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1. 发明授权

US08268403B2 Method for forming organic silica film, organic silica film, wiring structure, semiconductor device, and composition for film formation 有权
标题翻译：形成有机二氧化硅膜，有机二氧化硅膜，布线结构，半导体器件和成膜用组合物的方法
公开(公告)号：US08268403B2
公开(公告)日：2012-09-18
申请号：US11596295
申请日：2005-04-28
申请人： Masahiro Akiyama , Hisashi Nakagawa , Tatsuya Yamanaka , Atsushi Shiota , Takahiko Kurosawa
发明人： Masahiro Akiyama , Hisashi Nakagawa , Tatsuya Yamanaka , Atsushi Shiota , Takahiko Kurosawa
IPC分类号： B05D3/02
CPC分类号： H01L21/31058 , C08G77/60 , C08J3/28 , C08J2383/04 , C08J2383/16 , C08L83/04 , C08L83/14 , C09D183/14 , H01B3/46 , H01L21/02126 , H01L21/02211 , H01L21/02282 , H01L21/02348 , H01L21/31633 , Y10T428/265 , Y10T428/31663 , C08L83/00
摘要： A method of forming an organic silica film includes forming a coating including a silicon compound having an —Si—O—Si— structure and an —Si—CH2—Si— structure on a substrate, heating the coating, and curing the coating by applying ultraviolet radiation.
摘要翻译：形成有机二氧化硅膜的方法包括在基材上形成包含具有-Si-O-Si-结构和-Si-CH2-Si-结构的硅化合物的涂层，加热涂层，并通过涂覆固化涂层紫外线辐射。

2. 发明申请

US20080268264A1 Method for Forming Organic Silica Film, Organic Silica Film, Wiring Structure, Semiconductor Device, and Composition for Film Formation 有权
标题翻译：用于形成有机硅膜，有机硅膜，接线结构，半导体器件和用于成膜的组合物的方法
公开(公告)号：US20080268264A1
公开(公告)日：2008-10-30
申请号：US11596295
申请日：2005-04-28
申请人： Masahiro Akiyama , Hisashi Nakagawa , Tatsuya Yamanaka , Atsushi Shiota , Takahiko Kurosawa
发明人： Masahiro Akiyama , Hisashi Nakagawa , Tatsuya Yamanaka , Atsushi Shiota , Takahiko Kurosawa
IPC分类号： B32B9/00 , C08G77/12 , B05D3/06
CPC分类号： H01L21/31058 , C08G77/60 , C08J3/28 , C08J2383/04 , C08J2383/16 , C08L83/04 , C08L83/14 , C09D183/14 , H01B3/46 , H01L21/02126 , H01L21/02211 , H01L21/02282 , H01L21/02348 , H01L21/31633 , Y10T428/265 , Y10T428/31663 , C08L83/00
摘要： A method of forming an organic silica film includes forming a coating including a silicon compound having an —Si—O—Si— structure and an —Si—CH2—Si— structure on a substrate, heating the coating, and curing the coating by applying ultraviolet radiation.
摘要翻译：形成有机二氧化硅膜的方法包括在基板上形成包含具有-Si-O-Si结构和-Si-CH 2 -Si-结构的硅化合物的涂层，加热通过施加紫外线照射来涂覆和固化涂层。

3. 发明授权

US07736748B2 Insulating-film-forming composition, method of producing the same, silica-based insulating film, and method of forming the same 失效
标题翻译：绝缘膜形成用组合物及其制造方法，二氧化硅系绝缘膜及其形成方法
公开(公告)号：US07736748B2
公开(公告)日：2010-06-15
申请号：US11580959
申请日：2006-10-16
申请人： Masahiro Akiyama , Hisashi Nakagawa , Takahiko Kurosawa , Atsushi Shiota
发明人： Masahiro Akiyama , Hisashi Nakagawa , Takahiko Kurosawa , Atsushi Shiota
IPC分类号： B32B27/00 , B32B9/04 , C08L83/00 , C08G77/04
CPC分类号： C08L83/14 , C08G77/50 , C08G77/60 , C09D183/14 , H01B3/30 , H01L21/02126 , H01L21/0234 , H01L21/02348 , H01L21/02351 , H01L21/3121 , Y10T428/31663
摘要： An insulating-film-forming composition including an organic solvent and a hydrolysis-condensation product which is obtained by hydrolysis and condensation of a component (A) in the presence of a component (B).
摘要翻译：一种绝缘膜形成组合物，其包含通过在（B）成分的存在下水解和缩合组分（A）而获得的有机溶剂和水解缩合产物。

4. 发明申请

US20070031687A1 Insulating-film-forming composition, method of producing the same, silica-based insulating film, and method of forming the same 失效
标题翻译：绝缘膜形成用组合物及其制造方法，二氧化硅系绝缘膜及其形成方法
公开(公告)号：US20070031687A1
公开(公告)日：2007-02-08
申请号：US11580959
申请日：2006-10-16
申请人： Masahiro Akiyama , Hisashi Nakagawa , Takahiko Kurosawa , Atsushi Shiota
发明人： Masahiro Akiyama , Hisashi Nakagawa , Takahiko Kurosawa , Atsushi Shiota
IPC分类号： B32B27/00 , C08L83/00 , C08G77/04 , B32B9/04
CPC分类号： C08L83/14 , C08G77/50 , C08G77/60 , C09D183/14 , H01B3/30 , H01L21/02126 , H01L21/0234 , H01L21/02348 , H01L21/02351 , H01L21/3121 , Y10T428/31663
摘要： An insulating-film-forming composition including an organic solvent and a hydrolysis-condensation product which is obtained by hydrolysis and condensation of a component (A) in the presence of a component (B).
摘要翻译：一种绝缘膜形成组合物，其包含通过在（B）成分的存在下水解和缩合组分（A）而获得的有机溶剂和水解缩合产物。

5. 发明授权

US08404786B2 Polymer and process for producing the same, composition for forming insulating film, and insulating film and method of forming the same 有权
标题翻译：聚合物及其制造方法，用于形成绝缘膜的组合物和绝缘膜及其形成方法
公开(公告)号：US08404786B2
公开(公告)日：2013-03-26
申请号：US12717225
申请日：2010-03-04
申请人： Masahiro Akiyama , Takahiko Kurosawa , Hisashi Nakagawa , Atsushi Shiota
发明人： Masahiro Akiyama , Takahiko Kurosawa , Hisashi Nakagawa , Atsushi Shiota
IPC分类号： C08G77/60
CPC分类号： C08G77/42 , C08G77/48 , C09D183/14 , H01B3/30 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/02348 , H01L21/02351 , H01L21/3122 , H01L21/31633
摘要： A process for producing a polymer includes mixing (A) a polysiloxane compound and (B) a polycarbosilane compound in the presence of a catalyst, water, and an organic solvent, and heating the mixture.
摘要翻译：制备聚合物的方法包括在催化剂，水和有机溶剂的存在下混合（A）聚硅氧烷化合物和（B）聚碳硅烷化合物，并加热该混合物。

6. 发明申请

US20080038527A1 Method for Forming Organic Silica Film, Organic Silica Film, Wiring Structure, Semiconductor Device, and Composition for Film Formation 审中-公开
标题翻译：用于形成有机硅膜，有机硅膜，接线结构，半导体器件和用于成膜的组合物的方法
公开(公告)号：US20080038527A1
公开(公告)日：2008-02-14
申请号：US11596188
申请日：2005-05-11
申请人： Masahiro Akiyama , Takahiko Kurosawa , Hisashi Nakagawa , Atsushi Shiota
发明人： Masahiro Akiyama , Takahiko Kurosawa , Hisashi Nakagawa , Atsushi Shiota
IPC分类号： B05D3/02 , B32B27/28 , C08G77/04
CPC分类号： H01L21/02126 , C09D183/14 , H01B3/46 , H01L21/02211 , H01L21/02216 , H01L21/02282 , H01L21/02351 , H01L21/31058 , H01L21/31633
摘要： A method of forming an organic silica film capable of efficiently curing a coating at a lower dose of electron beams in a shorter time at a lower temperature and forming a film which may be suitably used as an interlayer dielectric for semiconductor devices and the like and exhibits a low relative dielectric constant and excellent mechanical strength, adhesion, plasma resistance, and chemical resistance, a film-forming composition used for the method, an organic silica film obtained by the method, a wiring structure including the organic silica film, and a semiconductor device including the wiring structure. A method of forming an organic silica film according to the invention includes forming a coating including a silicon compound having an —Si—O—Si— structure and an —Si—CH2—Si— structure on a substrate, heating the coating, and curing the coating by applying electron beams.
摘要翻译：一种形成有机二氧化硅膜的方法，其能够在较低温度下在较短时间内以较低剂量的电子束有效地固化涂层，并形成适合用作半导体器件等的层间电介质的膜，并且显示出低相对介电常数和优异的机械强度，粘附性，等离子体电阻和耐化学性，用于该方法的成膜组合物，通过该方法获得的有机二氧化硅膜，包含有机二氧化硅膜的布线结构和半导体装置包括布线结构。根据本发明的形成有机二氧化硅膜的方法包括在a上形成包含具有-Si-O-Si-结构和-Si-CH 2 -Si-结构的硅化合物的涂层衬底，加热涂层，并通过施加电子束固化涂层。

7. 发明申请

US20100168327A1 POLYMER AND PROCESS FOR PRODUCING THE SAME, COMPOSITION FOR FORMING INSULATING FILM, AND INSULATING FILM AND METHOD OF FORMING THE SAME 有权
标题翻译：聚合物及其制造方法，形成绝缘膜的组合物和绝缘膜及其形成方法
公开(公告)号：US20100168327A1
公开(公告)日：2010-07-01
申请号：US12717225
申请日：2010-03-04
申请人： Masahiro AKIYAMA , Takahiko Kurosawa , Hisashi Nakagawa , Atsushi Shiota
发明人： Masahiro AKIYAMA , Takahiko Kurosawa , Hisashi Nakagawa , Atsushi Shiota
IPC分类号： C08L83/04 , C08G77/38 , B05D3/02
CPC分类号： C08G77/42 , C08G77/48 , C09D183/14 , H01B3/30 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/02348 , H01L21/02351 , H01L21/3122 , H01L21/31633
摘要： A process for producing a polymer includes mixing (A) a polysiloxane compound and (B) a polycarbosilane compound in the presence of a catalyst, water, and an organic solvent, and heating the mixture.
摘要翻译：制备聚合物的方法包括在催化剂，水和有机溶剂的存在下混合（A）聚硅氧烷化合物和（B）聚碳硅烷化合物，并加热该混合物。

8. 发明申请

US20070021580A1 Method for producing polymer, polymer, composition for forming insulating film, method for producing insulating film, and insulating film 有权
标题翻译：聚合物，聚合物，绝缘膜形成用组合物，绝缘膜的制造方法以及绝缘膜的制造方法
公开(公告)号：US20070021580A1
公开(公告)日：2007-01-25
申请号：US11485508
申请日：2006-07-13
申请人： Hisashi Nakagawa , Masahiro Akiyama , Takahiko Kurosawa , Atsushi Shiota
发明人： Hisashi Nakagawa , Masahiro Akiyama , Takahiko Kurosawa , Atsushi Shiota
IPC分类号： C08G77/60
CPC分类号： H01L21/02126 , C09D183/14 , H01B3/30 , H01L21/02216 , H01L21/02282 , H01L21/3121 , H01L21/3122
摘要： A method of producing a polymer includes hydrolyzing and condensing a hydrolyzable-group-containing silane monomer (B) in the presence of one or more polycarbosilanes (A), at least one of the polycarbosilanes (A) being a polycarbosilane (I) having a weight average molecular weight of 500 or more and obtained by reacting a compound of the following general formula (1) in the presence of at least one of an alkali metal and an alkaline earth metal, R1mY3-mSiCR2nX3-n (1) wherein R1 and R2 individually represent a monovalent organic group or a hydrogen atom, X represents a halogen atom, Y represents a halogen atom or an alkoxy group, and m and n individually represent integers from 0 to 2.
摘要翻译：一种聚合物的制造方法，在一种或多种聚碳硅烷（A）的存在下水解和缩合含有水解性基团的硅烷单体（B），所述聚碳硅烷（A）中的至少一种为具有通过在碱金属和碱土金属中的至少一种的存在下使下列通式（1）的化合物反应得到的重均分子量为500以上，线公式“end =”lead“？> R 1> 3 3 3 SiCR 2 （1）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中R 1 = SUP＆gt;和R 2各自独立地表示一价有机基团或氢原子，X表示卤素原子，Y表示卤素原子或烷氧基，m和n分别表示0〜2的整数。

9. 发明申请

US20070015892A1 Method for producing polymer, polymer, composition for forming insulating film, method for producing insulating film, and insulating film 审中-公开
标题翻译：聚合物，聚合物，绝缘膜形成用组合物，绝缘膜的制造方法以及绝缘膜的制造方法
公开(公告)号：US20070015892A1
公开(公告)日：2007-01-18
申请号：US11484604
申请日：2006-07-12
申请人： Hisashi Nakagawa , Masahiro Akiyama , Takahiko Kurosawa , Atsushi Shiota
发明人： Hisashi Nakagawa , Masahiro Akiyama , Takahiko Kurosawa , Atsushi Shiota
IPC分类号： C08G77/04 , B05D3/02
CPC分类号： H01L21/02126 , C09D183/14 , H01B3/30 , H01L21/02216 , H01L21/02282 , H01L21/3121 , H01L21/3122
摘要： A method for producing a polymer includes hydrolyzing and condensing (B) a hydrolyzable-group-containing silane monomer in the presence of (A) a polycarbosilane, the polycarbosilane (A) being a polymer (I) obtained by reacting (a) a compound shown by the following general formula (1) and (b) at least one compound selected from the group consisting of a compound shown by the following general formula (2) and a compound shown by the following general formula (3) in an organic solvent in the presence of at least one of an alkali metal and an alkaline earth metal, R1kCX4-k (1) R2kSiY4-k (2) R3mY3-mSiCR4nX3-n (3) wherein R1 to R4 individually represent a monovalent organic group or a hydrogen atom, X represents a halogen atom, Y represents a halogen atom or an alkoxy group, k represents an integer from 0 to 3, and m and n individually represent integers from 0 to 2.
摘要翻译：制备聚合物的方法包括在（A）聚碳硅烷存在下水解和缩合（B）含可水解基团的硅烷单体，所述聚碳硅烷（A）是通过使（a）化合物由下述通式（1）和（b）表示的有机溶剂中的至少一种选自下述通式（2）表示的化合物和下述通式（3）所示的化合物的化合物在碱金属和碱土金属中的至少一种的存在下，<？in-line-formula description =“In-line formula”end =“lead”？> R＆lt; SUB （1）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“在线公式”end =“lead”？> R 2> 2 （3） -formulae description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> R <3> _{m 3-m SiCR 4 N 3-n（3）<？in-line-formula description =“ 其中R 1至R 4各自独立地表示一价有机基团或氢原子，X表示卤素原子，Y 表示卤素原子或烷氧基，k表示0〜3的整数，m和n分别表示0〜2的整数。}

10. 发明申请

US20060134336A1 Novel polycarbosilane and method of producing the same, film-forming composition, and film and method of forming the same 审中-公开
标题翻译：新型聚碳硅烷及其制造方法，成膜组合物及其成膜方法
公开(公告)号：US20060134336A1
公开(公告)日：2006-06-22
申请号：US11284944
申请日：2005-11-23
申请人： Hisashi Nakagawa , Masahiro Akiyama , Takahiko Kurosawa , Atsushi Shiota
发明人： Hisashi Nakagawa , Masahiro Akiyama , Takahiko Kurosawa , Atsushi Shiota
IPC分类号： B05D3/02 , C08F2/46 , C08G77/12
CPC分类号： C08G77/60
摘要： A method of producing a polycarbosilane includes reacting (A) a polycarbosilane having a silicon-hydrogen bond and (B) a compound having a carbon-carbon multiple bond to which a silicon-hydrogen bond may be added.
摘要翻译：一种制备聚碳硅烷的方法包括使（A）具有硅 - 氢键的聚碳硅烷与（B）可以加入硅 - 氢键的具有碳 - 碳多重键的化合物反应。

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