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1. 发明申请

US20130075154A1 SILICON-CONTAINING CURABLE COMPOSITION, CURED PRODUCT OF THE SILICON-CONTAINING CURABLE COMPOSITION AND LEAD FRAME SUBSTRATE FORMED OF THE SILICON-CONTAINING CURABLE COMPOSITION 有权
标题翻译：含硅可固化组合物，含硅固化组合物的固化产物和含硅固化组合物的引线框架基板
公开(公告)号：US20130075154A1
公开(公告)日：2013-03-28
申请号：US13700370
申请日：2011-06-06
申请人： Masako Saito , Ichiro Hiratsuka , Masahiro Wada , Ryota Chiba , Takuya Kanazawa , Osamu Yoshioka , Takehito Tsukamoto , Junko Toda
发明人： Masako Saito , Ichiro Hiratsuka , Masahiro Wada , Ryota Chiba , Takuya Kanazawa , Osamu Yoshioka , Takehito Tsukamoto , Junko Toda
IPC分类号： C08L83/06 , H01L23/057
CPC分类号： C08L83/06 , C08G77/12 , C08G77/20 , C08K5/0025 , C08K5/14 , C08K5/5425 , C08K5/549 , C08L83/04 , H01L23/057 , H01L23/49861 , H01L33/56 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： A curable composition includes: 100 parts by mass of a silicon-containing polymer having a Mw of 3,000 to 100,000 obtainable by hydrolysis-condensation of an organosilane mixture including R1SiX3, R2SiX3, R3R4SiX2 and R5SiX3, the total of R2SiX3 and R3R4SiX2 being 5 to 60 mol %, optionally a prepolymer, optionally a cyclic siloxane compound, 0.0001 to 10 parts by mass of an organic peroxide and optionally a metal catalyst, and 10 to 1,500 parts by mass of a filler, wherein R1 is a C2-6 alkenyl group, R2 is a C1-6 alkyl group, R3 and R4 are each a C1-6 alkyl group, R5 is a phenyl group optionally substituted with a C1-6 alkyl group, and X is a C1-6 alkoxy group, one or more of R2 to R4 is a methyl group, f represents a number of 2 to 10, g represents a number of 0 to 8, and n represents 1 or 2.
摘要翻译：可固化组合物包括：通过包括R1SiX3，R2SiX3，R3R4SiX2和R5SiX3的有机硅烷混合物的水解缩合得到的Mw为3,000〜100,000的含硅聚合物100质量份，R2SiX3和R3R4SiX2的合计为5〜60 mol％，任选的预聚物，任选的环状硅氧烷化合物，0.0001-10质量份有机过氧化物和任选的金属催化剂，以及10-1500质量份填料，其中R1是C2-6链烯基， R2是C1-6烷基，R3和R4各自是C1-6烷基，R5是任选被C 1-6烷基取代的苯基，X是C 1-6烷氧基，一个或多个 R 2〜R 4为甲基，f表示2〜10的数，g表示0〜8的数，n表示1或2。

2. 发明授权

US08809478B2 Silicon-containing curable composition, cured product of the silicon-containing curable composition and lead frame substrate formed of the silicon-containing curable composition 有权
标题翻译：含硅可固化组合物，含硅可固化组合物的固化产物和由含硅可固化组合物形成的引线框架基材
公开(公告)号：US08809478B2
公开(公告)日：2014-08-19
申请号：US13700370
申请日：2011-06-06
申请人： Masako Saito , Ichiro Hiratsuka , Masahiro Wada , Ryota Chiba , Takuya Kanazawa , Osamu Yoshioka , Takehito Tsukamoto , Junko Toda
发明人： Masako Saito , Ichiro Hiratsuka , Masahiro Wada , Ryota Chiba , Takuya Kanazawa , Osamu Yoshioka , Takehito Tsukamoto , Junko Toda
IPC分类号： C08G77/08 , C08L83/04 , H01L23/057 , H01L23/498 , C08L83/06 , C08K5/14 , C08K5/549 , H01L33/56 , C08K5/5425 , C08K5/00 , C08G77/20 , C08G77/12
CPC分类号： C08L83/06 , C08G77/12 , C08G77/20 , C08K5/0025 , C08K5/14 , C08K5/5425 , C08K5/549 , C08L83/04 , H01L23/057 , H01L23/49861 , H01L33/56 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： A curable composition includes: 100 parts by mass of a silicon-containing polymer having a Mw of 3,000 to 100,000 obtainable by hydrolysis-condensation of an organosilane mixture including R1SiX3, R2SiX3, R3R4SiX2 and R5SiX3, the total of R2SiX3 and R3R4SiX2 being 5 to 60 mol %, optionally a prepolymer, optionally a cyclic siloxane compound, 0.0001 to 10 parts by mass of an organic peroxide and optionally a metal catalyst, and 10 to 1,500 parts by mass of a filler, wherein R1 is a C2-6 alkenyl group, R2 is a C1-6 alkyl group, R3 and R4 are each a C1-6 alkyl group, R5 is a phenyl group optionally substituted with a C1-6 alkyl group, and X is a C1-6 alkoxy group, one or more of R2 to R4 is a methyl group, f represents a number of 2 to 10, g represents a number of 0 to 8, and n represents 1 or 2.
摘要翻译：可固化组合物包括：通过包括R1SiX3，R2SiX3，R3R4SiX2和R5SiX3的有机硅烷混合物的水解缩合得到的Mw为3,000〜100,000的含硅聚合物100质量份，R2SiX3和R3R4SiX2的合计为5〜60 mol％，任选的预聚物，任选的环状硅氧烷化合物，0.0001-10质量份有机过氧化物和任选的金属催化剂，以及10-1500质量份填料，其中R1是C2-6链烯基， R2是C1-6烷基，R3和R4各自是C1-6烷基，R5是任选被C 1-6烷基取代的苯基，X是C 1-6烷氧基，一个或多个 R 2〜R 4为甲基，f表示2〜10的数，g表示0〜8的数，n表示1或2。

3. 发明授权

US08546940B2 Manufacturing method of lead frame substrate and semiconductor apparatus 失效
标题翻译：引线框架基板和半导体装置的制造方法
公开(公告)号：US08546940B2
公开(公告)日：2013-10-01
申请号：US12998099
申请日：2009-09-29
申请人： Susumu Maniwa , Takehito Tsukamoto , Junko Toda
发明人： Susumu Maniwa , Takehito Tsukamoto , Junko Toda
IPC分类号： H01L23/52 , H01L23/48 , H01L29/40
CPC分类号： H01L21/48 , H01L21/4828 , H01L23/3121 , H01L23/4951 , H01L23/49513 , H01L23/49517 , H01L23/49861 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L2224/32057 , H01L2224/32225 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2224/83385 , H01L2224/85001 , H01L2924/00014 , H01L2924/014 , H01L2924/12042 , H01L2924/15183 , H01L2924/15311 , H01L2924/15747 , H01L2924/181 , H01L2924/00012 , H01L2924/00 , H01L2924/00015 , H01L2224/05599
摘要： A lead frame substrate, including: a metal plate with a first surface and a second surface; a connection post formed on the first surface; wiring formed on the second surface; and a pre-molding resin layer, in which a thickness of the pre-molding resin layer is the same as a height of the connection post.
摘要翻译：一种引线框架基板，包括：具有第一表面和第二表面的金属板; 形成在第一表面上的连接柱; 布线形成在第二表面上; 和预成型树脂层的厚度与连接柱的高度相同的预成型树脂层。

4. 发明申请

US20120018860A1 METHOD FOR MANUFACTURING SUBSTRATE FOR SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR DEVICE 有权
标题翻译：用于制造半导体元件的衬底的方法和半导体器件
公开(公告)号：US20120018860A1
公开(公告)日：2012-01-26
申请号：US13249702
申请日：2011-09-30
申请人： Susumu MANIWA , Takehito Tsukamoto , Junko Toda
发明人： Susumu MANIWA , Takehito Tsukamoto , Junko Toda
IPC分类号： H01L23/495 , H01L21/48
CPC分类号： H01L23/49861 , H01L21/486 , H01L24/45 , H01L24/48 , H01L24/73 , H01L2224/32225 , H01L2224/32245 , H01L2224/45144 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2924/12042 , H01L2924/15183 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2924/00015
摘要： Provided is a manufacturing method of a substrate for a semiconductor element including the steps of: providing a first photosensitive resin layer on a first surface of a metal plate; providing a second photosensitive resin layer on a second surface different from the first surface of the metal plate; forming a first etching mask for forming a connection post on the first surface of the metal plate; forming a second etching mask for forming a wiring pattern on the second surface of the metal plate; forming the connection post by performing an etching from the first surface to a midway of the metal plate; filling in a premold resin to a portion of the first surface where the connection post does not exist; processing so that a height of the connection post of the first surface is lower than a height of the premold resin surrounding the connection post; and forming the wiring pattern by performing an etching on the second surface.
摘要翻译：本发明提供一种半导体元件用基板的制造方法，其特征在于，包括：在金属板的第一面上设置第一感光性树脂层; 在与金属板的第一表面不同的第二表面上提供第二感光性树脂层; 形成用于在金属板的第一表面上形成连接柱的第一蚀刻掩模; 形成用于在所述金属板的第二表面上形成布线图案的第二蚀刻掩模; 通过从第一表面到金属板的中间进行蚀刻来形成连接柱; 将预糊树脂填充到不存在连接柱的第一表面的一部分; 处理，使得第一表面的连接柱的高度低于围绕连接柱的预制树脂的高度; 以及通过在所述第二表面上进行蚀刻来形成所述布线图案。

5. 发明授权

US08558363B2 Lead frame substrate and method of manufacturing the same, and semiconductor device 失效
标题翻译：引线框架基板及其制造方法以及半导体器件
公开(公告)号：US08558363B2
公开(公告)日：2013-10-15
申请号：US13064205
申请日：2011-03-10
申请人： Takehito Tsukamoto , Susumu Maniwa , Junko Toda , Yasuhiro Sakai
发明人： Takehito Tsukamoto , Susumu Maniwa , Junko Toda , Yasuhiro Sakai
IPC分类号： H01L23/495
CPC分类号： H01L21/4832 , H01L23/3107 , H01L23/49541 , H01L24/32 , H01L24/45 , H01L24/48 , H01L2224/32057 , H01L2224/32245 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83385 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/15183 , H01L2924/181 , H01L2924/351 , H01L2924/00 , H01L2924/20753 , H01L2924/00015 , H01L2224/05599 , H01L2924/00012
摘要： A lead frame substrate, includes: a metal plate having first and second surfaces; a semiconductor element mounting section, semiconductor element electrode connection terminals, and a first outer frame section formed on the first surface; external connection terminals formed on the second surface and electrically connected with the semiconductor element electrode connection terminals; a second outer frame section formed on the second surface; and a resin layer formed on a gap between the first outer frame and the second outer frame. Each external connection terminal buried in the resin layer has at least one projection formed on a side surface thereof throughout a side lower portion of the first surface.
摘要翻译：引线框架基板，包括：具有第一和第二表面的金属板; 半导体元件安装部，半导体元件电极连接端子和形成在第一面上的第一外框部; 外部连接端子，形成在第二表面上并与半导体元件电极连接端子电连接; 形成在所述第二表面上的第二外框架部分; 以及形成在第一外框和第二外框之间的间隙上的树脂层。埋在树脂层中的每个外部连接端子在其第一表面的整个侧下部具有形成在其侧表面上的至少一个突起。

6. 发明申请

US20110169153A1 Lead frame substrate and method of manufacturing the same 有权
标题翻译：引线框架基板及其制造方法
公开(公告)号：US20110169153A1
公开(公告)日：2011-07-14
申请号：US13064314
申请日：2011-03-17
申请人： Takehito Tsukamoto , Susumu Maniwa , Junko Toda
发明人： Takehito Tsukamoto , Susumu Maniwa , Junko Toda
IPC分类号： H01L23/495 , H01L21/48
CPC分类号： H01L21/4832 , H01L23/3121 , H01L24/73 , H01L2224/32245 , H01L2224/45144 , H01L2224/48247 , H01L2224/73265 , H01L2924/00012 , H01L2924/00
摘要： A method includes: forming a photoresist pattern to form each of a semiconductor element mounting section on which a semiconductor element is mounted, semiconductor element electrode connection terminals for connection with electrodes of the semiconductor element, and a first outer frame section on a first surface of a metal plate; forming a photoresist pattern to form each of external connection terminals, a second outer frame section, and grooves in at least a part of the second outer frame section on a second surface of the metal plate; etching a metal plate exposing section, in which the metal plate of the second surface is exposed, to form holes that do not pass through the metal plate exposing section and grooves that run from an inside to an outside of the second outer frame section; coating a pre-mold resin on the holes and the grooves, and heating the pre-mold resin under pressure using a flat-bed press to form a resin layer; and etching the first surface to form the semiconductor element mounting section, the semiconductor element electrode connection terminals electrically connected with the external connection terminals, and the first outer frame section.
摘要翻译：一种方法包括：形成光致抗蚀剂图案以形成其上安装有半导体元件的半导体元件安装部分，用于与半导体元件的电极连接的半导体元件电极连接端子和在第一表面上的第一外部框架部分金属板; 形成光致抗蚀剂图案以在所述金属板的第二表面上形成外部连接端子，第二外部框架部分和所述第二外部框架部分的至少一部分中的凹槽中的每一个; 蚀刻金属板暴露部分，其中第二表面的金属板被暴露，以形成不穿过金属板暴露部分的孔和从第二外框架部分的内部延伸到外部的槽; 在孔和槽上涂覆预模制树脂，并使用平板压机在压力下加热预模制树脂以形成树脂层; 并且蚀刻所述第一表面以形成所述半导体元件安装部，所述半导体元件电极连接端子与所述外部连接端子电连接，所述第一外部框架部分。

7. 发明申请

US20110163435A1 Lead frame substrate and method of manufacturing the same, and semiconductor device 失效
标题翻译：引线框架基板及其制造方法以及半导体器件
公开(公告)号：US20110163435A1
公开(公告)日：2011-07-07
申请号：US13064205
申请日：2011-03-10
申请人： Takehito Tsukamoto , Susumu Maniwa , Junko Toda , Yasuhiro Sakai
发明人： Takehito Tsukamoto , Susumu Maniwa , Junko Toda , Yasuhiro Sakai
IPC分类号： H01L23/495 , H01L21/48
CPC分类号： H01L21/4832 , H01L23/3107 , H01L23/49541 , H01L24/32 , H01L24/45 , H01L24/48 , H01L2224/32057 , H01L2224/32245 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83385 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/15183 , H01L2924/181 , H01L2924/351 , H01L2924/00 , H01L2924/20753 , H01L2924/00015 , H01L2224/05599 , H01L2924/00012
摘要： A lead frame substrate, includes: a metal plate having first and second surfaces; a semiconductor element mounting section, semiconductor element electrode connection terminals, and a first outer frame section formed on the first surface; external connection terminals formed on the second surface and electrically connected with the semiconductor element electrode connection terminals; a second outer frame section formed on the second surface; and a resin layer formed on a gap between the first outer frame and the second outer frame. Each external connection terminal buried in the resin layer has at least one projection formed on a side surface thereof throughout a side lower portion of the first surface.
摘要翻译：引线框架基板，包括：具有第一和第二表面的金属板; 半导体元件安装部，半导体元件电极连接端子和形成在第一面上的第一外框部; 外部连接端子，形成在第二表面上并与半导体元件电极连接端子电连接; 形成在所述第二表面上的第二外框架部分; 以及形成在第一外框和第二外框之间的间隙上的树脂层。埋在树脂层中的每个外部连接端子在其第一表面的整个侧下部具有形成在其侧表面上的至少一个突起。

8. 发明授权

US08535987B2 Method of manufacturing substrate for semiconductor element, and semiconductor device 有权
标题翻译：半导体元件用基板的制造方法及半导体装置
公开(公告)号：US08535987B2
公开(公告)日：2013-09-17
申请号：US13249925
申请日：2011-09-30
申请人： Susumu Maniwa , Takehito Tsukamoto , Junko Toda
发明人： Susumu Maniwa , Takehito Tsukamoto , Junko Toda
IPC分类号： H01L21/00
CPC分类号： H01L21/486 , H01L23/49861 , H01L24/45 , H01L24/48 , H01L24/73 , H01L2224/32245 , H01L2224/45144 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2924/00015 , H01L2224/45015 , H01L2924/207
摘要： A manufacturing method of a substrate for a semiconductor element, wherein a first step includes: forming a first and second photosensitive resin layer on a first and second surface of a metal plate, respectively; forming a first and second resist pattern on the first and second surface, for forming a connection post and a wiring pattern, respectively. A second step includes: forming the connection post and wiring pattern; filling in a premold liquid resin to the first surface which was etched; forming a premold resin layer by hardening the premold liquid resin; performing a grinding operation on the first surface, and exposing an upper bottom surface of the connection post from the premold resin layer. A groove structure is formed by the first and second steps, wherein a depth of the groove is up to an intermediate part in a thickness direction of the metal plate.
摘要翻译：一种半导体元件用基板的制造方法，其特征在于，第一工序包括：在金属板的第一和第二表面上分别形成第一和第二感光性树脂层; 在第一和第二表面上形成第一和第二抗蚀剂图案，分别形成连接柱和布线图案。第二步包括：形成连接柱和布线图案; 将预浸液体树脂填充到被蚀刻的第一表面上; 通过硬化预制液体树脂来形成预制树脂层; 在所述第一表面上执行研磨操作，以及将所述连接柱的上底表面暴露于所述预制树脂层。通过第一和第二步骤形成凹槽结构，其中凹槽的深度直到金属板的厚度方向上的中间部分。

9. 发明授权

US08390105B2 Lead frame substrate, manufacturing method thereof, and semiconductor apparatus 有权
标题翻译：引线框架基板及其制造方法以及半导体装置
公开(公告)号：US08390105B2
公开(公告)日：2013-03-05
申请号：US12998098
申请日：2009-09-28
申请人： Junko Toda , Susumu Maniwa , Yasuhiro Sakai , Takehito Tsukamoto
发明人： Junko Toda , Susumu Maniwa , Yasuhiro Sakai , Takehito Tsukamoto
IPC分类号： H01L23/495 , H01L21/00
CPC分类号： H01L21/4828 , H01L23/3107 , H01L23/49548 , H01L23/49861 , H01L23/562 , H01L24/32 , H01L24/45 , H01L24/48 , H01L2224/32057 , H01L2224/32225 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2224/83385 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/15183 , H01L2924/15788 , H01L2924/181 , H01L2924/20106 , H01L2924/20753 , H01L2924/351 , H01L2924/00 , H01L2924/00012
摘要： A lead frame substrate, including: a metal plate having a first surface and a second surface; a semiconductor element mount portion and a semiconductor element electrode connection terminal that are formed on the first surface; an external connection terminal formed on the second surface and electrically connected to the semiconductor element electrode connection terminal; a conducting wire that connects the semiconductor element electrode connection terminal and the external connection terminal to each other; a resin layer formed on the metal plate; a hole portion that is partly formed in the second surface of the metal plate and does not penetrate the metal plate; and a plurality of protrusions that are formed on a bottom surface of the hole portion and protrude in a direction away from the metal plate, the protrusions having a height lower than a position of the second surface, not being in electrical conduction with the conducting wire, and being dispersed separately.
摘要翻译：一种引线框架基板，包括：具有第一表面和第二表面的金属板; 半导体元件安装部分和半导体元件电极连接端子，形成在第一表面上; 外部连接端子，其形成在所述第二表面上并电连接到所述半导体元件电极连接端子; 将所述半导体元件电极连接端子和所述外部连接端子彼此连接的导线; 形成在金属板上的树脂层; 部分地形成在所述金属板的第二表面中并且不穿透所述金属板的孔部; 以及多个突起，其形成在所述孔部的底面上并且沿远离所述金属板的方向突出，所述突起的高度低于所述第二表面的位置，不与所述导线导通并分开分散。

10. 发明授权

US08319322B2 Substrate for semiconductor element, method for manufacturing substrate for semiconductor element, and semiconductor device 有权
标题翻译：半导体元件用基板，半导体元件用基板的制造方法以及半导体装置
公开(公告)号：US08319322B2
公开(公告)日：2012-11-27
申请号：US13242099
申请日：2011-09-23
申请人： Junko Toda , Susumu Maniwa , Takehito Tsukamoto
发明人： Junko Toda , Susumu Maniwa , Takehito Tsukamoto
IPC分类号： H01L23/495
CPC分类号： H01L24/27 , H01L21/4828 , H01L23/3121 , H01L23/49548 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L2224/32057 , H01L2224/32225 , H01L2224/45015 , H01L2224/451 , H01L2224/45144 , H01L2224/48227 , H01L2224/48257 , H01L2224/73265 , H01L2224/83385 , H01L2924/00014 , H01L2924/01006 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/181 , H01L2924/351 , H01L2924/00 , H01L2224/32245 , H01L2224/48247 , H01L2924/00012 , H01L2924/20756 , H01L2924/00015 , H01L2924/20753
摘要： Provided is a manufacturing method of a semiconductor element substrate including: a step of forming a first photoresist pattern on a first surface of a metallic plate, to form a semiconductor element mounting part, a semiconductor element electrode connection terminal, a wiring, an outer frame part, and a slit; a step of forming a second photoresist pattern on the second surface of the metallic plate; a step of forming the slit by half etching to connect the metallic chip with a four corners of the outer frame part; a step of forming a plurality of concaved parts on the second surface of the metallic plate; a step of forming a resin layer by injecting a resin to the plurality of concaved parts; and a step of etching the first surface of the metallic plate and forming the semiconductor element electrode connection terminal and the outer frame.
摘要翻译：提供一种半导体元件基板的制造方法，包括：在金属板的第一面上形成第一光致抗蚀剂图案，形成半导体元件安装部，半导体元件电极连接端子，布线，外框部分和狭缝; 在金属板的第二表面上形成第二光致抗蚀剂图案的步骤; 通过半蚀刻形成狭缝以将金属芯片与外框架部分的四个角连接的步骤; 在金属板的第二表面上形成多个凹部的步骤; 通过向所述多个凹部注入树脂来形成树脂层的工序; 以及蚀刻金属板的第一表面并形成半导体元件电极连接端子和外框架的步骤。

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