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1. 发明申请

US20080308909A1 EPITAXIAL WAFERS, METHOD FOR MANUFACTURING OF EPITAXIAL WAFERS, METHOD OF SUPPRESSING BOWING OF THESE EPITAXIAL WAFERS AND SEMICONDUCTOR MULTILAYER STRUCTURES USING THESE EPITAXIAL WAFERS 有权
标题翻译：外延波形，外延波形制造方法，使用这些外延波形抑制这些外延波形和半导体多层结构的方法
公开(公告)号：US20080308909A1
公开(公告)日：2008-12-18
申请号：US12193811
申请日：2008-08-19
申请人： Masahiro Sakai , Mitsuhiro Tanaka , Takashi Egawa
发明人： Masahiro Sakai , Mitsuhiro Tanaka , Takashi Egawa
IPC分类号： H01L29/20 , B32B7/00 , H01L21/20
CPC分类号： C30B29/403 , C30B25/20 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02661 , Y10T428/24942
摘要： A technique for suppressing the bowing of an epitaxial wafer is provided. The epitaxial wafer is prepared by successively epitaxially growing a target group III-nitride layer, an interlayer and another group III-nitride layer on a substrate with a buffer layer. The interlayer is mainly composed of a mixed crystal of GaN and InN expressed in a general formula (GaxIny)N (0≦x≦1, 0≦y≦1, x+y=1) (or a crystal of GaN), and does not contain Al. The interlayer is epitaxially formed at a lower growth temperature than those of the group III-nitride layers, more specifically at a temperature in a range of at least 350° C. to not more than 1000° C.
摘要翻译：提供了抑制外延晶片弯曲的技术。通过在具有缓冲层的衬底上连续外延生长目标III族氮化物层，中间层和另一III族氮化物层来制备外延晶片。中间层主要由通式（GaxIny）N（0 <= x <= 1,0 <= y <= 1，x + y = 1）表示的GaN和InN的混合晶体（或 GaN），不含Al。中间层在比III族氮化物层低的生长温度下外延形成，更具体地在至少350℃至不超过1000℃的温度下外延形成。

2. 发明授权

US07135347B2 Method for manufacturing nitride film including high-resistivity GaN layer and epitaxial substrate manufactured by the method 有权
标题翻译：用于制造包括通过该方法制造的高电阻率GaN层和外延衬底的氮化物膜的方法
公开(公告)号：US07135347B2
公开(公告)日：2006-11-14
申请号：US10873767
申请日：2004-06-22
申请人： Makoto Miyoshi , Masahiro Sakai , Mitsuhiro Tanaka , Takashi Egawa , Hiroyasu Ishikawa
发明人： Makoto Miyoshi , Masahiro Sakai , Mitsuhiro Tanaka , Takashi Egawa , Hiroyasu Ishikawa
IPC分类号： H01L21/00
CPC分类号： C30B29/40 , C30B25/02 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262
摘要： A method for manufacturing a nitride film including a high-resistivity GaN layer includes a step of allowing a Group-III source gas containing an organic metal compound, a Group-V source gas containing ammonia, a carrier gas for the Group-III source gas, and a carrier gas for the Group-V source gas to flow over a predetermined monocrystalline wafer maintained at 1,000° C. or more and also includes a step of epitaxially growing a nitride film, including a GaN layer, on the monocrystalline wafer by a vapor phase reaction of the source gases. At least one of the carrier gases contains nitrogen while the wafer temperature is being increased before the reaction is carried out. At least one of the carrier gases contains hydrogen and nitrogen and has a total hydrogen and nitrogen content of 90 percent by volume or more in at least one part of the epitaxially growing step.
摘要翻译：制造包括高电阻率GaN层的氮化物膜的方法包括以下步骤：允许含有有机金属化合物的III族源气体，含有氨的V族气体，用于III族源气体的载气，并且用于V族源气体的载气在保持在1000℃或更高的预定单晶晶片上流动，并且还包括在单晶晶片上外延生长包括GaN层的氮化物膜的步骤源气体的气相反应。在反应进行之前，至少一种载气含有氮，同时晶片温度升高。至少一种载气含有氢和氮，并且在外延生长步骤的至少一部分中，总氢和氮的总含量为90体积％以上。

3. 发明授权

US07825417B2 Epitaxial wafers, method for manufacturing of epitaxial wafers, method of suppressing bowing of these epitaxial wafers and semiconductor multilayer structures using these epitaxial wafers 有权
标题翻译：外延晶片，外延晶片的制造方法，使用这些外延晶片抑制这些外延晶片的弯曲的方法和半导体多层结构
公开(公告)号：US07825417B2
公开(公告)日：2010-11-02
申请号：US12193811
申请日：2008-08-19
申请人： Masahiro Sakai , Mitsuhiro Tanaka , Takashi Egawa
发明人： Masahiro Sakai , Mitsuhiro Tanaka , Takashi Egawa
IPC分类号： H01L27/15 , H01L21/00
CPC分类号： C30B29/403 , C30B25/20 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02661 , Y10T428/24942
摘要： A technique for suppressing the bowing of an epitaxial wafer is provided. The epitaxial wafer is prepared by successively epitaxially growing a target group III-nitride layer, an interlayer and another group III-nitride layer on a substrate with a buffer layer. The interlayer is mainly composed of a mixed crystal of GaN and InN expressed in a general formula (GaxIny)N (0≦x≦1, 0≦y≦1, x+y=1) (or a crystal of GaN), and does not contain Al. The interlayer is epitaxially formed at a lower growth temperature than those of the group III-nitride layers, more specifically at a temperature in a range of at least 350° C. to not more than 1000° C.
摘要翻译：提供了抑制外延晶片弯曲的技术。通过在具有缓冲层的衬底上连续外延生长目标III族氮化物层，中间层和另一III族氮化物层来制备外延晶片。中间层主要由通式（GaxIny）N（0＆nlE; x＆nlE; 1,0

4. 发明授权

US07479658B2 Epitaxial wafers, method for manufacturing of epitaxial wafers, method of suppressing bowing of these epitaxial wafers and semiconductor multilayer structures using these epitaxial wafers 有权
标题翻译：外延晶片，外延晶片的制造方法，使用这些外延晶片抑制这些外延晶片的弯曲的方法和半导体多层结构
公开(公告)号：US07479658B2
公开(公告)日：2009-01-20
申请号：US10909477
申请日：2004-08-02
申请人： Masahiro Sakai , Mitsuhiro Tanaka , Takashi Egawa
发明人： Masahiro Sakai , Mitsuhiro Tanaka , Takashi Egawa
IPC分类号： H01L27/15 , H01L21/00
CPC分类号： C30B29/403 , C30B25/20 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02661 , Y10T428/24942
摘要： A technique for suppressing the bowing of an epitaxial wafer is provided. The epitaxial wafer is prepared by successively epitaxially growing a target group III-nitride layer, an interlayer and another group III-nitride layer on a substrate with a buffer layer. The interlayer is mainly composed of a mixed crystal of GaN and InN expressed in a general formula (GaxIny)N (0≦x≦1, 0≦y≦1, x+y=1) (or a crystal of GaN), and does not contain Al. The interlayer is epitaxially formed at a lower growth temperature than those of the group III-nitride layers, more specifically at a temperature in a range of at least 350° C. to not more than 1000° C.
摘要翻译：提供了抑制外延晶片弯曲的技术。通过在具有缓冲层的衬底上连续外延生长目标III族氮化物层，中间层和另一III族氮化物层来制备外延晶片。中间层主要由通式（GaxIny）N（0 <= x <= 1,0 <= y <= 1，x + y = 1）表示的GaN和InN的混合晶体（或 GaN），不含Al。中间层在比III族氮化物层低的生长温度下外延形成，更具体地在至少350℃至不超过1000℃的温度下外延形成。

5. 发明申请

US20050028888A1 Epitaxial wafers, method for manufacturing of epitaxial wafers, method of suppressing bowing of these epitaxial wafers and semiconductor multilayer structures using these epitaxial wafers 有权
标题翻译：外延晶片，外延晶片的制造方法，使用这些外延晶片抑制这些外延晶片的弯曲的方法和半导体多层结构
公开(公告)号：US20050028888A1
公开(公告)日：2005-02-10
申请号：US10909477
申请日：2004-08-02
申请人： Masahiro Sakai , Mitsuhiro Tanaka , Takashi Egawa
发明人： Masahiro Sakai , Mitsuhiro Tanaka , Takashi Egawa
IPC分类号： C30B25/20 , C30B29/40 , H01L21/205 , H01L33/12 , H01L33/32 , H01L29/00 , C30B1/00 , H01L21/00
CPC分类号： C30B29/403 , C30B25/20 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02661 , Y10T428/24942
摘要： A technique for suppressing bowing of an epitaxial wafer is provided. The epitaxial wafer is prepared by successively epitaxially growing a target group III-nitride layer, an interlayer and another group III-nitride layer on a substrate with a buffer layer. The interlayer, mainly composed of a mixed crystal of GaN and InN expressed in a general formula (GaxIny)N (0≦x≦1, 0≦y≦1, x+y=1) (or a crystal of GaN), does not contains Al. The interlayer is epitaxially formed at a growth temperature lower than those of the group III-nitride layers, more specifically at a temperature of at least 350° C. and not more than 1000° C.
摘要翻译：提供了一种用于抑制外延晶片弯曲的技术。通过在具有缓冲层的衬底上连续外延生长目标III族氮化物层，中间层和另一III族氮化物层来制备外延晶片。主要由通式（GaxIny）N（0≤x≤1,0<= y <= 1，x + y = 1）表示的GaN和InN的混合晶体（或者由 GaN），不含有Al。中间层在比III族氮化物层低的生长温度下外延形成，更具体地在至少350℃和不高于1000℃的温度下外延形成。

6. 发明申请

US20050009221A1 Method for manufacturing nitride film including high-resistivity GaN layer and epitaxial substrate manufactured by the method 有权
标题翻译：用于制造包括通过该方法制造的高电阻率GaN层和外延衬底的氮化物膜的方法
公开(公告)号：US20050009221A1
公开(公告)日：2005-01-13
申请号：US10873767
申请日：2004-06-22
申请人： Makoto Miyoshi , Masahiro Sakai , Mitsuhiro Tanaka , Takashi Egawa , Hiroyasu Ishikawa
发明人： Makoto Miyoshi , Masahiro Sakai , Mitsuhiro Tanaka , Takashi Egawa , Hiroyasu Ishikawa
IPC分类号： C30B29/38 , C23C16/34 , C30B25/02 , C30B29/40 , H01L21/00 , H01L21/20 , H01L21/205
CPC分类号： C30B29/40 , C30B25/02 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262
摘要： A method for manufacturing a nitride film including a high-resistivity GaN layer includes a step of allowing a Group-III source gas containing an organic metal compound, a Group-V source gas containing ammonia, a carrier gas for the Group-III source gas, and a carrier gas for the Group-V source gas to flow over a predetermined monocrystalline wafer maintained at 1,000° C. or more and also includes a step of epitaxially growing a nitride film, including a GaN layer, on the monocrystalline wafer by a vapor phase reaction of the source gases. At least one of the carrier gases contains nitrogen while the wafer temperature is being increased before the reaction is carried out. At least one of the carrier gases contains hydrogen and nitrogen and has a total hydrogen and nitrogen content of 90 percent by volume or more in at least one part of the epitaxially growing step.
摘要翻译：制造包括高电阻率GaN层的氮化物膜的方法包括以下步骤：允许含有有机金属化合物的III族源气体，含有氨的V族气体，用于III族源气体的载气，并且用于V族源气体的载气在保持在1000℃或更高的预定单晶晶片上流动，并且还包括在单晶晶片上外延生长包括GaN层的氮化物膜的步骤源气体的气相反应。在反应进行之前，至少一种载气含有氮，同时晶片温度升高。至少一种载气含有氢和氮，并且在外延生长步骤的至少一部分中，总氢和氮的总含量为90体积％以上。

7. 发明授权

US08803389B2 Stator and motor provided with the stator 有权
标题翻译：定子和电机配有定子
公开(公告)号：US08803389B2
公开(公告)日：2014-08-12
申请号：US12975593
申请日：2010-12-22
申请人： Tatsuhiko Mizutani , Masahiro Sakai
发明人： Tatsuhiko Mizutani , Masahiro Sakai
IPC分类号： H02K1/06 , H02K5/24 , H02K5/04 , H02K1/18 , H02K1/16 , H02K3/52
CPC分类号： H02K1/18 , H02K1/16 , H02K1/185 , H02K3/522 , H02K5/04 , H02K5/24
摘要： A stator includes a stator core formed from a plurality of split cores arranged in a circumferential direction, and a cylindrical body that surrounds the stator core from a periphery and secures the stator core. The split cores each have a first end portion on one end in the circumferential direction, and a second end portion on the other end in the circumferential direction. The first end portion has a protruding portion that protrudes outward in the circumferential direction, and the second end portion has a depressed portion that is depressed inward in the circumferential direction and fits together with the protruding portion of the first end portion of an adjacent split core.
摘要翻译：定子包括由沿圆周方向排列的多个分裂铁心形成的定子铁芯和从外周围绕定子铁心并固定定子铁芯的圆筒体。分开的芯分别在圆周方向上的一端具有第一端部，在圆周方向上具有另一端的第二端部。第一端部具有沿圆周方向向外突出的突出部分，并且第二端部具有在圆周方向上向内凹陷的凹陷部分，并与相邻分割芯部的第一端部的突出部分配合在一起。

8. 发明授权

US08584093B2 Pre-condition generation device, post-condition generation device, and method for generating these conditions 失效
标题翻译：前提条件生成装置，后置条件生成装置以及用于产生这些条件的方法
公开(公告)号：US08584093B2
公开(公告)日：2013-11-12
申请号：US12721749
申请日：2010-03-11
申请人： Masahiro Sakai , Takeo Imai
发明人： Masahiro Sakai , Takeo Imai
IPC分类号： G06F9/44 , G06F11/00
CPC分类号： G06F8/313
摘要： A device includes: a storage storing second logical expressions; an storage storing an essential condition which indicates a set of one or more second logical expressions selected such that a proposition is not satisfied that the post-condition is satisfied immediately after a program is executed when a logical product of other second logical expressions obtained by excluding the set indicated by the essential condition from the storage is satisfied; a generator generating a candidate condition represented by a logical product of one or more second logical expressions to include a common second logical expression with the set indicated by the essential condition; a judging unit judging whether satisfied is a proposition that the post-condition is satisfied immediately after the program is executed when the candidate condition is satisfied, and an output unit configured to output the candidate condition determined to satisfy the proposition as representing a pre-condition of the program.
摘要翻译：一种设备包括：存储第二逻辑表达式的存储器; 存储存储指示选择的一个或多个第二逻辑表达的集合的必要条件，使得命题不满足在执行程序之后立即满足后续条件，当通过排除获得的其他第二逻辑表达式的逻辑积满足存放条件的要求; 生成由一个或多个第二逻辑表达式的逻辑积表示的候选条件，以包括与基本条件指示的集合的公共第二逻辑表达式; 判断单元判断满足是当满足候选条件时在执行程序之后立即满足后置条件的命题，以及输出单元，被配置为将确定为满足命题的候选条件输出为表示前置条件的程序。

9. 发明授权

US08317563B2 Method for producing plasma display panel 失效
标题翻译：等离子体显示面板的制造方法
公开(公告)号：US08317563B2
公开(公告)日：2012-11-27
申请号：US13063174
申请日：2010-05-18
申请人： Yasuhiro Yamauchi , Masahiro Sakai , Yusuke Fukui , Keisuke Okada
发明人： Yasuhiro Yamauchi , Masahiro Sakai , Yusuke Fukui , Keisuke Okada
IPC分类号： H01J9/20 , H01J9/26
CPC分类号： H01J9/241 , H01J9/261 , H01J9/39 , H01J11/12 , H01J11/52 , H01J2211/40
摘要： Provided is a manufacturing method that allows even a PDP having high-definition cells to exhibit excellent image display performance with reduced power consumption by effectively preventing impurities from adhering to the protective layer. Specifically, in a pre-baking step, a back substrate 9 is baked at a pre-baking temperature. Here, a highest pre-baking temperature is set to be lower than a softening point of a sealing material. The back substrate 9 is superposed on a front substrate 2. Then, a sealing step is performed in a sealing atmosphere prepared by mixing a predetermined amount of a reducing gas with a non-oxidizing gas. The above enables the impurities attributed to organic components due to a sealing material paste to remain as low molecular components, whereby the impurities are evacuated and removed in an evacuating step performed after the sealing step. This prevents adherence of the impurities to the protective layer 8.
摘要翻译：提供一种制造方法，即使通过有效地防止杂质附着在保护层上，即使具有高分辨率单元的PDP也能够以降低的功耗来显示优异的图像显示性能。具体地，在预烘烤步骤中，在预烘烤温度下烘烤后基板9。这里，最高的预烘烤温度被设定为低于密封材料的软化点。背面基板9叠置在前基板2上。然后，在通过将预定量的还原气体与非氧化性气体混合而制备的密封气氛中进行密封步骤。以上使得由于密封材料糊而导致的有机成分的杂质保持为低分子成分，由此在密封工序后进行抽真空工序中将杂质抽真空除去。这防止杂质粘附到保护层8上。

10. 发明授权

US08142684B2 Method of manufacturing blue silicate phosphor, and blue silicate phosphor and light-emitting device 有权
标题翻译：制造蓝色硅酸盐荧光体的方法，以及蓝色硅酸盐荧光体和发光装置
公开(公告)号：US08142684B2
公开(公告)日：2012-03-27
申请号：US12299868
申请日：2007-05-16
申请人： Seigo Shiraishi , Kojiro Okuyama , Masahiro Sakai , Takehiro Zukawa
发明人： Seigo Shiraishi , Kojiro Okuyama , Masahiro Sakai , Takehiro Zukawa
IPC分类号： C09K11/08
CPC分类号： C09K11/7734 , C09K11/595 , C09K11/7774 , C09K11/778 , C09K11/7784 , C09K11/7797
摘要： The present invention provides a method of manufacturing a blue silicate phosphor having high luminance and a chromaticity y comparable to or lower than that of BAM:Eu. The present invention is a method of manufacturing a blue silicate phosphor represented by the general formula aAO.bEuO.(Mg1−w,Znw)O.cSiO2.dCaCl2, where A is at least one selected from Sr, Ba and Ca, and 2.970≦a≦3.500, 0.006≦b≦0.030, 1.900≦c≦2.100, 0≦d≦0.05, and 0≦w≦1 are satisfied. In this manufacturing method, heat treatment is carried out in a gas atmosphere having an oxygen partial pressure of 1×10−15.5 atm to 1×10−10 atm at a temperature of 1200° C. to 1400° C.
摘要翻译：本发明提供一种制造与BAM：Eu相当或更低的亮度和色度y的蓝色硅酸盐荧光体的方法。本发明是制造由通式aAO.bEuO（Mg1-w，Znw）O.cSiO2.dCaCl2表示的蓝色硅酸盐荧光体的方法，其中A为选自Sr，Ba和Ca中的至少一种，2.970 ＆nlE; a＆nlE; 3.500,0.006＆nlE; b＆nlE; 0.030，1.900＆nlE; c＆nlE; 2.100,0＆nlE; d＆nlE; 0.05和0＆nlE; w＆nlE; 1。在该制造方法中，在1200℃〜1400℃的温度下，在氧分压为1×10-15.5atm〜1×10-10atm的气氛中进行热处理。

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