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1. 发明授权

US4974736A Multi-electron-beam pattern drawing apparatus 失效
公开(公告)号：US4974736A
公开(公告)日：1990-12-04
申请号：US469730
申请日：1990-01-24
申请人： Masahiko Okunuki , Mitsuaki Seki , Isamu Shimoda , Mamoru Miyawaki , Takeo Tsukamoto , Akira Suzuki , Tetsuya Kaneko , Toshihiko Takeda
发明人： Masahiko Okunuki , Mitsuaki Seki , Isamu Shimoda , Mamoru Miyawaki , Takeo Tsukamoto , Akira Suzuki , Tetsuya Kaneko , Toshihiko Takeda
IPC分类号： H01J37/073 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/073 , H01J37/3177
摘要： A multi-electron-beam pattern drawing apparatus having a plurality of electron beam sources and a plurality of electron beam sensors, provided on a common base member, is disclosed. The electron beam sources can be selectively driven for different uses, such as a pattern drawing (exposure) purpose and position detecting purpose, for example. In another aspect, the apparatus is provided with a function for correcting the pattern drawing magnification.

2. 发明授权

US4897552A Multi-electron-beam pattern drawing apparatus 失效
标题翻译：多电子束图形绘制装置
公开(公告)号：US4897552A
公开(公告)日：1990-01-30
申请号：US186967
申请日：1988-04-27
申请人： Masahiko Okunuki , Isamu Shimoda , Mamoru Miyawaki , Takeo Tsukamoto , Akira Suzuki , Tetsuya Kaneko , Toshihiko Takeda , Mitsuaki Seki
发明人： Masahiko Okunuki , Isamu Shimoda , Mamoru Miyawaki , Takeo Tsukamoto , Akira Suzuki , Tetsuya Kaneko , Toshihiko Takeda , Mitsuaki Seki
IPC分类号： H01J37/30 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3007 , H01J37/3177
摘要： A charged-particle beam pattern drawing apparatus for drawing, by use of a charged-particle beam, a desired circuit pattern on a workpiece having a surface coated with a sensitive material, is disclosed. The apparatus includes a data source having data stored therein related to the circuit pattern, a plurality of charged-particle beam producing sources for emitting charged-particle beams toward the workpiece, in accordance with the data supplied thereto from the data source, and a plurality of deflecting electrodes each being provided for a corresponding one of the charged-particle beam producing source, for deflecting the charged-particle beams from the charged-particle beam producing sources independently of each other and in accordance with the data supplied from the data source.

3. 发明授权

US4904895A Electron emission device 失效
标题翻译：电子发射装置
公开(公告)号：US4904895A
公开(公告)日：1990-02-27
申请号：US189216
申请日：1988-05-02
申请人： Takeo Tsukamoto , Mamoru Miyawaki , Tetsuya Kaneko , Akira Suzuki , Isamu Shimoda , Toshihiko Takeda , Masahiko Okunuki
发明人： Takeo Tsukamoto , Mamoru Miyawaki , Tetsuya Kaneko , Akira Suzuki , Isamu Shimoda , Toshihiko Takeda , Masahiko Okunuki
IPC分类号： H01J1/304 , H01J3/02
CPC分类号： B82Y10/00 , H01J1/3042 , H01J3/022
摘要： An electron emission device comprises an electron emission electrode with a pointed end and a counter electrode positioned opposite to the pointed end, both formed by fine working of a conductive layer laminated on an insulating substrate.

4. 发明授权

US06515640B2 Electron emission device with gap between electron emission electrode and substrate 失效
标题翻译：具有电子发射电极和衬底之间间隙的电子发射器件
公开(公告)号：US06515640B2
公开(公告)日：2003-02-04
申请号：US09060354
申请日：1998-04-15
申请人： Takeo Tsukamoto , Mamoru Miyawaki , Tetsuya Kaneko , Akira Suzuki , Isamu Shimoda , Toshihiko Takeda , Masahiko Okunuki
发明人： Takeo Tsukamoto , Mamoru Miyawaki , Tetsuya Kaneko , Akira Suzuki , Isamu Shimoda , Toshihiko Takeda , Masahiko Okunuki
IPC分类号： G09G320
CPC分类号： B82Y10/00 , H01J1/3042 , H01J3/022
摘要： An electron emission device comprises an electron emission electrode with a pointed end and a counter electrode positioned opposite to the pointed end, both formed by fine working of a conductive layer laminated on an insulating substrate.
摘要翻译：电子发射装置包括具有尖端的电子发射电极和与尖端相对定位的对电极，两者都是通过层压在绝缘衬底上的导电层的精细加工形成的。

5. 发明授权

US5786658A Electron emission device with gap between electron emission electrode and substrate 失效
公开(公告)号：US5786658A
公开(公告)日：1998-07-28
申请号：US199967
申请日：1994-02-22
申请人： Takeo Tsukamoto , Mamoru Miyawaki , Tetsuya Kaneko , Akira Suzuki , Isamu Shimoda , Toshihiko Takeda , Masahiko Okunuki
发明人： Takeo Tsukamoto , Mamoru Miyawaki , Tetsuya Kaneko , Akira Suzuki , Isamu Shimoda , Toshihiko Takeda , Masahiko Okunuki
IPC分类号： H01J1/304 , H01J3/02 , H01J1/02
CPC分类号： B82Y10/00 , H01J1/3042 , H01J3/022
摘要： An electron emission device comprises an electron emission electrode with a pointed end and a counter electrode positioned opposite to the pointed end, both formed by fine working of a conductive layer laminated on an insulating substrate.

6. 发明授权

US4894611A System for measuring characteristics of electron emitting sources 失效
标题翻译：用于测量电子发射源特性的系统
公开(公告)号：US4894611A
公开(公告)日：1990-01-16
申请号：US186963
申请日：1988-04-27
申请人： Isamu Shimoda , Mamoru Miyawaki , Akira Suzuki , Tetsuya Kaneko , Takeo Tsukamoto , Toshihiko Takeda , Masahiko Okunuki
发明人： Isamu Shimoda , Mamoru Miyawaki , Akira Suzuki , Tetsuya Kaneko , Takeo Tsukamoto , Toshihiko Takeda , Masahiko Okunuki
IPC分类号： G01R31/26 , G01R31/24 , H01J9/42 , H01J37/06
CPC分类号： G01R31/24
摘要： A measuring system particularly suitably usable with an apparatus having a plurality of electron emitting sources, for measuring the characteristics of the electron emitting sources is disclosed. In the measuring system, the electron emitting sources are driven so that they emit electron flows of predetermined and different frequencies. The emitted electron flows are collected and, thereafter, only those signals having components corresponding to the predetermined frequencies are extracted. Based on the extracted signals, the characteristics of the electron emitting sources are measured at the same time and independently of each other.
摘要翻译：公开了一种特别适用于具有多个电子发射源的装置的测量系统，用于测量电子发射源的特性。在测量系统中，电子发射源被驱动，使得它们发射预定和不同频率的电子流。收集发射的电子流，然后仅提取具有与预定频率对应的分量的那些信号。基于所提取的信号，电子发射源的特性同时并且彼此独立地被测量。

7. 发明授权

US5201681A Method of emitting electrons 失效
标题翻译：发射电子的方法
公开(公告)号：US5201681A
公开(公告)日：1993-04-13
申请号：US848727
申请日：1992-03-09
申请人： Masahiko Okunuki , Akira Suzuki , Isamu Shimoda , Tetsuya Kaneko , Takeo Tsukamoto , Toshihiko Takeda , Takao Yonehara , Takeshi Ichikawa
发明人： Masahiko Okunuki , Akira Suzuki , Isamu Shimoda , Tetsuya Kaneko , Takeo Tsukamoto , Toshihiko Takeda , Takao Yonehara , Takeshi Ichikawa
IPC分类号： H01J1/304 , H01J3/02 , H01J9/02 , H01J31/12
CPC分类号： H01J9/025 , H01J1/3042 , H01J3/022 , H01J31/127 , H01J2201/30446
摘要： A method of emitting electrons by applying a voltage between a voltage application electrode and a target to be irradiated with the electrons emitted from an electron emission electrode with a conical portion in an electron emission device. The voltage application electrode is formed to oppose the electron emission electrode so as to sandwich an insulating layer therebetween and the target. A charge of the electron emission electrode which is lost by electron emission during an electron emission operation is supplied after the electron emission operation is completed.
摘要翻译：通过在电子发射装置中通过在电压施加电极和被电子发射电子发射的电子与电子发射电极发射的锥形部分之间施加电压来照射电子的方法。电压施加电极形成为与电子发射电极相对以在其间夹有绝缘层和靶。在电子发射操作完成之后，供给在电子发射操作期间被电子发射损失的电子发射电极的电荷。

8. 发明授权

US5176557A Electron emission element and method of manufacturing the same 失效
标题翻译：电子发射元件及其制造方法
公开(公告)号：US5176557A
公开(公告)日：1993-01-05
申请号：US746154
申请日：1991-08-14
申请人： Masahiko Okunuki , Akira Suzuki , Isamu Shimoda , Tetsuya Kaneko , Takeo Tsukamoto , Toshihiko Takeda , Takao Yonehara , Takeshi Ichikawa
发明人： Masahiko Okunuki , Akira Suzuki , Isamu Shimoda , Tetsuya Kaneko , Takeo Tsukamoto , Toshihiko Takeda , Takao Yonehara , Takeshi Ichikawa
IPC分类号： H01J1/304 , H01J3/02 , H01J9/02 , H01J31/12
CPC分类号： H01J3/022 , H01J1/3042 , H01J31/127 , H01J9/025 , H01J2201/30446
摘要： A multi type electron emission element comprises a plurality of electrodes formed on a deposition surface of an insulating material and each having a conical portion of a single crystal, an insulating layer formed on the deposition surface and having openings respectively centered on the conical portions, and a deriving electrodes, part of which is formed near at least the concial portions, the deriving electrode being formed on the insulating layer.
摘要翻译：多型电子发射元件包括形成在绝缘材料的沉积表面上并且各自具有单晶的锥形部分的多个电极，形成在沉积表面上并具有分别以锥形部分为中心的开口的绝缘层，以及导电电极，其一部分形成在至少相邻的部分附近，导电电极形成在绝缘层上。

9. 发明授权

US5361015A Electron emission element 失效
标题翻译：电子发射元件
公开(公告)号：US5361015A
公开(公告)日：1994-11-01
申请号：US011006
申请日：1993-01-29
申请人： Masahiko Okunuki , Akira Suzuki , Isamu Shimoda , Tetsuya Kaneko , Takeo Tsukamoto , Toshihiko Takeda , Takao Yonehara , Takeshi Ichikawa
发明人： Masahiko Okunuki , Akira Suzuki , Isamu Shimoda , Tetsuya Kaneko , Takeo Tsukamoto , Toshihiko Takeda , Takao Yonehara , Takeshi Ichikawa
IPC分类号： H01J1/304 , H01J3/02 , H01J9/02 , H01J31/12 , H01J7/06 , H01L21/02
CPC分类号： H01J9/025 , H01J1/3042 , H01J3/022 , H01J31/127 , H01J2201/30446
摘要： A multi type electron emission element comprises a plurality of electrodes formed on a deposition surface of an insulating material and each having a conical portion of a single crystal, an insulating layer formed on the deposition surface and having openings respectively centered on the conical portions, and a deriving electrodes, part of which is formed near at least the conical portions, the deriving electrode being formed on the insulating layer.
摘要翻译：多型电子发射元件包括形成在绝缘材料的沉积表面上并且各自具有单晶的锥形部分的多个电极，形成在沉积表面上并具有分别以锥形部分为中心的开口的绝缘层，以及导电电极，其一部分形成在至少锥形部分附近，导电电极形成在绝缘层上。

10. 发明授权

US5554859A Electron emission element with schottky junction 失效
标题翻译：具肖特基结的电子发射元件
公开(公告)号：US5554859A
公开(公告)日：1996-09-10
申请号：US557678
申请日：1995-11-13
申请人： Takeo Tsukamoto , Nobuo Watanabe , Toshihiko Takeda , Masahiko Okunuki
发明人： Takeo Tsukamoto , Nobuo Watanabe , Toshihiko Takeda , Masahiko Okunuki
IPC分类号： H01J1/308 , H01J9/02 , H01L29/06 , H01L29/12
CPC分类号： H01J1/308 , H01J9/022
摘要： This is an electron emission with a semiconductor substrate having a p-type semiconductor layer whose impurity concentration falls within a concentration range for causing an avalanche breakdown in a least a portion of a surface of the semiconductor layer. A Schottky electrode is connected to the semiconductor layer. There are a means for applying a reverse bias voltage between the Schottky electrode and the p-type semiconductor layer to cause the Schotty electrode to emit electrons, and a lead electrode, formed at a proper position, for externally guiding the emitted electrons. At least a portion of the Schottky electrode is formed of a thin film of a material selected from metals of Group 1A, Group 2A, Group 3A, and lanthanoids, metal silicides of Group 1A, Group 2A, Group Group 3A, and lanthanoids, and metal borides of Group 1A, Group 2A, Group 3A, and lanthanoids, and metal carbides of Group 4A. A film thickness of the Schotty electrode is set to be not more than 100 .ANG..
摘要翻译：这是具有半导体衬底的电子发射，其半导体衬底具有p型半导体层，其杂质浓度落在半导体层的表面的至少一部分中引起雪崩击穿的浓度范围内。肖特基电极连接到半导体层。存在在肖特基电极和p型半导体层之间施加反向偏置电压以使Schotty电极发射电子的装置和形成在适当位置的引线电极，用于外部引导发射的电子。肖特基电极的至少一部分由选自组1A，组2A，组3A和镧系元素的金属的薄膜，组1A，组2A，组3A和镧系元素的金属硅化物形成，以及第1A组，第2A组，第3A组和镧系金属硼化物，以及4A组金属碳化物。将Schotty电极的膜厚设定为不超过100。

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