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    • 1. 发明授权
    • X-ray lithography mask, light exposure apparatus and process therefore
    • 因此,X射线光刻掩模,曝光装置和工艺
    • US5444753A
    • 1995-08-22
    • US203752
    • 1994-03-01
    • Masami HayashidaYutaka Watanabe
    • Masami HayashidaYutaka Watanabe
    • G03F1/22G03F7/20H01L21/027G21K5/00
    • G03F7/70075G03F7/702
    • Disclosed are an X-ray lithography mask, an exposure apparatus and an exposure process such as an X-ray lithography exposure apparatus and an X-ray lithography exposure process. An X-ray lithography mask includes an X-ray transmission membrane, a transfer pattern depicted on the X-ray transmission membrane and a frame for supporting the X-ray transmission membrane. The transfer pattern is depicted on the basis of a changing direction of a film thickness profile of the X-ray transmission membrane. In the exposure apparatus and process, a changing direction of an intensity profile of a radiation light illuminated on an exposure area of a mask is coincident with a changing direction of a film thickness profile of a light transmission membrane on the mask and an illumination time of the radiation light for the exposure area is changed on the basis of the intensity profile of the radiation light and the thickness profile of the light transmission membrane so that the intensity of a transfer patter image formed by the transmission of the radiation light through the light transmission membrane is rendered uniform.
    • 公开了X射线光刻掩模,曝光装置和曝光处理,例如X射线光刻曝光装置和X射线光刻曝光工艺。 X射线光刻掩模包括X射线透射膜,X射线透射膜上所示的转印图案和用于支撑X射线透过膜的框架。 基于X射线透过膜的膜厚分布的变化方向来描绘转印图案。 在曝光装置和处理中,照射在掩模的曝光区域上的辐射光的强度分布的改变方向与掩模上的透光膜的膜厚分布的变化方向一致,并且照射时间 基于辐射光的强度分布和透光膜的厚度分布来改变曝光区域的辐射光,使得通过透射光透过而形成的转印图案图像的强度 膜均匀。