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1. 发明授权

US5984038A Combination man-powered and motor-driven vehicle 失效
标题翻译：组合人力和电动车辆
公开(公告)号：US5984038A
公开(公告)日：1999-11-16
申请号：US696480
申请日：1996-08-14
申请人： Masakatsu Fujiwara , Masaru Tanaka , Tatsuaki Tanaka , Hiroyasu Ishihara , Toshihiro Suhara , Kazuhisa Matsumoto
发明人： Masakatsu Fujiwara , Masaru Tanaka , Tatsuaki Tanaka , Hiroyasu Ishihara , Toshihiro Suhara , Kazuhisa Matsumoto
IPC分类号： B62M6/55 , B62M6/45 , B62M6/50 , B62M6/60 , B62K11/00
CPC分类号： B62M6/45 , B60L11/1801 , B62M6/50 , B62M6/60 , B60L2200/12 , Y02T10/7005
摘要： A vehicle having a man power driving system in which a driving force by man power is applied through a gear change mechanism to rotate a wheel, an a motor driving system in which the wheel is rotated by a driving force of a motor. The man power driving system is equipped with a torque detector for detecting a man power driving force so as to drive the motor according to a magnitude of the man power driving force detected by the turque detector. A particularly durable gear change mechanism is not required, and thus a common gear change mechanism for bicycle can be used, thereby simplifying construction.
摘要翻译：一种具有人力驱动系统的车辆，其中通过变速机构施加人力的驱动力以使车轮旋转;马达驱动系统，其中所述车轮通过马达的驱动力旋转。人力驱动系统配备有用于检测人力驱动力的扭矩检测器，以根据由倾斜检测器检测到的人力驱动力的大小驱动马达。不需要特别耐用的变速机构，因此可以使用用于自行车的普通变速机构，从而简化结构。

2. 发明授权

US5039622A Method for manufacturing a thin-film transistor operable at high voltage 失效
标题翻译：制造可在高电压下工作的薄膜晶体管的方法
公开(公告)号：US5039622A
公开(公告)日：1991-08-13
申请号：US607340
申请日：1990-10-31
申请人： Hiroyasu Ishihara
发明人： Hiroyasu Ishihara
IPC分类号： H01L27/12 , H01L21/336 , H01L29/78 , H01L29/786
CPC分类号： H01L29/78642 , Y10S148/082 , Y10S148/15
摘要： There are disclosed a structure and a manufacturing method of a MOS-type thin-film field effect transistor composed of a substrate having an insulating main surface, a gate electrode formed on the insulating main surface to have an upper surface and a side surface at its edge, an insulating film covering at least the upper and side surfaces of the gate electrode, a semiconductor film having three continuous first, second and third portions, the first portion positioned above the upper surface of the gate electrode, the second portion being formed in contact with the insulator film at the side surface of the gate electrode and the third portion positioned above the substrate without interposing the gate electrode, a side-wall insulator formed on a part of the third portion of the semiconductor film and having a side surface contacting the second portion of the semiconductor film, and source and drain regions formed by introducing impurity atoms into the first portion and another part of the third portion of the semiconductor film, the part and the other part of the third portion being in contact with each other. The introduction of the impurity atoms is performed with use of the sidewall insulator as a mask by ion-implantation process or a process for converting insulator solution containing impurity atoms into a solid-state insulator by a heat treatment.

3. 发明申请

US20060199371A1 SEMICONDUCTOR DEVICES PASSIVATION FILM 审中-公开
标题翻译：半导体器件钝化膜
公开(公告)号：US20060199371A1
公开(公告)日：2006-09-07
申请号：US11419450
申请日：2006-05-19
申请人： Hideki Mizuhara , Yasunori Inoue , Hiroyuki Watanabe , Masaki Hirase , Kaori Misawa , Hiroyuki Aoe , Kimihide Saito , Hiroyasu Ishihara
发明人： Hideki Mizuhara , Yasunori Inoue , Hiroyuki Watanabe , Masaki Hirase , Kaori Misawa , Hiroyuki Aoe , Kimihide Saito , Hiroyasu Ishihara
IPC分类号： H01L21/4763
CPC分类号： H01L21/3121 , H01L21/02126 , H01L21/02164 , H01L21/022 , H01L21/02274 , H01L21/02282 , H01L21/02321 , H01L21/02351 , H01L21/31155 , H01L21/316 , H01L21/31633 , H01L21/76801 , H01L21/76825
摘要： A semiconductor device includes a substrate and wirings located on the substrate. A passivation film including a first insulating film containing an impurity is located on the wirings. The first insulating film is formed from silicon oxide film materials containing greater than one percent carbon.
摘要翻译：半导体器件包括衬底和位于衬底上的布线。包含含有杂质的第一绝缘膜的钝化膜位于布线上。第一绝缘膜由含有大于1％碳的氧化硅膜材料形成。

4. 发明授权

US6150725A Semiconductor devices with means to reduce contamination 失效
标题翻译：具有减少污染的手段的半导体器件
公开(公告)号：US6150725A
公开(公告)日：2000-11-21
申请号：US030560
申请日：1998-02-25
申请人： Kaori Misawa , Hiroyasu Ishihara , Hideki Mizuhara
发明人： Kaori Misawa , Hiroyasu Ishihara , Hideki Mizuhara
IPC分类号： H01L21/60 , H01L23/31 , H01L23/485 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L24/05 , H01L23/3171 , H01L24/03 , H01L24/48 , H01L2224/02166 , H01L2224/04042 , H01L2224/05093 , H01L2224/05556 , H01L2224/05624 , H01L2224/45144 , H01L2224/48463 , H01L2224/48624 , H01L2224/85201 , H01L24/45 , H01L24/50 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/05042 , H01L2924/1305 , H01L2924/13091 , H01L2924/19041 , H01L2924/19043
摘要： An enclosure is formed on a substrate of a semiconductor device surrounding a bonding pad, such that a groove is formed between the enclosure and the bonding pad. An insulating film is formed over the substrate, including the enclosure and the groove. The groove and the film prevent moisture and contaminants from seeping into the semiconductor device.
摘要翻译：在围绕焊盘的半导体器件的基板上形成外壳，使得在外壳和接合焊盘之间形成凹槽。绝缘膜形成在基板上，包括外壳和凹槽。槽和膜防止水分和污染物渗入半导体器件。

5. 发明授权

US5001540A Thin-film transistor operable at high voltage and a method for manufacturing the same 失效
标题翻译：在高电压下工作的薄膜晶体管及其制造方法
公开(公告)号：US5001540A
公开(公告)日：1991-03-19
申请号：US321923
申请日：1989-03-13
申请人： Hiroyasu Ishihara
发明人： Hiroyasu Ishihara
IPC分类号： H01L27/12 , H01L21/336 , H01L29/78 , H01L29/786
CPC分类号： H01L29/78642 , Y10S148/082 , Y10S148/15
摘要： There are disclosed a structure and a manufacturing method of a MOS-type thin-film field effect transistor composed of a substrate having an insulating main surface, a gate electrode formed on the insulating main surface to have an upper surface and a side surface at its edge, an insulating film covering at least the upper and side surfaces of the gate electrode, a semiconductor film having three continuous first, second and third portions, the first portion positioned above the upper surface of the gate electrode, the second portion being formed in contact with the insulator film at the side surface of the gate electrode and the third portion positioned above the substrate without interposing the gate electrode, a side-wall insulator formed on a part of the third portion of the semiconductor film and having a side surface contacting the second portion of the semiconductor film, and source and drain regions formed by introducing impurity atoms into the first portion and another part of the third portion of the semiconductor film, the part and the other part of the third portion being in contact with each other. The introduction of the impurity atoms is performed with use of the side-wall insulator as a mask by ion-implantation process or a process for converting insulator solution containing impurity atoms into a solid-state insulator by a heat-treatment.

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