公告)日：1988-05-24
申请号：US48470
申请日：1987-05-08
申请人： Kazuo Eda , Masanori Inada , Yorito Ota
发明人： Kazuo Eda , Masanori Inada , Yorito Ota
IPC分类号： H01L21/331 , H01L29/73 , H01L29/737 , H01L21/203
CPC分类号： H01L29/66318 , H01L29/73 , H01L29/7371
摘要： A heterojunction bipolar transistor having excellent high-frequency characteristics is manufactured by forming a semi-insulating semiconductor layer on a collector (or emitter) layer, removing a part of the semi-insulating semiconductor layer to form a cut portion so that the collector layer is exposed at the cut portion, growing a base layer on the semi-insulating semiconductor layer, on a slant wall of the cut portion and on the exposed part of the collector layer, and growing an emitter (or collector) layer on the base layer. A base layer may be preliminarily formed on the semi-insulating semiconductor layer before forming the cut portion. Energy band gap of the emitter is greater than that of the base.
摘要翻译：通过在集电极（或发射极）层上形成半绝缘性半导体层，除去半绝缘性半导体层的一部分，形成切断部，使集电体层为在切割部分露出，在半绝缘半导体层上生长基底层，在切割部分的倾斜壁上和集电体层的暴露部分上生长基底层上的发射极（或集电极）层。在形成切割部分之前，可以在半绝缘半导体层上预先形成基底层。发射极的能带隙大于基极的能带隙。

5. 发明授权

US4400683A Voltage-dependent resistor 失效
标题翻译：电压相关电阻
公开(公告)号：US4400683A
公开(公告)日：1983-08-23
申请号：US303613
申请日：1981-09-18
申请人： Kazuo Eda , Masanori Inada , Michio Matsuoka
发明人： Kazuo Eda , Masanori Inada , Michio Matsuoka
IPC分类号： H01C7/102 , H01C7/10
CPC分类号： H01C7/102
摘要： A voltage-dependent resistor having at least one zinc oxide (ZnO) layer adjacent to at least one metal oxide layer of bismuth oxide (Bi.sub.2 O.sub.3) and at least one of the members selected from the group consisting of cobalt oxide (Co.sub.2 O.sub.3) manganese oxide (MnO.sub.2) antimony oxide (Sb.sub.2 O.sub.3) and zinc oxide (ZnO).
摘要翻译：具有至少一个与氧化铋（Bi 2 O 3）的至少一个金属氧化物层相邻的氧化锌（ZnO）层和选自氧化钴（Co 2 O 3）氧化锰（Bi 2 O 3）中的至少一种的电压相关电阻器） MnO 2）氧化锑（Sb 2 O 3）和氧化锌（ZnO）。

6. 发明授权

US06284640B1 Manufacturing method for semiconductor device, mounting method of semiconductor device, semiconductor device, and inspecting method of semiconductor device 失效
标题翻译：半导体装置的制造方法，半导体装置的安装方法，半导体装置以及半导体装置的检查方法
公开(公告)号：US06284640B1
公开(公告)日：2001-09-04
申请号：US09427807
申请日：1999-10-27
申请人： Masahiro Ono , Tsukasa Shiraishi , Yoshihiro Bessho , Kazuo Eda
发明人： Masahiro Ono , Tsukasa Shiraishi , Yoshihiro Bessho , Kazuo Eda
IPC分类号： H01L2144
CPC分类号： H01L24/85 , H01L24/11 , H01L24/45 , H01L24/48 , H01L24/78 , H01L2224/05001 , H01L2224/05022 , H01L2224/05027 , H01L2224/0508 , H01L2224/05572 , H01L2224/1134 , H01L2224/13099 , H01L2224/16 , H01L2224/451 , H01L2224/48091 , H01L2224/48465 , H01L2224/78301 , H01L2224/81191 , H01L2224/85181 , H01L2224/85205 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/13091 , H01L2924/14 , H01L2924/00014 , H01L2924/00
摘要： A manufacturing method for a semiconductor device using a wire bonding method using a metal wire. In the wire bonding method, an impact load applied when a metal ball formed at the tip of the metal wire by electric discharge is brought into contact with a terminal electrode of a semiconductor device is smaller than a static load applied after the metal ball is brought into contact with the terminal electrode. The method makes it possible to prevent an element or wiring from being damaged while securing the pressure necessary for bonding the metal ball to the terminal electrode even when the terminal electrode is placed on the element or the wiring.
摘要翻译：一种使用金属线的引线接合方法的半导体器件的制造方法。在引线接合方法中，当通过放电在金属线的前端形成的金属球与半导体器件的端子电极接触时施加的冲击载荷小于在金属球被带入之后施加的静态载荷与端子电极接触。该方法使得即使当将端子电极放置在元件或布线上时，也可以确保将金属球接合到端子电极所需的压力，从而防止元件或布线损坏。

7. 发明授权

US6166611A Resonator ladder type surface acoustic wave filter 失效
标题翻译：谐振梯型声表面波滤波器
公开(公告)号：US6166611A
公开(公告)日：2000-12-26
申请号：US57916
申请日：1998-04-09
申请人： Shun-ichi Seki , Yutaka Taguchi , Keiji Onishi , Osamu Kawasaki , Kazuo Eda
发明人： Shun-ichi Seki , Yutaka Taguchi , Keiji Onishi , Osamu Kawasaki , Kazuo Eda
IPC分类号： H03H9/145 , H03H9/05 , H03H9/25 , H03H9/64
CPC分类号： H03H9/1085 , H01L2224/05568 , H01L2224/05573 , H01L2224/16225 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/73265 , H01L2924/00014 , H01L2924/16195 , H03H9/059 , H03H9/6483 , H01L2924/00 , H01L2224/05599
摘要： A resonator ladder type surface acoustic wave filter, has an input electrical terminal, an output electrical terminal, and a grounding terminal being formed on a piezoelectric substrate, a series arm surface acoustic wave resonator and a parallel arm surface acoustic wave resonator, each constructed from an interdigital transducer for exciting a surface acoustic wave, being formed between said input electrical terminal and said output electrical terminal, and when the center frequency of said resonator ladder type surface acoustic wave filter is denoted by fc, and capacitance determined by the number of electrode finger pairs and electrode finger overlap width in said interdigital transducer of said parallel arm surface acoustic wave resonator is denoted by Cp (fc: center frequency [GHz], Cp: capacitance of the interdigital transducer of the parallel arm surface acoustic wave resonator), capacitance C of multiples of said parallel arm surface acoustic wave resonator, connected to the same node between said input electrical terminal and said output electrical terminal, always satisfies the relationfc.multidot.Cp
摘要翻译：一种谐振梯型声表面波滤波器，具有输入电端子，输出电端子和形成在压电基板上的接地端子，串联臂声表面波谐振器和平行臂表面声波谐振器，每个由在所述输入电端子和所述输出电端子之间形成用于激励表面声波的叉指换能器，并且当所述共振器梯型表面声波滤波器的中心频率由fc表示时，并且由电极数量确定的电容所述平行臂声表面波谐振器的叉指式换能器中的手指对和电极指重叠宽度由Cp（fc：中心频率[GHz]，Cp：并联臂声表面波谐振器的叉指式换能器的电容），电容所述平行臂声表面波谐振器的倍数为C，连接到s 所述输入电端子和所述输出电端子之间的ame节点总是满足关系fcxCp <4

8. 发明授权

US5925973A Electronic component and method for producing the same 失效
标题翻译：电子元件及其制造方法
公开(公告)号：US5925973A
公开(公告)日：1999-07-20
申请号：US787362
申请日：1997-01-22
申请人： Kazuo Eda , Yoshihiro Tomita , Akihiro Kanaboshi , Masato Sugimoto
发明人： Kazuo Eda , Yoshihiro Tomita , Akihiro Kanaboshi , Masato Sugimoto
IPC分类号： C04B37/00 , H01L21/02 , H01L27/12 , H01L41/04 , H01L41/18 , H03H3/02 , H03H3/08 , H03H9/10 , H03H9/17 , H03H9/25 , H01L41/08
CPC分类号： H03H9/0595 , H01L41/053 , H01L41/312 , H03H3/02 , H03H3/08 , H03H9/1035 , Y10T29/42
摘要： An electronic component of the present invention includes a first substrate, a second substrate, a first conductive layer constituting a terminal electrode on a first surface of the first substrate, and a first insulating layer formed on the first conductive layer, wherein the first insulating layer and the second substrate are directly bonded to each other by at least one bond selected from the group consisting of a hydrogen bond and a covalent bond.
摘要翻译：本发明的电子元件包括第一基板，第二基板，构成第一基板的第一表面上的端子电极的第一导电层和形成在第一导电层上的第一绝缘层，其中第一绝缘层并且第二底物通过选自氢键和共价键的至少一个键直接键合。

9. 发明授权

US5920142A Electronic part and a method of production thereof 失效
公开(公告)号：US5920142A
公开(公告)日：1999-07-06
申请号：US813279
申请日：1997-03-10
申请人： Keiji Onishi , Hideki Iwaki , Shun-ichi Seki , Yutaka Taguchi , Tsukasa Shiraishi , Yoshihiro Bessho , Osamu Kawasaki , Kazuo Eda
发明人： Keiji Onishi , Hideki Iwaki , Shun-ichi Seki , Yutaka Taguchi , Tsukasa Shiraishi , Yoshihiro Bessho , Osamu Kawasaki , Kazuo Eda
IPC分类号： H03H3/08 , H03H9/10 , H01L41/08
CPC分类号： H03H9/0509 , H03H3/08 , H03H9/0585 , H03H9/059 , H03H9/1042 , H03H9/1071 , H03H9/1085 , H03H9/1092 , H01L2224/1134 , H01L2224/131 , H01L2224/13124 , H01L2224/13144 , H01L2224/45144 , H01L2924/00013 , H01L2924/09701 , H01L2924/16152 , Y10T29/42 , Y10T29/4913 , Y10T29/49146
摘要： The present invention relates to an electronic part used for mobile communications apparatuses and the like, and more particularly to an electronic part, such as an acoustic surface-wave device, a piezoelectric ceramic device or the like, which requires an oscillation space near the surface of the functional device chip thereof, and a method of production thereof. With this method, a space retainer for forming a sealed space at the functional portion of the chip can be hermetically sealed and have high moisture resistance, and the process of forming the space retainer can be carried out easily.The electronic part of the present invention comprises a functional device chip, a space retainer for forming a sealed space at the functional portion of the chip, a circuit substrate to which the chip is secured, electrode interconnection portions for establishing electric connection between the chip and the circuit substrate, and a sealing resin for covering and sealing at least the space retainer, wherein the space retainer comprises a support layer made of a synthetic resin film, provided with an opening enclosing the functional portion and joined onto the main surface, and a cover formed and joined onto the support layer so as to cover the functional portion and form a sealed space between the cover and the functional portion.

10. 发明授权

US5892418A Balanced type surface acoustic wave device 失效
标题翻译：平衡型声表面波装置
公开(公告)号：US5892418A
公开(公告)日：1999-04-06
申请号：US898769
申请日：1997-07-23
申请人： Keiji Onishi , Kazuo Eda , Yutaka Taguchi , Shunichi Seki
发明人： Keiji Onishi , Kazuo Eda , Yutaka Taguchi , Shunichi Seki
IPC分类号： H03H9/25 , H03H9/00 , H03H9/64
CPC分类号： H03H9/6436 , H03H9/0038 , H03H9/0042 , H03H9/1071 , H03H9/6433
摘要： The present invention provides surface acoustic wave devices which do not require a balanced-to-unbalanced transformer circuit regardless of the type of the peripheral circuits of the balanced type surface acoustic wave filter, i.e. a balanced type device or an unbalanced type. A transmitting interdigital transducer and a receiving interdigital transducer are formed on a substrate comprising 41.degree. Y cut-X propagation lithium niobate. A balanced type surface acoustic wave filter is formed on a substrate comprising 36.degree. Y cut-X propagation lithium tantalate. The balanced type surface acoustic wave filter comprises two series-arm surface acoustic wave resonators and two crossed-arm surface acoustic wave resonators connected in a lattice. The substrate on which the transmitting interdigital transducer and the receiving interdigital transducer are formed and the substrate on which the balanced type surface acoustic wave filter is formed are located in a ceramic package. One of the input terminals of the transmitting interdigital transducer is grounded. The output terminals of the receiving interdigital transducer are connected to the input terminals of the balanced type surface acoustic wave filter.
摘要翻译：本发明提供了不需要平衡型不平衡变压器电路的表面声波装置，而不管平衡型表面声波滤波器的外围电路的类型，即平衡型装置或不平衡型。在包含41°Y切割X传播铌酸锂的基板上形成发射叉指式换能器和接收叉指式换能器。在包含36°Y切割X传播的钽酸锂的基板上形成平衡型表面声波滤波器。平衡型表面声波滤波器包括两个串联臂表面声波谐振器和两个以格子连接的交叉臂表面声波谐振器。其上形成有发送叉指式换能器和接收叉指式换能器的基板和形成有平衡型表面声波滤波器的基板位于陶瓷封装中。发射叉指式换能器的输入端之一接地。接收叉指式换能器的输出端连接到平衡型声表面波滤波器的输入端。

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