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1. 发明授权

US06258666B1 Method of producing semiconductor thin film and method of producing solar cell using same 失效
标题翻译：制造半导体薄膜的方法和使用其制造太阳能电池的方法
公开(公告)号：US06258666B1
公开(公告)日：2001-07-10
申请号：US09333019
申请日：1999-06-15
申请人： Masaki Mizutani , Isao Tanikawa , Katsumi Nakagawa , Tatsumi Shoji , Noritaka Ukiyo , Yukiko Iwasaki
发明人： Masaki Mizutani , Isao Tanikawa , Katsumi Nakagawa , Tatsumi Shoji , Noritaka Ukiyo , Yukiko Iwasaki
IPC分类号： H01L21336
CPC分类号： H01L21/76251 , C23C16/01 , C30B29/60 , C30B33/00 , H01L31/1892 , Y02E10/50 , Y10S156/93 , Y10S156/942 , Y10T156/1179 , Y10T156/1978
摘要： Provided is a method of producing a semiconductor thin film wherein while a semiconductor thin film formed on a substrate is supported on a curved surface of a support member having the curved surface, the support member is rotated, thereby peeling the semiconductor thin film away from the substrate. Also provided is a method of producing a semiconductor thin film having the step of peeling a semiconductor thin film formed on a substrate away from the substrate, wherein the peeling step is carried out after the substrate is secured on a substrate support member without an adhesive. These provide the method of peeling the semiconductor thin film away from the substrate without damage and the method of holding the substrate without contamination.
摘要翻译：提供一种制造半导体薄膜的方法，其中当形成在基板上的半导体薄膜被支撑在具有曲面的支撑构件的曲面上时，支撑构件旋转，从而将半导体薄膜剥离离开基质。还提供了一种制造半导体薄膜的方法，该半导体薄膜具有将形成在基板上的半导体薄膜剥离离开基板的步骤，其中在将基板固定在基板支撑部件上而不用粘合剂之后进行剥离步骤。这些提供了将半导体薄膜远离基板剥离而不损坏的方法以及不污染保持基板的方法。

2. 发明授权

US06802926B2 Method of producing semiconductor thin film and method of producing solar cell using same 失效
标题翻译：制造半导体薄膜的方法和使用其制造太阳能电池的方法
公开(公告)号：US06802926B2
公开(公告)日：2004-10-12
申请号：US09813137
申请日：2001-03-21
申请人： Masaki Mizutani , Isao Tanikawa , Katsumi Nakagawa , Tatsumi Shoji , Noritaka Ukiyo , Yukiko Iwasaki
发明人： Masaki Mizutani , Isao Tanikawa , Katsumi Nakagawa , Tatsumi Shoji , Noritaka Ukiyo , Yukiko Iwasaki
IPC分类号： B32B3100
CPC分类号： H01L21/76251 , C23C16/01 , C30B29/60 , C30B33/00 , H01L31/1892 , Y02E10/50 , Y10S156/93 , Y10S156/942 , Y10T156/1179 , Y10T156/1978
摘要： A method of producing a semiconductor thin film is provided. While a semiconductor thin film formed on a substrate is supported on a curved surface of a support member having the curved surface, the support member is rotated, thereby peeling the semiconductor thin film away from the substrate. Also provided is a method of producing a semiconductor thin film having the step of peeling a semiconductor thin film formed on a substrate away from the substrate, wherein the peeling step is carried out after the substrate is secured on a substrate support member without an adhesive. According to these methods, it is possible to peel the semiconductor thin film away from the substrate without damage and to hold the substrate without contamination.
摘要翻译：提供一种制造半导体薄膜的方法。虽然形成在基板上的半导体薄膜被支撑在具有曲面的支撑构件的曲面上，但是支撑构件被旋转，从而使半导体薄膜远离基板。还提供了一种制造半导体薄膜的方法，该半导体薄膜具有将形成在基板上的半导体薄膜剥离离开基板的步骤，其中在将基板固定在基板支撑部件上而不用粘合剂之后进行剥离步骤。根据这些方法，可以将半导体薄膜从衬底上剥离而不会损坏并且保持衬底而没有污染。

3. 发明授权

US07175706B2 Process of producing multicrystalline silicon substrate and solar cell 有权
标题翻译：生产多晶硅衬底和太阳能电池的工艺
公开(公告)号：US07175706B2
公开(公告)日：2007-02-13
申请号：US10505979
申请日：2003-02-21
申请人： Masaki Mizutani , Shunichi Ishihara , Katsumi Nakagawa , Hiroshi Sato , Takehito Yoshino , Shoji Nishida , Noritaka Ukiyo , Masaaki Iwane , Yukiko Iwasaki
发明人： Masaki Mizutani , Shunichi Ishihara , Katsumi Nakagawa , Hiroshi Sato , Takehito Yoshino , Shoji Nishida , Noritaka Ukiyo , Masaaki Iwane , Yukiko Iwasaki
IPC分类号： C30B11/14
CPC分类号： C30B11/00 , C30B29/06 , C30B33/00 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： There is provided a process of producing a multicrystalline silicon substrate having excellent characteristics as a solar cell substrate. A multicrystalline silicon ingot made by directional solidification 10 is cut such that a normal line of a principal surface 14 of a multicrystalline silicon substrate 13 is substantially perpendicular to a longitudinal direction of crystal grains 11 of the multicrystalline silicon ingot made by directional solidification 10.
摘要翻译：提供了具有作为太阳能电池基板的优异特性的多晶硅基板的制造方法。切割通过定向凝固10制成的多晶硅锭，使得多晶硅基板13的主表面14的法线基本上垂直于通过定向凝固10制成的多晶硅锭的晶粒11的纵向方向。

4. 发明授权

US06231667B1 Liquid phase growth method and liquid phase growth apparatus 失效
标题翻译：液相生长方法和液相生长装置
公开(公告)号：US06231667B1
公开(公告)日：2001-05-15
申请号：US09200867
申请日：1998-11-27
申请人： Masaaki Iwane , Isao Tanikawa , Katsumi Nakagawa , Tatsumi Shoji , Shoji Nishida , Noritaka Ukiyo
发明人： Masaaki Iwane , Isao Tanikawa , Katsumi Nakagawa , Tatsumi Shoji , Shoji Nishida , Noritaka Ukiyo
IPC分类号： C30B1906
CPC分类号： C30B19/062 , C30B19/00 , C30B29/06
摘要： A liquid phase growth apparatus of a dipping system has a plurality of liquid phase growth chambers and liquid phase growth operations of semiconductors are carried out on a plurality of substrates in the growth chambers. Another liquid phase growth apparatus of the dipping system has a liquid phase growth chamber and an annealing chamber, and is constructed in such structure that liquid phase growth of a semiconductor on one substrate is carried out in the liquid phase growth chamber and that an annealing operation of another substrate different from the aforementioned substrate is carried out in the annealing chamber. Another liquid phase growth apparatus of the dipping system has a liquid phase growth chamber and an annealing chamber, and is constructed in such structure that a semiconductor material is dissolved into a solvent in the liquid phase growth chamber and that the annealing operation of a substrate is carried out in the annealing chamber. These provide the liquid phase growth apparatus for formation of semiconductor layer in the dipping system, suitably applicable to mass production of large-area devices such as solar cells. In addition, the liquid phase growth method is also provided.
摘要翻译：浸渍系统的液相生长装置具有多个液相生长室，并且在生长室中的多个基板上进行半导体的液相生长操作。浸渍系统的另一种液相生长装置具有液相生长室和退火室，并且构造成使得在液相生长室中进行一个基板上的半导体的液相生长，并且退火操作在退火室中进行与上述基板不同的另一基板。浸渍系统的另一种液相生长装置具有液相生长室和退火室，并且被构造成使半导体材料溶解在液相生长室中的溶剂中，并且基板的退火操作为在退火室中进行。这些提供了用于在浸渍系统中形成半导体层的液相生长装置，适用于批量生产诸如太阳能电池的大面积装置。此外，还提供了液相生长方法。

5. 发明申请

US20050124139A1 Process of producing multicrystalline silicon substrate and solar cell 有权
标题翻译：生产多晶硅衬底和太阳能电池的工艺
公开(公告)号：US20050124139A1
公开(公告)日：2005-06-09
申请号：US10505979
申请日：2003-02-21
申请人： Masaki Mizutani , Shunichi Ishihara , Katsumi Nakagawa , Hiroshi Sato , Takehito Yoshino , Shoji Nishida , Noritaka Ukiyo , Masaaki Iwane , Yukiko Iwasaki
发明人： Masaki Mizutani , Shunichi Ishihara , Katsumi Nakagawa , Hiroshi Sato , Takehito Yoshino , Shoji Nishida , Noritaka Ukiyo , Masaaki Iwane , Yukiko Iwasaki
IPC分类号： C01B33/02 , C30B11/00 , C30B29/06 , C30B33/00 , H01L21/208 , H01L31/18 , H01L21/301 , H01L21/46 , H01L21/78
CPC分类号： C30B11/00 , C30B29/06 , C30B33/00 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： There is provided a process of producing a multicrystalline silicon substrate having excellent characteristics as a solar cell substrate. A multicrystalline silicon ingot made by directional solidification 10 is cut such that a normal line of a principal surface 14 of a multicrystalline silicon substrate 13 is substantially perpendicular to a longitudinal direction of crystal grains 11 of the multicrystalline silicon ingot made by directional solidification 10.
摘要翻译：提供了具有作为太阳能电池基板的优异特性的多晶硅基板的制造方法。切割通过定向凝固10制成的多晶硅锭，使得多晶硅基板13的主表面14的法线基本上垂直于通过定向凝固10制成的多晶硅锭的晶粒11的纵向方向。

6. 发明申请

US20060194417A1 Polycrystalline sillicon substrate 审中-公开
标题翻译：多晶硅衬底
公开(公告)号：US20060194417A1
公开(公告)日：2006-08-31
申请号：US10530189
申请日：2003-10-10
申请人： Shunichi Ishihara , Katsumi Nakagawa , Hiroshi Sato , Takehito Yoshino , Shoji Nishida , Noritaka Ukiyo , Masaaki Iwane , Yukiko Iwasaki , Masaki Mizutani
发明人： Shunichi Ishihara , Katsumi Nakagawa , Hiroshi Sato , Takehito Yoshino , Shoji Nishida , Noritaka Ukiyo , Masaaki Iwane , Yukiko Iwasaki , Masaki Mizutani
IPC分类号： H01L31/0376 , H01L21/20
CPC分类号： C30B29/06 , C30B11/00 , H01L31/182 , Y02E10/546 , Y02P70/521
摘要： A polycrystalline silicon substrate for a solar cell formed by growing a high purity polycrystalline silicon layer on a surface of a base obtained by slicing a polycrystalline silicon ingot obtained by melting metallurgical grade silicon and performing one-direction solidification, wherein one-direction solidification is performed on a melt prepared by adding B to molten metallurgical grade silicon at an amount of 2×1018 cm−3 to 5×1019 cm−3 based on the concentration in the melt to produce the polycrystalline silicon ingot. With this structure, it is possible to easily obtain a polycrystalline silicon substrate having resistivity and the type of conductivity suitable for manufacture of a solar cell.
摘要翻译：一种用于太阳能电池的多晶硅衬底，其通过在通过熔化冶金级硅获得的多晶硅锭切片并进行单向凝固而获得的基底表面上生长高纯度多晶硅层而形成，其中执行单向凝固在通过以2×10 18 cm -3至5×10 19 cm -3的量向熔融冶金级硅中加入B制备的熔体上， 3，根据熔体中的浓度制造多晶硅锭。利用这种结构，可以容易地获得具有电阻率的多晶硅基板和适合制造太阳能电池的导电类型。

7. 发明授权

US06682990B1 Separation method of semiconductor layer and production method of solar cell 失效
标题翻译：半导体层的分离方法和太阳能电池的制造方法
公开(公告)号：US06682990B1
公开(公告)日：2004-01-27
申请号：US09656014
申请日：2000-09-07
申请人： Masaaki Iwane , Katsumi Nakagawa , Makoto Iwakami , Shoji Nishida , Noritaka Ukiyo , Yukiko Iwasaki , Masaki Mizutani
发明人： Masaaki Iwane , Katsumi Nakagawa , Makoto Iwakami , Shoji Nishida , Noritaka Ukiyo , Yukiko Iwasaki , Masaki Mizutani
IPC分类号： H01L2130
CPC分类号： H01L31/1804 , H01L21/67207 , H01L21/6835 , H01L21/76259 , H01L31/0504 , H01L31/1892 , H01L2221/68368 , Y02E10/547 , Y02P70/521 , Y10S438/96 , Y10S438/977
摘要： The separation method of a semiconductor layer according to the present invention comprises separating a semiconductor layer and a semiconductor substrate at a separation layer formed therebetween, wherein a face of the semiconductor layer at the side opposite to the separation layer and/or a face of the semiconductor substrate at the side opposite to the separation layer are held by utilizing an ice layer, whereby it is unnecessary to use an adhesive as holding means and at the same time it is possible to easily and uniformly separate them.
摘要翻译：根据本发明的半导体层的分离方法包括在形成在其间的分离层处分离半导体层和半导体衬底，其中半导体层在与分离层相对的一侧的表面和/或通过利用冰层保持在与分离层相对的一侧的半导体衬底，由此不需要使用粘合剂作为保持装置，并且同时可以容易且均匀地分离它们。

8. 发明授权

US06802900B2 Liquid phase growth methods and liquid phase growth apparatus 失效
标题翻译：液相生长方法和液相生长装置
公开(公告)号：US06802900B2
公开(公告)日：2004-10-12
申请号：US10022545
申请日：2001-12-20
申请人： Masaaki Iwane , Katsumi Nakagawa , Tetsuro Saito , Tatsumi Shoji , Takehito Yoshino , Shoji Nishida , Noritaka Ukiyo , Masaki Mizutani
发明人： Masaaki Iwane , Katsumi Nakagawa , Tetsuro Saito , Tatsumi Shoji , Takehito Yoshino , Shoji Nishida , Noritaka Ukiyo , Masaki Mizutani
IPC分类号： C30B1900
CPC分类号： C30B19/02 , C30B19/04 , C30B19/06 , C30B19/08
摘要： Provided are a liquid phase growth method including a step of immersing a substrate in a crucible storing a solvent having a growth material dissolved therein; and a step of cooling the solvent from an interior thereof, and a liquid phase growth apparatus for use in the method, by which a temperature difference of a solution is decreased and by which a deposited film is formed in a uniform thickness.
摘要翻译：提供一种液相生长方法，包括将基板浸渍在储存溶解有生长材料的溶剂的坩埚中的步骤; 以及从其内部冷却溶剂的步骤，以及用于该方法的液相生长装置，通过该液相生长装置降低溶液的温度差并形成均匀的厚度的沉积膜。

9. 发明授权

US07022181B2 Liquid phase growth process, liquid phase growth system and substrate member production method 失效
公开(公告)号：US07022181B2
公开(公告)日：2006-04-04
申请号：US10014418
申请日：2001-12-14
申请人： Katsumi Nakagawa , Tetsuro Saito , Tatsumi Shoji , Takehito Yoshino , Shoji Nishida , Noritaka Ukiyo , Masaaki Iwane , Masaki Mizutani
发明人： Katsumi Nakagawa , Tetsuro Saito , Tatsumi Shoji , Takehito Yoshino , Shoji Nishida , Noritaka Ukiyo , Masaaki Iwane , Masaki Mizutani
IPC分类号： C30B19/00
CPC分类号： C30B19/062 , C30B19/00 , C30B29/06 , Y10S117/911
摘要： In a liquid phase growth process comprising immersing a substrate in a melt held in a crucible, a crystal material having been dissolved in the melt, and growing a crystal on the substrate, at least a group of substrates to be immersed in the melt held in the crucible are fitted to the supporting rack at a position set aside from the center of rotation of the crucible or supporting rack, and the crystal is grown on the surface of the substrate thus disposed. This can provide a liquid phase growth process which can attain a high growth rate, can enjoy uniform distribution of growth rate in each substrate and between the substrates even when substrates are set in a large number in one batch, and can readily keep the melt from reaction and contamination even when the system has a large size, and provide a liquid phase growth system suited for carrying out the process.

10. 发明授权

US06452091B1 Method of producing thin-film single-crystal device, solar cell module and method of producing the same 失效
标题翻译：薄膜单晶器件的制造方法，太阳能电池模块及其制造方法
公开(公告)号：US06452091B1
公开(公告)日：2002-09-17
申请号：US09614548
申请日：2000-07-12
申请人： Katsumi Nakagawa , Takao Yonehara , Yasuyoshi Takai , Kiyofumi Sakaguchi , Noritaka Ukiyo , Masaaki Iwane , Yukiko Iwasaki
发明人： Katsumi Nakagawa , Takao Yonehara , Yasuyoshi Takai , Kiyofumi Sakaguchi , Noritaka Ukiyo , Masaaki Iwane , Yukiko Iwasaki
IPC分类号： H01L2102
CPC分类号： H01L21/76259 , H01L21/304 , Y10T156/1002 , Y10T156/1028 , Y10T156/1041 , Y10T156/1048 , Y10T156/1049
摘要： The peeling of a thin-film single-crystal from a substrate is carried out so that the directions of straight lines on the single-crystal surface made by planes on which the single-crystal is apt to cleave are different from the front line direction of the peeled single-crystal. This single-crystal is used in a solar cell and a drive circuit member of an image display element. A method is provided which prevents a decrease in quality and yield of a single crystal layer when it is peeled from a substrate. A flexible solar cell module having a thin film single-crystal layer is made so that its flexing direction is different from the single-crystal's cleaving direction. Thus, a thin-film single-crystal solar cell module having excellent durability and reliability due to a lack of defect or cracking during production and use, and a method for producing the same, is provided.
摘要翻译：进行从基板剥离薄膜单晶，使得由单晶易于劈开的平面制成的单晶面上的直线的方向不同于剥离的单晶。该单晶体用于太阳能电池和图像显示元件的驱动电路部件。提供了当从基板剥离时防止单晶层的质量和产量降低的方法。制成具有薄膜单晶层的柔性太阳能电池模块，使其挠曲方向与单晶的分裂方向不同。因此，提供了由于在生产和使用期间缺少缺陷或破裂而具有优异的耐久性和可靠性的薄膜单晶太阳能电池组件及其制造方法。

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