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    • 6. 发明授权
    • Method and apparatus for producing semiconductor or metal particles
    • 用于制造半导体或金属颗粒的方法和装置
    • US07189278B2
    • 2007-03-13
    • US10418317
    • 2003-04-18
    • Kenji KatoYukio YamaguchiSeiichi IsomaeMasaki Miyazaki
    • Kenji KatoYukio YamaguchiSeiichi IsomaeMasaki Miyazaki
    • B22F9/06
    • B22F9/08B01J2/04B22F2009/0816B22F2009/0888B22F2009/0892
    • A method for producing semiconductor or metal particles comprises the steps of: storing a semiconductor or metal melt in a crucible having a nozzle; supplying a gas comprising at least one selected from the group consisting of He, Ne, Ar, Kr and Xe into the crucible such that the pressure of the supplied gas in a space over the melt in the crucible is higher than the pressure of a gaseous phase into which the melt is dropped; dropping the melt from the nozzle into the gaseous phase by the pressure of the gas to form liquid particles; and solidifying the liquid particles in the gaseous phase to obtain semiconductor or metal particles. The crucible comprises at least one selected from the group consisting of hexagonal BN, cubic BN, Si3N4, TiB2, ZrB2, zirconia and stabilized zirconia at least near the nozzle. Alternatively, the crucible comprises quartz glass at least near the nozzle and has a heat-resistant support member for suppressing deformation caused by a decrease in viscosity of the quartz glass at high temperatures.
    • 一种制造半导体或金属颗粒的方法包括以下步骤:将半导体或金属熔体储存在具有喷嘴的坩埚中; 将包含选自He,Ne,Ar,Kr和Xe中的至少一种的气体供应到坩埚中,使得在坩埚中的熔体上方的供应气体的压力高于气体的压力 熔体滴入其中的相; 通过气体的压力将熔体从喷嘴滴入气相中以形成液体颗粒; 并使气相中的液体颗粒固化,得到半导体或金属颗粒。 所述坩埚包括选自六方晶系BN,立方BN,Si 3 N 4 N,TiB 2 N,ZrB,SUB的至少一种 至少在喷嘴附近,氧化锆和稳定的氧化锆。 或者,坩埚包括至少在喷嘴附近的石英玻璃,并且具有用于抑制在高温下石英玻璃的粘度降低引起的变形的耐热支撑构件。