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1. 发明授权

US08106412B2 Semiconductor light emitting device and fabrication method for the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08106412B2
公开(公告)日：2012-01-31
申请号：US12596004
申请日：2008-04-11
申请人： Masakazu Takao , Mitsuhiko Sakai , Kazuhiko Senda
发明人： Masakazu Takao , Mitsuhiko Sakai , Kazuhiko Senda
IPC分类号： H01L33/00
CPC分类号： H01L33/46 , H01L33/0025 , H01L33/04 , H01L33/06 , H01L33/10 , H01L33/145 , H01L33/22 , H01L33/30 , H01L33/38 , H01L33/40 , H01L33/405 , H01L33/42 , H01L33/486 , H01L33/60 , H01L33/62
摘要： The high luminance semiconductor light emitting device comprises: a GaAs substrate structure including a GaAs layer (3), a first metal buffer layer (2) disposed on a surface of the GaAs layer, a first metal layer (1) disposed on the first metal buffer layer, and a second metal buffer layer (4) and a second metal layer (5) disposed at a back side of the GaAs layer; and a light emitting diode structure disposed on the GaAs substrate structure and including a third metal layer (12), a metal contact layer (11) disposed on the third metal layer, a p type cladding layer (10) disposed on the metal contact layer, a multi-quantum well layer (9) disposed on the p type cladding layer, an n type cladding layer (8) disposed on the multi-quantum well layer, and a window layer 7 disposed on the n type cladding layer, wherein the GaAs substrate structure and the light emitting diode structure are bonded by using the first metal layer (1) and the third metal layer (12).
摘要翻译：高亮度半导体发光器件包括：GaAs衬底结构，包括GaAs层（3），设置在GaAs层表面上的第一金属缓冲层（2），设置在第一金属层缓冲层，和设置在GaAs层背面的第二金属缓冲层（4）和第二金属层（5）; 以及设置在所述GaAs衬底结构上并包括第三金属层（12），设置在所述第三金属层上的金属接触层（11），设置在所述金属接触层上的ap型包层（10）的发光二极管结构，设置在p型包覆层上的多量子阱层（9），配置在多量子阱层上的n型覆盖层（8）以及配置在n型覆盖层上的窗口层7，其中，基板结构和发光二极管结构通过使用第一金属层（1）和第三金属层（12）结合。

2. 发明申请

US20100133507A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD FOR THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20100133507A1
公开(公告)日：2010-06-03
申请号：US12596004
申请日：2008-04-11
申请人： Masakazu Takao , Mitsuhiko Sakai , Kazuhiko Senda
发明人： Masakazu Takao , Mitsuhiko Sakai , Kazuhiko Senda
IPC分类号： H01L33/00
CPC分类号： H01L33/46 , H01L33/0025 , H01L33/04 , H01L33/06 , H01L33/10 , H01L33/145 , H01L33/22 , H01L33/30 , H01L33/38 , H01L33/40 , H01L33/405 , H01L33/42 , H01L33/486 , H01L33/60 , H01L33/62
摘要： A high luminance semiconductor light emitting device and a fabrication method for the same are provided by forming a metallic reflecting layer using a non-transparent semiconductor substrate.The high luminance semiconductor light emitting device comprises: a GaAs substrate structure including a GaAs layer (3), a first metal buffer layer (2) disposed on a surface of the GaAs layer, a first metal layer (1) disposed on the first metal buffer layer, and a second metal buffer layer (4) and a second metal layer (5) disposed at a back side of the GaAs layer; and a light emitting diode structure disposed on the GaAs substrate structure and including a third metal layer (12), a metal contact layer (11) disposed on the third metal layer, a p type cladding layer (10) disposed on the metal contact layer, a multi-quantum well layer (9) disposed on the p type cladding layer, an n type cladding layer (8) disposed on the multi-quantum well layer, and a window layer 7 disposed on the n type cladding layer, wherein the GaAs substrate structure and the light emitting diode structure are bonded by using the first metal layer (1) and the third metal layer (12).
摘要翻译：通过使用非透明半导体衬底形成金属反射层，提供高亮度半导体发光器件及其制造方法。高亮度半导体发光器件包括：GaAs衬底结构，包括GaAs层（3），设置在GaAs层表面上的第一金属缓冲层（2），设置在第一金属层缓冲层，和设置在GaAs层背面的第二金属缓冲层（4）和第二金属层（5）; 以及设置在所述GaAs衬底结构上并包括第三金属层（12），设置在所述第三金属层上的金属接触层（11），设置在所述金属接触层上的ap型包层（10）的发光二极管结构，设置在p型包覆层上的多量子阱层（9），配置在多量子阱层上的n型覆盖层（8）以及配置在n型覆层上的窗口层7，其中，基板结构和发光二极管结构通过使用第一金属层（1）和第三金属层（12）结合。

3. 发明授权

US08536598B2 Semiconductor light emitting device and fabrication method for the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08536598B2
公开(公告)日：2013-09-17
申请号：US13327860
申请日：2011-12-16
申请人： Masakazu Takao , Mitsuhiko Sakai , Kazuhiko Senda
发明人： Masakazu Takao , Mitsuhiko Sakai , Kazuhiko Senda
IPC分类号： H01L33/00
CPC分类号： H01L33/46 , H01L33/0025 , H01L33/04 , H01L33/06 , H01L33/10 , H01L33/145 , H01L33/22 , H01L33/30 , H01L33/38 , H01L33/40 , H01L33/405 , H01L33/42 , H01L33/486 , H01L33/60 , H01L33/62
摘要： A high luminance semiconductor light emitting device and fabrication method thereof, wherein a metallic reflecting layer is formed using a non-transparent semiconductor substrate. The device includes a light emitting diode structure on a GaAs substrate structure bonded together using a first and a third metal layers. The substrate includes a GaAs layer, a first metal buffer layer on a surface of the GaAs layer, the first metal layer on the first metal buffer layer, and a second metal buffer layer and a second metal layer at a back side of the GaAs layer. The diode structure includes the third metal layer, a metal contact layer on the third metal layer, a p-type cladding layer on the metal contact layer, a multi-quantum well layer on the p-type cladding layer, an n-type cladding layer on the multi-quantum well layer, and a window layer on the n-type cladding layer.
摘要翻译：一种高亮度半导体发光器件及其制造方法，其中使用非透明半导体衬底形成金属反射层。该器件包括在GaAs衬底结构上使用第一和第三金属层结合在一起的发光二极管结构。衬底包括GaAs层，在GaAs层的表面上的第一金属缓冲层，第一金属缓冲层上的第一金属层和在GaAs层的背面的第二金属缓冲层和第二金属层。二极管结构包括第三金属层，第三金属层上的金属接触层，金属接触层上的p型包覆层，p型覆层上的多量子阱层，n型包层在多量子阱层上的层，以及n型包覆层上的窗口层。

4. 发明申请

US20120132889A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD FOR THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120132889A1
公开(公告)日：2012-05-31
申请号：US13327860
申请日：2011-12-16
申请人： Masakazu TAKAO , Mitsuhiko Sakai , Kazuhiko Senda
发明人： Masakazu TAKAO , Mitsuhiko Sakai , Kazuhiko Senda
IPC分类号： H01L33/06 , H01L33/30
CPC分类号： H01L33/46 , H01L33/0025 , H01L33/04 , H01L33/06 , H01L33/10 , H01L33/145 , H01L33/22 , H01L33/30 , H01L33/38 , H01L33/40 , H01L33/405 , H01L33/42 , H01L33/486 , H01L33/60 , H01L33/62
摘要： A high luminance semiconductor light emitting device and fabrication method thereof, wherein a metallic reflecting layer is formed using a non-transparent semiconductor substrate. The device includes a light emitting diode structure on a GaAs substrate structure bonded together using a first and a third metal layers. The substrate includes a GaAs layer, a first metal buffer layer on a surface of the GaAs layer, the first metal layer on the first metal buffer layer, and a second metal buffer layer and a second metal layer at a back side of the GaAs layer. The diode structure includes the third metal layer, a metal contact layer on the third metal layer, a p-type cladding layer on the metal contact layer, a multi-quantum well layer on the p-type cladding layer, an n-type cladding layer on the multi-quantum well layer, and a window layer on the n-type cladding layer.
摘要翻译：一种高亮度半导体发光器件及其制造方法，其中使用非透明半导体衬底形成金属反射层。该器件包括在GaAs衬底结构上使用第一和第三金属层结合在一起的发光二极管结构。衬底包括GaAs层，在GaAs层的表面上的第一金属缓冲层，第一金属缓冲层上的第一金属层和在GaAs层的背面的第二金属缓冲层和第二金属层。二极管结构包括第三金属层，第三金属层上的金属接触层，金属接触层上的p型包覆层，p型覆层上的多量子阱层，n型包层在多量子阱层上的层，以及n型包覆层上的窗口层。

5. 发明授权

US08803181B2 Semiconductor light emitting device and fabrication method of the semiconductor light emitting device 有权
标题翻译：半导体发光器件及半导体发光器件的制造方法
公开(公告)号：US08803181B2
公开(公告)日：2014-08-12
申请号：US12285702
申请日：2008-10-10
申请人： Masakazu Takao , Kazuhiko Senda
发明人： Masakazu Takao , Kazuhiko Senda
IPC分类号： H01L33/38
CPC分类号： H01L33/387 , H01L33/0079 , H01L33/30 , H01L33/40 , H01L33/46 , H01L33/62
摘要： A semiconductor light emitting device which can control of current density and can optimize current density and in which a rise in luminosity is possible, and a fabrication method of the semiconductor light emitting device are provided. The semiconductor light emitting device including: a semiconductor substrate structure including a semiconductor substrate, a first metal layer placed on a first surface of the semiconductor substrate, and a second metal layer placed on a second surface of the semiconductor substrate; and a light emitting diode structure including a third metal layer placed on the semiconductor substrate structure, a current control layer placed on the third metal layer and composed of a transparent insulating film and a current control electrode, an epitaxial growth layer placed on the current control layer, and a surface electrode placed on the epitaxial growth layer, wherein the semiconductor substrate structure and the light emitting diode structure are bonded by using the first metal layer and the third metal layer.
摘要翻译：可以提供能够控制电流密度并且可以优化电流密度并且其中可以提高发光度的半导体发光器件，以及半导体发光器件的制造方法。所述半导体发光器件包括：半导体衬底结构，包括半导体衬底，设置在所述半导体衬底的第一表面上的第一金属层和放置在所述半导体衬底的第二表面上的第二金属层; 以及包括设置在半导体衬底结构上的第三金属层的发光二极管结构，设置在第三金属层上并由透明绝缘膜和电流控制电极组成的电流控制层，设置在电流控制上的外延生长层层和设置在外延生长层上的表面电极，其中通过使用第一金属层和第三金属层来接合半导体衬底结构和发光二极管结构。

6. 发明申请

US20090101933A1 Semiconductor light emitting device and fabrication method of the semiconductor light emitting device 有权
标题翻译：半导体发光器件及半导体发光器件的制造方法
公开(公告)号：US20090101933A1
公开(公告)日：2009-04-23
申请号：US12285702
申请日：2008-10-10
申请人： Masakazu Takao , Kazuhiko Senda
发明人： Masakazu Takao , Kazuhiko Senda
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/387 , H01L33/0079 , H01L33/30 , H01L33/40 , H01L33/46 , H01L33/62
摘要： A semiconductor light emitting device which can control of current density and can optimize current density and in which a rise in luminosity is possible, and a fabrication method of the semiconductor light emitting device are provided. The semiconductor light emitting device including: a semiconductor substrate structure including a semiconductor substrate, a first metal layer placed on a first surface of the semiconductor substrate, and a second metal layer placed on a second surface of the semiconductor substrate; and a light emitting diode structure including a third metal layer placed on the semiconductor substrate structure, a current control layer placed on the third metal layer and composed of a transparent insulating film and a current control electrode, an epitaxial growth layer placed on the current control layer, and a surface electrode placed on the epitaxial growth layer, wherein the semiconductor substrate structure and the light emitting diode structure are bonded by using the first metal layer and the third metal layer.
摘要翻译：可以提供能够控制电流密度并且可以优化电流密度并且其中可以提高发光度的半导体发光器件，以及半导体发光器件的制造方法。所述半导体发光器件包括：半导体衬底结构，包括半导体衬底，设置在所述半导体衬底的第一表面上的第一金属层和放置在所述半导体衬底的第二表面上的第二金属层; 以及包括设置在半导体衬底结构上的第三金属层的发光二极管结构，设置在第三金属层上并由透明绝缘膜和电流控制电极组成的电流控制层，设置在电流控制上的外延生长层层和设置在外延生长层上的表面电极，其中通过使用第一金属层和第三金属层来接合半导体衬底结构和发光二极管结构。

7. 发明申请

US20080210958A1 Semiconductor white light emitting device and method for manufacturing the same 审中-公开
标题翻译：半导体白光发光器件及其制造方法
公开(公告)号：US20080210958A1
公开(公告)日：2008-09-04
申请号：US11987020
申请日：2007-11-26
申请人： Kazuhiko Senda , Shunji Nakata
发明人： Kazuhiko Senda , Shunji Nakata
IPC分类号： H01L33/00
CPC分类号： H01L33/08 , H01L33/50 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2924/00014
摘要： A semiconductor white light emitting device including: a semiconductor light emitting element having green and blue light emitting layers containing In; and a phosphor capable of emitting red light.
摘要翻译：一种半导体白色发光器件，包括：具有包含In的绿色和蓝色发光层的半导体发光元件; 以及能够发出红光的荧光体。

8. 发明申请

US20100133506A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR 审中-公开
标题翻译：氮化物半导体发光元件和制造氮化物半导体的方法
公开(公告)号：US20100133506A1
公开(公告)日：2010-06-03
申请号：US12452060
申请日：2008-06-13
申请人： Yasuo Nakanishi , Shunji Nakata , Tetsuya Fujiwara , Kazuhiko Senda , Masayuki Sonobe
发明人： Yasuo Nakanishi , Shunji Nakata , Tetsuya Fujiwara , Kazuhiko Senda , Masayuki Sonobe
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01L33/12 , H01L33/14 , H01L33/325
摘要： Provided are a nitride semiconductor light emitting element having a nitride semiconductor layered on an AlN buffer layer with improved qualities such as crystal quality and with improved light emission output, and a method of manufacturing a nitride semiconductor. An AlN buffer layer (2) is formed on a sapphire substrate (1), and nitride semiconductors of an n-type AlGaN layer (3), an InGaN/GaN active layer (4) and a p-type GaN layer (5) are layered in sequence on the buffer layer (2). An n-electrode (7) is formed on a surface of the n-type AlGaN layer (3), and a p-electrode (6) is formed on the p-type GaN layer (5). The n-type AlGaN layer (3) serves as a cladding layer for confining light and carriers. The AlN buffer layer (2) is manufactured by alternately supplying an Al material and an N material at a growing temperature of 900° C. or higher.
摘要翻译：提供一种氮化物半导体发光元件，其具有层叠在AlN缓冲层上的氮化物半导体，其具有改善的质量，例如晶体质量和改善的发光输出，以及制造氮化物半导体的方法。在蓝宝石衬底（1）上形成AlN缓冲层（2），并且n型AlGaN层（3），InGaN / GaN有源层（4）和p型GaN层（5）的氮化物半导体在缓冲层（2）上依次分层。在n型AlGaN层（3）的表面上形成n电极（7），在p型GaN层（5）上形成p电极（6）。 n型AlGaN层（3）用作限制光和载流子的包覆层。 AlN缓冲层（2）通过在900℃以上的生长温度下交替地供给Al材料和N材料来制造。

9. 发明申请

US20080149950A1 Optical communication semiconductor device and method for manufacturing the same 审中-公开
标题翻译：光通信半导体器件及其制造方法
公开(公告)号：US20080149950A1
公开(公告)日：2008-06-26
申请号：US11987021
申请日：2007-11-26
申请人： Kazuhiko Senda , Shunji Nakata
发明人： Kazuhiko Senda , Shunji Nakata
IPC分类号： H01L33/00
CPC分类号： H01L33/08 , H01L33/10
摘要： An optical communication semiconductor device including: a first light emitting layer composed of a semiconductor; and a second light emitting layer which is laid on or above the first light emitting layer and composed of a semiconductor capable of emitting light having a emission peak at a wavelength different from that of light emitted by the first light emitting layer.
摘要翻译：一种光通信半导体器件，包括：由半导体构成的第一发光层; 以及第二发光层，其被布置在第一发光层上或上方并且由能够发射具有与由第一发光层发射的光的波长不同的发射峰的光的半导体构成。

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