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1. 发明授权

US08252206B2 Amorphous film of composite oxide, crystalline film of composite oxide, method of producing said films and sintered compact of composite oxide 有权
标题翻译：复合氧化物的无定形膜，复合氧化物的结晶膜，所述膜的制造方法和复合氧化物的烧结体
公开(公告)号：US08252206B2
公开(公告)日：2012-08-28
申请号：US12666306
申请日：2008-06-13
申请人： Masakatsu Ikisawa , Masataka Yahagi , Kozo Osada , Takashi Kakeno
发明人： Masakatsu Ikisawa , Masataka Yahagi , Kozo Osada , Takashi Kakeno
IPC分类号： H01B1/08
CPC分类号： C23C14/086 , C04B35/457 , C04B35/6262 , C04B35/62695 , C04B35/63416 , C04B2235/3206 , C04B2235/3286 , C04B2235/3293 , C04B2235/5445 , C04B2235/6562 , C04B2235/77 , C23C14/3414 , C23C14/5806
摘要： Provided is an amorphous film comprised substantially of indium, tin, magnesium and oxygen, and containing tin at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Mg) and magnesium at a ratio of 0.1 to 2.0% based on an atomicity ratio of Mg/(In+Sn+Mg) with remnant being indium and oxygen, and having a film resistivity of 0.4 mΩcm or less as a result of crystallizing the film by annealing the film at a temperature of 260° C. or lower. An amorphous ITO thin film for use as a display electrode and the like in flat panel displays is obtained by way of sputter deposition without heating the substrate and without the need of adding water during the deposition. This amorphous ITO film has the property of being crystallized by annealing at 260° C. or lower, which is not such a high temperature, and having low resistivity after crystallization. Also provided are a method of producing the film and a sintered compact for producing the film.
摘要翻译：本发明提供一种非晶膜，其基本上由铟，锡，镁和氧组成，并且以Sn /（In + Sn + Mg）和镁的原子比为5〜15％，比例为0.1〜基于与残留物为铟和氧的Mg /（In + Sn + Mg）的原子数比为2.0％，并且由于通过在温度下退火该膜而使膜结晶而导致膜电阻率为0.4mΩ/ 为260℃以下。在平板显示器中用作显示电极等的非晶ITO薄膜通过溅射沉积而不加热基板而不需要在沉积期间加入水来获得。该非晶ITO膜具有通过在260℃以下的退火而结晶化的特性，该温度不是这样高的温度，结晶后的电阻率低。还提供了制造该膜的方法和用于制造该膜的烧结体。

2. 发明授权

US09663405B2 Oxide sintered compact, its production method, and raw material powder for producing oxide sintered compact 有权
公开(公告)号：US09663405B2
公开(公告)日：2017-05-30
申请号：US13375404
申请日：2010-05-28
申请人： Masakatsu Ikisawa , Masataka Yahagi , Kozo Osada , Takashi Kakeno , Hideo Takami
发明人： Masakatsu Ikisawa , Masataka Yahagi , Kozo Osada , Takashi Kakeno , Hideo Takami
IPC分类号： C04B35/453 , C01G15/00 , C04B35/626 , C23C14/08 , C23C14/34 , H01B1/08
CPC分类号： C04B35/453 , C01G15/006 , C01P2006/12 , C01P2006/40 , C01P2006/80 , C04B35/6261 , C04B35/62655 , C04B35/62675 , C04B2235/3284 , C04B2235/3286 , C04B2235/5409 , C04B2235/5436 , C04B2235/5445 , C04B2235/604 , C04B2235/656 , C04B2235/6585 , C04B2235/724 , C04B2235/77 , C23C14/086 , C23C14/3414 , H01B1/08
摘要： An oxide sintered compact made of indium (In), gallium (Ga), zinc (Zn) and oxygen (O) and represented by a formula of InxGayZnzOa [wherein x/(x+y) is 0.2 to 0.8, z/(x+y+z) is 0.1 to 0.5, and a=(3/2)x+(3/2)y+z], wherein the concentration of volatile impurities contained in the oxide sintered compact is 20 ppm or less. Provided is technology for application to the production of an IGZO target capable of achieving high densification and low bulk resistance of the sputtering target, preventing swelling and cracks of the target during the production process, minimizing the generation of nodules, inhibiting abnormal discharge, and enabling DC sputtering.

3. 发明申请

US20120319057A1 Sintered Compact, Amorphous Film and Crystalline Film of Composite Oxide, and Process for Producing the Films 有权
标题翻译：复合氧化物的烧结紧凑，无定形膜和结晶膜，以及制备膜的方法
公开(公告)号：US20120319057A1
公开(公告)日：2012-12-20
申请号：US13592520
申请日：2012-08-23
申请人： Masakatsu Ikisawa , Masataka Yahagi , Kozo Osada , Takashi Kakeno
发明人： Masakatsu Ikisawa , Masataka Yahagi , Kozo Osada , Takashi Kakeno
IPC分类号： H01B1/08
CPC分类号： C23C14/086 , C04B35/01 , C04B35/457 , C04B35/6262 , C04B35/6263 , C04B35/62675 , C04B35/62695 , C04B35/63416 , C04B2235/3206 , C04B2235/3208 , C04B2235/3286 , C04B2235/3293 , C04B2235/5445 , C04B2235/6562 , C04B2235/72 , C04B2235/77 , C23C14/5806
摘要： An amorphous film comprising indium, tin, calcium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca) and calcium is contained at a ratio of 0.1 to 2.0% based on an atomicity ratio of Ca/(In+Sn+Ca), and remnant is indium and oxygen, is provided. The film can be crystallized by annealing at 260° C. or lower in which resistivity of the film will be 0.4 mΩcm or less. In this manner, an ITO thin film for use as a display electrode or the like in a flat panel display can be made into an amorphous ITO film by way of sputter deposition without heating the substrate or adding water during deposition. This ITO film can be crystallized by annealing at a low temperature and will have low resistivity. Methods of producing such films and sintered compacts are provided.
摘要翻译：包含铟，锡，钙和氧的非晶膜，其中锡以Sn /（In + Sn + Ca）原子数比为5〜15％，钙含量为0.1〜2.0的比例基于Ca /（In + Sn + Ca）的原子数比，并且残留物是铟和氧。膜可以在260℃以下的退火下进行结晶化，其中膜的电阻率为0.4mΩ/ cm以下。以这种方式，在平板显示器中用作显示电极等的ITO薄膜可以通过溅射沉积而不加热基板或在沉积期间加水来制成非晶ITO膜。该ITO膜可以通过在低温退火而结晶，并且具有低电阻率。提供制造这种膜和烧结体的方法。

4. 发明申请

US20120103804A1 Oxide Sintered Compact, Its Production Method, and Raw Material Powder for Producing Oxide Sintered Compact 有权
标题翻译：氧化物烧结紧凑型，其生产方法和用于生产氧化物烧结的原料粉末
公开(公告)号：US20120103804A1
公开(公告)日：2012-05-03
申请号：US13375404
申请日：2010-05-28
申请人： Masakatsu Ikisawa , Masataka Yahagi , Kozo Osada , Takashi Kakeno , Hideo Takami
发明人： Masakatsu Ikisawa , Masataka Yahagi , Kozo Osada , Takashi Kakeno , Hideo Takami
IPC分类号： C23C14/08 , H01L21/34
CPC分类号： C04B35/453 , C01G15/006 , C01P2006/12 , C01P2006/40 , C01P2006/80 , C04B35/6261 , C04B35/62655 , C04B35/62675 , C04B2235/3284 , C04B2235/3286 , C04B2235/5409 , C04B2235/5436 , C04B2235/5445 , C04B2235/604 , C04B2235/656 , C04B2235/6585 , C04B2235/724 , C04B2235/77 , C23C14/086 , C23C14/3414 , H01B1/08
摘要： An oxide sintered compact made of indium (In), gallium (Ga), zinc (Zn) and oxygen (O) and represented by a formula of InxGayZnzOa [wherein x/(x+y) is 0.2 to 0.8, z/(x+y+z) is 0.1 to 0.5, and a=(3/2)x+(3/2)y+z], wherein the concentration of volatile impurities contained in the oxide sintered compact is 20 ppm or less. Provided is technology for application to the production of an IGZO target capable of achieving high densification and low bulk resistance of the sputtering target, preventing swelling and cracks of the target during the production process, minimizing the generation of nodules, inhibiting abnormal discharge, and enabling DC sputtering.
摘要翻译：由铟（In），镓（Ga），锌（Zn）和氧（O）制成并由式InxGayZnzOa表示的氧化物烧结体[其中x /（x + y）为0.2〜0.8，z /（x + y + z）为0.1〜0.5，a =（3/2）x +（3/2）y + z]，其中，所述氧化物烧结体中含有的挥发性杂质的浓度为20ppm以下。提供了用于生产能够实现溅射靶的高致密化和低体积电阻的IGZO靶的技术，在生产过程中防止靶的膨胀和裂纹，使结节的产生最小化，抑制异常放电，并使能 DC溅射。

5. 发明申请

US20110163279A1 OXIDE SINTERED COMPACT FOR PRODUCING TRANSPARENT CONDUCTIVE FILM 有权
标题翻译：用于生产透明导电膜的氧化物烧结紧密
公开(公告)号：US20110163279A1
公开(公告)日：2011-07-07
申请号：US13063141
申请日：2009-09-18
申请人： Masakatsu Ikisawa , Masataka Yahagi
发明人： Masakatsu Ikisawa , Masataka Yahagi
IPC分类号： H01B1/02 , C23C14/35 , C23C14/08
CPC分类号： C23C14/3414 , C04B35/01 , C04B35/457 , C04B35/6263 , C04B35/62635 , C04B35/62695 , C04B2235/3217 , C04B2235/3262 , C04B2235/3279 , C04B2235/3284 , C04B2235/3286 , C04B2235/3287 , C04B2235/3293 , C04B2235/5445 , C04B2235/604 , C04B2235/6562 , C23C14/086
摘要： The present invention provides a sputtering target suitable for producing an amorphous transparent conductive film which can be formed without heating a substrate and without feeding water during the sputtering; which is easily crystallized by low-temperature annealing; and which has low resistivity after the crystallization. An oxide sintered compact containing an indium oxide as a main component, while containing tin as a first additive element, and one or more elements selected from germanium, nickel, manganese, and aluminum as a second additive element, with the content of tin which is the first additive element being 2-15 atom % relative to the total content of indium and tin, and the total content of the second additive element being 0.1-2 atom % relative to the total content of indium, tin and the second additive element.
摘要翻译：本发明提供一种溅射靶，适用于制造无需加热基板而不在溅射期间供水的非晶透明导电膜; 其通过低温退火容易结晶; 并且在结晶后具有低电阻率。含有氧化铟作为主要成分的氧化物烧结体，同时含有锡作为第一添加元素，以及一种或多种选自锗，镍，锰和铝的元素作为第二添加元素，锡的含量为第一添加元素相对于铟和锡的总含量为2-15原子％，第二添加元素的总含量相对于铟，锡和第二添加元素的总含量为0.1-2原子％。

6. 发明申请

US20090200525A1 Zinc Oxide Based Transparent Electric Conductor, Sputtering Target for Forming of the Conductor and Process for Producing the Target 有权
标题翻译：基于氧化锌的透明电导体，用于形成导体的溅射靶和用于生产靶的方法
公开(公告)号：US20090200525A1
公开(公告)日：2009-08-13
申请号：US12307380
申请日：2007-05-23
申请人： Masakatsu Ikisawa , Masataka Yahagi
发明人： Masakatsu Ikisawa , Masataka Yahagi
IPC分类号： H01B1/08 , C23C14/34 , B29C67/04
CPC分类号： C23C14/086 , C04B35/453 , C04B35/645 , C04B2235/3217 , C04B2235/3272 , C04B2235/3275 , C04B2235/3279 , C04B2235/3281 , C04B2235/3284 , C04B2235/3286 , C04B2235/3291 , C04B2235/6562 , C04B2235/658 , C23C14/3414 , H01B1/08
摘要： Provided is a zinc oxide transparent electric conductor having zinc oxide (ZnO) as its principal component, containing an element to become an n-type dopant to zinc oxide, containing metal M in which P(P=(G+H mix)/RT, wherein G is the Gibbs free energy at temperature T of the metal, H mix is the mixing enthalpy at temperature T of zinc oxide and the metal, R is the gas constant, and T is the temperature) as a parameter showing the wettability with zinc oxide is 6 or less and in which its resistivity is smaller than the resistivity of zinc oxide added with the n-type dopant, and wherein concentration of metal M in relation to the total atomicity of zinc and the n-type dopant and metal M, which are all metal atoms configuring the zinc oxide transparent electric conductor, is 0.05 to 2.0 at %. In the development of a transparent electric conductor that does not contain raw material In which is expensive and with concern of resource depletion, provided is a low resistivity transparent electric conductor by exceeding the limits of the conventional development technique of the single dopant method, presenting guidelines for selecting a secondary additive material effective in achieving low resistivity, and indicating types of specific materials and the appropriate concentration range.
摘要翻译：提供了以氧化锌（ZnO）为主要成分的氧化锌透明导电体，含有成为与氧化锌成为n型掺杂剂的元素，含有金属M，其中P（P =（G + H mix）/ RT ，其中G是金属温度T下的吉布斯自由能，H混合物是氧化锌和金属的温度T的混合焓，R是气体常数，T是温度）作为参数，表示润湿性氧化锌为6以下，其电阻率小于添加有n型掺杂剂的氧化锌的电阻率，金属M的相对于锌的总原子数和n型掺杂剂和金属M的浓度构成氧化锌透明导电体的全部金属原子为0.05〜2.0原子％。在不含原材料的透明电导体的开发中，其中昂贵并且关心资源耗尽，提供了超过单一掺杂剂方法的常规开发技术的限制的低电阻率透明导电体，提供指导用于选择有效实现低电阻率的次要添加剂材料，并指示特定材料的类型和适当的浓度范围。

7. 发明授权

US08277694B2 Sintered compact of composite oxide, amorphous film of composite oxide, process for producing said film, crystalline film of composite oxide and process for producing said film 有权
标题翻译：复合氧化物的烧结体，复合氧化物的非晶膜，所述薄膜的制造方法，复合氧化物的结晶膜及其制造方法
公开(公告)号：US08277694B2
公开(公告)日：2012-10-02
申请号：US12668216
申请日：2008-07-04
申请人： Masakatsu Ikisawa , Masataka Yahagi , Kozo Osada , Takashi Kakeno
发明人： Masakatsu Ikisawa , Masataka Yahagi , Kozo Osada , Takashi Kakeno
IPC分类号： H01B1/08 , B05D5/12
CPC分类号： C23C14/086 , C04B35/01 , C04B35/457 , C04B35/6262 , C04B35/6263 , C04B35/62675 , C04B35/62695 , C04B35/63416 , C04B2235/3206 , C04B2235/3208 , C04B2235/3286 , C04B2235/3293 , C04B2235/5445 , C04B2235/6562 , C04B2235/72 , C04B2235/77 , C23C14/5806
摘要： Provided is an amorphous film substantially comprised of indium, tin, calcium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca) and calcium is contained at a ratio of 0.1 to 2.0% based on an atomicity ratio of Ca/(In+Sn+Ca), and remnant is indium and oxygen. The film can be further crystallized by annealing at a temperature of 260° C. or lower in which resistivity of the film will be 0.4 mΩcm or less. An ITO thin film for use as a display electrode or the like in a flat panel display can be made into an amorphous ITO film by way of sputter deposition without heating the substrate or adding water during deposition. This ITO film is characterized in that it will crystallize by annealing at a temperature of 260° C. or less, which is not such a high temperature, and have low resistivity after being crystallized. Thus, the present invention aims to provide a method of producing such a film and a sintered compact for producing such a film.
摘要翻译：提供了基本上由铟，锡，钙和氧组成的非晶体膜，其中以Sn /（In + Sn + Ca）的原子数比为5〜15％的比率含有锡，以含有钙的比例相对于Ca /（In + Sn + Ca）的原子数比为0.1〜2.0％，残留物为铟和氧。通过在260℃以下的温度下进行退火，可以使膜进一步结晶化，其中电阻率为0.4mΩ/ cm 2以上。在平板显示器中用作显示电极等的ITO薄膜可以通过溅射沉积而不加热衬底或在沉积期间加水来制成非晶ITO膜。该ITO膜的特征在于，通过在260℃以下的温度退火而结晶，其温度不高，结晶后电阻率低。因此，本发明的目的在于提供一种制造这种膜的方法和用于制造这种膜的烧结体。

8. 发明申请

US20110306165A1 METHOD FOR PRODUCING a-IGZO OXIDE THIN FILM 有权
标题翻译：用于生产一氧化氮薄膜的方法
公开(公告)号：US20110306165A1
公开(公告)日：2011-12-15
申请号：US12743593
申请日：2008-12-24
申请人： Masakatsu Ikisawa , Masataka Yahagi
发明人： Masakatsu Ikisawa , Masataka Yahagi
IPC分类号： H01L21/20 , C23C14/08 , C23C14/34
CPC分类号： H01L29/7869 , C04B35/01 , C04B35/453 , C04B35/62218 , C04B35/6261 , C04B35/6263 , C04B35/62695 , C04B2235/3284 , C04B2235/3286 , C04B2235/5436 , C04B2235/5445 , C04B2235/6562 , C04B2235/6565 , C04B2235/6567 , C04B2235/6585 , C04B2235/77 , C23C14/086 , C23C14/3414 , H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02592 , H01L21/02631 , H01L29/66969 , Y10T428/31786
摘要： There is provided a method for producing an a-IGZO oxide thin film by sputtering, which can control the carrier density of the film to a given value with high reproducibility. The method is an amorphous In—Ga—Zn—O based oxide thin film production method including: providing a sintered oxide material consisting essentially of indium (In), gallium (Ga), zinc (Zn), and oxygen (O) as constituent elements, wherein the ratio [In]/([In]+[Ga]) of the number of indium atoms to the total number of indium and gallium atoms is from 20% to 80%, the ratio [Zn]/([In]+[Ga]+[Zn]) of the number of zinc atoms to the total number of indium, gallium and zinc atoms is from 10% to 50%, and the sintered oxide material has a specific resistance of 1.0×10−1 Ωcm or less; and producing a film on a substrate by direct current sputtering at a sputtering power density of 2.5 to 5.5 W/cm2 using the sintered oxide material as a sputtering target.
摘要翻译：提供了通过溅射制造a-IGZO氧化物薄膜的方法，其可以以高再现性将膜的载流子密度控制在给定值。该方法是一种无定形的In-Ga-Zn-O系氧化物薄膜的制造方法，其特征在于，提供基本上由铟（In），镓（Ga），锌（Zn）和氧（O）元素，其中铟原子数与铟和镓原子总数的比[In] /（[In] + [Ga]）为20％至80％，[Zn] /（[In ] + [Ga] + [Zn]）相对于铟，镓和锌原子总数为10〜50％，烧结氧化物的电阻率为1.0×10-1 ＆OHgr; cm以下; 使用烧结氧化物作为溅射靶，以2.5〜5.5W / cm 2的溅射功率密度通过直流溅射在基板上制造膜。

9. 发明授权

US08007693B2 Zinc oxide based transparent electric conductor, sputtering target for forming of the conductor and process for producing the target 有权
标题翻译：氧化锌基透明导体，用于形成导体的溅射靶和用于制造靶的方法
公开(公告)号：US08007693B2
公开(公告)日：2011-08-30
申请号：US12307380
申请日：2007-05-23
申请人： Masakatsu Ikisawa , Masataka Yahagi
发明人： Masakatsu Ikisawa , Masataka Yahagi
IPC分类号： H01B1/08 , B05D5/12
CPC分类号： C23C14/086 , C04B35/453 , C04B35/645 , C04B2235/3217 , C04B2235/3272 , C04B2235/3275 , C04B2235/3279 , C04B2235/3281 , C04B2235/3284 , C04B2235/3286 , C04B2235/3291 , C04B2235/6562 , C04B2235/658 , C23C14/3414 , H01B1/08
摘要： Provided is a zinc oxide transparent electric conductor having zinc oxide (ZnO) as its principal component, containing an element to become an n-type dopant to zinc oxide, containing metal M in which P(P=(G+H mix)/RT, wherein G is the Gibbs free energy at temperature T of the metal, H mix is the mixing enthalpy at temperature T of zinc oxide and the metal, R is the gas constant, and T is the temperature) as a parameter showing the wettability with zinc oxide is 6 or less and in which its resistivity is smaller than the resistivity of zinc oxide added with the n-type dopant, and wherein concentration of metal M in relation to the total atomicity of zinc and the n-type dopant and metal M, which are all metal atoms configuring the zinc oxide transparent electric conductor, is 0.05 to 2.0 at %. In the development of a transparent electric conductor that does not contain raw material In which is expensive and with concern of resource depletion, provided is a low resistivity transparent electric conductor by exceeding the limits of the conventional development technique of the single dopant method, presenting guidelines for selecting a secondary additive material effective in achieving low resistivity, and indicating types of specific materials and the appropriate concentration range.
摘要翻译：提供了以氧化锌（ZnO）为主要成分的氧化锌透明导电体，含有成为与氧化锌成为n型掺杂剂的元素，含有金属M，其中P（P =（G + H mix）/ RT ，其中G是金属温度T下的吉布斯自由能，H混合物是氧化锌和金属的温度T的混合焓，R是气体常数，T是温度）作为参数，表示润湿性氧化锌为6以下，其电阻率小于添加有n型掺杂剂的氧化锌的电阻率，金属M的相对于锌的总原子数和n型掺杂剂和金属M的浓度构成氧化锌透明导电体的全部金属原子为0.05〜2.0原子％。在不含原材料的透明电导体的开发中，其中昂贵并且关心资源耗尽，提供了超过单一掺杂剂方法的常规开发技术的限制的低电阻率透明导电体，提供指导用于选择有效实现低电阻率的次要添加剂材料，并指示特定材料的类型和适当的浓度范围。

10. 发明申请

US20110163277A1 OXIDE SINTERED COMPACT FOR PREPARING TRANSPARENT CONDUCTIVE FILM 审中-公开
标题翻译：用于制备透明导电膜的氧化物烧结紧密
公开(公告)号：US20110163277A1
公开(公告)日：2011-07-07
申请号：US13063151
申请日：2009-09-18
申请人： Masakatsu Ikisawa , Masataka Yahagi
发明人： Masakatsu Ikisawa , Masataka Yahagi
IPC分类号： H01B1/02 , C23C14/34
CPC分类号： H01B1/08 , C04B35/01 , C04B35/457 , C04B35/62695 , C04B2235/3217 , C04B2235/3265 , C04B2235/3279 , C04B2235/3286 , C04B2235/3287 , C04B2235/3293 , C04B2235/5445 , C04B2235/604 , C04B2235/6562 , C04B2235/77 , C23C14/08 , C23C14/086 , C23C14/3414
摘要： The present invention provides an ITO amorphous transparent conductive film used in a display electrode for a flat panel display or the like, which can be produced without heating a substrate and without feeding water during the sputtering, while achieving both high etchability and lower resistivity at high levels. An oxide sintered compact containing indium oxide as a main component, while containing one or more elements selected from nickel, manganese, aluminum and germanium as a first additive element, with the total content of the first additive element being 2-12 atom % relative to the total content of indium and the first additive element.
摘要翻译：本发明提供一种用于平板显示器等的显示电极中的ITO非晶体透明导电膜，其可以在不加热基板的同时在溅射期间不加水而制造，同时在高的温度下实现高的蚀刻性和较低的电阻率水平。含有氧化铟作为主要成分的氧化物烧结体，同时含有选自镍，锰，铝和锗的一种或多种元素作为第一添加元素，第一添加元素的总含量相对于第一添加元素为2-12原子％铟和第一添加元素的总含量。

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