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1. 发明申请

US20080318404A1 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20080318404A1
公开(公告)日：2008-12-25
申请号：US12149572
申请日：2008-05-05
申请人： Masamichi Suzuki , Daisuke Matsushita , Takeshi Yamaguchi
发明人： Masamichi Suzuki , Daisuke Matsushita , Takeshi Yamaguchi
IPC分类号： H01L21/28
CPC分类号： H01L29/517 , H01L21/2807 , H01L21/28194 , H01L29/495 , H01L29/4966 , H01L29/4975 , H01L29/513
摘要： A semiconductor device includes a silicon substrate; an insulation layer formed on the silicon substrate, the insulation layer containing an oxide of an element of at least one kind selected from at least Hf, Zr, Ti and Ta; an electrode formed on the insulation layer; and a metal oxide layer containing La and Al, the metal oxide layer being provided at at least one of an interface between the silicon substrate and the insulation layer and an interface between the insulation layer and the electrode.
摘要翻译：半导体器件包括硅衬底; 形成在所述硅基板上的绝缘层，所述绝缘层含有至少一种选自Hf，Zr，Ti和Ta中的至少一种元素的氧化物; 形成在所述绝缘层上的电极; 以及包含La和Al的金属氧化物层，所述金属氧化物层设置在所述硅衬底和所述绝缘层之间的界面中的至少一个以及所述绝缘层和所述电极之间的界面。

2. 发明授权

US07833865B2 Method of manufacturing a semiconductor device including a LaAIO3 layer 有权
标题翻译：制造包括LaAlO 3层的半导体器件的方法
公开(公告)号：US07833865B2
公开(公告)日：2010-11-16
申请号：US12149572
申请日：2008-05-05
申请人： Masamichi Suzuki , Daisuke Matsushita , Takeshi Yamaguchi
发明人： Masamichi Suzuki , Daisuke Matsushita , Takeshi Yamaguchi
IPC分类号： H01L29/788
CPC分类号： H01L29/517 , H01L21/2807 , H01L21/28194 , H01L29/495 , H01L29/4966 , H01L29/4975 , H01L29/513
摘要： A semiconductor device includes a silicon substrate; an insulation layer formed on the silicon substrate, the insulation layer containing an oxide of an element of at least one kind selected from at least Hf, Zr, Ti and Ta; an electrode formed on the insulation layer; and a metal oxide layer containing La and Al, the metal oxide layer being provided at at least one of an interface between the silicon substrate and the insulation layer and an interface between the insulation layer and the electrode.
摘要翻译：半导体器件包括硅衬底; 形成在所述硅基板上的绝缘层，所述绝缘层含有至少一种选自Hf，Zr，Ti和Ta中的至少一种元素的氧化物; 形成在所述绝缘层上的电极; 以及包含La和Al的金属氧化物层，所述金属氧化物层设置在所述硅衬底和所述绝缘层之间的界面中的至少一个以及所述绝缘层和所述电极之间的界面。

3. 发明申请

US20060054961A1 Semiconductor device and method for manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060054961A1
公开(公告)日：2006-03-16
申请号：US11176271
申请日：2005-07-08
申请人： Masamichi Suzuki , Daisuke Matsushita , Takeshi Yamaguchi
发明人： Masamichi Suzuki , Daisuke Matsushita , Takeshi Yamaguchi
IPC分类号： H01L29/94
CPC分类号： H01L29/517 , H01L21/2807 , H01L21/28194 , H01L29/495 , H01L29/4966 , H01L29/4975 , H01L29/513
摘要： A semiconductor device includes a silicon substrate; an insulation layer formed on the silicon substrate, the insulation layer containing an oxide of an element of at least one kind selected from at least Hf, Zr, Ti and Ta; an electrode formed on the insulation layer; and a metal oxide layer containing La and Al, the metal oxide layer being provided at at least one of an interface between the silicon substrate and the insulation layer and an interface between the insulation layer and the electrode.
摘要翻译：半导体器件包括硅衬底; 形成在所述硅基板上的绝缘层，所述绝缘层含有至少一种选自Hf，Zr，Ti和Ta中的至少一种元素的氧化物; 形成在所述绝缘层上的电极; 以及包含La和Al的金属氧化物层，所述金属氧化物层设置在所述硅衬底和所述绝缘层之间的界面中的至少一个以及所述绝缘层和所述电极之间的界面。

4. 发明授权

US07662685B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07662685B2
公开(公告)日：2010-02-16
申请号：US11234217
申请日：2005-09-26
申请人： Masamichi Suzuki , Takeshi Yamaguchi
发明人： Masamichi Suzuki , Takeshi Yamaguchi
IPC分类号： H01L21/8242
CPC分类号： H01L21/02175 , C23C14/08 , C23C14/28 , H01L21/28194 , H01L21/31641 , H01L21/31645 , H01L21/31691 , H01L29/495 , H01L29/4966 , H01L29/517
摘要： A semiconductor device includes a Si substrate, a gate insulating film formed on the Si substrate, the gate insulating film being formed of an oxide film containing at least one selected from the group of Zr, Hf, Ti and a lanthanoid series metal, and having a single local minimal value on a high binding energy side of an inflection point in first differentiation of an O1s photoelectron spectrum, and a gate electrode formed on the gate insulating film.
摘要翻译：半导体器件包括Si衬底，形成在Si衬底上的栅极绝缘膜，所述栅极绝缘膜由包含选自Zr，Hf，Ti和镧系元素金属中的至少一种的氧化物膜形成，并且具有在O1s光电子光谱的第一微分中的拐点的高结合能量侧的单个局部最小值，以及形成在栅极绝缘膜上的栅电极。

5. 发明申请

US20060086993A1 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060086993A1
公开(公告)日：2006-04-27
申请号：US11234217
申请日：2005-09-26
申请人： Masamichi Suzuki , Takeshi Yamaguchi
发明人： Masamichi Suzuki , Takeshi Yamaguchi
IPC分类号： H01L29/94 , H01L29/788
CPC分类号： H01L21/02175 , C23C14/08 , C23C14/28 , H01L21/28194 , H01L21/31641 , H01L21/31645 , H01L21/31691 , H01L29/495 , H01L29/4966 , H01L29/517
摘要： A semiconductor device includes a Si substrate, a gate insulating film formed on the Si substrate, the gate insulating film being formed of an oxide film containing at least one selected from the group of Zr, Hf, Ti and a lanthanoid series metal, and having a single local minimal value on a high binding energy side of an inflection point in first differentiation of an O1s photoelectron spectrum, and a gate electrode formed on the gate insulating film.
摘要翻译：半导体器件包括Si衬底，形成在Si衬底上的栅极绝缘膜，所述栅极绝缘膜由包含选自Zr，Hf，Ti和镧系元素金属中的至少一种的氧化物膜形成，并且具有在O1s光电子光谱的第一微分中的拐点的高结合能量侧的单个局部最小值，以及形成在栅极绝缘膜上的栅电极。

6. 发明授权

US11159030B2 Battery pack, secondary battery protecting integrated circuit, battery monitoring module, and data reading method 有权
公开(公告)号：US11159030B2
公开(公告)日：2021-10-26
申请号：US15911308
申请日：2018-03-05
申请人： Takeshi Yamaguchi
发明人： Takeshi Yamaguchi
IPC分类号： H02J7/00 , H01M10/02 , H01M10/42 , H01M10/48 , H01M50/20 , H01M50/209
摘要： A battery pack includes a secondary battery, a secondary battery protecting integrated circuit configured to protect the secondary battery, at least one sensor configured to output a fault signal indicating sensing of a fault in the battery pack or an electronic apparatus including the battery pack, a detecting circuit configured to output a fault detection signal indicating a detection of the fault signal, a delay circuit configured to output a pulse delaying from the fault detection signal, and a counter configured to count a number of generating the pulse, the counter having at least N bits (N is an integer greater than 1), wherein the counter stops an operation until a count of 2(N-1).

7. 发明授权

US08842335B2 Apparatus, method, and non-transitory computer readable medium to achieve appropriate color reproduction characteristics 有权
标题翻译：装置，方法和非暂时的计算机可读介质，以实现适当的色彩再现特性
公开(公告)号：US08842335B2
公开(公告)日：2014-09-23
申请号：US12831653
申请日：2010-07-07
申请人： Takeshi Yamaguchi
发明人： Takeshi Yamaguchi
IPC分类号： H04N1/60
CPC分类号： H04N1/6088 , H04N1/6097
摘要： Disclosed is an information processing apparatus including: a control section to obtain output condition information to show an output condition when a color chart is output, to obtain colorimetric data obtained by measuring the color chart, to create a color conversion profile based on the obtained colorimetric data, and to embed the output condition information in the created color conversion profile according to an order determined in advance.
摘要翻译：公开了一种信息处理设备，包括：控制部分，用于获得输出条件信息，以便在输出彩色图表时显示输出条件，以获得通过测量色彩图得到的色度数据，以便根据获得的色度产生颜色转换曲线数据，并且根据预先确定的顺序将输出条件信息嵌入到所创建的颜色转换简档中。

8. 发明授权

US08797614B2 Creating a color conversion table by performing color conversion using a 3D and 1D table after limiting total color material amount 有权
标题翻译：通过在限制总颜色材料量之后使用3D和1D表执行颜色转换来创建颜色转换表
公开(公告)号：US08797614B2
公开(公告)日：2014-08-05
申请号：US13713195
申请日：2012-12-13
申请人： Takeshi Yamaguchi
发明人： Takeshi Yamaguchi
IPC分类号： H04N1/60
CPC分类号： H04N1/60 , H04N1/6019
摘要： Disclosed are a device, a method, and a storage medium to create a color conversion table. According to one implementation, a color conversion table creating device includes, a color material amount limiting processing section; a first color conversion processing section; a second color conversion processing section; a combining section; a color material amount limiting inverse conversion processing section; and an output value determining section. The color material amount limiting processing section performs color material amount limiting of an input value in the color conversion table. The color material limiting inverse conversion processing section performs inverse conversion of the color material amount limiting after color conversion and combining the CMYK components. The output value determining section sets the inverted CMYK color components as an output value in the color conversion table.
摘要翻译：公开了一种用于创建颜色转换表的设备，方法和存储介质。根据一个实施方案，一种颜色转换表创建装置包括：色材量限制处理部分; 第一颜色转换处理部; 第二颜色转换处理部; 组合部分; 色材量限制逆变换处理部; 和输出值确定部分。颜色材料量限制处理部分对颜色转换表中的输入值进行颜色量限制。色材限制逆变换处理部对颜色转换后的色材量限制进行逆变换，并组合CMYK成分。输出值确定部分将反转的CMYK颜色分量设置为颜色转换表中的输出值。

9. 发明授权

US08487345B2 Information recording and reproducing device 失效
标题翻译：信息记录和再现装置
公开(公告)号：US08487345B2
公开(公告)日：2013-07-16
申请号：US12885952
申请日：2010-09-20
申请人： Takayuki Tsukamoto , Tsukasa Nakai , Akira Kikitsu , Takeshi Yamaguchi , Sumio Ashida
发明人： Takayuki Tsukamoto , Tsukasa Nakai , Akira Kikitsu , Takeshi Yamaguchi , Sumio Ashida
IPC分类号： H01L21/02
CPC分类号： G11B11/002 , B82Y10/00 , G11B9/04 , G11B9/149 , G11B11/08 , G11C11/56 , G11C11/5678 , G11C13/0004 , G11C13/003 , G11C16/0483 , G11C2211/565 , G11C2213/53 , G11C2213/56 , G11C2213/71 , G11C2213/72 , G11C2213/75 , G11C2213/78 , G11C2213/79 , H01L27/2409 , H01L27/2481 , H01L45/06 , H01L45/1233 , H01L45/1246 , H01L45/1286 , H01L45/144 , H01L45/1683
摘要： According to one embodiment, an information recording and reproducing device includes a stacked body. The stacked body includes a first layer, a second layer and a recording layer provided between the first layer and the second layer. The recording layer includes a phase-change material and a crystal nucleus. The phase-change material is capable of reversely changing between a crystal state and an amorphous state by a current supplied via the first layer and the second layer. The crystal nucleus is provided in contact with the phase-change material and includes a crystal nucleus material having a crystal structure identical to a crystal structure of the crystal state of the phase-change material, and a crystal nucleus coating provided on a surface of the crystal nucleus material and having a composition different from a composition of the crystal nucleus material.
摘要翻译：根据一个实施例，信息记录和再现装置包括堆叠体。层叠体包括设置在第一层和第二层之间的第一层，第二层和记录层。记录层包括相变材料和晶核。相变材料能够通过经由第一层和第二层提供的电流在晶体状态和非晶状态之间反向变化。提供与相变材料接触的晶核，并且包括具有与相变材料的晶体状态的晶体结构相同的晶体结构的晶核材料，以及设置在相变材料的表面上的晶核涂层并且具有与晶核材料的组成不同的组成的晶核材料。

10. 发明授权

US08416606B2 Information recording and reproducing device 有权
标题翻译：信息记录和再现装置
公开(公告)号：US08416606B2
公开(公告)日：2013-04-09
申请号：US13040823
申请日：2011-03-04
申请人： Takayuki Tsukamoto , Tsukasa Nakai , Chikayoshi Kamata , Mariko Hayashi , Fumihiko Aiga , Takeshi Yamaguchi
发明人： Takayuki Tsukamoto , Tsukasa Nakai , Chikayoshi Kamata , Mariko Hayashi , Fumihiko Aiga , Takeshi Yamaguchi
IPC分类号： G11C11/00
CPC分类号： G11B9/04 , G11C13/0004 , G11C13/0007 , G11C13/003 , G11C2213/51 , G11C2213/56 , G11C2213/71 , G11C2213/72 , G11C2213/75 , G11C2213/79 , H01L27/101 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/126 , H01L45/147
摘要： According to one embodiment, an information recording and reproducing device includes a recording layer and a driving unit. The recording layer includes a first layer containing a first compound. The first compound includes a first positive ion element. The first positive ion element is made of a transition metal element and serves as a first positive ion. The second positive ion element serves as a second positive ion. The driving unit is configured to generate a phase change in the recording layer and to record information by at least one of application of a voltage and application of a current to the recording layer. The coordination number of the first positive ion element at a position of a second coordination of the second positive ion element is 80% or more and less than 100% of the coordination number when the first compound is assumed to be a perfect crystal.
摘要翻译：根据一个实施例，信息记录和再现装置包括记录层和驱动单元。记录层包括含有第一化合物的第一层。第一化合物包括第一正离子元素。第一正离子元件由过渡金属元素制成并用作第一正离子。第二正离子元素用作第二正离子。驱动单元被配置为在记录层中产生相变，并且通过施加电压和施加电流到记录层中的至少一个来记录信息。当假设第一化合物为完美晶体时，第二正离子元件的第二配位位置处的第一正离子元素的配位数为配位数的80％以上且小于配位数的100％。

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