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1. 发明授权

US06339014B1 Method for growing nitride compound semiconductor 有权
标题翻译：生长氮化物半导体的方法
公开(公告)号：US06339014B1
公开(公告)日：2002-01-15
申请号：US09289960
申请日：1999-04-13
申请人： Masahiro Ishida , Masaaki Yuri , Osamu Imafuji , Tadao Hashimoto , Kenji Orita
发明人： Masahiro Ishida , Masaaki Yuri , Osamu Imafuji , Tadao Hashimoto , Kenji Orita
IPC分类号： H01L2120
CPC分类号： H01L33/025 , C30B25/02 , C30B29/403 , C30B29/406 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01L21/02658 , H01L33/0075
摘要： A method for growing a nitride compound semiconductor according to the present invention includes the step of growing a compound semiconductor expressed by a general formula AlxGa1-xN (where 0≦×≦1) on a nitride compound semiconductor substrate at a temperature of about 900° C. or more.
摘要翻译：根据本发明的用于生长氮化物化合物半导体的方法包括在氮化物半导体衬底上在大约温度下生长由通式Al x Ga 1-x N（其中0 <= x <= 1）表示的化合物半导体的步骤 900℃以上。

2. 发明授权

US6069394A Semiconductor substrate, semiconductor device and method of manufacturing the same 失效
公开(公告)号：US6069394A
公开(公告)日：2000-05-30
申请号：US56500
申请日：1998-04-08
申请人： Tadao Hashimoto , Osamu Imafuji , Masaaki Yuri , Masahiro Ishida
发明人： Tadao Hashimoto , Osamu Imafuji , Masaaki Yuri , Masahiro Ishida
IPC分类号： C30B25/18 , H01L33/00 , H01S5/02 , H01S5/323 , H01L31/00 , H01L29/06 , H01L31/06 , H01L31/12
CPC分类号： H01L33/007 , B82Y20/00 , C30B25/18 , H01S2301/173 , H01S5/0207 , H01S5/021 , H01S5/2231 , H01S5/3201 , H01S5/34333
摘要： A sapphire substrate, a buffer layer of undoped GaN and a compound semiconductor crystal layer successively formed on the sapphire substrate together form a substrate of a light emitting diode. A first cladding layer of n-type GaN, an active layer of undoped In.sub.0.2 Ga.sub.0.8 N and a second cladding layer successively formed on the compound semiconductor crystal layer together form a device structure of the light emitting diode. On the second cladding layer, a p-type electrode is formed, and on the first cladding layer, an n-type electrode is formed. In a part of the sapphire substrate opposing the p-type electrode, a recess having a trapezoidal section is formed, so that the thickness of an upper portion of the sapphire substrate above the recess can be substantially equal to or smaller than the thickness of the compound semiconductor crystal layer.

3. 发明授权

US06593159B1 Semiconductor substrate, semiconductor device and method of manufacturing the same 失效
标题翻译：半导体衬底，半导体器件及其制造方法
公开(公告)号：US06593159B1
公开(公告)日：2003-07-15
申请号：US09532063
申请日：2000-03-21
申请人： Tadao Hashimoto , Osamu Imafuji , Masaaki Yuri , Masahiro Ishida
发明人： Tadao Hashimoto , Osamu Imafuji , Masaaki Yuri , Masahiro Ishida
IPC分类号： H01L2100
CPC分类号： H01L33/007 , B82Y20/00 , C30B25/18 , H01S5/0207 , H01S5/021 , H01S5/2231 , H01S5/3201 , H01S5/34333 , H01S2301/173
摘要： A sapphire substrate, a buffer layer of undoped GaN and a compound semiconductor crystal layer successively formed on the sapphire substrate together form a substrate of a light emitting diode. A first cladding layer of n-type GaN, an active layer of undoped In0.2Ga0.8N and a second cladding layer successively formed on the compound semiconductor crystal layer together form a device structure of the light emitting diode. On the second cladding layer, a p-type electrode is formed, and on the first cladding layer, an n-type electrode is formed. In a part of the sapphire substrate opposing the p-type electrode, a recess having a trapezoidal section is formed, so that the thickness of an upper portion of the sapphire substrate above the recess can be substantially equal to or smaller than the thickness of the compound semiconductor crystal layer.
摘要翻译：蓝宝石衬底，未掺杂GaN的缓冲层和连续形成在蓝宝石衬底上的化合物半导体晶体层一起形成发光二极管的衬底。 n型GaN的第一包层，未掺杂的In 0.2 Ga 0.8 N的有源层和连续形成在化合物半导体晶体层上的第二覆层一起形成发光二极管的器件结构。在第二包层上形成p型电极，在第一包层上形成n型电极。在与p型电极相对的蓝宝石衬底的一部分中，形成具有梯形截面的凹部，使得凹部上方的蓝宝石衬底的上部的厚度可以基本上等于或小于化合物半导体晶体层。

4. 发明授权

US06249534B1 Nitride semiconductor laser device 有权
标题翻译：氮化物半导体激光器件
公开(公告)号：US06249534B1
公开(公告)日：2001-06-19
申请号：US09285648
申请日：1999-04-05
申请人： Kunio Itoh , Masaaki Yuri , Tadao Hashimoto , Masahiro Ishida
发明人： Kunio Itoh , Masaaki Yuri , Tadao Hashimoto , Masahiro Ishida
IPC分类号： H01S5028
CPC分类号： B82Y20/00 , H01S5/0281 , H01S5/0287 , H01S5/10 , H01S5/34333
摘要： The nitride semiconductor laser device of the present invention includes: a nitride semiconductor laser diode; and a protective layer formed on at least one facet of the nitride semiconductor laser diode. The protective layer is made of Al1-x-y-zGaxInyBaN (where 0≦x, y, z≦1 and 0≦x+y+z≦1), which is transparent to light emitted from the laser diode.
摘要翻译：本发明的氮化物半导体激光器件包括：氮化物半导体激光二极管; 以及形成在所述氮化物半导体激光二极管的至少一个面上的保护层。保护层由对激光二极管发出的光透明的Al1-x-y-zGaxInyBaN（其中0 <= x，y，z <= 1和0 <= x + y + z <= 1）制成。

5. 发明授权

US08875630B2 Printer 有权
标题翻译：打印机
公开(公告)号：US08875630B2
公开(公告)日：2014-11-04
申请号：US12998789
申请日：2009-05-21
申请人： Masayuki Izume , Tadao Hashimoto , Kenjiro Yamasaki
发明人： Masayuki Izume , Tadao Hashimoto , Kenjiro Yamasaki
IPC分类号： B41F1/34 , B41F23/04 , B41F13/22 , B41F27/12
CPC分类号： B41F13/22 , B41F27/1206
摘要： The present invention provides a printer which can facilitate temperature control of a machine-plate cylinder section, can allow simple setup, and can facilitate maintenance of printing quality in continuous printing. In the printer, a machine plate is mounted on the outer circumference of a machine-plate cylinder section 12 fixedly provided on a machine-plate drive shaft 1. A fluid whose temperature is regulated is circulated in the machine-plate cylinder section 12.
摘要翻译：本发明提供一种可以促进机板圆筒部分的温度控制的打印机，可以简单的设置，并且可以便于维持连续打印中的打印质量。在打印机中，机板安装在固定设置在机板驱动轴1上的印版滚筒部分12的外圆周上。温度调节的流体在印版滚筒部分12中循环。

6. 发明申请

US20130206997A1 RADIATION MONITOR AND HAND-FOOT CLOTH MONITOR INCLUDING HAND MONITORING UNIT 有权
标题翻译：辐射监视器和手持式监视器，包括手持监控单元
公开(公告)号：US20130206997A1
公开(公告)日：2013-08-15
申请号：US13138550
申请日：2010-10-21
申请人： Tadao Hashimoto , Hideyuki Norimatsu , Daisuke Inui
发明人： Tadao Hashimoto , Hideyuki Norimatsu , Daisuke Inui
IPC分类号： G01T1/167
CPC分类号： G01T1/167
摘要： A radiation monitor and a hand-foot-cloth monitor include a hand monitoring unit capable of accurately measuring surface contamination regardless of the size of the hand of the examinee. A hand monitoring unit (7A) includes a fixed detecting unit (73a) and a movable detecting unit (72a) arranged to face the fixed detecting unit (73a) and movable reciprocatingly in a direction facing the fixed detecting unit (73a), an urging unit (79a) urging the movable detecting unit (72a) in a direction separating from the fixed detecting unit (73a), a pressing member (74a) arranged between the fixed detecting unit (73a) and the movable detecting unit (72a) and pressable by the hand of the examinee, and an interlock mechanism (77a) moving the movable detecting unit (72a) against the urging force of the urging unit (79a) in a direction approaching the fixed detecting unit (73a) according to the amount of pressing of the pressing member (74a).
摘要翻译：辐射监视器和手足布监视器包括能够准确地测量表面污染的手监测单元，而不管受检者的手的大小如何。手动监控单元（7A）包括固定检测单元（73a）和可移动检测单元（72a），可移动检测单元（72a）布置成面向固定检测单元（73a）并且可沿与固定检测单元（73a）相对的方向往复运动，单元（79a）沿与分离固定检测单元（73a）的方向推动可移动检测单元（72a）;按压构件（74a），布置在固定检测单元（73a）和可移动检测单元（72a）之间，以及一个联动机构（77a），该联锁机构（77a）根据压力的数量，克服施力单元（79a）在接近固定检测单元（73a）的方向上抵抗推压单元（79a）的作用力移动可移动检测单元的压紧构件（74a）。

7. 发明授权

US08236267B2 High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal 有权
标题翻译：用于生长III族氮化物晶体的高压容器和使用高压容器和III族氮化物晶体生长III族氮化物晶体的方法
公开(公告)号：US08236267B2
公开(公告)日：2012-08-07
申请号：US12455683
申请日：2009-06-04
申请人： Tadao Hashimoto , Edward Letts , Masanori Ikari
发明人： Tadao Hashimoto , Edward Letts , Masanori Ikari
IPC分类号： C01B21/06 , C30B23/00 , C23C16/00
CPC分类号： C30B7/105 , B32B15/01 , C30B7/10 , C30B29/403 , C30B29/406 , C30B35/002 , Y10T428/12028
摘要： The present invention discloses a high-pressure vessel of large size formed with a limited size of e.g. Ni—Cr based precipitation hardenable superalloy. The vessel may have multiple zones.For instance, the high-pressure vessel may be divided into at least three regions with flow-restricting devices and the crystallization region is set higher temperature than other regions. This structure helps to reliably seal both ends of the high-pressure vessel, and at the same time, may help to greatly reduce unfavorable precipitation of group III nitride at the bottom of the vessel.This invention also discloses novel procedures to grow crystals with improved purity, transparency and structural quality. Alkali metal-containing mineralizers are charged with minimum exposure to oxygen and moisture until the high-pressure vessel is filled with ammonia. Several methods to reduce oxygen contamination during the process steps are presented. Also, back etching of seed crystals and a new temperature ramping scheme to improve structural quality are disclosed.
摘要翻译：本发明公开了一种大尺寸的大型高压容器。 Ni-Cr基沉淀硬化型超合金。船舶可能有多个区域。例如，高压容器可以分为具有流量限制装置的至少三个区域，并且结晶区域设定为比其他区域更高的温度。该结构有助于可靠地密封高压容器的两端，并且同时可有助于大大减少容器底部的III族氮化物的不利沉淀。本发明还公开了提高纯度，透明度和结构质量的晶体生长的新方法。含碱金属的矿化剂以最低的氧气和湿度暴露于高压容器中充满氨。介绍了在工艺步骤中减少氧气污染的几种方法。此外，公开了种晶的背面蚀刻和新的温度梯度方案以提高结构质量。

8. 发明申请

US20110239880A1 PRINTER 有权
标题翻译：打印机
公开(公告)号：US20110239880A1
公开(公告)日：2011-10-06
申请号：US12998789
申请日：2009-05-21
申请人： Masayuki Izume , Tadao Hashimoto , Kenjiro Yamasaki
发明人： Masayuki Izume , Tadao Hashimoto , Kenjiro Yamasaki
IPC分类号： B41L47/02
CPC分类号： B41F13/22 , B41F27/1206
摘要： The present invention provides a printer which can facilitate temperature control of a machine-plate cylinder section, can allow simple setup, and can facilitate maintenance of printing quality in continuous printing. In the printer, a machine plate is mounted on the outer circumference of a machine-plate cylinder section 12 fixedly provided on a machine-plate drive shaft 1. A fluid whose temperature is regulated is circulated in the machine-plate cylinder section 12.
摘要翻译：本发明提供一种可以促进机板圆筒部分的温度控制的打印机，可以简单的设置，并且可以便于维持连续打印中的打印质量。在打印机中，机板安装在固定设置在机板驱动轴1上的印版滚筒部分12的外圆周上。温度调节的流体在印版滚筒部分12中循环。

9. 发明申请

US20100303704A1 METHOD FOR GROWING GROUP III-NITRIDE CRYSTALS IN A MIXTURE OF SUPERCRITICAL AMMONIA AND NITROGEN, AND GROUP III-NITRIDE CRYSTALS GROWN THEREBY 审中-公开
标题翻译：在超临界氨和硝酸混合物中生长III族氮化物晶体的方法，以及其中所组成的III族氮化物晶体
公开(公告)号：US20100303704A1
公开(公告)日：2010-12-02
申请号：US12850383
申请日：2010-08-04
申请人： Tadao Hashimoto
发明人： Tadao Hashimoto
IPC分类号： C01B21/06 , C30B23/00
CPC分类号： C30B29/403 , C30B7/105
摘要： A method of growing group III-nitride crystals in a mixture of supercritical ammonia and nitrogen, and the group-III crystals grown by this method. The group III-nitride crystal is grown in a reaction vessel in supercritical ammonia using a source material or nutrient that is polycrystalline group III-nitride, amorphous group III-nitride, group-III metal or a mixture of the above, and a seed crystal that is a group-III nitride single crystal. In order to grow high-quality group III-nitride crystals, the crystallization temperature is set at 550° C. or higher. Theoretical calculations show that dissociation of NH3 at this temperature is significant. However, the dissociation of NH3 is avoided by adding extra N2 pressure after filling the reaction vessel with NH3.
摘要翻译：在超临界氨和氮的混合物中生长III族氮化物晶体的方法和通过该方法生长的III族晶体的方法。 III族氮化物晶体使用多晶III族氮化物，非晶III族氮化物，III族金属或其混合物的源材料或营养物质在超临界氨的反应容器中生长，即III族氮化物单晶。为了生长高质量III族氮化物晶体，结晶温度设定在550℃以上。理论计算表明，NH3在此温度下的解离是显着的。然而，通过在用NH 3填充反应容器后加入额外的N 2压力来避免NH 3的离解。

10. 发明授权

US5323446A Digital cellular switching system with means for securing uninterrupted data transparency during handoffs 失效
标题翻译：数字蜂窝交换系统，具有在切换期间保证数据透明度不间断的方法
公开(公告)号：US5323446A
公开(公告)日：1994-06-21
申请号：US870083
申请日：1992-04-17
申请人： Susumu Kojima , Noriaki Nagashima , Tadao Hashimoto
发明人： Susumu Kojima , Noriaki Nagashima , Tadao Hashimoto
IPC分类号： H04J3/00 , H04L5/22 , H04W36/08 , H04W36/18 , H04M911/00 , H04B1/00 , H04Q7/00
CPC分类号： H04W36/30 , H04W36/18
摘要： In a cellular communications system, the quality of a signal transmitted over a first two-way connection from a mobile station via a first base station is compared with a threshold to determine whether a handoff is to be performed to a second, adjacent base station. When the quality of the transmitted signal becomes lower than the threshold, a second two-way connection is established from the mobile station to the second base station, and a switching request signal and an information-bearing signal are sent from the mobile station over both connections to a switching exchange. In response to the request signal, one directional path of the first connection is cleared to prevent a version of the signal passing through the first connection from reaching the destination station, and a first switching complete signal is sent through the other path of the first connection to the mobile station to allow it to clear the first connection and return a second switching complete signal. The other path of the first connection is then cleared in response to the second switching complete signal, leaving the second connection between the mobile station and the second base station.
摘要翻译：在蜂窝通信系统中，将通过第一基站从移动台通过第一双向连接发送的信号的质量与阈值进行比较，以确定是否要向第二相邻基站执行越区切换。当发送信号的质量变得低于阈值时，从移动台向第二基站建立第二双向连接，并且从移动台通过两者发送切换请求信号和信息承载信号连接到交换机交换机。响应于请求信号，清除第一连接的一个方向路径以防止通过第一连接的信号的版本到达目的站，并且通过第一连接的另一路径发送第一切换完成信号到移动台以允许其清除第一连接并返回第二切换完成信号。然后响应于第二切换完成信号清除第一连接的另一路径，留下移动站和第二基站之间的第二连接。

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