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1. 发明授权

US06306756B1 Method for production of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US06306756B1
公开(公告)日：2001-10-23
申请号：US09580922
申请日：2000-05-26
申请人： Masahiko Hasunuma , Sachiyo Ito , Keizo Shimamura , Hisashi Kaneko , Nobuo Hayasaka , Junsei Tsutsumi , Akihiro Kajita , Junichi Wada , Haruo Okano
发明人： Masahiko Hasunuma , Sachiyo Ito , Keizo Shimamura , Hisashi Kaneko , Nobuo Hayasaka , Junsei Tsutsumi , Akihiro Kajita , Junichi Wada , Haruo Okano
IPC分类号： H01L214763
CPC分类号： H01L21/76882
摘要： A method for the production of a semiconductor device having an electrode line formed in a semiconducting substrate is disclosed which comprises preparing a semiconducting substrate having trenches and/or contact holes formed preparatorily in a region destined to form the electrode line, forming a conductive film formed mainly of at least one member selected from among Cu, Ag, and Au on the surface of the semiconducting substrate, heat-treating the superposed Cu film while supplying at least an oxidizing gas thereto thereby flowing the Cu film and causing never melting to fill the trenches and/or contact holes, and removing by polishing the part of the conductive film which falls outside the region of the electrode line and completing the electrode lines consequently. During the heat treatment, a reducing gas is supplied in addition to the oxidizing gas to induce a local oxidation-reduction reaction and fluidify and/or flow the conductive film and consequently accomplish the embodiment of the conductive film in the trenches. The formation of the interconnection is also accomplished by forming a conductive film on the surface of a semiconducting substrate having trenches formed therein, exerting thereon uniaxial stress from above the semiconducting substrate, heat treating the formed conductive film thereby flowing the conductive film, to fill the trenches, and polishing the surface of the semiconducting substrate.
摘要翻译：公开了一种制造半导体器件的方法，该半导体器件具有形成在半导体衬底中的电极线，其包括制备半导体衬底，该半导体衬底具有在预定形成电极线的区域中预先形成的沟槽和/或接触孔，形成导电膜主要是在半导体基板的表面上选自Cu，Ag和Au中的至少一个元件，在至少供给氧化气体的同时对叠加的Cu膜进行热处理，从而使Cu膜流动，从而不会熔化以填充沟槽和/或接触孔，并且通过抛光导电膜的掉落在电极线的区域外部并且完成电极线的部分去除。在热处理期间，除了氧化气体之外还提供还原气体以引起局部氧化还原反应，并使导电膜流通和/或流动，从而完成沟槽中导电膜的实施例。互连的形成还可以通过在其上形成有沟槽的半导体衬底的表面上形成导电膜，在半导体衬底上方施加单轴应力，热处理形成的导电膜从而使导电膜流动，从而填充沟槽，并抛光半导体衬底的表面。

2. 发明授权

US6090701A Method for production of semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US6090701A
公开(公告)日：2000-07-18
申请号：US521088
申请日：1995-06-20
申请人： Masahiko Hasunuma , Sachiyo Ito , Keizo Shimamura , Hisashi Kaneko , Nobuo Hayasaka , Junsei Tsutsumi , Akihiro Kajita , Junichi Wada , Haruo Okano
发明人： Masahiko Hasunuma , Sachiyo Ito , Keizo Shimamura , Hisashi Kaneko , Nobuo Hayasaka , Junsei Tsutsumi , Akihiro Kajita , Junichi Wada , Haruo Okano
IPC分类号： H01L21/768 , H01L21/4763
CPC分类号： H01L21/76882
摘要： A method for the production of a semiconductor device having an electrode line formed in a semiconducting substrate is disclosed which comprises preparing a semiconducting substrate having trenches and/or contact holes formed preparatorily in a region destined to form the electrode line, forming a conductive film formed mainly of at least one member selected from among Cu, Ag, and Au on the surface of the semiconducting substrate, heat-treating the superposed Cu film while supplying at least an oxidizing gas thereto thereby flowing the Cu film to fill the trenches and/or contact holes, and removing by polishing the part of the conductive film which falls outside the region of the electrode line and completing the electrode lines consequently. During the heat treatment, a reducing gas is supplied in addition to the oxidizing gas to induce a local oxidation-reduction reaction and fluidify and/or flow the conductive film and consequently accomplish the embodiment of the conductive film in the trenches.
摘要翻译：公开了一种制造半导体器件的方法，该半导体器件具有形成在半导体衬底中的电极线，其包括制备半导体衬底，该半导体衬底具有在预定形成电极线的区域中预先形成的沟槽和/或接触孔，形成导电膜主要是在半导体基板的表面上选自Cu，Ag和Au中的至少一个元件，在至少供给氧化气体的同时对叠加的Cu膜进行热处理，从而使Cu膜流过以填充沟槽和/或接触孔，并且通过抛光导电膜的掉在电极线的区域外部并且完成电极线的部分去除。在热处理期间，除了氧化气体之外还提供还原气体以引起局部氧化还原反应，并使导电膜流通和/或流动，从而完成沟槽中导电膜的实施例。

3. 发明申请

US20100002178A1 LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF PRODUCING THE SAME 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US20100002178A1
公开(公告)日：2010-01-07
申请号：US12494527
申请日：2009-06-30
申请人： Toshihiro NINOMIYA , Norihisa Kakinuma , Junsei Tsutsumi
发明人： Toshihiro NINOMIYA , Norihisa Kakinuma , Junsei Tsutsumi
IPC分类号： G02F1/1333 , G02F1/13
CPC分类号： G02F1/136227 , G02F1/136259 , G02F2001/134372
摘要： A liquid crystal display device having a plurality of pixels arranged in a matrix includes first and second substrates and a liquid crystal layer held therebetween. Switching elements are arranged in each of the pixels on the first substrate. A first organic insulating film covers signal lines, scan lines and switching elements. Common electrodes are formed in the first organic insulating film on the first substrate. Connection elements are electrically connected to the switching elements through first contact holes formed in the first organic insulating film. A second organic insulating film covers the first organic insulating film and the connection elements. Pixel electrodes having slits are formed on the second organic insulating film electrically connected to the respective connection elements through second contact holes formed in the second organic insulating film. The liquid crystal layer is switched by using a lateral electric field between the common and pixel electrodes formed on the first substrate.
摘要翻译：具有布置在矩阵中的多个像素的液晶显示装置包括第一和第二基板以及夹在其间的液晶层。开关元件布置在第一基板上的每个像素中。第一有机绝缘膜覆盖信号线，扫描线和开关元件。公共电极形成在第一基板上的第一有机绝缘膜中。连接元件通过形成在第一有机绝缘膜中的第一接触孔电连接到开关元件。第二有机绝缘膜覆盖第一有机绝缘膜和连接元件。具有狭缝的像素电极通过形成在第二有机绝缘膜中的第二接触孔而形成在与各个连接元件电连接的第二有机绝缘膜上。通过使用形成在第一基板上的公共电极和像素电极之间的横向电场来切换液晶层。

4. 发明授权

US08294863B2 Liquid crystal display device and method of producing the same 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US08294863B2
公开(公告)日：2012-10-23
申请号：US12494527
申请日：2009-06-30
申请人： Toshihiro Ninomiya , Norihisa Kakinuma , Junsei Tsutsumi
发明人： Toshihiro Ninomiya , Norihisa Kakinuma , Junsei Tsutsumi
IPC分类号： G02F1/1343
CPC分类号： G02F1/136227 , G02F1/136259 , G02F2001/134372
摘要： A liquid crystal display device having a plurality of pixels arranged in a matrix includes first and second substrates and a liquid crystal layer held therebetween. Switching elements are arranged in each of the pixels on the first substrate. A first organic insulating film covers signal lines, scan lines and switching elements. Common electrodes are formed in the first organic insulating film on the first substrate. Connection elements are electrically connected to the switching elements through first contact holes formed in the first organic insulating film. A second organic insulating film covers the first organic insulating film and the connection elements. Pixel electrodes having slits are formed on the second organic insulating film electrically connected to the respective connection elements through second contact holes formed in the second organic insulating film. The liquid crystal layer is switched by using a lateral electric field between the common and pixel electrodes formed on the first substrate.
摘要翻译：具有布置在矩阵中的多个像素的液晶显示装置包括第一和第二基板以及夹在其间的液晶层。开关元件布置在第一基板上的每个像素中。第一有机绝缘膜覆盖信号线，扫描线和开关元件。公共电极形成在第一基板上的第一有机绝缘膜中。连接元件通过形成在第一有机绝缘膜中的第一接触孔与开关元件电连接。第二有机绝缘膜覆盖第一有机绝缘膜和连接元件。具有狭缝的像素电极通过形成在第二有机绝缘膜中的第二接触孔而形成在与各个连接元件电连接的第二有机绝缘膜上。通过使用形成在第一基板上的公共电极和像素电极之间的横向电场来切换液晶层。

5. 发明授权

US06713748B1 Image detection device 失效
标题翻译：图像检测装置
公开(公告)号：US06713748B1
公开(公告)日：2004-03-30
申请号：US09337524
申请日：1999-06-22
申请人： Junsei Tsutsumi , Akira Kinno , Mitsushi Ikeda
发明人： Junsei Tsutsumi , Akira Kinno , Mitsushi Ikeda
IPC分类号： H01L2700
CPC分类号： H01L27/1214 , H01L27/14658 , H01L29/78621 , H01L29/78624 , H01L29/78645
摘要： An image detection device includes a pixel portion (OEF) having a photoelectric conversion film for converting incident light into a signal charge and a pixel capacitor for accumulating the signal charge, and a thin film transistor (TFT1) included in a signal detective circuit operation of which is controlled by a scanning line (G1) to read out the potential of a pixel electrode to a signal line (S1). The transistor (TFT1) having a source or drain connected to the pixel electrode is a TFT having an LDD structure on a high-potential side, a TFT having LDD structures on the high- and low-potential sides in which the LDD length is larger on the high-potential side, or a TFT having a double-gate structure. When the image detection device includes a protective diode (TFT2) for, if the potential of the pixel electrode reaches a predetermined value or more, flowing pixel charges to a bias line (B1) to prevent destruction of the pixel electrode, the transistor (TFT2) has an LDD structure on at least a high-potential side or a double-gate structure. This arrangement can increase the OFF resistance to suppress the leakage current, and can prevent a decrease in S/N ratio owing to leakage of signal charges before a read.
摘要翻译：一种图像检测装置包括具有用于将入射光转换为信号电荷的光电转换膜的像素部分（OEF）和用于累积信号电荷的像素电容器，以及包括在信号检测电路操作中的薄膜晶体管（TFT1）其由扫描线（G1）控制，以将像素电极的电位读出到信号线（S1）。具有与像素电极连接的源极或漏极的晶体管（TFT1）是在高电位侧具有LDD结构的TFT，在LDD长度较大的高电位侧和低电位侧具有LDD结构的TFT 在高电位侧，或具有双栅结构的TFT。当图像检测装置包括保护二极管（TFT2），如果像素电极的电位达到预定值以上，则将像素电荷流动到偏置线（B1）以防止像素电极的破坏，晶体管（TFT2 ）在至少高电位侧或双栅极结构上具有LDD结构。这种布置可以增加OFF电阻以抑制漏电流，并且可以防止在读取之前由于信号电荷泄漏引起的S / N比的降低。

6. 发明授权

US5682041A Electronic part incorporating artificial super lattice 失效
标题翻译：电子部件采用人造超晶格
公开(公告)号：US5682041A
公开(公告)日：1997-10-28
申请号：US651661
申请日：1996-05-21
申请人： Takashi Kawakubo , Hideo Hirayama , Kenya Sano , Michihiro Oose , Junsei Tsutsumi
发明人： Takashi Kawakubo , Hideo Hirayama , Kenya Sano , Michihiro Oose , Junsei Tsutsumi
IPC分类号： H01L29/15 , H01L29/161 , H01L29/221 , H01L29/24 , H01L29/26 , H01L29/66 , H01L29/737 , H01L29/76 , H01L29/88 , H01L45/00 , H01L29/06 , H01L31/0328 , H01L31/0336
CPC分类号： B82Y10/00 , H01L29/155 , H01L29/161 , H01L29/221 , H01L29/24 , H01L29/26 , H01L29/66977 , H01L29/7376 , H01L29/7606 , H01L29/882 , H01L45/00
摘要： An electronic part is disclosed which is furnished with an artificial super lattice obtained by alternately superposing a substance of good conductivity formed of a compound between one element selected from among the elements belonging to the transition elements of Groups 3A to 6A and the rare earth elements and an element selected from among boron, carbon, nitrogen, phosphorus, selenium, and tellurium or a compound between oxygen and a transition metal element selected from among the elements of Group 7A and Group 8 and an insulating substance formed of a compound between a simple metal element selected from among the elements belonging to Group 1A, Group 2A, and Groups 1B to 4B and an element selected from among carbon, nitrogen, oxygen, phosphorus, sulfur, selenium, tellurium, and halogen elements in thicknesses fit for obtaining a quantum size effect. The artificial super lattice possesses a barrier layer formed of an insulating substance and an electrode layer formed of a substance of good conductivity and disposed in contact with the barrier layers.
摘要翻译：公开了一种电子部件，其具有通过将选自属于3A〜6A族的过渡元素的元素和稀土元素之间的化合物形成的具有良好导电性的物质交替重叠的人造超晶格和选自硼，碳，氮，磷，硒和碲中的元素，或选自7A和8族的元素的氧和过渡金属元素之间的化合物，以及由简单金属选自属于组1A，组2A和组1B至4B的元素和选自碳，氮，氧，磷，硫，硒，碲和卤素元素的元素，其厚度适合于获得量子尺寸影响。人造超晶格具有由绝缘物质形成的阻挡层和由导电性良好的物质形成并与阻挡层接触的电极层。

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