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1. 发明授权

US5380476A Method of debinding for injection molded objects 失效
标题翻译：注射成型物品脱脂方法
公开(公告)号：US5380476A
公开(公告)日：1995-01-10
申请号：US760805
申请日：1991-09-16
申请人： Masakazu Matsushita , Yoshisato Kiyota , Hiroshi Ohtsubo , Junichi Ohta
发明人： Masakazu Matsushita , Yoshisato Kiyota , Hiroshi Ohtsubo , Junichi Ohta
IPC分类号： C04B35/638 , B22F3/10 , B22F3/22 , C04B35/64
CPC分类号： B22F3/225 , B22F3/1021 , B22F3/22 , B22F2998/00
摘要： A debinding method for use in a process for producing a sintered object, by effecting a debinding pre-treatment by heating the injection-molded object in an atmosphere of reduced pressure at a temperature at which the vapor pressure of the component of the organic binder having the highest vapor pressure does not exceed the pressure of the atmosphere, thereby removing the organic binder in the amount of at least about 18 wt %; and effecting a further debinding heat treatment in which the injection-molded object is heated to and maintained at a temperature higher than the temperature in the debinding pre-treatment.
摘要翻译：一种剥离方法，用于制造烧结体的方法，通过在有机粘合剂的成分的蒸气压具有下述温度的条件下，在减压气氛下加热注射成形体，进行脱脂预处理：最高的蒸汽压力不超过大气压力，从而除去至少约18重量％的有机粘合剂; 并且进行进一步的脱模热处理，其中将注射成型物体加热并保持在高于脱模预处理温度的温度。

2. 发明授权

US5108492A Corrosion-resistant sintered alloy steels and method for making same 失效
标题翻译：耐腐蚀烧结合金钢及其制造方法
公开(公告)号：US5108492A
公开(公告)日：1992-04-28
申请号：US465192
申请日：1990-02-22
申请人： Yoshisato Kiyota , Hiroshi Ohtsubo , Junichi Ohta , Masakazu Matsushita , Ichio Sakurada
发明人： Yoshisato Kiyota , Hiroshi Ohtsubo , Junichi Ohta , Masakazu Matsushita , Ichio Sakurada
IPC分类号： B22F3/10 , C22C33/02 , C22C38/00 , C22C38/40
CPC分类号： C22C33/02 , B22F3/101 , C22C33/0285
摘要： It is provided a method for the manufacture of a corrosion-resistant sintered alloy steel, which comprises providing a stainless steel powder; adding a binder to said steel powder; molding the mixture; and carrying out the steps of (1) heating the resultant molding to remove the binder therefrom, (2) sintering the thus debound molding under reduced pressure up to 30 Torr, and (3) further sintering at a higher temperature than those of steps (1) and (2) in a non-oxidative atmosphere under substantially atmospheric pressure. It is also provided a corrosion-resistant sintered alloy steel which comprises a stainless steel, said alloy steel having a density ratio of not less than 92%, a maximum diametric of pore present in the structure of not larger than 20 .mu.m, and a content of Cr at the surface of the steel as being sintered which is not less than 80% of a content of Cr in the inside thereof.
摘要翻译： PCT No.PCT / JP89 / 00633 Sec。 371日期1990年2月22日 102（e）日期1990年2月22日PCT提交1989年6月27日PCT公布。公开号WO90 / 00207 日本1990年1月11日提供了一种制造耐腐蚀烧结合金钢的方法，其包括提供不锈钢粉末; 向所述钢粉末添加粘合剂; 成型混合物; （1）加热所得到的模制品以除去粘合剂，（2）在减压下将脱模成型体烧结至30托，和（3）在比步骤（TM）高的温度下进一步烧结（ 1）和（2）在非氧化性气氛中在大气压下进行。还提供了一种耐腐蚀的烧结合金钢，其包括不锈钢，所述合金钢的密度比不小于92％，结构中存在的孔的最大直径不大于20μm，在烧结的钢表面的Cr含量不低于其内部的Cr含量的80％。

3. 发明授权

US4964907A Sintered bodies and production process thereof 失效
标题翻译：烧结体及其制造方法
公开(公告)号：US4964907A
公开(公告)日：1990-10-23
申请号：US393765
申请日：1989-08-14
申请人： Yoshisato Kiyota , Junichi Ohta , Hiroshi Ohtsubo , Shigeaki Takajo
发明人： Yoshisato Kiyota , Junichi Ohta , Hiroshi Ohtsubo , Shigeaki Takajo
IPC分类号： B22F3/10 , B22F3/22 , H01F1/22
CPC分类号： B22F3/225 , B22F3/101 , B22F3/22 , H01F1/22 , A61F2002/30968 , B22F2998/00
摘要： A process is provided for the production of a sintered body. The process includes the following consecutive steps: (i) mixing and kneading one or more metal powders and/or one or more alloy powder with a binder into a compound, said metal and alloy powders having an average particle size not greater than 30 .mu.m, (ii) injection-molding the compound into a green body; (iii) debinding the green body to form a debound body; and (iv) subjecting the debound body to first-stage sintering at 1,050.degree.-1,250.degree. C. in a reducing or reduced-pressure atmosphere and then to second-stage sintering at a temperature in a range of 1,100.degree.-1,400.degree. C. which is higher than that of the first-stage sintering. This process can provide sintered Ti bodies and sintered magnetic bodies of the Fe-Si type, which have a density ratio of at least 95%.

4. 发明授权

US5067979A Sintered bodies and production process thereof 失效
标题翻译：烧结体及其制造方法
公开(公告)号：US5067979A
公开(公告)日：1991-11-26
申请号：US549491
申请日：1990-07-06
申请人： Yoshisato Kiyota , Junichi Ohta , Hiroshi Ohtsubo , Shigeaki Takajo
发明人： Yoshisato Kiyota , Junichi Ohta , Hiroshi Ohtsubo , Shigeaki Takajo
IPC分类号： B22F3/10 , B22F3/22 , H01F1/22
CPC分类号： B22F3/225 , B22F3/101 , B22F3/22 , H01F1/22 , A61F2002/30968 , B22F2998/00
摘要： A process is provided for the production of a sintered body. The process includes the following consecutive steps: i) mixing and kneading one or more metal powders and/or one or more alloy powder with a binder into a compound, said metal and alloy powders having an average particle size not greater than 30 .mu.m, ii) injection-molding the compound into a green body; iii) debinding the green body to form a debound body; and iv) subjecting the debound body to a first-stage sintering at 1,050.degree.-1,250.degree. C. in a reduced-pressure atmosphere and then to second-stage sintering at a temperature in a range of 1,100.degree.-400.degree. C. which is higher than that of the first-stage sintering. This process can provide sintered Ti bodies and sintered magnetic bodies of the Fe-Si type, which have a density ratio of at least 95%.
摘要翻译：提供了制造烧结体的方法。该方法包括以下连续步骤：i）将一种或多种金属粉末和/或一种或多种合金粉末与粘合剂混合并捏合到化合物中，所述金属和合金粉末的平均粒度不大于30μm， ii）将化合物注射成型为生坯; iii）剥去生坯以形成一个去皮体; 和iv）在减压气氛中使得脱氧体在1050℃-150℃下进行第一阶段烧结，然后在1100℃-400℃的温度下进行第二阶段烧结，高于一级烧结。该方法可以提供具有至少95％的密度比的Fe-Si型烧结Ti体和烧结磁体。

5. 发明授权

US5338508A Alloy steel powders for injection molding use, their compounds and a method for making sintered parts from the same 失效
标题翻译：用于注射成型的合金钢粉末，它们的化合物和从其制备烧结部件的方法
公开(公告)号：US5338508A
公开(公告)日：1994-08-16
申请号：US962607
申请日：1992-10-16
申请人： Minoru Nitta , Yoshisato Kiyota , Yukio Makiishi , Hiroshi Ohtsubo , Toshio Watanabe , Yasuhiro Habu
发明人： Minoru Nitta , Yoshisato Kiyota , Yukio Makiishi , Hiroshi Ohtsubo , Toshio Watanabe , Yasuhiro Habu
IPC分类号： B22F3/22 , C22C33/02 , C22C38/02 , C22C38/04 , C22C38/10
CPC分类号： B22F3/22 , B22F3/225 , C22C33/0285 , B22F2998/00
摘要： There is provided alloy steel powders for the injection molding use manufactured by the atomizing method which are characterized by their substantially spherical particle shape and average particle diameters of 20 microns or less, a compound for the injection molding use which contains the alloy steel powders and one or more organic binders, a process for manufacturing sintered materials in performing injection molding of compound and subsequently debinding the obtained injection molded part followed by sintering the debound part, at least the first stage of the sintering step is performed in reduced pressure atmosphere, and the sintered material having a relative density ratio of 92% or more.
摘要翻译：提供了通过雾化法制造的用于注射成型用途的合金钢粉末，其特征在于其基本上为球形颗粒形状和20微米或更小的平均粒径，用于注射成型用途的化合物，其含有合金钢粉末和一种或更多的有机粘合剂，在进行化合物的注射成型中制造烧结材料的方法，随后脱模所获得的注射成型部件，然后烧结所述脱模部分，至少所述烧结步骤的第一阶段在减压气氛中进行，相对密度比为92％以上的烧结体。

6. 发明授权

US08614505B2 Semiconductor device with heat spreader 有权
标题翻译：带散热器的半导体器件
公开(公告)号：US08614505B2
公开(公告)日：2013-12-24
申请号：US13596708
申请日：2012-08-28
申请人： Tomoyuki Fukuda , Yoshihiro Kubota , Hiroshi Ohtsubo , Yuichi Asano
发明人： Tomoyuki Fukuda , Yoshihiro Kubota , Hiroshi Ohtsubo , Yuichi Asano
IPC分类号： H01L23/34
CPC分类号： H01L23/4334 , H01L21/561 , H01L23/3128 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L24/97 , H01L2224/32225 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/49171 , H01L2224/73265 , H01L2224/83192 , H01L2224/92247 , H01L2224/97 , H01L2924/00014 , H01L2924/01006 , H01L2924/01029 , H01L2924/01074 , H01L2924/014 , H01L2924/07802 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2224/85 , H01L2924/00 , H01L2924/00012 , H01L2924/20752 , H01L2224/05599
摘要： A BGA type semiconductor device includes: a substrate having wirings and electrodes; a semiconductor element disposed on the substrate, having a rectangular plan shape, and a plurality of electrodes disposed along each side of the semiconductor element; a plurality of wires connecting the electrodes on the semiconductor element with the electrodes on the substrate; a heat dissipation member disposed on the substrate, covering the semiconductor element, and having openings formed in areas facing apex portions of the plurality of wires connected to the electrodes formed along each side of the semiconductor element; and a sealing resin member for covering and sealing the semiconductor element and heat dissipation member.
摘要翻译： BGA型半导体器件包括：具有布线和电极的衬底; 设置在所述基板上的具有矩形平面形状的半导体元件和沿着所述半导体元件的每一侧设置的多个电极; 将半导体元件上的电极与基板上的电极连接的多条导线; 散热构件，设置在所述基板上，覆盖所述半导体元件，并且具有形成在与所述半导体元件的每一侧形成的所述电极连接的所述多根导线的顶点部分的区域中形成的开口; 以及用于覆盖和密封半导体元件和散热构件的密封树脂构件。

7. 发明申请

US20120322209A1 SEMICONDUCTOR DEVICE WITH HEAT SPREADER 有权
标题翻译：带散热器的半导体器件
公开(公告)号：US20120322209A1
公开(公告)日：2012-12-20
申请号：US13596758
申请日：2012-08-28
申请人： Tomoyuki Fukuda , Yoshihiro Kubota , Hiroshi Ohtsubo , Yuichi Asano
发明人： Tomoyuki Fukuda , Yoshihiro Kubota , Hiroshi Ohtsubo , Yuichi Asano
IPC分类号： H01L21/56
CPC分类号： H01L23/4334 , H01L21/561 , H01L23/3128 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L24/97 , H01L2224/32225 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/49171 , H01L2224/73265 , H01L2224/83192 , H01L2224/92247 , H01L2224/97 , H01L2924/00014 , H01L2924/01006 , H01L2924/01029 , H01L2924/01074 , H01L2924/014 , H01L2924/07802 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2224/85 , H01L2924/00 , H01L2924/00012 , H01L2924/20752 , H01L2224/05599
摘要： A BGA type semiconductor device includes: a substrate having wirings and electrodes; a semiconductor element disposed on the substrate, having a rectangular plan shape, and a plurality of electrodes disposed along each side of the semiconductor element; a plurality of wires connecting the electrodes on the semiconductor element with the electrodes on the substrate; a heat dissipation member disposed on the substrate, covering the semiconductor element, and having openings formed in areas facing apex portions of the plurality of wires connected to the electrodes formed along each side of the semiconductor element; and a sealing resin member for covering and sealing the semiconductor element and heat dissipation member.
摘要翻译： BGA型半导体器件包括：具有布线和电极的衬底; 设置在所述基板上的具有矩形平面形状的半导体元件和沿着所述半导体元件的每一侧设置的多个电极; 将半导体元件上的电极与基板上的电极连接的多条导线; 散热构件，设置在所述基板上，覆盖所述半导体元件，并且具有形成在与所述半导体元件的每一侧形成的所述电极连接的所述多根导线的顶点部分的区域中形成的开口; 以及用于覆盖和密封半导体元件和散热构件的密封树脂构件。

8. 发明申请

US20100024222A1 BLADE MEMBER 有权
标题翻译：叶子会员
公开(公告)号：US20100024222A1
公开(公告)日：2010-02-04
申请号：US12449508
申请日：2008-03-27
申请人： Koichiro Akari , Hiroshi Ohtsubo
发明人： Koichiro Akari , Hiroshi Ohtsubo
IPC分类号： B26B21/60 , B26B9/00
CPC分类号： B26B21/60
摘要： In a cutting edge of a razor blade, a non-nitrided layer containing Ti, Al, and Cr is formed on opposite surfaces of a base plate as a portion of a coating layer. A remaining layer containing Ti, Al, Cr, and N is formed on opposite surfaces of the non-nitrided layer as a portion of a nitrided layer of the coating layer. A surface layer containing Ti, Al, Cr, and N is formed on opposite surfaces of the remaining layer as a portion of the nitrided layer of the coating layer. A fluororesin layer is formed on opposite surfaces of the surface layer with a bonding layer containing Cr and Al in between. The coating layer including the non-nitrided layer and the nitrided layer further improves the cutting edge, enhances cutting performance of the cutting edge, and maintains the enhanced cutting performance to improve the durability of the cutting edge.
摘要翻译：在剃刀刀片的切削刃中，含有Ti，Al和Cr的非氮化层形成在作为涂层的一部分的基板的相对表面上。作为涂层的氮化层的一部分，在非氮化层的相对表面上形成含有Ti，Al，Cr和N的剩余层。作为涂层的氮化层的一部分，在剩余层的相对面上形成含有Ti，Al，Cr和N的表面层。在表层的相对表面上形成有含有Cr和Al的结合层的氟树脂层。包括非氮化层和氮化层的涂层进一步改善了切割边缘，提高了切割刃的切割性能，并且保持了提高的切割性能以提高切割刃的耐久性。

9. 发明授权

US5613849A Dental care material and manufacturing method 失效
标题翻译：牙科护理材料及制造方法
公开(公告)号：US5613849A
公开(公告)日：1997-03-25
申请号：US378450
申请日：1995-01-25
申请人： Naoki Tanaka , Hiroshi Ohtsubo , Michio Ito
发明人： Naoki Tanaka , Hiroshi Ohtsubo , Michio Ito
IPC分类号： A61C7/14 , A61C7/00 , A61C7/28 , A61C8/00 , A61F2/00 , A61K6/04 , A61L27/06 , B22F3/22 , C22C1/04 , C22C5/02 , A61K6/00
CPC分类号： B22F3/225 , A61L27/06 , B22F3/22 , C22C1/0458 , A61C7/14 , A61F2310/00023 , B22F2998/00 , Y10S75/955
摘要： A dental care material comprising a titanium sintered body has no harmful effects on the human body and easily produces products with complicated shapes having a high level of strength. A mixture of titanium powder and an organic binder is injection molded and subjected to binder removal and sintering processes to form a bracket for orthodontic or dental implant materials. Pure titanium powder, with an average granule diameter of no more than 40 .mu.m, a carbon content by weight of no more than 0.3%, and an oxygen content by weight of no more than 0.6%, preferably is used to produce a titanium sintered body of combined carbon and oxygen content by weight of no more than 1.0%. Colored layers can be formed on the surface of the titanium sintered body using various methods as needed.
摘要翻译：包含钛烧结体的牙科保养材料对人体没有有害影响，容易产生具有高水平强度的复杂形状的产品。将钛粉末和有机粘合剂的混合物注射成型并进行粘合剂去除和烧结工艺以形成用于正牙或牙科植入材料的支架。纯钛粉末，平均颗粒直径不超过40μm，碳含量不超过0.3％，氧含量不超过0.6％，优选用于制备钛烧结组合碳和氧含量不超过1.0％。可以根据需要使用各种方法在钛烧结体的表面上形成有色层。

10. 发明申请

US20120319264A1 SEMICONDUCTOR DEVICE WITH HEAT SPREADER 有权
公开(公告)号：US20120319264A1
公开(公告)日：2012-12-20
申请号：US13596708
申请日：2012-08-28
申请人： Tomoyuki Fukuda , Yoshihiro Kubota , Hiroshi Ohtsubo , Yuichi Asano
发明人： Tomoyuki Fukuda , Yoshihiro Kubota , Hiroshi Ohtsubo , Yuichi Asano
IPC分类号： H01L23/48
CPC分类号： H01L23/4334 , H01L21/561 , H01L23/3128 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L24/97 , H01L2224/32225 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/49171 , H01L2224/73265 , H01L2224/83192 , H01L2224/92247 , H01L2224/97 , H01L2924/00014 , H01L2924/01006 , H01L2924/01029 , H01L2924/01074 , H01L2924/014 , H01L2924/07802 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2224/85 , H01L2924/00 , H01L2924/00012 , H01L2924/20752 , H01L2224/05599
摘要： A BGA type semiconductor device includes: a substrate having wirings and electrodes; a semiconductor element disposed on the substrate, having a rectangular plan shape, and a plurality of electrodes disposed along each side of the semiconductor element; a plurality of wires connecting the electrodes on the semiconductor element with the electrodes on the substrate; a heat dissipation member disposed on the substrate, covering the semiconductor element, and having openings formed in areas facing apex portions of the plurality of wires connected to the electrodes formed along each side of the semiconductor element; and a sealing resin member for covering and sealing the semiconductor element and heat dissipation member.

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