专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07781241B2 Group III-V semiconductor device and method for producing the same 有权
标题翻译： III-V族半导体器件及其制造方法
公开(公告)号：US07781241B2
公开(公告)日：2010-08-24
申请号：US11987420
申请日：2007-11-29
申请人： Masanobu Ando , Shigemi Horiuchi , Yoshinori Kinoshita , Ryohei Inazawa , Toshiya Uemura
发明人： Masanobu Ando , Shigemi Horiuchi , Yoshinori Kinoshita , Ryohei Inazawa , Toshiya Uemura
IPC分类号： H01L21/00
CPC分类号： H01L21/8252 , H01L33/0079
摘要： The method of the invention for producing a group III-V semiconductor device includes forming, on a base, a plurality of semiconductor devices isolated from one another, each semiconductor device having at least an n-layer proximal to the base, and a p-layer distal to the base, and having a p-electrode formed on the top surface of the p-layer, and a first low-melting-point metal diffusion preventing layer, the low-melting-point metal diffusion preventing layer being formed on the top surface of the p-electrode; forming, from a dielectric material, a side-surface protective film so as to cover a side surface of each semiconductor device; bonding the semiconductor device to a conductive support substrate via a low-melting-point metal layer; and removing the base through the laser lift-off process.
摘要翻译：本发明的用于制造III-V族半导体器件的方法包括在基底上形成彼此隔离的多个半导体器件，每个半导体器件至少具有靠近基极的n层，并且具有形成在p层顶表面上的p电极和第一低熔点金属扩散防止层，所述低熔点金属扩散防止层形成在所述p层上， p电极的顶表面; 从绝缘材料形成侧面保护膜以覆盖每个半导体器件的侧表面; 通过低熔点金属层将半导体器件接合到导电支撑衬底; 并通过激光剥离过程去除底座。

2. 发明申请

US20080149953A1 Group III-V semiconductor device and method for producing the same 有权
标题翻译： III-V族半导体器件及其制造方法
公开(公告)号：US20080149953A1
公开(公告)日：2008-06-26
申请号：US11987420
申请日：2007-11-29
申请人： Masanobu Ando , Shigemi Horiuchi , Yoshinori Kinoshita , Ryohei Inazawa , Toshiya Uemura
发明人： Masanobu Ando , Shigemi Horiuchi , Yoshinori Kinoshita , Ryohei Inazawa , Toshiya Uemura
IPC分类号： H01L21/76 , H01L33/00 , H01L21/02
CPC分类号： H01L21/8252 , H01L33/0079
摘要： The method of the invention for producing a group III-V semiconductor device includes forming, on a base, a plurality of semiconductor devices isolated from one another, each semiconductor device having at least an n-layer proximal to the base, and a p-layer distal to the base, and having a p-electrode formed on the top surface of the p-layer, and a first low-melting-point metal diffusion preventing layer, the low-melting-point metal diffusion preventing layer being formed on the top surface of the p-electrode; forming, from a dielectric material, a side-surface protective film so as to cover a side surface of each semiconductor device; bonding the semiconductor device to a conductive support substrate via a low-melting-point metal layer; and removing the base through the laser lift-off process.
摘要翻译：本发明的用于制造III-V族半导体器件的方法包括在基底上形成彼此隔离的多个半导体器件，每个半导体器件至少具有靠近基极的n层，并且具有形成在p层顶表面上的p电极和第一低熔点金属扩散防止层，所述低熔点金属扩散防止层形成在所述p层上， p电极的顶表面; 从绝缘材料形成侧面保护膜以覆盖每个半导体器件的侧表面; 通过低熔点金属层将半导体器件接合到导电支撑衬底; 并通过激光剥离过程去除底座。

3. 发明申请

US20100081256A1 Method for producing group III nitride compound semiconductor element 有权
标题翻译：制备III族氮化物半导体元件的方法
公开(公告)号：US20100081256A1
公开(公告)日：2010-04-01
申请号：US12585969
申请日：2009-09-29
申请人： Toshiya Uemura , Masanobu Ando , Tomoharu Shiraki , Masahiro Ohashi , Naoki Arazoe , Ryohei Inazawa
发明人： Toshiya Uemura , Masanobu Ando , Tomoharu Shiraki , Masahiro Ohashi , Naoki Arazoe , Ryohei Inazawa
IPC分类号： H01L21/302
CPC分类号： H01L33/0079 , H01L33/0095 , H01L33/44 , H01L33/46
摘要： A method for producing a Group III nitride compound semiconductor element includes growing an epitaxial layer containing a Group III nitride compound semiconductor using a different kind of substrate as an epitaxial growth substrate, adhering a supporting substrate to the top surface of the epitaxial growth layer through a conductive layer, and then removing the epitaxial growth substrate by laser lift-off. Before adhesion of the epitaxial layer and the supporting substrate, a first groove that at least reaches an interface between the bottom surface of the epitaxial layer and the epitaxial growth substrate from the top surface of the epitaxial layer formed on the epitaxial growth substrate and acts as an air vent communicating with the outside of a wafer when the epitaxial layer and the supporting substrate are joined to each other. Next, the epitaxial layer is divided into each chip by separating the epitaxial growth substrate by laser lift-off, and then removing the epitaxial layer serving as the outer periphery of each chip. Next, the outer peripheral side surface of the epitaxial layer of each chip is at least completely covered with an insulating protective film. Next, the supporting substrate is separated into each chip.
摘要翻译：制造III族氮化物化合物半导体元件的方法包括：使用不同种类的基板作为外延生长基板，生长含有III族氮化物化合物半导体的外延层，将支撑基板通过外延生长层的上表面附着在外延生长层的顶面导电层，然后通过激光剥离去除外延生长衬底。在外延层和支撑基板的粘合之前，形成至少到达外延层的底表面与外延生长衬底之间的界面的第一沟槽，该外延生长衬底从形成在外延生长衬底上的外延层的顶表面起作用当所述外延层和所述支撑基板彼此接合时与所述晶片的外部连通的通风口。接下来，通过用激光剥离分离外延生长衬底，然后除去作为每个芯片的外周的外延层，将外延层分成每个芯片。接下来，每个芯片的外延层的外周侧表面至少完全被绝缘保护膜覆盖。接下来，将支撑基板分离成各个芯片。

4. 发明授权

US08324083B2 Method for producing group III nitride compound semiconductor element 有权
标题翻译：制备III族氮化物半导体元件的方法
公开(公告)号：US08324083B2
公开(公告)日：2012-12-04
申请号：US12585969
申请日：2009-09-29
申请人： Toshiya Uemura , Masanobu Ando , Tomoharu Shiraki , Masahiro Ohashi , Naoki Arazoe , Ryohei Inazawa
发明人： Toshiya Uemura , Masanobu Ando , Tomoharu Shiraki , Masahiro Ohashi , Naoki Arazoe , Ryohei Inazawa
IPC分类号： H01L21/00 , H01L21/30 , H01L21/46
CPC分类号： H01L33/0079 , H01L33/0095 , H01L33/44 , H01L33/46
摘要： A method for producing a Group III nitride compound semiconductor element includes growing an epitaxial layer containing a Group III nitride compound semiconductor using a different kind of substrate as an epitaxial growth substrate, adhering a supporting substrate to the top surface of the epitaxial growth layer through a conductive layer, and then removing the epitaxial growth substrate by laser lift-off. Before adhesion of the epitaxial layer and the supporting substrate, a first groove that at least reaches an interface between the bottom surface of the epitaxial layer and the epitaxial growth substrate from the top surface of the epitaxial layer formed on the epitaxial growth substrate and acts as an air vent communicating with the outside of a wafer when the epitaxial layer and the supporting substrate are joined to each other. Next, the epitaxial layer is divided into each chip by separating the epitaxial growth substrate by laser lift-off, and then removing the epitaxial layer serving as the outer periphery of each chip. Next, the outer peripheral side surface of the epitaxial layer of each chip is at least completely covered with an insulating protective film. Next, the supporting substrate is separated into each chip.
摘要翻译：制造III族氮化物化合物半导体元件的方法包括：使用不同种类的基板作为外延生长基板，生长含有III族氮化物化合物半导体的外延层，将支撑基板通过外延生长层的上表面附着在外延生长层的顶面导电层，然后通过激光剥离去除外延生长衬底。在外延层和支撑基板的粘合之前，形成至少到达外延层的底表面与外延生长衬底之间的界面的第一沟槽，该外延生长衬底从形成在外延生长衬底上的外延层的顶表面起作用当所述外延层和所述支撑基板彼此接合时与所述晶片的外部连通的通风口。接下来，通过用激光剥离分离外延生长衬底，然后除去作为每个芯片的外周的外延层，将外延层分成每个芯片。接下来，每个芯片的外延层的外周侧表面至少完全被绝缘保护膜覆盖。接下来，将支撑基板分离成各个芯片。

5. 发明授权

US07541262B2 Method for producing semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US07541262B2
公开(公告)日：2009-06-02
申请号：US11633622
申请日：2006-12-05
申请人： Masanobu Ando , Toshiya Uemura , Shigemi Horiuchi
发明人： Masanobu Ando , Toshiya Uemura , Shigemi Horiuchi
IPC分类号： H01L21/30
CPC分类号： H01L33/0079 , H01L33/32 , H01L33/38 , H01L33/40
摘要： The present invention contemplates preventing clogging of a dicer for forming separation trenches in a semiconductor wafer, and as well improving the yield of a semiconductor device cut out of the semiconductor wafer. A second adhesive to be charged into spaces contains an epoxy material as a base material. Silica filler particles (diameter: about 2 to about 4 μm) are added to the base material in an appropriate amount. Charging of the second adhesive may be performed by adding the adhesive dropwise to a side wall of a semiconductor wafer, or by immersing an edge of the semiconductor wafer in the adhesive in the form of liquid. When a liquid-form epoxy material of low viscosity is employed, the spaces can be evenly filled with the second adhesive by capillary action. An n-electrode is formed on an exposed surface of an n-type layer through vapor deposition employing a resist mask. Separation trenches are formed through half-cut dicing from the exposed surface of the n-type layer toward the second adhesive.
摘要翻译：本发明考虑防止用于在半导体晶片中形成分离沟槽的切割机的堵塞，并且还提高从半导体晶片切出的半导体器件的产量。要填充到空间中的第二粘合剂包含环氧树脂材料作为基材。将二氧化硅填料颗粒（直径：约2至约4μm）以适当的量加入到基材中。第二粘合剂的充电可以通过将粘合剂滴加到半导体晶片的侧壁，或者通过将半导体晶片的边缘以液体的形式浸入粘合剂中来进行。当使用低粘度的液态环氧材料时，可以通过毛细作用将间隙均匀地填充第二粘合剂。通过使用抗蚀剂掩模的气相沉积在n型层的暴露表面上形成n电极。通过从n型层的暴露表面朝向第二粘合剂的半切割切割形成分离沟槽。

6. 发明申请

US20070141807A1 Method for producing semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US20070141807A1
公开(公告)日：2007-06-21
申请号：US11633622
申请日：2006-12-05
申请人： Masanobu Ando , Toshiya Uemura , Shigemi Horiuchi
发明人： Masanobu Ando , Toshiya Uemura , Shigemi Horiuchi
IPC分类号： H01L21/30
CPC分类号： H01L33/0079 , H01L33/32 , H01L33/38 , H01L33/40
摘要： The present invention contemplates preventing clogging of a dicer for forming separation trenches in a semiconductor wafer, and as well improving the yield of a semiconductor device cut out of the semiconductor wafer. A second adhesive to be charged into spaces contains an epoxy material as a base material. Silica filler particles (diameter: about 2 to about 4 μm) are added to the base material in an appropriate amount. Charging of the second adhesive may be performed by adding the adhesive dropwise to a side wall of a semiconductor wafer, or by immersing an edge of the semiconductor wafer in the adhesive in the form of liquid. When a liquid-form epoxy material of low viscosity is employed, the spaces can be evenly filled with the second adhesive by capillary action. An n-electrode is formed on an exposed surface of an n-type layer through vapor deposition employing a resist mask. Separation trenches are formed through half-cut dicing from the exposed surface of the n-type layer toward the second adhesive.
摘要翻译：本发明考虑防止用于在半导体晶片中形成分离沟槽的切割机的堵塞，并且还提高从半导体晶片切出的半导体器件的产量。要填充到空间中的第二粘合剂包含环氧树脂材料作为基材。将二氧化硅填料颗粒（直径：约2至约4μm）以适当的量加入到基材中。第二粘合剂的充电可以通过将粘合剂滴加到半导体晶片的侧壁，或者将半导体晶片的边缘以液体的形式浸入粘合剂中来进行。当使用低粘度的液态环氧材料时，可以通过毛细作用将间隙均匀地填充第二粘合剂。通过使用抗蚀剂掩模的气相沉积在n型层的暴露表面上形成n电极。通过从n型层的暴露表面朝向第二粘合剂的半切割切割形成分离沟槽。

7. 发明申请

US20070138540A1 Group III nitride based compound semiconductor optical device 审中-公开
标题翻译： III族氮化物基化合物半导体光学器件
公开(公告)号：US20070138540A1
公开(公告)日：2007-06-21
申请号：US11633621
申请日：2006-12-05
申请人： Toshiya Uemura , Shigemi Horiuchi , Masanobu Ando
发明人： Toshiya Uemura , Shigemi Horiuchi , Masanobu Ando
IPC分类号： H01L29/792
CPC分类号： H01L33/405 , H01L33/0079 , H01L33/32 , H01S5/0213 , H01S5/0217 , H01S5/32341
摘要： An object of the invention is to prevent defoliation of a first electrode layer of the device of the invention including a high-reflectance metal layer. In the group III nitride based compound semiconductor optical device of the invention, an electrode formed on a p-type layer has a first electrode layer which is formed from high-reflectance rhodium (Rh) and which is directly joined to the p-type layer, and a second electrode layer which is formed from titanium (Ti) having reactivity with nitrogen and which is provided so as to cover the first electrode layer, and a portion of the second electrode layer is joined to the uppermost layer of the group III nitride based compound semiconductor.
摘要翻译：本发明的目的是防止包括高反射率金属层的本发明的器件的第一电极层脱落。在本发明的III族氮化物系化合物半导体光学元件中，形成在p型层上的电极具有由高反射率铑（Rh）形成的第一电极层，其与p型层直接接合以及第二电极层，其由与氮反应性的钛（Ti）形成，并且被设置为覆盖第一电极层，并且第二电极层的一部分接合到III族氮化物的最上层基复合半导体。

8. 发明申请

US20070141806A1 Method for producing group III nitride based compound semiconductor device 审中-公开
标题翻译：制备III族氮化物基化合物半导体器件的方法
公开(公告)号：US20070141806A1
公开(公告)日：2007-06-21
申请号：US11633619
申请日：2006-12-05
申请人： Toshiya Uemura , Shigemi Horiuchi
发明人： Toshiya Uemura , Shigemi Horiuchi
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L33/40 , H01L33/32
摘要： The present invention relates to method for producing a group III nitride based compound semiconductor device. A plurality of group III nitride based compound semiconductor layers are epitaxially grown on a first substrate. An electrode is formed on the uppermost layer of the group III nitride based compound semiconductor layers, the electrode being formed of a first multi-layer including at least a layer for preventing migration of tin contained in a solder. A second multi-layer including at least a layer for preventing migration of tin contained in a solder is formed on a second substrate on which a semiconductor device is to be placed. The surface of the first substrate on which the electrode has been formed is joined to the surface of the second substrate on which the multi-layer has been formed by means of a solder containing at least tin. the first substrate removed from the group III nitride based compound semiconductor layers.
摘要翻译：本发明涉及制备III族氮化物基化合物半导体器件的方法。在第一基板上外延生长多个III族氮化物基化合物半导体层。在III族氮化物基化合物半导体层的最上层形成电极，该电极由至少包含防止锡中所含锡迁移的第一多层形成。在其上放置半导体器件的第二基板上形成至少包括用于防止焊料中所含锡迁移的层的多层。已经形成有电极的第一基板的表面通过至少含有锡的焊料接合到已经形成多层的第二基板的表面上。从III族氮化物基化合物半导体层去除第一衬底。

9. 发明申请

US20070141753A1 Group III nitride based compound semiconductor device and producing method for the same 审中-公开
标题翻译： III族氮化物基化合物半导体器件及其制备方法
公开(公告)号：US20070141753A1
公开(公告)日：2007-06-21
申请号：US11633623
申请日：2006-12-05
申请人： Toshiya Uemura , Shigemi Horiuchi
发明人： Toshiya Uemura , Shigemi Horiuchi
IPC分类号： H01L21/00
CPC分类号： H01L33/0095 , H01L21/78
摘要： The present invention relates to method for producing a group III nitride based compound semiconductor device, including separating the device into individual chips by means of a dicing blade. A portion of an epitaxial layer where a dicing blade is to be positioned is partially or totally removed through etching, to thereby form a trench. An insulating film is formed on the bottom and on the side surfaces of the trench. A wafer is diced into chips in such a manner that the bottom of the trench is removed by means of the dicing blade without completely removing the side surfaces of the insulating film. The insulting film is formed on the side surfaces of the trench such that the film covers a p-type layer to an n-type layer included in group III nitride based compound semiconductor layers so as to prevent short circuit between the p-type layer and the n-type layer.
摘要翻译：本发明涉及一种用于制造III族氮化物基化合物半导体器件的方法，包括通过切割刀片将器件分离成单独的芯片。通过蚀刻部分地或完全地去除其中定位切割刀片的外延层的一部分，从而形成沟槽。绝缘膜形成在沟槽的底部和侧表面上。将晶片切成芯片，使得通过切割刀片去除沟槽的底部，而不会完全去除绝缘膜的侧表面。绝缘膜形成在沟槽的侧表面上，使得膜覆盖p型层到包含在III族氮化物基化合物半导体层中的n型层，以防止p型层和 n型层。

10. 发明授权

US07109529B2 Light-emitting semiconductor device using group III nitride compound 失效
标题翻译：使用III族氮化物化合物的发光半导体器件
公开(公告)号：US07109529B2
公开(公告)日：2006-09-19
申请号：US10864495
申请日：2004-06-10
申请人： Toshiya Uemura , Shigemi Horiuchi
发明人： Toshiya Uemura , Shigemi Horiuchi
IPC分类号： H01L29/22 , H01L31/072
CPC分类号： H01L33/405 , H01L33/32
摘要： A flip chip type of light-emitting semiconductor device using group III nitride compound includes a thick positive electrode. The positive electrode, which is made of at least one of silver (Ag), rhodium (Rh), ruthenium (Ru), platinum (Pt) and palladium (Pd), and an alloy including at least one of these metals, is adjacent to a p-type semiconductor layer, and reflect light toward a sapphire substrate. Accordingly, a positive electrode having a high reflectivity and a low contact resistance can be obtained. A first thin-film metal layer, which is made of cobalt (Co) and nickel (Ni), or any combinations of including at least one of these metals, formed between the p-type semiconductor layer and the thick electrode, can improve an adhesion between an contact layer and the thick positive electrode. A thickness of the first thin-film metal electrode should be preferably in the range of 2 Å to 200 Å, more preferably 5 Å to 50 Å. A second thin-film metal layer made of gold (Au) can further improve the adhesion.
摘要翻译：使用III族氮化物化合物的倒装芯片型发光半导体器件包括厚的正电极。由银（Ag），铑（Rh），钌（Ru），铂（Pt）和钯（Pd）中的至少一种以及包含这些金属中的至少一种的合金制成的正极是相邻的到p型半导体层，并且朝向蓝宝石衬底反射光。因此，可以获得具有高反射率和低接触电阻的正极。由p型半导体层和厚电极之间形成的由钴（Co）和镍（Ni）构成的第一薄膜金属层或包含这些金属中的至少一种的任意组合可以改善接触层与厚正电极之间的粘合。第一薄膜金属电极的厚度应优选在2埃至200埃的范围内，更优选在5埃至50埃的范围内。由金（Au）制成的第二薄膜金属层可以进一步提高粘附性。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式