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1. 发明申请

US20130048977A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130048977A1
公开(公告)日：2013-02-28
申请号：US13592870
申请日：2012-08-23
申请人： Masahiro WATANABE , Mitsuo MASHIYAMA , Takuya HANDA , Kenichi OKAZAKI
发明人： Masahiro WATANABE , Mitsuo MASHIYAMA , Takuya HANDA , Kenichi OKAZAKI
IPC分类号： H01L29/786 , H01L21/44
CPC分类号： H01L29/7869 , H01L29/24 , H01L29/41733 , H01L29/78606
摘要： To provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and has high reliability. To provide a method for manufacturing the semiconductor device. The semiconductor device includes a gate electrode, a gate insulating film formed over the gate electrode, an oxide semiconductor film formed over the gate insulating film, a source electrode and a drain electrode formed over the oxide semiconductor film, and a protective film. The protective film includes a metal oxide film, and the metal oxide film has a film density of higher than or equal to 3.2 g/cm3.
摘要翻译：提供一种具有稳定的电特性并具有高可靠性的氧化物半导体的半导体装置。提供制造半导体器件的方法。半导体器件包括栅电极，形成在栅电极上的栅极绝缘膜，形成在栅极绝缘膜上的氧化物半导体膜，形成在氧化物半导体膜上的源电极和漏电极以及保护膜。保护膜包括金属氧化物膜，并且金属氧化物膜具有高于或等于3.2g / cm 3的膜密度。

2. 发明申请

US20130048978A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130048978A1
公开(公告)日：2013-02-28
申请号：US13592942
申请日：2012-08-23
申请人： Masahiro WATANABE , Mitsuo MASHIYAMA , Takuya HANDA , Kenichi OKAZAKI , Shunpei YAMAZAKI
发明人： Masahiro WATANABE , Mitsuo MASHIYAMA , Takuya HANDA , Kenichi OKAZAKI , Shunpei YAMAZAKI
IPC分类号： H01L29/22
CPC分类号： H01L29/7869 , H01L29/4908 , H01L29/66742 , H01L29/78696
摘要： Provided is a semiconductor device including an oxide semiconductor and having stable electrical characteristics. Specifically, a semiconductor device including an oxide semiconductor and including a gate insulating film with favorable characteristics is provided. Further, a method for manufacturing the semiconductor device is provided. The semiconductor device includes a gate electrode, a gate insulating film over the gate electrode, an oxide semiconductor film over the gate insulating film, and a source electrode and a drain electrode in contact with the oxide semiconductor film. The gate insulating film includes at least a silicon oxynitride film and an oxygen release type oxide film which is formed over the silicon oxynitride film. The oxide semiconductor film is formed on and in contact with the oxygen release type oxide film.
摘要翻译：提供了包括氧化物半导体并且具有稳定的电特性的半导体器件。具体地，提供了包括氧化物半导体并且包括具有有利特性的栅极绝缘膜的半导体器件。此外，提供了一种用于制造半导体器件的方法。半导体器件包括栅电极，栅电极上的栅极绝缘膜，栅极绝缘膜上的氧化物半导体膜，以及与氧化物半导体膜接触的源电极和漏电极。栅极绝缘膜至少包括形成在氧氮化硅膜上的氮氧化硅膜和氧释放型氧化物膜。氧化物半导体膜与氧释放型氧化物膜形成并接触。

3. 发明申请

US20130043465A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20130043465A1
公开(公告)日：2013-02-21
申请号：US13568451
申请日：2012-08-07
申请人： Kenichi OKAZAKI , Masahiro WATANABE , Mitsuo MASHIYAMA
发明人： Kenichi OKAZAKI , Masahiro WATANABE , Mitsuo MASHIYAMA
IPC分类号： H01L29/12 , H01L29/78
CPC分类号： H01L29/7869
摘要： An oxide semiconductor transistor comprising an oxide semiconductor layer with high conductivity is provided. A semiconductor device including an oxide semiconductor layer comprising an oxide containing indium, gallium, and zinc (IGZO) and a particle of indium oxide; a gate electrode overlapping with a channel formation region in the oxide semiconductor layer with a gate insulating film interposed therebetween; and a source electrode and a drain electrode overlapping with a source region and a drain region in the oxide semiconductor layer. The semiconductor device may be a top-gate oxide semiconductor transistor or a bottom-gate oxide semiconductor transistor. The oxide semiconductor layer may be formed over or below the source electrode and the drain electrode.
摘要翻译：提供了包括具有高导电性的氧化物半导体层的氧化物半导体晶体管。一种包括氧化物半导体层的半导体器件，包括含有铟，镓和锌（IGZO）的氧化物和氧化铟颗粒; 与所述氧化物半导体层中的沟道形成区域重叠的栅电极，其间插入有栅极绝缘膜; 以及与氧化物半导体层中的源极区域和漏极区域重叠的源极电极和漏极电极。半导体器件可以是顶栅氧化物半导体晶体管或底栅氧化物半导体晶体管。氧化物半导体层可以形成在源电极和漏电极之上或之下。

4. 发明申请

US20130011962A1 SPUTTERING TARGET, METHOD FOR MANUFACTURING SPUTTERING TARGET, AND METHOD FOR FORMING THIN FILM 有权
标题翻译：溅射目标，制造溅射目标的方法和形成薄膜的方法
公开(公告)号：US20130011962A1
公开(公告)日：2013-01-10
申请号：US13603484
申请日：2012-09-05
申请人： Shunpei YAMAZAKI , Tetsunori MARUYAMA , Yuki IMOTO , Hitomi SATO , Masahiro WATANABE , Mitsuo MASHIYAMA , Kenichi OKAZAKI , Motoki NAKASHIMA , Takashi SHIMAZU
发明人： Shunpei YAMAZAKI , Tetsunori MARUYAMA , Yuki IMOTO , Hitomi SATO , Masahiro WATANABE , Mitsuo MASHIYAMA , Kenichi OKAZAKI , Motoki NAKASHIMA , Takashi SHIMAZU
IPC分类号： H01L21/363 , C23C14/08 , C23C14/34
CPC分类号： C23C14/08 , B28B11/243 , C04B35/453 , C04B35/64 , C04B2235/3284 , C04B2235/3286 , C04B2235/76 , C23C14/086 , C23C14/3414 , C23C14/345 , H01L21/02565 , H01L21/02631 , H01L29/24 , H01L29/66969 , H01L29/7869
摘要： There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.
摘要翻译：已经有使用氧化物半导体形成的晶体管的可靠性与使用非晶硅形成的晶体管的可靠性差。因此，在本发明中，制造了包括使用氧化物半导体形成的高可靠性晶体管的半导体器件。使用包含具有结晶性的氧化物半导体的溅射靶，通过溅射法沉积氧化物半导体膜，并且其中晶体的c轴方向平行于氧化物半导体的顶表面的法向矢量。通过混合原料形成靶，使其组成比可以得到晶体结构。

5. 发明申请

US20120298998A1 METHOD FOR FORMING OXIDE SEMICONDUCTOR FILM, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于形成氧化物半导体膜的方法，半导体器件以及制造半导体器件的方法
公开(公告)号：US20120298998A1
公开(公告)日：2012-11-29
申请号：US13473653
申请日：2012-05-17
申请人： Shunpei YAMAZAKI , Masahiro WATANABE , Mitsuo MASHIYAMA , Kenichi OKAZAKI , Motoki NAKASHIMA , Hideyuki KISHIDA
发明人： Shunpei YAMAZAKI , Masahiro WATANABE , Mitsuo MASHIYAMA , Kenichi OKAZAKI , Motoki NAKASHIMA , Hideyuki KISHIDA
IPC分类号： H01L29/786 , H01L21/20
CPC分类号： H01L21/02631 , H01L21/02554 , H01L21/02565 , H01L29/66969 , H01L29/78603 , H01L29/78606 , H01L29/78618 , H01L29/7869
摘要： The impurity concentration in the oxide semiconductor film is reduced, and a highly reliability can be obtained.
摘要翻译：氧化物半导体膜中的杂质浓度降低，可以获得高可靠性。

6. 发明申请

US20100006141A1 PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD OF PHOTOELECTRIC CONVERSION DEVICE 审中-公开
标题翻译：光电转换装置及光电转换装置的制造方法
公开(公告)号：US20100006141A1
公开(公告)日：2010-01-14
申请号：US12499232
申请日：2009-07-08
申请人： Yoshiaki OIKAWA , Shingo EGUCHI , Mitsuo MASHIYAMA , Masatoshi KATANIWA , Hironobu SHOJI , Masataka NAKADA
发明人： Yoshiaki OIKAWA , Shingo EGUCHI , Mitsuo MASHIYAMA , Masatoshi KATANIWA , Hironobu SHOJI , Masataka NAKADA
IPC分类号： H01L31/048 , H01L31/00
CPC分类号： B32B5/26 , B32B5/022 , B32B5/024 , B32B27/20 , B32B27/281 , B32B27/285 , B32B27/286 , B32B27/34 , B32B27/36 , B32B2250/40 , B32B2250/44 , B32B2260/023 , B32B2260/046 , B32B2262/023 , B32B2262/0253 , B32B2262/0261 , B32B2262/0269 , B32B2262/0276 , B32B2262/101 , B32B2262/106 , B32B2264/102 , B32B2264/105 , B32B2307/202 , B32B2307/206 , B32B2307/558 , B32B2307/712 , B32B2307/748 , B32B2457/00 , H01L31/02008 , H01L31/046 , H01L31/0463 , H01L31/048 , Y02E10/549 , Y02P70/521
摘要： The purpose of the invention is to provide a highly reliable photoelectric conversion device having flexibility and resistance to external stress. In the photoelectric conversion device, following are included: a first sealing layer and a second sealing layer that are provided to face each other; and a photoelectric conversion element group which is provided by being interposed between the first sealing layer and second sealing layer that are provided to face each other. The first sealing layer includes a first structure body in which a first fibrous body is impregnated with a first organic resin, the second sealing layer includes a second structure body in which a second fibrous body is impregnated with a second organic resin, and a periphery of the photoelectric conversion element group includes a region where the first sealing layer and second sealing layer that are provided to face each other are attached to each other.
摘要翻译：本发明的目的是提供一种高可靠性的光电转换装置，具有灵活性和抗外部应力的能力。在光电转换装置中，包括：第一密封层和第二密封层，其设置成彼此相对; 以及通过设置在彼此相对设置的第一密封层和第二密封层之间而设置的光电转换元件组。第一密封层包括第一结构体，第一纤维体浸渍有第一有机树脂，第二密封层包括第二结构体，第二纤维体浸渍有第二有机树脂，第二结构体的周边光电转换元件组包括彼此相对地设置的彼此相对设置的第一密封层和第二密封层的区域。

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