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1. 发明授权

US4651411A Method of manufacturing a MOS device wherein an insulating film is deposited in a field region 失效
标题翻译：在场区域中淀积绝缘膜的MOS器件的制造方法
公开(公告)号：US4651411A
公开(公告)日：1987-03-24
申请号：US744899
申请日：1985-06-17
申请人： Masami Konaka , Naoyuki Shigyo , Ryo Dang
发明人： Masami Konaka , Naoyuki Shigyo , Ryo Dang
IPC分类号： H01L29/78 , H01L21/76 , H01L21/762
CPC分类号： H01L21/76216 , Y10S148/05
摘要： A method of manufacturing a MOS device wherein a semiconductor substrate is selectively etched to form a groove in a field region and an element formation region surrounded by the groove such that an angle .theta. is formed between a wall of the groove and a first imaginary extension of a top surface of the element formation region, the angle .theta. satisfying the relation, 70.degree..ltoreq..theta..ltoreq.90.degree.. Then, a field insulating film is deposited in the groove, and a MOS transistor is formed in the element formation region. The element formation region has source, drain and channel regions of a field effect transistor therein and a gate electrode formed on a gate insulating film on the channel region. The gate electrode extends onto the surface portion of the field insulating film. The thickness of an upper portion of the field insulating film above a first imaginary extension of an interface between the gate insulating film and the gate electrode is formed smaller than that of a lower portion of the field insulating film below the first imaginary extension.
摘要翻译：一种制造MOS器件的方法，其中选择性地蚀刻半导体衬底以在场区域中形成沟槽，并且所述元件形成区域被所述沟槽包围，使得在所述沟槽的壁和所述沟槽的第一假想延伸部之间形成角度θ 元件形成区域的顶面，角度θ满足关系，70°θ= 90°。然后，在沟槽中沉积场绝缘膜，并且在元件形成区域中形成MOS晶体管。元件形成区域具有其中的场效应晶体管的源极，漏极和沟道区，以及形成在沟道区上的栅极绝缘膜上的栅电极。栅电极延伸到场绝缘膜的表面部分上。栅极绝缘膜和栅电极之间的界面的第一假想延伸部上方的场绝缘膜的上部的厚度形成为比第一假想延伸部以下的场绝缘膜的下部的厚度小。

2. 发明授权

US6016662A Vehicular air conditioning apparatus for effectively cooling a main cooling unit and an additional cooling unit 失效
标题翻译：用于有效冷却主冷却单元和附加冷却单元的车辆空调装置
公开(公告)号：US6016662A
公开(公告)日：2000-01-25
申请号：US867432
申请日：1997-06-02
申请人： Hisashi Tanaka , Yuichi Shirota , Hiroki Matsuo , Hikaru Sugi , Masami Konaka , Kazushi Yamamoto , Seiji Miwa , Tetsuji Nobuta
发明人： Hisashi Tanaka , Yuichi Shirota , Hiroki Matsuo , Hikaru Sugi , Masami Konaka , Kazushi Yamamoto , Seiji Miwa , Tetsuji Nobuta
IPC分类号： B60H1/00 , B60H1/32 , F25B5/02 , F25B41/04 , F25D16/00 , F25B5/00
CPC分类号： F25B5/02 , B60H1/005 , B60H1/323 , F25B41/04 , F25D16/00
摘要： A main evaporator cools a driver's compartment of a vehicle while a cooling storage evaporator cools cooling storage packs that are used in cooling a sleeping compartment. Refrigerant is supplied to the main evaporator at the actuation of a first solenoid valve while refrigerant is supplied to the cooling storage evaporator at the actuation of a second solenoid valve. If a first switch is being actuated after the completion of the cooling storage operation of the cooling storage evaporator on the cooling storage packs and the temperature of the cooling storage packs is no more than a preset temperature, for example, -5.degree. C., FIR control is performed for alternately actuating the first solenoid valve and the second solenoid valve based on a predetermined time ratio (for example, 10 minutes 15 seconds).
摘要翻译：主蒸发器冷却车辆的驾驶室，而冷却存储蒸发器冷却用于冷却睡房的冷却储存包。在第一电磁阀的致动下，制冷剂被供应到主蒸发器，同时制冷剂在致动第二电磁阀时被供应到冷却储存蒸发器。如果在冷却储存包装上的冷却储存蒸发器的冷却存储操作完成之后第一开关被致动，并且冷却储存包装件的温度不超过预设温度，例如-5℃，执行FIR控制以基于预定时间比（例如，10分15秒）交替地致动第一电磁阀和第二电磁阀。

3. 发明授权

US5644929A Heat regenerating type cooling apparatus 失效
标题翻译：热再生式冷却装置
公开(公告)号：US5644929A
公开(公告)日：1997-07-08
申请号：US573276
申请日：1995-12-15
申请人： Hisashi Tanaka , Yuichi Shirota , Hikaru Sugi , Masami Konaka , Kazushi Yamamoto , Seiji Miwa , Manabu Miyata
发明人： Hisashi Tanaka , Yuichi Shirota , Hikaru Sugi , Masami Konaka , Kazushi Yamamoto , Seiji Miwa , Manabu Miyata
IPC分类号： B60H1/00 , B60H1/32 , F25D16/00 , F28D20/02 , F25D17/04
CPC分类号： F28D20/02 , B60H1/005 , B60H1/323 , F25D16/00 , F28D2020/0008 , Y02E60/145
摘要： A heat regenerating type cooling apparatus includes a heat regenerating evaporator encased in a case and provided with a tube for a cooling medium and a heat regenerating pack arranged to be in close contact with the outer surface of the tube of the heat regenerating evaporator. The heat regenerating evaporator conducts a refrigeration cycle while a vehicle is running and cools the heat regenerating pack so as to cause a heat regenerating material within the pack to freeze When the vehicle is parked, a blower is operated to cause a current of air that is cooled by the heat regenerating pack due to heat exchange between the current of air and the frozen heat regenerating material in the heat regenerating pack. The cold air is blown out into an objective cooling area, such as a sleeping area of the vehicle, from a blowing port so that the objective cooling area is air-conditioned, and the upper half of the body of a sleeping person in the area is effectively exposed to air-conditioned air.
摘要翻译：一种热再生式冷却装置，包括：壳体内装有冷却介质用管的热再生蒸发器和与再生蒸发器管的外表面紧密接触的热再生组件。热再生蒸发器在车辆行驶时进行制冷循环，并冷却热再生组件，以使组件内的热再生材料冷冻。当车辆停放时，运行鼓风机以产生空气的电流由于热再生组件中的空气与冷热再生材料之间的热交换而被热再生组件冷却。冷空气从吹风口吹入目标冷却区域，例如车辆的睡眠区域，使得客观冷却区域被空调，并且该区域中的睡眠者的身体的上半部分有效地暴露于空调空气。

4. 发明授权

US4523213A MOS Semiconductor device and method of manufacturing the same 失效
标题翻译： MOS半导体器件及其制造方法
公开(公告)号：US4523213A
公开(公告)日：1985-06-11
申请号：US396843
申请日：1982-07-09
申请人： Masami Konaka , Hiroshi Iwai , Yoshio Nishi
发明人： Masami Konaka , Hiroshi Iwai , Yoshio Nishi
IPC分类号： H01L21/316 , H01L21/265 , H01L21/336 , H01L21/8247 , H01L27/00 , H01L29/06 , H01L29/10 , H01L29/78 , H01L29/786 , H01L29/788 , H01L29/792
CPC分类号： H01L29/66772 , H01L21/26533 , H01L29/0649 , H01L29/0653 , H01L29/1083 , H01L29/78 , H01L29/78654 , Y10S148/082
摘要： An MOS semiconductor device, wherein a buried region of silicon oxide or silicon nitride extends partly over the bottom plane of the channel region of an MOS transistor.
摘要翻译：一种MOS半导体器件，其中氧化硅或氮化硅的掩埋区域部分地延伸到MOS晶体管的沟道区的底部平面上。

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