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1. 发明授权

US06599794B2 Method of manufacturing a semiconductor device and semiconductor device 有权
公开(公告)号：US06599794B2
公开(公告)日：2003-07-29
申请号：US10195484
申请日：2002-07-16
申请人： Masahiro Kiyotoshi , Kazuhiro Eguchi , Masaaki Nakabayashi , Fumihiko Inoue
发明人： Masahiro Kiyotoshi , Kazuhiro Eguchi , Masaaki Nakabayashi , Fumihiko Inoue
IPC分类号： H01L218242
CPC分类号： H01L27/10852 , H01L27/10817 , H01L27/11507 , H01L28/91
摘要： A method of manufacturing a semiconductor device comprising forming a sacrificial layer including one or more conductive film on a semiconductor substrate, forming a cavity used as a template of electroplating in the sacrificial layer, growing a metal film on a surface of the cavity by the electroplating using the conductive layer as a seed layer so that a cylindrical or convex electrode can be formed, and removing the sacrificial layer so that the electrode can be formed.

2. 发明申请

US20100069439A1 MICROORGANISM CONTROL AGENT AND STABILIZING METHOD 失效
标题翻译：微生物控制剂和稳定化方法
公开(公告)号：US20100069439A1
公开(公告)日：2010-03-18
申请号：US12513582
申请日：2007-11-13
申请人： Masaaki Nakabayashi
发明人： Masaaki Nakabayashi
IPC分类号： A01N43/40 , A01P1/00
CPC分类号： A01N43/40 , A01N25/22 , A01N31/02 , A01N37/02 , A01N2300/00
摘要： Disclosed is a microorganism control agent containing not less than 1% by weight but less than 10% by weight of N,N′-hexamethylenebis(4-carbamoyl-1-decylpyridinium bromide), not less than 35% by weight but less than 60% by weight of at least one alcohol having 2 or 3 carbon atoms, water and an acid.
摘要翻译：公开了含有不少于1重量％但小于10重量％的N，N'-六亚甲基双（4-氨基甲酰基-1-癸基吡啶鎓溴化物）的微生物控制剂，不小于35重量％但小于60 至少一种具有2或3个碳原子的醇，水和酸的重量％。

3. 发明授权

US07550302B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07550302B2
公开(公告)日：2009-06-23
申请号：US11554300
申请日：2006-10-30
申请人： Wensheng Wang , Masaaki Nakabayashi , Katsuyoshi Matsuura
发明人： Wensheng Wang , Masaaki Nakabayashi , Katsuyoshi Matsuura
IPC分类号： H01G7/06
CPC分类号： H01L21/76826 , H01L21/2855 , H01L21/32051 , H01L21/76816 , H01L28/56
摘要： The present invention provides a method of manufacturing a semiconductor device. The method includes the steps of forming a first interlayer insulating film over a silicon substrate; forming a first conductive film on the first interlayer insulating film; forming a first ferroelectric film, which is crystallized, on the first conductive film; annealing the first ferroelectric film; after the annealing, forming, on the first ferroelectric film, a second ferroelectric film made of an amorphous material or a microcrystalline material; forming a second conductive film on the second ferroelectric film; and forming a capacitor by patterning the first and second conductive films and the first and second ferroelectric films.
摘要翻译：本发明提供一种制造半导体器件的方法。该方法包括在硅衬底上形成第一层间绝缘膜的步骤; 在所述第一层间绝缘膜上形成第一导电膜; 在第一导电膜上形成结晶的第一铁电体膜; 退火第一铁电薄膜; 在退火之后，在第一铁电体膜上形成由非晶材料或微晶材料制成的第二铁电体膜; 在所述第二铁电体膜上形成第二导电膜; 以及通过图案化第一和第二导电膜以及第一和第二铁电体膜来形成电容器。

4. 发明授权

US08743460B2 Diffractive optical element and method for manufacturing same 失效
$Diffractive optical element and method for manufacturing same$
标题翻译：衍射光学元件及其制造方法
公开(公告)号：US08743460B2
公开(公告)日：2014-06-03
申请号：US13591047
申请日：2012-08-21
申请人： Masaaki Nakabayashi
发明人： Masaaki Nakabayashi
IPC分类号： G02B5/18
CPC分类号： B29D11/0073 , G02B5/1852 , G02B5/1866 , G02B5/188
摘要： An element includes a first resin layer and a second resin layer disposed between a first glass lens substrate and a second glass lens substrate, a boundary surface between the first resin layer and the second resin layer having a diffraction grating shape including a plurality of inclined surfaces and wall surfaces. The second resin layer is composed of a fluororesin in which fine metal oxide particles are dispersed. Since a refractive index distribution easily occurs in this material during curing by application of ultraviolet light, by applying ultraviolet light substantially perpendicular to the inclined surfaces of the diffraction grating shape, a refractive index distribution is formed in the thickness direction perpendicularly to the inclined surfaces.
摘要翻译：元件包括第一树脂层和设置在第一玻璃透镜基板和第二玻璃透镜基板之间的第二树脂层，第一树脂层和第二树脂层之间的边界面具有包括多个倾斜表面的衍射光栅形状和墙面。第二树脂层由分散有金属氧化物微粒的氟树脂构成。由于在通过施加紫外光固化期间在该材料中容易发生折射率分布，通过施加与衍射光栅形状的倾斜表面大致垂直的紫外光，在垂直于倾斜表面的厚度方向上形成折射率分布。

5. 发明授权

US08616744B2 Vehicle headlamp 有权
标题翻译：车头灯
公开(公告)号：US08616744B2
公开(公告)日：2013-12-31
申请号：US12961945
申请日：2010-12-07
申请人： Takahiro Uchiyama , Izumi Suzuki , Masaaki Nakabayashi
发明人： Takahiro Uchiyama , Izumi Suzuki , Masaaki Nakabayashi
IPC分类号： B60Q1/00
CPC分类号： F21S41/19
摘要： A vehicle headlamp includes a lamp unit having a bulb attaching portion into which a bulb is inserted and attached, an outer housing configured to engage with the lamp unit at a location behind the bulb attaching portion, an inner housing disposed inside the outer housing such that a clearance is provided in a radial direction between the outer housing and the inner housing and such that, relative to the outer housing, the inner housing is movable in an axial direction and is rotatable about an axis extending in the axial direction, and a spring disposed between the outer housing and the inner housing to bias the inner housing toward the bulb in the axial direction. When the outer housing is engaged with the lamp unit, the spring biases the inner housing such that a flange of the bulb is pressed against the bulb attaching portion.
摘要翻译：一种车辆用前照灯，其具有：灯单元，具有灯泡安装部，灯泡插入并安装于灯泡安装部;外壳，配置为在所述灯泡安装部的后方的位置与所述灯单元接合;外壳，在外壳和内壳体之间沿径向设置间隙，并且相对于外壳体，内壳体可在轴向方向上移动并且可绕轴向延伸的轴线旋转，弹簧设置在所述外壳体和所述内壳体之间，以沿轴向朝向所述灯泡偏压所述内壳体。当外壳与灯单元接合时，弹簧偏压内壳，使得灯泡的凸缘被压靠在灯泡安装部分上。

6. 发明授权

US08007152B2 Lighting device for vehicle 有权
标题翻译：车辆照明装置
公开(公告)号：US08007152B2
公开(公告)日：2011-08-30
申请号：US12551832
申请日：2009-09-01
申请人： Masaaki Nakabayashi
发明人： Masaaki Nakabayashi
IPC分类号： B60Q1/00
CPC分类号： F21S41/255 , F21S41/143 , F21S41/147 , F21S41/24 , F21S43/14 , F21S43/235
摘要： A lighting device for a vehicle is provided. The lighting device includes a projection lens disposed on an optical axis and having a focal line, a first light emitting device disposed on a rear side of the focal line, a reflector which reflects light toward the focal line; a shade which shields a part of the light; a second light emitting device disposed on a rear side of the first light emitting device; and a light guide. The light guide includes an incident portion into which light emitted from the second light emitting device is introduced, a light guiding portion which guides the light, a shielding portion which forms a part of the shade, and an emitting portion coupled to the shielding portion and disposed on the focal line or in a vicinity of the focal line. The emitting portion emits the light guided by the light guiding portion.
摘要翻译：提供了一种用于车辆的照明装置。照明装置包括设置在光轴上并具有焦线的投影透镜，设置在焦线的后侧的第一发光装置，朝向焦线反射光的反射器; 遮蔽光的一部分的阴影; 设置在第一发光装置的后侧的第二发光装置; 和光导。导光体包括从第二发光器件发射的光被引入的入射部分，引导光的光引导部分，形成阴影的一部分的屏蔽部分和耦合到屏蔽部分的发射部分，设置在焦线或焦线附近。发光部分发射由导光部分引导的光。

7. 发明授权

US08003462B2 Manufacture method for semiconductor device having MIM capacitor, and semiconductor device 有权
标题翻译：具有MIM电容器的半导体器件的制造方法以及半导体器件
公开(公告)号：US08003462B2
公开(公告)日：2011-08-23
申请号：US12365276
申请日：2009-02-04
申请人： Masaaki Nakabayashi
发明人： Masaaki Nakabayashi
IPC分类号： H01L21/8242
CPC分类号： H01L21/7687 , C23C14/0641 , C23C16/403 , C23C16/405 , H01G4/008 , H01G4/33 , H01L21/2855 , H01L21/28556 , H01L28/40
摘要： A first electrode film containing TiAlN and a main dielectric film containing tantalum oxide are formed over a semiconductor substrate. Anneal is performed in the state that the first electrode film and the main dielectric film are formed, to react aluminum (Al) in the first electrode film with oxygen (O) in the main dielectric film and form a subsidiary dielectric film containing aluminum oxide at an interface between the first electrode film and the main dielectric film. A second electrode film is formed facing the first electrode film via the main dielectric film and the subsidiary dielectric film.
摘要翻译：在半导体衬底上形成含有TiAlN的第一电极膜和含有氧化钽的主电介质膜。在形成第一电极膜和主电介质膜的状态下进行退火，以使第一电极膜中的铝（Al）与主电介质膜中的氧（O）反应，并形成包含氧化铝的辅助电介质膜第一电极膜和主电介质膜之间的界面。通过主电介质膜和辅助电介质膜形成面向第一电极膜的第二电极膜。

8. 外观设计

USD572402S1 Light 有权
公开(公告)号：USD572402S1
公开(公告)日：2008-07-01
申请号：US29263912
申请日：2006-08-01
申请人： Masaaki Nakabayashi , Yasuo Teranishi
设计人： Masaaki Nakabayashi , Yasuo Teranishi

9. 发明授权

US06522464B2 Diffraction optical element, optical system and optical device 有权
$Diffraction optical element, optical system and optical device$
公开(公告)号：US06522464B2
公开(公告)日：2003-02-18
申请号：US09805143
申请日：2001-03-14
申请人： Tetsuo Kuwabara , Masaaki Nakabayashi
发明人： Tetsuo Kuwabara , Masaaki Nakabayashi
IPC分类号： G02F103
CPC分类号： G02B27/4211 , G02B5/1814
摘要： A diffraction optical element comprises a substrate, a diffraction grating formed on the substrate with a material with low ultraviolet resistance and an ultraviolet screening means arranged on the substrate at a position closer to the incident light receiving side of the optical element relative to the diffraction grating. The ultraviolet screening means comprises a dielectric multilayer film and is formed on the other side of the substrate than the side carrying the diffraction grating. Alternatively, the ultraviolet screening means may be provided as a separate member from a diffraction optical element and arranged at a position closer to the incident light receiving side of the diffraction optical element in an optical system.

10. 发明授权

US5874364A Thin film deposition method, capacitor device and method for fabricating the same, and semiconductor device and method for fabricating the same 失效
标题翻译：薄膜沉积法，电容器器件及其制造方法以及半导体器件及其制造方法
公开(公告)号：US5874364A
公开(公告)日：1999-02-23
申请号：US621597
申请日：1996-03-26
申请人： Masaaki Nakabayashi , Tetsuro Tamura , Hideyuki Noshiro
发明人： Masaaki Nakabayashi , Tetsuro Tamura , Hideyuki Noshiro
IPC分类号： H01L27/108 , C23C14/06 , C23C16/04 , C23C16/18 , C23C16/40 , H01L21/02 , H01L21/285 , H01L21/768 , H01L21/8242 , H01L21/302
CPC分类号： H01L21/7687 , C23C14/0641 , C23C16/04 , C23C16/18 , C23C16/40 , H01L21/2855 , H01L21/28556 , H01L21/28568 , H01L21/76879 , H01L27/1085 , H01L27/10855 , H01L28/60 , H01L28/55 , H01L28/75
摘要： The present invention relates to semiconductor techniques using high dielectric oxides, more specifically to a thin film forming method for forming a thin film which is suitable as the electrodes of the oxide high dielectrics, a capacitor device using the oxide high dielectrics and a method for fabricating the same, an a semiconductor device using the capacitor device and a method for fabricating the semiconductor device. The capacitor device comprises at least one of a pair of electrodes which is formed of a material containing titanium nitride of (200) orientation. This permits the capacitor device to have good quality even in a case that the capacitor dielectric film is formed of a high dielectric thin film grown in an oxidizing atmosphere. The capacitor device includes the electrodes of titanium nitride film, whereby the electrodes can be patterned by RIE, which much improves processing precision of the electrode patterning, and throughputs.
摘要翻译：本发明涉及使用高电介质氧化物的半导体技术，更具体地涉及一种用于形成适合作为氧化物高电介质的电极的薄膜的薄膜形成方法，使用该氧化物高电介质的电容器器件及其制造方法使用电容器器件的半导体器件和制造半导体器件的方法相同。电容器装置包括由包含（200）取向的氮化钛的材料形成的一对电极中的至少一个。这使得电容器器件即使在电容器电介质膜由在氧化气氛中生长的高电介质薄膜形成的情况下也具有良好的质量。电容器装置包括氮化钛膜的电极，由此可以通过RIE对电极进行图案化，这大大提高了电极图案化的处理精度和产量。

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