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    • 9. 发明授权
    • Platinum group impurity recovery liquid and method for recovering platinum group impurity
    • 铂族杂质回收液及铂族杂质回收方法
    • US06444010B1
    • 2002-09-03
    • US09709288
    • 2000-11-13
    • Kaori Watanabe
    • Kaori Watanabe
    • C22B1100
    • C23F1/30C22B11/046H01L21/32134Y02P10/214
    • A mixed aqueous solution containing HCl with a concentration of 10 to 25% by weight, H2O2 with a concentration of 2 to 5% by weight, and HF with a concentration of 0.01 to 2% by weight or a mixed aqueous solution containing H2SO4 with a concentration of 65 to 82% by weight, H2O2 with a concentration of 4 to 16% by weight, and HF with a concentration of 0.01 to 2% by weight is used as a platinum group impurity recovery liquid. The recovery liquid is dripped onto a silicon substrate surface or a film thereon so as to scan the entire surface of the substrate with the droplets. As a result, the platinum group impurity is dissolved into the recovery liquid, and the platinum group impurity is thus recovered.
    • 浓度为10〜25重量%的浓度为2〜5重量%的H 2 O 2,浓度为0.01〜2重量%的HF和含有H 2 SO 4的混合水溶液的混合水溶液, 浓度为65〜82重量%,浓度为4〜16重量%的H 2 O 2,浓度为0.01〜2重量%的HF用作铂族杂质回收液。 将回收液滴在硅衬底表面或其上的膜上,以便用液滴扫描衬底的整个表面。 结果,铂族杂质溶解在回收液中,从而回收铂族杂质。
    • 10. 发明授权
    • Method for manufacturing semiconductor device or semiconductor wafer using a chucking unit
    • 使用夹持单元制造半导体器件或半导体晶片的方法
    • US07566663B2
    • 2009-07-28
    • US11641913
    • 2006-12-20
    • Kaori WatanabeHiroyuki ItohTakatoshi Hattori
    • Kaori WatanabeHiroyuki ItohTakatoshi Hattori
    • H01L21/302
    • H01L21/67051H01L21/67219
    • A method for manufacturing a semiconductor device or a semiconductor wafer using a chucking unit is provided to remove a slurry that adheres to the back surface of the semiconductor wafer. An edge portion of a semiconductor wafer is polished while a back surface of the semiconductor wafer is chucked to a chucking unit of a first polishing unit. The polished semiconductor wafer is then dechucked from the chucking unit of the first polishing unit. Next, a gap is formed above the chucking unit of the second polishing unit, and the semiconductor wafer is disposed therein. Water is discharged from the chucking unit of the second polishing unit to clean the back surface of the semiconductor wafer W. Thereafter, the back surface of the semiconductor wafer is chucked to the chucking unit of the second polishing unit, and the semiconductor wafer is polished.
    • 提供使用夹持单元制造半导体器件或半导体晶片的方法,以去除粘附到半导体晶片的背面的浆料。 抛光半导体晶片的边缘部分,同时将半导体晶片的背面夹持到第一抛光单元的夹持单元。 然后将抛光的半导体晶片从第一抛光单元的夹持单元中拔出。 接下来,在第二研磨单元的夹持单元的上方形成间隙,并且在其中配置半导体晶片。 水从第二研磨单元的夹持单元排出,以清洁半导体晶片W的背面。然后,将半导体晶片的背面夹持到第二研磨单元的夹持单元,并且半导体晶片被抛光 。