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    • 1. 发明授权
    • Battery charger with charging current controller
    • 电池充电器带充电电流控制器
    • US5289101A
    • 1994-02-22
    • US690563
    • 1991-04-24
    • Masami FurutaTakao IwatsukiMasatoshi SugiuraToshio MatsumotoHideki WatanabeHideiki Niwa
    • Masami FurutaTakao IwatsukiMasatoshi SugiuraToshio MatsumotoHideki WatanabeHideiki Niwa
    • H02J7/02H02J7/00
    • H02J7/022
    • A battery charger includes a transformer having a primary coil and a secondary coil, a switch for duty control of a current flowing through the primary coil of the transformer, a detector for detecting a value of a current flowing through the secondary coil of the transformer, and a secondary controller for receiving the detected value from the detector and for outputting a charge control signal. The pulse of the charge control signal is modulated in accordance with the detected value by the detector. The battery charger further includes a light emitter controlled by the charge control signal for flickering, a phototransistor turning on and off according to the flickering of the light emitter, and a primary controller for converting the ratio of the time during on of the phototransistor to the time during off of the phototransistor into an analog value, and for outputting to the switch a pulse signal which is modulated to have a duty cycle corresponding to the analog value so as to control a duty cycle of the switch.
    • 电池充电器包括具有初级线圈和次级线圈的变压器,用于对流过变压器的初级线圈的电流进行占空比控制的开关,用于检测流过变压器的次级线圈的电流的值的检测器, 以及二次控制器,用于从检测器接收检测值并输出充电控制信号。 根据检测器的检测值对充电控制信号的脉冲进行调制。 电池充电器还包括由用于闪烁的充电控制信号控制的光发射器,根据光发射器的闪烁导通和关断的光电晶体管,以及用于将光电晶体管的导通时间的比率转换为 将光电晶体管关闭期间的时间变成模拟值,并且向开关输出被调制为具有对应于模拟值的占空比的脉冲信号,以便控制开关的占空比。
    • 4. 发明授权
    • Television and electronic device
    • 电视和电子设备
    • US09148713B2
    • 2015-09-29
    • US13489648
    • 2012-06-06
    • Tomofumi MiyamotoHideki Watanabe
    • Tomofumi MiyamotoHideki Watanabe
    • H04R1/02H04R5/02
    • H04R1/02H04R1/025
    • According to at least one embodiment, a television includes a housing further including a pair of corner portions and an enclosed space on an inner side thereof, a pair of speaker boxes housed in the enclosed space in vicinities of the corner portions, a pair of speakers housed in the speaker boxes respectively in a direction which crosses a thickness direction of the housing, and each of the speaker boxes further includes a first duct to guide sounds from a first side of the respective speaker to the respective first opening portion and a second duct to guide sounds from a second side of the respective speaker towards the enclosed space.
    • 根据至少一个实施例,电视机包括还包括一对角部和在其内侧上的封闭空间的壳体,一对容纳在角部附近的封闭空间中的扬声器箱,一对扬声器 分别沿着与壳体的厚度方向交叉的方向容纳在扬声器箱中,并且每个扬声器盒还包括第一导管,用于将声音从相应扬声器的第一侧引导到相应的第一开口部分,第二导管 以将声音从相应扬声器的第二侧引向封闭空间。
    • 7. 发明授权
    • Mode-locked semiconductor laser device and driving method thereof
    • 锁模半导体激光器件及其驱动方法
    • US08442079B2
    • 2013-05-14
    • US13035540
    • 2011-02-25
    • Tomoyuki OkiMasaru KuramotoMasao IkedaTakao MiyajimaHideki WatanabeHiroyuki Yokoyama
    • Tomoyuki OkiMasaru KuramotoMasao IkedaTakao MiyajimaHideki WatanabeHiroyuki Yokoyama
    • H01S3/098
    • Provided is a driving method of a mode-locked semiconductor laser device comprising a laminated structure in which a first compound semiconductor layer, a third compound semiconductor layer having an emission region and a second compound semiconductor layer are successively laminated, a second electrode, and a first electrode. The laminated structure is formed on a compound semiconductor substrate having polarity, the third compound semiconductor layer includes a quantum well structure having a well layer and a barrier layer. The well layer has a depth of 1 nm or more and 10 nm or less. The barrier layer has an impurity doping density of 2×1018 cm−3 or more and 1×1020 cm−3 or less. An optical pulse is generated in the emission region by passing a current from the second electrode to the first electrode via the laminated structure.
    • 提供了一种锁模半导体激光器件的驱动方法,其包括层叠结构,其中第一化合物半导体层,具有发射区域的第三化合物半导体层和第二化合物半导体层被连续层压,第二电极和 第一电极。 层叠结构形成在具有极性的化合物半导体基板上,第三化合物半导体层包括具有阱层和阻挡层的量子阱结构。 阱层的深度为1nm以上且10nm以下。 势垒层的杂质掺杂密度为2×1018cm-3以上且1×1020cm-3以下。 通过将电流从第二电极通过层压结构传递到第一电极,在发射区域中产生光脉冲。