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1. 发明授权

US06888182B2 Thin film transistor, method for manufacturing same, and liquid crystal display device using same 有权
标题翻译：薄膜晶体管及其制造方法以及使用该薄膜晶体管的液晶显示装置
公开(公告)号：US06888182B2
公开(公告)日：2005-05-03
申请号：US10389802
申请日：2003-03-18
申请人： Masahiro Mitani , Yasumori Fukushima
发明人： Masahiro Mitani , Yasumori Fukushima
IPC分类号： H01L21/336 , H01L29/786 , H01L27/148
CPC分类号： H01L29/78696 , H01L29/66757 , H01L29/66772 , H01L29/78621 , H01L29/78627 , H01L2029/7863
摘要： A thin film transistor of the present invention is provided with (i) a plurality of divided channel regions formed under a gate electrode, and (ii) divided source regions and divided drain regions between which each of the divided channel regions is sandwiched, the divided source regions being connected with one another, and the divided drain regions being connected with one another. Here, the divided channel regions are so arranged that a spacing between the divided channel regions is smaller than a channel divided width which is a width of one divided channel region, the channel divided width is not more than 50 μm, and the spacing is not less than 3 μm. With this arrangement, it is possible to provide a thin film transistor capable of obtaining reliability with reducing the variation in threshold voltage by reducing the self-heating at the channel regions, as well as capable of reducing the increase of a layout area.
摘要翻译：本发明的薄膜晶体管具备：（i）形成在栅电极下方的多个分割沟道区，（ii）被分割的源极区域和分割的漏极区域，各分割沟道区域夹在其间，源极区域彼此连接，并且分割的漏极区域彼此连接。这里，分割的沟道区域被布置成使得分隔沟道区域之间的间隔小于作为一个分割沟道区域的宽度的沟道分割宽度，沟道分割宽度不大于50μm，并且间隔不是少于3个妈妈。利用这种布置，可以提供一种薄膜晶体管，其能够通过减小沟道区域的自发热以及能够减小布局面积的增加而降低阈值电压的变化而获得可靠性。

2. 发明授权

US08946820B2 Method for manufacturing semiconductor substrate, substrate for forming semiconductor substrate, stacked substrate, semiconductor substrate, and electronic device 有权
标题翻译：用于制造半导体衬底的方法，用于形成半导体衬底的衬底，层叠衬底，半导体衬底和电子器件
公开(公告)号：US08946820B2
公开(公告)日：2015-02-03
申请号：US14117158
申请日：2012-06-26
申请人： Masahiro Mitani
发明人： Masahiro Mitani
IPC分类号： H01L27/12 , H01L21/46 , H01L21/762 , H01L29/16 , H01L29/786
CPC分类号： H01L21/76254 , H01L27/1266 , H01L29/16 , H01L29/78654
摘要： Film thickness variations are prevented in a plurality of single crystal semiconductor films separated at a fragile layer reliably and transferred to a base substrate. A method for manufacturing a SOI substrate (33) in which a plurality of SOI layers (15) are disposed on a base substrate (30) includes the steps of bonding a plurality of SOI wafers (10), in which an oxide film (14), a SOI layer (15), a BOX layer (12), and a Si support substrate (13) having a fragile layer (17) formed by ion irradiation in the inside and being made from a single crystal semiconductor material are stacked sequentially, to a base substrate (30) in such a way that the oxide film (14) is located on the side close to the base substrate (30), applying heat to the plurality of SOI wafers (10) to separate part of the Si support substrate (13) at the fragile layer (17) and transfer the oxide film (14), the SOI layer (15), the BOX layer (12), and a single crystal Si layer (18) which is part of the Si support substrate (13) to the base substrate (30), and subjecting the base substrate (30) to an etch back treatment to expose the BOX layer (12) by etching the transferred single crystal Si layer (18).
摘要翻译：在易碎层分离的多个单晶半导体膜中，可以防止膜厚变化，并将其转印到基底。在基底（30）上设置多个SOI层（15）的SOI衬底（33）的制造方法包括将多个SOI晶片（10）接合的工序，其中，氧化膜（14）），顺序地层叠具有通过离子照射在内部并由单晶半导体材料制成的脆性层（17）的SOI层（15），BOX层（12）和Si支撑基板（13）以使得氧化膜（14）位于靠近基底（30）的一侧的方式施加到基底（30），向多个SOI晶片（10）施加热量以分离部分Si 在所述脆弱层（17）处的支撑基板（13），并且将所述氧化物膜（14），所述SOI层（15），所述BOX层（12）和作为所述Si的一部分的单晶Si层（18）支撑基板（13）到基底基板（30），并且对基底基板（30）进行回蚀处理，以通过蚀刻转移的单个Cr来暴露BOX层（12） ystal Si层（18）。

3. 发明申请

US20090218943A1 DISPLAY DEVICE AND ELECTRONIC EQUIPMENT 审中-公开
标题翻译：显示设备和电子设备
公开(公告)号：US20090218943A1
公开(公告)日：2009-09-03
申请号：US12372844
申请日：2009-02-18
申请人： Teiichiro Nishimura , Kaoru Abe , Reo Asaki , Masahiro Mitani
发明人： Teiichiro Nishimura , Kaoru Abe , Reo Asaki , Masahiro Mitani
IPC分类号： G02B5/00 , H01J1/62
CPC分类号： H01L51/5275 , H01L27/3211 , H01L27/3244 , H01L51/5246 , H01L51/5253 , H01L51/5265 , H01L2251/5315
摘要： A display device includes: a display area having a resonator structure for resonating produced light; a protective film formed to cover the display area; a resin layer formed on the protective film; and a sealing layer attached by the resin layer, wherein the protective film includes a single silicon nitride layer, and has a refractive index between 1.65 and 1.75 at a wavelength of nm.
摘要翻译：显示装置包括：具有用于谐振产生的光的谐振器结构的显示区域; 形成为覆盖显示区域的保护膜; 形成在保护膜上的树脂层; 以及由树脂层附着的密封层，其中保护膜包括单个氮化硅层，并且在波长为nm的折射率为1.65和1.75之间。

4. 发明授权

US5955557A Branched ethylenic macromonomer and its polymer 失效
标题翻译：分支乙烯大分子单体及其聚合物
公开(公告)号：US5955557A
公开(公告)日：1999-09-21
申请号：US632475
申请日：1996-04-26
申请人： Shuji Machida , Masahiro Mitani , Masami Watanabe , Nobuhiro Yabunouchi
发明人： Shuji Machida , Masahiro Mitani , Masami Watanabe , Nobuhiro Yabunouchi
IPC分类号： C08F4/659 , C08F4/6592 , C08F8/04 , C08F10/00 , C08F10/02 , C08F110/02 , C08F210/02 , C08F210/16 , C08F10/14
CPC分类号： C08F10/02 , C08F10/00 , C08F8/04 , C08F110/02 , C08F210/02 , C08F210/16 , C08F4/65912 , C08F4/6592 , Y10S526/943
摘要： A copolymer having the excellent molding and working properties obtainable by using a branched ethylenic macromonomer and a comonomer selected from the group consisting of ethylene, an .alpha.-olefin having 3 to 20 carbon atoms, cyclic olefins and styrenes. The branched ethylenic macromonomer of the present invention is derivable from ethylene singly or derivable from ethylene and another olefin, (a) a molar ratio of a terminal methyl group/a vinyl group in the macromonomer being in the range of 1 to 100, the macromonomer having a branch other than the branch directly derived from the other olefin, (b) a ratio of vinyl groups to the total unsaturated groups in the macromonomer being 70 mol % or more, (c) a weight-average molecular weight of the macromonomer in terms of a polyethylene measured by a GPC being in the range of 100 to 20,000.
摘要翻译： PCT No.PCT / JP94 / 01792 Sec。 371日期：1996年04月28日 102（e）日期1996年4月28日PCT 1994年10月26日PCT公布。公开号WO95 / 11931 日期：1993年10月26日具有通过使用支化乙烯性大分子单体和选自乙烯，碳原子数3〜20的α-烯烃，环状烯烃和苯乙烯的共聚单体得到的优异的成型性和工作性的共聚物。本发明的支链乙烯性大分子单体可单独衍生自乙烯或可衍生自乙烯和另一种烯烃的乙烯基，（a）大分子单体中的末端甲基/乙烯基的摩尔比在1〜100的范围内，大分子单体具有直接衍生自其它烯烃的分支以外的分支，（b）大分子单体中乙烯基与总不饱和基团的比例为70摩尔％以上，（c）大分子单体的重均分子量通过GPC测量的聚乙烯的用量在100至20,000的范围内。

5. 发明申请

US20140183636A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, SUBSTRATE FOR FORMING SEMICONDUCTOR SUBSTRATE, STACKED SUBSTRATE, SEMICONDUCTOR SUBSTRATE, AND ELECTRONIC DEVICE 有权
标题翻译：用于制造半导体衬底的方法，用于形成半导体衬底的衬底，堆叠衬底，半导体衬底和电子器件
公开(公告)号：US20140183636A1
公开(公告)日：2014-07-03
申请号：US14117158
申请日：2012-06-26
申请人： Masahiro Mitani
发明人： Masahiro Mitani
IPC分类号： H01L21/762 , H01L29/16 , H01L29/786
CPC分类号： H01L21/76254 , H01L27/1266 , H01L29/16 , H01L29/78654
摘要： Film thickness variations are prevented in a plurality of single crystal semiconductor films separated at a fragile layer reliably and transferred to a base substrate. A method for manufacturing a SOI substrate (33) in which a plurality of SOI layers (15) are disposed on a base substrate (30) includes the steps of bonding a plurality of SOI wafers (10), in which an oxide film (14), a SOI layer (15), a BOX layer (12), and a Si support substrate (13) having a fragile layer (17) formed by ion irradiation in the inside and being made from a single crystal semiconductor material are stacked sequentially, to a base substrate (30) in such a way that the oxide film (14) is located on the side close to the base substrate (30), applying heat to the plurality of SOI wafers (10) to separate part of the Si support substrate (13) at the fragile layer (17) and transfer the oxide film (14), the SOI layer (15), the BOX layer (12), and a single crystal Si layer (18) which is part of the Si support substrate (13) to the base substrate (30), and subjecting the base substrate (30) to an etch back treatment to expose the BOX layer (12) by etching the transferred single crystal Si layer (18).
摘要翻译：在易碎层分离的多个单晶半导体膜中，可以防止膜厚变化，并将其转印到基底。在基底（30）上设置多个SOI层（15）的SOI衬底（33）的制造方法包括将多个SOI晶片（10）接合的工序，其中，氧化膜（14）），顺序地层叠具有通过离子照射在内部并由单晶半导体材料制成的脆性层（17）的SOI层（15），BOX层（12）和Si支撑基板（13）以使得氧化膜（14）位于靠近基底（30）的一侧的方式施加到基底（30），向多个SOI晶片（10）施加热量以分离部分Si 在所述脆弱层（17）处的支撑基板（13），并且将所述氧化物膜（14），所述SOI层（15），所述BOX层（12）和作为所述Si的一部分的单晶Si层（18）支撑基板（13）到基底基板（30），并且对基底基板（30）进行回蚀处理，以通过蚀刻转移的单个Cr来暴露BOX层（12） ystal Si层（18）。

6. 发明申请

US20130221481A1 SEMICONDUCTOR SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE, THIN FILM TRANSISTOR, SEMICONDUCTOR CIRCUIT, LIQUID CRYSTAL DISPLAY APPARATUS, ELECTROLUMINESCENCE APPARATUS, WIRELESS COMMUNICATION APPARATUS, AND LIGHT EMITTING APPARATUS 有权
标题翻译：半导体基板，制造半导体基板的方法，薄膜晶体管，半导体电路，液晶显示装置，电致发光器件，无线通信装置和发光装置
公开(公告)号：US20130221481A1
公开(公告)日：2013-08-29
申请号：US13882582
申请日：2011-11-02
申请人： Masahiro Mitani
发明人： Masahiro Mitani
IPC分类号： H01L29/16
CPC分类号： H01L29/16 , H01L27/1266
摘要： A semiconductor substrate (41) includes an insulating substrate (30), a plurality of semiconductor thin films (46) which are arranged on the insulating substrate (30) to be separated from each other, and a conductive film (33) which is arranged between the semiconductor thin films (46). Therefore, it is possible to uniformly thin the film thickness of each of the semiconductor thin films.
摘要翻译：半导体衬底（41）包括绝缘衬底（30），布置在绝缘衬底（30）上以彼此分离的多个半导体薄膜（46）和布置在其上的导电膜（33）在半导体薄膜（46）之间。因此，能够使各半导体薄膜的膜厚均匀化。

7. 发明申请

US20100321845A1 OVERHEAT PROTECTION CIRCUIT AND POWER SUPPLY INTEGRATED CIRCUIT 有权
标题翻译：超声波保护电路和电源集成电路
公开(公告)号：US20100321845A1
公开(公告)日：2010-12-23
申请号：US12790070
申请日：2010-05-28
申请人： Takashi Imura , Takao Nakashimo , Masakazu Sugiura , Atsushi Igarashi , Masahiro Mitani
发明人： Takashi Imura , Takao Nakashimo , Masakazu Sugiura , Atsushi Igarashi , Masahiro Mitani
IPC分类号： H02H5/04
CPC分类号： G05F1/569
摘要： Provided is a power supply integrated circuit including an overheat protection circuit with high detection accuracy. The overheat protection circuit includes: a current generation circuit including: a first metal oxide semiconductor (MOS) transistor including a gate terminal and a drain terminal that are connected to each other, the first MOS transistor operating in a weak inversion region; a second MOS transistor including a gate terminal connected to the gate terminal of the first MOS transistor, the second MOS transistor having the same conductivity type as the first MOS transistor and operating in a weak inversion region; and a first resistive element connected to a source terminal of the second MOS transistor; and a comparator for comparing a reference voltage having positive temperature characteristics and a temperature voltage having negative temperature characteristics, which are obtained based on a current generated by the current generation circuit.
摘要翻译：提供了一种具有高检测精度的过热保护电路的电源集成电路。过热保护电路包括：电流产生电路，包括：第一金属氧化物半导体（MOS）晶体管，其包括彼此连接的栅极端子和漏极端子，所述第一MOS晶体管在弱反转区域中工作; 第二MOS晶体管，包括连接到第一MOS晶体管的栅极端子的栅极端子，第二MOS晶体管具有与第一MOS晶体管相同的导电类型并且在弱反转区域中操作; 以及连接到所述第二MOS晶体管的源极端子的第一电阻元件; 以及比较器，用于比较具有正温度特性的参考电压和具有负温度特性的温度电压，其基于由电流产生电路产生的电流获得。

8. 发明授权

US08685837B2 Transfer method, method for manufacturing semiconductor device, and semiconductor device 有权
标题翻译：转移方法，制造半导体器件的方法和半导体器件
公开(公告)号：US08685837B2
公开(公告)日：2014-04-01
申请号：US13575158
申请日：2011-01-17
申请人： Masahiro Mitani
发明人： Masahiro Mitani
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L27/1266 , H01L21/2007 , H01L21/78
摘要： After depressed portions (4) have been formed in advance in that surface of a Si substrate (1) on which Si single films (8) are to be formed, that surface of the Si substrate (1) on which the Si single films are to be formed and an intermediate substrate (5) are bonded together, and elements are separated from each other by grinding the Si substrate (1) from the bottom wall side of the depressed portions (4).
摘要翻译：在要形成Si单膜（8）的Si衬底（1）的表面预先形成凹陷部分（4）之后，其中Si单层膜的Si衬底（1）的表面是并且将中间基板（5）接合在一起，并且通过从凹部（4）的底壁侧研磨Si基板（1）而将元件彼此分离。

9. 发明申请

US20120299147A1 TRANSFER METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE 有权
标题翻译：转移方法，制造半导体器件的方法和半导体器件
公开(公告)号：US20120299147A1
公开(公告)日：2012-11-29
申请号：US13575158
申请日：2011-01-17
申请人： Masahiro Mitani
发明人： Masahiro Mitani
IPC分类号： H01L21/762 , H01L27/12
CPC分类号： H01L27/1266 , H01L21/2007 , H01L21/78
摘要： After depressed portions (4) have been formed in advance in that surface of a Si substrate (1) on which Si single films (8) are to be formed, that surface of the Si substrate (1) on which the Si single films are to be formed and an intermediate substrate (5) are bonded together, and elements are separated from each other by grinding the Si substrate (1) from the bottom wall side of the depressed portions (4).
摘要翻译：在要形成Si单膜（8）的Si衬底（1）的表面预先形成凹陷部分（4）之后，其中Si单层膜的Si衬底（1）的表面是并且将中间基板（5）接合在一起，并且通过从凹部（4）的底壁侧研磨Si基板（1）而将元件彼此分离。

10. 发明申请

US20120182062A1 TEMPERATURE SENSOR DEVICE 有权
标题翻译：温度传感器装置
公开(公告)号：US20120182062A1
公开(公告)日：2012-07-19
申请号：US13345064
申请日：2012-01-06
申请人： Masakazu Sugiura , Atsushi Igarashi , Masahiro Mitani
发明人： Masakazu Sugiura , Atsushi Igarashi , Masahiro Mitani
IPC分类号： H03K3/011
CPC分类号： G01K7/01
摘要： Provided is a temperature sensor device operable at a lower voltage. The temperature sensor device detects temperature based on an output voltage of a forward voltage generator for generating a forward voltage of a PN junction. The forward voltage generator includes a level shift voltage generation circuit, and an output voltage of the temperature sensor device is given based on the forward voltage of the PN junction and a voltage of the level shift voltage generation circuit.
摘要翻译：提供了可在较低电压下操作的温度传感器装置。温度传感器装置基于用于产生PN结的正向电压的正向电压发生器的输出电压来检测温度。正向电压发生器包括电平转换电压产生电路，并且基于PN结的正向电压和电平转换电压产生电路的电压来给出温度传感器装置的输出电压。

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