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1. 发明授权

US08860862B2 Solid-state image pickup apparatus, and image pickup system using solid-state image pickup apparatus 有权
标题翻译：固态图像拾取装置和使用固态图像拾取装置的图像拾取系统
公开(公告)号：US08860862B2
公开(公告)日：2014-10-14
申请号：US13473442
申请日：2012-05-16
申请人： Masahiro Kobayashi , Yuichiro Yamashita , Yusuke Onuki
发明人： Masahiro Kobayashi , Yuichiro Yamashita , Yusuke Onuki
IPC分类号： H04N3/14 , H04N9/04 , H01L27/146
CPC分类号： H01L27/14623 , H01L27/14603 , H01L27/14609 , H01L27/14612 , H01L27/14614 , H01L27/14643 , H04N5/374
摘要： A solid-state image pickup apparatus includes a photoelectric conversion unit, a charge storage unit, and a floating diffusion unit, all disposed on a semiconductor substrate. The solid-state image pickup apparatus further includes a first gate electrode disposed on the semiconductor substrate and extending between the photoelectric conversion unit and charge storage unit, and a second gate electrode disposed on the semiconductor substrate and extending between the charge storage unit and the floating diffusion unit. The solid-state image pickup apparatus further includes a light shielding member including a first part and a second part, wherein the first part is disposed over the charge storage unit and at least over the first gate electrode or the second gate electrode, and the second part is disposed between the first gate electrode and the second gate electrode such that the second part extends from the first part toward a surface of the semiconductor substrate.
摘要翻译：固态摄像装置包括全部设置在半导体衬底上的光电转换单元，电荷存储单元和浮动扩散单元。固体摄像装置还包括设置在半导体衬底上并在光电转换单元和电荷存储单元之间延伸的第一栅电极，以及设置在半导体衬底上并在电荷存储单元和浮置电极之间延伸的第二栅电极扩散单元固体摄像装置还包括遮光构件，其包括第一部分和第二部分，其中第一部分设置在电荷存储单元上方，并且至少在第一栅电极或第二栅极上，第二部分部分设置在第一栅电极和第二栅电极之间，使得第二部分从第一部分朝向半导体衬底的表面延伸。

2. 发明申请

US20120300106A1 SOLID-STATE IMAGE PICKUP APPARATUS, AND IMAGE PICKUP SYSTEM USING SOLID-STATE IMAGE PICKUP APPARATUS 有权
标题翻译：固态图像拾取装置和使用固态图像拾取装置的图像拾取系统
公开(公告)号：US20120300106A1
公开(公告)日：2012-11-29
申请号：US13473442
申请日：2012-05-16
申请人： Masahiro Kobayashi , Yuichiro Yamashita , Yusuke Onuki
发明人： Masahiro Kobayashi , Yuichiro Yamashita , Yusuke Onuki
IPC分类号： H04N5/335
CPC分类号： H01L27/14623 , H01L27/14603 , H01L27/14609 , H01L27/14612 , H01L27/14614 , H01L27/14643 , H04N5/374
摘要： A solid-state image pickup apparatus includes a photoelectric conversion unit, a charge storage unit, and a floating diffusion unit, all disposed on a semiconductor substrate. The solid-state image pickup apparatus further includes a first gate electrode disposed on the semiconductor substrate and extending between the photoelectric conversion unit and charge storage unit, and a second gate electrode disposed on the semiconductor substrate and extending between the charge storage unit and the floating diffusion unit. The solid-state image pickup apparatus further includes a light shielding member including a first part and a second part, wherein the first part is disposed over the charge storage unit and at least over the first gate electrode or the second gate electrode, and the second part is disposed between the first gate electrode and the second gate electrode such that the second part extends from the first part toward a surface of the semiconductor substrate.
摘要翻译：固态摄像装置包括全部设置在半导体衬底上的光电转换单元，电荷存储单元和浮动扩散单元。固体摄像装置还包括设置在半导体衬底上并在光电转换单元和电荷存储单元之间延伸的第一栅电极，以及设置在半导体衬底上并在电荷存储单元和浮置电极之间延伸的第二栅电极扩散单元固体摄像装置还包括遮光构件，其包括第一部分和第二部分，其中第一部分设置在电荷存储单元上方，并且至少在第一栅电极或第二栅极上，第二部分部分设置在第一栅电极和第二栅电极之间，使得第二部分从第一部分朝向半导体衬底的表面延伸。

3. 发明申请

US20110084316A1 PICKUP DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：拾取装置及其制造方法
公开(公告)号：US20110084316A1
公开(公告)日：2011-04-14
申请号：US12899404
申请日：2010-10-06
申请人： Yuichiro Yamashita , Masahiro Kobayashi , Yusuke Onuki
发明人： Yuichiro Yamashita , Masahiro Kobayashi , Yusuke Onuki
IPC分类号： H01L27/148 , H01L31/18
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14612 , H01L27/14689
摘要： A pickup device according to the present invention includes a photoelectric conversion portion, a charge holding portion configured to include a first semiconductor region, and a transfer portion configured to include a transfer gate electrode that controls a potential between the charge holding portion and a sense node. A second semiconductor region is disposed on a surface of a semiconductor region between the control electrode and the transfer gate electrode. A third semiconductor region is disposed below the second semiconductor region. An impurity concentration of the third semiconductor region is higher than the impurity concentration of the first semiconductor region.
摘要翻译：根据本发明的拾取装置包括光电转换部分，被配置为包括第一半导体区域的电荷保持部分和被配置为包括控制电荷保持部分和感测节点之间的电位的转移栅电极的转移部分。第二半导体区域设置在控制电极和传输栅电极之间的半导体区域的表面上。第三半导体区域设置在第二半导体区域的下方。第三半导体区域的杂质浓度高于第一半导体区域的杂质浓度。

4. 发明授权

US08823125B2 Solid-state image pickup device and method for manufacturing the same 有权
标题翻译：固体摄像装置及其制造方法
公开(公告)号：US08823125B2
公开(公告)日：2014-09-02
申请号：US13500064
申请日：2010-10-06
申请人： Yusuke Onuki , Yuichiro Yamashita , Masahiro Kobayashi
发明人： Yusuke Onuki , Yuichiro Yamashita , Masahiro Kobayashi
IPC分类号： H01L27/146 , H01L31/06 , H01L31/102 , H01L31/062 , H01L31/113
CPC分类号： H01L27/14643 , H01L27/14609 , H01L27/14689
摘要： A solid-state image pickup device includes a photoelectric conversion portion, a charge holding portion configured to include a first-conductivity-type first semiconductor region, and a transfer portion configured to include a transfer gate electrode that controls a potential between the charge holding portion and a sense node. The charge holding portion includes a control electrode. A second-conductivity-type second semiconductor region is disposed on a surface of a semiconductor region between the control electrode and the transfer gate electrode. A first-conductivity-type third semiconductor region is disposed under the second semiconductor region. The third semiconductor region is disposed at a deeper position than the first semiconductor region.
摘要翻译：固体摄像装置包括：光电转换部，电荷保持部，被配置为包括第一导电型第一半导体区;以及转印部，其被配置为包括转印栅极电极，其控制电荷保持部分和感知节点。电荷保持部分包括控制电极。第二导电型第二半导体区域设置在控制电极和传输栅电极之间的半导体区域的表面上。第一导电类型的第三半导体区域设置在第二半导体区域的下方。第三半导体区域设置在比第一半导体区域更深的位置。

5. 发明申请

US20120199934A1 SOLID-STATE IMAGE PICKUP DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：固态图像拾取装置及其制造方法
公开(公告)号：US20120199934A1
公开(公告)日：2012-08-09
申请号：US13500064
申请日：2010-10-06
申请人： Yusuke Onuki , Yuichiro Yamashita , Masahiro Kobayashi
发明人： Yusuke Onuki , Yuichiro Yamashita , Masahiro Kobayashi
IPC分类号： H01L31/0352 , H01L31/18
CPC分类号： H01L27/14643 , H01L27/14609 , H01L27/14689
摘要： A solid-state image pickup device includes a photoelectric conversion portion, a charge holding portion configured to include a first-conductivity-type first semiconductor region, and a transfer portion configured to include a transfer gate electrode that controls a potential between the charge holding portion and a sense node. The charge holding portion includes a control electrode. A second-conductivity-type second semiconductor region is disposed on a surface of a semiconductor region between the control electrode and the transfer gate electrode. A first-conductivity-type third semiconductor region is disposed under the second semiconductor region. The third semiconductor region is disposed at a deeper position than the first semiconductor region.
摘要翻译：固体摄像装置包括：光电转换部，电荷保持部，被配置为包括第一导电型第一半导体区;以及转印部，被配置为包括转印栅极电极，其控制电荷保持部分和感知节点。电荷保持部分包括控制电极。第二导电型第二半导体区域设置在控制电极和传输栅电极之间的半导体区域的表面上。第一导电类型的第三半导体区域设置在第二半导体区域的下方。第三半导体区域设置在比第一半导体区域更深的位置。

6. 发明授权

US09041132B2 Solid-state image pickup device 有权
标题翻译：固态图像拾取装置
公开(公告)号：US09041132B2
公开(公告)日：2015-05-26
申请号：US13500043
申请日：2010-09-29
申请人： Masahiro Kobayashi , Yuichiro Yamashita , Yusuke Onuki
发明人： Masahiro Kobayashi , Yuichiro Yamashita , Yusuke Onuki
IPC分类号： H01L27/14 , H01L27/146 , H04N5/335 , H04N5/359 , H04N5/3745
CPC分类号： H01L27/14806 , H01L27/14603 , H01L27/14609 , H01L27/14612 , H01L27/1463 , H04N5/335 , H04N5/359 , H04N5/37452
摘要： A solid-state image pickup device includes a plurality of pixels, each of the pixels including a photoelectric conversion portion, a charge holding portion, a floating diffusion, and a transfer portion. The pixel also includes a beneath-holding-portion isolation layer and a pixel isolation layer. An end portion on a photoelectric conversion portion side of the pixel isolation layer is away from the photoelectric conversion portion compared to an end portion on a photoelectric conversion portion side of the beneath-holding-portion isolation layer, and an N-type semiconductor region constituting part of the photoelectric conversion portion is disposed under at least part of the beneath-holding-portion isolation layer.
摘要翻译：固体摄像装置包括多个像素，每个像素包括光电转换部分，电荷保持部分，浮动扩散部分和转印部分。像素还包括保持下部分隔离层和像素隔离层。与保持部隔离层的光电转换部分侧的端部相比，像素隔离层的光电转换部分侧的端部远离光电转换部分，并且构成N型半导体区域光电转换部分的一部分设置在下保持部隔离层的至少一部分的下方。

7. 发明申请

US20110007196A1 SOLID-STATE IMAGING APPARATUS 有权
标题翻译：固态成像装置
公开(公告)号：US20110007196A1
公开(公告)日：2011-01-13
申请号：US12933471
申请日：2009-04-30
申请人： Yuichiro Yamashita , Masahiro Kobayashi , Takanori Watanabe , Shinsuke Kojima , Takeshi Ichikawa , Yusuke Onuki
发明人： Yuichiro Yamashita , Masahiro Kobayashi , Takanori Watanabe , Shinsuke Kojima , Takeshi Ichikawa , Yusuke Onuki
IPC分类号： H04N5/335
CPC分类号： H04N5/378 , H01L27/14603 , H01L27/14609 , H01L27/14641 , H01L27/14643 , H04N5/359 , H04N5/37452 , H04N5/37457
摘要： A solid-state imaging apparatus including a plurality of pixels each including: a first holding portion for holding signal carriers from a photoelectric conversion portion; an amplifying portion for amplifying and reading a signal based on the signal carriers generated in the photoelectric conversion portion; and a carrier discharging control portion for discharging charge carriers in the photoelectric conversion portion to an OFD region, and having a carrier path between the photoelectric conversion portion and the first carrier holding portion, in which the solid-state imaging apparatus further includes a second carrier holding portion electrically connected with the first carrier portion in parallel through a first transfer unit, when viewed from an output node of the photoelectric conversion portion, thereby smoothing an movie imaging without causing discontinuous frame while suppressing generation of noise mixing into the charge carrier holding portion.
摘要翻译：一种固态成像装置，包括多个像素，每个像素包括：第一保持部分，用于保持来自光电转换部分的信号载流子; 放大部分，用于基于在光电转换部分中产生的信号载波放大和读取信号; 以及用于将光电转换部分中的载流子放电到OFD区域的载流子放电控制部分，并且在光电转换部分和第一载流子保持部分之间具有载流子路径，其中固态成像装置还包括第二载体保持部分，当从光电转换部分的输出节点观察时，通过第一传送单元并联地与第一载体部分电连接，从而平滑电影成像而不引起不连续帧，同时抑制噪声混合到电荷载体保持部分的产生。

8. 发明授权

US08847346B2 Solid-state image pickup device 有权
标题翻译：固态图像拾取装置
公开(公告)号：US08847346B2
公开(公告)日：2014-09-30
申请号：US13500054
申请日：2010-10-06
申请人： Yusuke Onuki , Yuichiro Yamashita , Masahiro Kobayashi
发明人： Yusuke Onuki , Yuichiro Yamashita , Masahiro Kobayashi
IPC分类号： H01L27/146 , H01L31/06 , H01L31/102 , H01L31/062 , H01L31/113
CPC分类号： H01L27/14643 , H01L27/14609
摘要： A photoelectric conversion portion, a charge holding portion, a transfer portion, and a sense node are formed in a P-type well. The charge holding portion is configured to include an N-type semiconductor region, which is a first semiconductor region holding charges in a portion different from the photoelectric conversion portion. A P-type semiconductor region having a higher concentration than the P-type well is disposed under the N-type semiconductor region.
摘要翻译：在P型阱中形成有光电转换部，电荷保持部，转印部以及感测结。电荷保持部被配置为包括作为在与光电转换部不同的部分保持电荷的第一半导体区域的N型半导体区域。具有比P型阱高的浓度的P型半导体区域设置在N型半导体区域的下方。

9. 发明授权

US08710613B2 Pickup device and method for manufacturing the same 有权
标题翻译：拾取装置及其制造方法
公开(公告)号：US08710613B2
公开(公告)日：2014-04-29
申请号：US12899404
申请日：2010-10-06
申请人： Yuichiro Yamashita , Masahiro Kobayashi , Yusuke Onuki
发明人： Yuichiro Yamashita , Masahiro Kobayashi , Yusuke Onuki
IPC分类号： H01L27/146
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14612 , H01L27/14689
摘要： A pickup device according to the present invention includes a photoelectric conversion portion, a charge holding portion configured to include a first semiconductor region, and a transfer portion configured to include a transfer gate electrode that controls a potential between the charge holding portion and a sense node. A second semiconductor region is disposed on a surface of a semiconductor region between the control electrode and the transfer gate electrode. A third semiconductor region is disposed below the second semiconductor region. An impurity concentration of the third semiconductor region is higher than the impurity concentration of the first semiconductor region.
摘要翻译：根据本发明的拾取装置包括光电转换部分，被配置为包括第一半导体区域的电荷保持部分和被配置为包括控制电荷保持部分和感测节点之间的电位的转移栅电极的转移部分。第二半导体区域设置在控制电极和传输栅电极之间的半导体区域的表面上。第三半导体区域设置在第二半导体区域的下方。第三半导体区域的杂质浓度高于第一半导体区域的杂质浓度。

10. 发明授权

US08625010B2 Solid-state imaging apparatus with each pixel including a photoelectric converter portion and plural holding portions 有权
标题翻译：每个像素包括光电转换器部分和多个保持部分的固态成像装置
公开(公告)号：US08625010B2
公开(公告)日：2014-01-07
申请号：US12933471
申请日：2009-04-30
申请人： Yuichiro Yamashita , Masahiro Kobayashi , Takanori Watanabe , Shinsuke Kojima , Takeshi Ichikawa , Yusuke Onuki
发明人： Yuichiro Yamashita , Masahiro Kobayashi , Takanori Watanabe , Shinsuke Kojima , Takeshi Ichikawa , Yusuke Onuki
IPC分类号： H04N5/335
CPC分类号： H04N5/378 , H01L27/14603 , H01L27/14609 , H01L27/14641 , H01L27/14643 , H04N5/359 , H04N5/37452 , H04N5/37457
摘要： A solid-state imaging apparatus including a plurality of pixels each including: a first holding portion for holding signal carriers from a photoelectric conversion portion; an amplifying portion for amplifying and reading a signal based on the signal carriers generated in the photoelectric conversion portion; and a carrier discharging control portion for discharging charge carriers in the photoelectric conversion portion to an OFD region, and having a carrier path between the photoelectric conversion portion and the first carrier holding portion, in which the solid-state imaging apparatus further includes a second carrier holding portion electrically connected with the first carrier portion in parallel through a first transfer unit, when viewed from an output node of the photoelectric conversion portion, thereby smoothing an movie imaging without causing discontinuous frame while suppressing generation of noise mixing into the charge carrier holding portion.
摘要翻译：一种固态成像装置，包括多个像素，每个像素包括：第一保持部分，用于保持来自光电转换部分的信号载流子; 放大部分，用于基于在光电转换部分中产生的信号载波放大和读取信号; 以及用于将光电转换部分中的载流子放电到OFD区域的载流子放电控制部分，并且在光电转换部分和第一载流子保持部分之间具有载流子路径，其中固态成像装置还包括第二载体保持部分，当从光电转换部分的输出节点观察时，通过第一传送单元并联地与第一载体部分电连接，从而平滑电影成像而不引起不连续帧，同时抑制噪声混合到电荷载体保持部分的产生。

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