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    • 6. 发明授权
    • Semiconductor device and manufacturing method thereof
    • 半导体装置及其制造方法
    • US07081641B2
    • 2006-07-25
    • US10786097
    • 2004-02-26
    • Masahiro KawasakiShuji ImazekiMasahiko Ando
    • Masahiro KawasakiShuji ImazekiMasahiko Ando
    • H01L29/08
    • H01L51/0545H01L51/0021H01L51/0037H01L51/0052H01L51/0516
    • An object of the present invention is to provide a semiconductor device such as a display device, ID tag, sensor or the like at low cost by using a bottom contact type organic TFT as a switching element. In the present invention, the semiconductor layer of the bottom contact type organic TFT is formed of a polycrystalline material, and the taper width of each of the source and drain electrodes of the TFT in the direction of the channel length is smaller than the average particle size of semiconductor crystals grown on the source and drain electrodes. Alternatively, the side on the channel side of each of the source and drain electrodes of the bottom contact type organic TFT is formed so as to be convex upward with respect to the substrate surface. Alternatively, an organic compound layer different from the semiconductor layer of the bottom contact type organic TFT is made present between each of the source and drain electrodes of the bottom contact type organic TFT and said semiconductor layer, in a thickness of not more than 10 Å and not less than 1 Å.
    • 本发明的目的是通过使用底接触型有机TFT作为开关元件,以低成本提供诸如显示装置,ID标签,传感器等的半导体器件。 在本发明中,底部接触型有机TFT的半导体层由多晶材料形成,TFT的源极和漏极的沟道长度方向的锥形宽度小于平均粒子 在源极和漏极上生长的半导体晶体的尺寸。 或者,底接触型有机TFT的源电极和漏电极的沟道侧的一侧形成为相对于衬底表面向上凸起。 或者,在底接触型有机TFT和所述半导体层的每个源电极和漏电极之间存在不同于底接触型有机TFT的半导体层的有机化合物层,其厚度不大于 并且不小于1。
    • 10. 发明授权
    • Flash photography system
    • 闪光摄影系统
    • US06498901B2
    • 2002-12-24
    • US09955145
    • 2001-09-19
    • Masahiro KawasakiOsamu SatoShigeru IwamotoTadahisa OhkuraKazuhito Taneoka
    • Masahiro KawasakiOsamu SatoShigeru IwamotoTadahisa OhkuraKazuhito Taneoka
    • G03B1505
    • G03B15/05G03B2215/0553H05B41/325
    • A flash photography system includes a first photometering device including a multi-segment photometering sensor having a plurality of zone sensors for measuring a pre-flash emission; a second photometering device including a single-segment direct photometering sensor for measuring a main flash emission; a weighting device which assigns a weighting factor to an output of each of the plurality of zone sensors; a calculation device which calculates a correction value based on each photometering value and the weighting factor of each zone sensor of the first photometering device, wherein an appropriate receiving light amount of the second photometering device is calculated in order to attain a compensation exposure for the main flash emission based on the correction value; and a controller which terminates the main flash emission after the light amount measured by the second photometering device reaches the appropriate receiving light amount.
    • 闪光摄影系统包括第一测光装置,其包括具有用于测量预闪光发射的多个区域传感器的多段测光传感器; 第二测光装置,包括用于测量主闪光发射的单段直接测光传感器; 加权装置,其向所述多个区域传感器中的每一个的输出分配加权因子; 计算装置,其基于第一测光装置的每个区域传感器的每个测光值和加权系数来计算校正值,其中计算第二测光装置的适当的接收光量,以获得主要的补偿曝光 基于校正值的闪光发射; 以及在由第二测光装置测量的光量之后终止主闪光发射的控制器达到适当的接收光量。